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公开(公告)号：US07214580B2
公开(公告)日：2007-05-08
申请号：US11000173
申请日：2004-12-01
IPC分类号： H01L21/8238
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.
摘要翻译： 公开了一种半导体器件，包括半导体衬底，该半导体衬底包括由隔离沟槽分隔开的第一和第二元件形成区域，形成在第一和第二元件形成区域上的第一和第二下部栅极绝缘膜，形成在第一和第二元件形成区域上的第一和第二浮置栅极 和第二下栅极绝缘膜，隔离绝缘膜，至少形成在所述隔离沟槽中，并且在其上表面上形成有凹部，形成在所述第一和第二浮栅上的上栅极绝缘膜，以及控制栅极线， 与第一和第二浮动栅极相对的相对部分，其中上部栅极绝缘膜被插入，并且位于凹部内部的部分，第一浮动栅极包括与第二浮动栅极相对的侧表面，并且与包括的侧表面完全对准 在第一元件形成区域中并由隔离沟槽限定。
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公开(公告)号：US07462531B2
公开(公告)日：2008-12-09
申请号：US11680989
申请日：2007-03-01
IPC分类号： H01L21/8238
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.
摘要翻译： 公开了一种半导体器件，包括半导体衬底，该半导体衬底包括由隔离沟槽分隔开的第一和第二元件形成区域，形成在第一和第二元件形成区域上的第一和第二下部栅极绝缘膜，形成在第一和第二元件形成区域上的第一和第二浮置栅极 和第二下栅极绝缘膜，隔离绝缘膜，至少形成在所述隔离沟槽中，并且在其上表面上形成有凹部，形成在所述第一和第二浮栅上的上栅极绝缘膜，以及控制栅极线， 与第一和第二浮动栅极相对的相对部分，其中上部栅极绝缘膜被插入，并且位于凹部内部的部分，第一浮动栅极包括与第二浮动栅极相对的侧表面，并且与包括的侧表面完全对准 在第一元件形成区域中并由隔离沟槽限定。
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公开(公告)号：US20070155088A1
公开(公告)日：2007-07-05
申请号：US11680989
申请日：2007-03-01
IPC分类号： H01L21/8238
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.
摘要翻译： 公开了一种半导体器件，包括半导体衬底，该半导体衬底包括由隔离沟槽分隔开的第一和第二元件形成区域，形成在第一和第二元件形成区域上的第一和第二下部栅极绝缘膜，形成在第一和第二元件形成区域上的第一和第二浮置栅极 和第二下栅极绝缘膜，隔离绝缘膜，至少形成在所述隔离沟槽中，并且在其上表面上形成有凹部，形成在所述第一和第二浮栅上的上栅极绝缘膜，以及控制栅极线， 与第一和第二浮动栅极相对的相对部分，其中上部栅极绝缘膜被插入，并且位于凹部内部的部分，第一浮动栅极包括与第二浮动栅极相对的侧表面，并且与包括的侧表面完全对准 在第一元件形成区域中并由隔离沟槽限定。
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公开(公告)号：US06969884B2
公开(公告)日：2005-11-29
申请号：US10728928
申请日：2003-12-08
IPC分类号： H01L21/00 , H01L21/28 , H01L21/331 , H01L21/82 , H01L21/8222 , H01L21/8247 , H01L27/115 , H01L29/76 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.
摘要翻译： 公开了一种半导体器件，包括半导体衬底，该半导体衬底包括由隔离沟槽分隔开的第一和第二元件形成区域，形成在第一和第二元件形成区域上的第一和第二下部栅极绝缘膜，形成在第一和第二元件形成区域上的第一和第二浮置栅极 和第二下栅极绝缘膜，隔离绝缘膜，至少形成在所述隔离沟槽中，并且在其上表面上形成有凹部，形成在所述第一和第二浮栅上的上栅极绝缘膜，以及控制栅极线， 与第一和第二浮动栅极相对的相对部分，其中上部栅极绝缘膜被插入，并且位于凹部内部的部分，第一浮动栅极包括与第二浮动栅极相对的侧表面，并且与包括的侧表面完全对准 在第一元件形成区域中并由隔离沟槽限定。
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公开(公告)号：US07968399B2
公开(公告)日：2011-06-28
申请号：US12106088
申请日：2008-04-18
IPC分类号： H01L21/8249
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.
摘要翻译： 公开了一种半导体器件，包括半导体衬底，该半导体衬底包括由隔离沟槽分隔开的第一和第二元件形成区域，形成在第一和第二元件形成区域上的第一和第二下部栅极绝缘膜，形成在第一和第二元件形成区域上的第一和第二浮置栅极 和第二下栅极绝缘膜，隔离绝缘膜，至少形成在所述隔离沟槽中，并且在其上表面上形成有凹部，形成在所述第一和第二浮栅上的上栅极绝缘膜，以及控制栅极线， 与第一和第二浮动栅极相对的相对部分，其中上部栅极绝缘膜被插入，并且位于凹部内部的部分，第一浮动栅极包括与第二浮动栅极相对的侧表面，并且与包括的侧表面完全对准 在第一元件形成区域中并由隔离沟槽限定。
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公开(公告)号：US20050093080A1
公开(公告)日：2005-05-05
申请号：US11000173
申请日：2004-12-01
IPC分类号： H01L21/00 , H01L21/28 , H01L21/331 , H01L21/82 , H01L21/8222 , H01L21/8247 , H01L27/115 , H01L29/76 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.
