Semiconductor memory that enables high speed operation
    1.
    发明授权
    Semiconductor memory that enables high speed operation 失效
    可实现高速运行的半导体存储器

    公开(公告)号:US06392956B2

    公开(公告)日:2002-05-21

    申请号:US09863322

    申请日:2001-05-24

    IPC分类号: G11C800

    CPC分类号: G11C29/70 G11C8/12

    摘要: A semiconductor memory includes a block selection circuit, a redundancy main word decoder, a word reset circuit, and a word driver circuit. The block selection circuit outputs a block selection signal based on an address signal. The redundancy main word decoder generates a redundancy main word signal in response to the block selection signal. The word reset circuit outputs a word reset signal in response to the redundancy main word signal. The word driver circuit drives one of word lines in response to the word reset signal, a main word signal indicating selection of the word driver circuit, and a word decode signal indicating selection of the one of word lines.

    摘要翻译: 半导体存储器包括块选择电路,冗余主字解码器,字复位电路和字驱动器电路。 块选择电路基于地址信号输出块选择信号。 冗余主字解码器响应于块选择信号产生冗余主字信号。 字复位电路响应于冗余主字信号输出字复位信号。 字驱动器电路响应于字复位信号驱动字线之一,指示字驱动器电路的选择的主字信号和指示字线之一的选择的字解码信号。

    Multiport memory and information processing system
    3.
    发明授权
    Multiport memory and information processing system 有权
    多端口内存和信息处理系统

    公开(公告)号:US08271740B2

    公开(公告)日:2012-09-18

    申请号:US12411974

    申请日:2009-03-26

    IPC分类号: G06F12/00

    CPC分类号: G11C7/1075 G06F13/1663

    摘要: In an information processing system, a plurality of information processing devices CHIP0 and CHIP1 are connected to multiport memory MPMEM0 that has a plurality of ports, and memory areas in multiport memory MPMEM0 can be altered to memory areas occupied by particular ports and memory areas shared by a plurality of ports. At such times, immediately after the occurrence of a request from a port, the status of this request may be supplied from other ports.

    摘要翻译: 在信息处理系统中,多个信息处理装置CHIP0和CHIP1连接到具有多个端口的多端口存储器MPMEM0,并且多端口存储器MPMEM0中的存储区域可以被改变为由特定端口和存储区域所占用的存储区域 多个端口。 在这样的时刻,在从端口发出请求之后,可以从其他端口提供该请求的状态。

    Storage system and remote copy control method
    4.
    发明授权
    Storage system and remote copy control method 有权
    存储系统和远程复制控制方法

    公开(公告)号:US08078581B2

    公开(公告)日:2011-12-13

    申请号:US12029139

    申请日:2008-02-11

    IPC分类号: G06F7/00

    摘要: A plurality of second groups respectively including one or more second volumes are configured in correspondence with each of the first groups of a remote copy source in a remote copy destination, journals are acquired from the first storage apparatus periodically and in the order the journals were created for each of the configured second groups, and the acquired journals are reflected in the corresponding second volume in the corresponding second group. In addition, the latest time stamp of each of the second groups containing the journals retained in the second volume in an unreflected state is compared, the time difference of the latest and oldest time stamps is detected, and prescribed control processing is executed for acquiring the journals regarding the second group with the oldest time stamp in preference to the journals regarding other second groups when the time difference exceeds a preset threshold value.

    摘要翻译: 分别包括一个或多个第二卷的多个第二组被配置为与远程复制目的地中的远程复制源的第一组中的每一个相对应,周期性地从第一存储装置获取期刊,并且按照创建的期刊的顺序 对于每个配置的第二组,并且所获取的日志被反映在相应的第二组中的对应的第二卷中。 另外,比较包含保持在未反射状态的第二卷中的期刊的每个第二组的最新时间戳,检测最新和最旧的时间戳的时间差,并且执行规定的控制处理以获取 当时间差超过预设阈值时,关于具有最早时间戳的第二组的期刊优先于关于其他第二组的期刊。

    Mobile terminal device
    5.
    发明授权
    Mobile terminal device 有权
    移动终端设备

    公开(公告)号:US08072492B2

    公开(公告)日:2011-12-06

    申请号:US10594147

    申请日:2005-05-17

    IPC分类号: H04N7/18 H04M1/00

    摘要: To provide a mobile terminal device which can perform an operation reflecting the intention of a user when an event, such as the arrival of an incoming phone call or an email, occurs while a television broadcast is being displayed, and which can also improve the operability. A mobile terminal device is composed of: a TV reception unit which receives a television broadcast signal; an output control unit which controls outputs of video and audio of the television broadcast, auxiliary information of the television broadcast, the email, audio of the phone call, and video and audio of a video phone call, to a first display unit, a second display unit, and an audio reproduction unit; a recording control unit which records a television broadcast program onto a recording medium; a reproduction control unit which reproduces the television broadcast program recorded on the recording medium; a control unit which controls an operation performed when the email or the phone call is receives while the television broadcast is being displayed; and an unfold/fold detection unit which detects whether the mobile terminal device is folded or unfolded.

    摘要翻译: 为了提供一种移动终端设备,当在显示电视广播的同时,当诸如到来的电话呼叫或电子邮件等事件发生时,可以执行反映用户意图的操作,并且还可以提高可操作性 。 一种移动终端设备包括:接收电视广播信号的电视接收单元; 输出控制单元,其将电视广播的视频和音频输出,电视广播的辅助信息,电话,电话的音频以及视频电话的视频和音频的输出控制到第一显示单元,第二显示单元 显示单元和音频再现单元; 记录控制单元,其将电视广播节目记录到记录介质上; 再现控制单元,其再现记录在记录介质上的电视广播节目; 控制单元,其控制在显示电视广播时接收到电子邮件或电话呼叫时执行的操作; 以及展开/折叠检测单元,其检测移动终端设备是否被折叠或展开。

    Semiconductor memory device and data processing system including the semiconductor memory device
    6.
    发明申请
    Semiconductor memory device and data processing system including the semiconductor memory device 有权
    包括半导体存储器件的半导体存储器件和数据处理系统

    公开(公告)号:US20110261640A1

    公开(公告)日:2011-10-27

    申请号:US13067849

    申请日:2011-06-29

    申请人: Yoshinori Matsui

    发明人: Yoshinori Matsui

    IPC分类号: G11C8/16 G11C8/10

    CPC分类号: G11C7/1075

    摘要: A semiconductor device, includes a first memory cell array, a second memory cell array, a command decoder configured to produce a transfer command to transfer a data stored in a first area of the first memory cell array to a second area of the second memory cell array, when receiving a read command to the first memory cell array and sequentially a write command to the second cell memory array, a first