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公开(公告)号：US20050051834A1
公开(公告)日：2005-03-10
申请号：US10728928
申请日：2003-12-08
IPC分类号： H01L21/00 , H01L21/28 , H01L21/331 , H01L21/82 , H01L21/8222 , H01L21/8247 , H01L27/115 , H01L29/76 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.
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公开(公告)号：US5356834A
公开(公告)日：1994-10-18
申请号：US35656
申请日：1993-03-23
申请人： Shigeki Sugimoto , Katsuya Okumura
发明人： Shigeki Sugimoto , Katsuya Okumura
IPC分类号： H01L21/60 , H01L21/768 , H01L21/8242 , H01L21/441
CPC分类号： H01L27/10852 , H01L21/76804 , H01L21/76831 , H01L21/76897 , Y10S148/133
摘要： A manufacturing method of semiconductor devices according to this invention, comprises the step of forming pattern portions containing internal wiring layers on a semiconductor substrate, the step of forming interlayer insulating films on said semiconductor substrate, the step of forming an opening portion in said interlayer insulating films so as to allow the pattern portions and the substrate to appear, and the step of forming a sidewall insulating film on the sidewall of the pattern portions appearing in the opening portion.
摘要翻译： 根据本发明的半导体器件的制造方法包括在半导体衬底上形成包含内部布线层的图案部分的步骤，在所述半导体衬底上形成层间绝缘膜的步骤，在所述层间绝缘体中形成开口部分的步骤 以使图形部分和基板出现，以及在出现在开口部分的图案部分的侧壁上形成侧壁绝缘膜的步骤。
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公开(公告)号：US20120060752A1
公开(公告)日：2012-03-15
申请号：US13049456
申请日：2011-03-16
CPC分类号： H01L21/67109 , H01L21/67742 , H01L21/68707
摘要： An apparatus for forming silicon oxide film is disclosed. The apparatus includes a spin coating unit, a carrying unit, and an oxidation unit. The spin coating unit forms a polymer film above a substrate by spin coating a solution including a polymer containing a silazane bond dissolved in an organic solvent. The carrying unit carries the substrate to the oxidation unit without contacting the polymer film. The oxidation unit, when receiving the substrate from the carrying unit, converts the polymer film into the silicon oxide film by either immersing the polymer film with a heated aqueous solution containing hydrogen peroxide, spraying the heated aqueous solution containing hydrogen peroxide over the polymer film, or exposing the polymer film to a reaction gas containing a hydrogen peroxide vapor. The apparatus, by itself, completes the polymer film formation and the polymer-to-silicon oxide film conversion within the apparatus itself.
摘要翻译： 公开了一种用于形成氧化硅膜的设备。 该设备包括旋涂单元，承载单元和氧化单元。 旋涂单元通过旋涂包含溶解在有机溶剂中的含有硅氮烷键的聚合物的溶液在基底上形成聚合物膜。 承载单元将基板运送到氧化单元而不与聚合物膜接触。 氧化单元在从承载单元接收基板时，通过将聚合物膜浸入含有过氧化氢的加热水溶液中，将聚合物膜转化为氧化硅膜，将加热的含有过氧化氢的水溶液喷洒在聚合物膜上， 或将聚合物膜暴露于含有过氧化氢蒸气的反应气体中。 该装置本身完成了聚合物膜的形成和在设备本身内的聚合物 - 氧化硅膜的转换。
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公开(公告)号：US20080310705A1
公开(公告)日：2008-12-18
申请号：US12056502
申请日：2008-03-27
CPC分类号： B62D57/032 , G05D1/0246 , G05D2201/0217 , G06K9/00201 , G06T7/70
摘要： A robot capable of performing appropriate movement control while reducing arithmetic processing for recognizing the shape of a floor. The robot sets a predetermined landing position of steps of the legs on a present assumed floor, which is a floor represented by floor shape information used for a current motion control of the robot, during movement of the robot. An image projection areas is set, and is projected on each image captured by cameras mounted on the robot for each predetermined landing position in the vicinity of each of the predetermined landing positions. Shape parameters representing the shape of an actual floor partial area are estimated, forming an actual floor whose image is captured in each partial image area, of based on the image of the partial image area generated by projecting the set image projection area on the images captured by the cameras for each partial image area.
摘要翻译： 能够进行适当的移动控制的机器人，同时减少用于识别地板的形状的算术处理。 机器人在机器人运动期间，将当前假想地板上的腿的步骤的预定着陆位置设置为当前假想地板，其是由用于机器人的当前运动控制的楼板形状信息表示的楼层。 设置图像投影区域，并且在每个预定着陆位置附近的每个预定着陆位置处投影到安装在机器人上的照相机捕获的每个图像上。 基于通过将设置的图像投影区域投影到捕获的图像而生成的部分图像区域的图像，估计表示实际楼层部分区域的形状的形状参数，形成其图像被捕获在每个部分图像区域中的实际楼层 通过每个部分图像区域的相机。
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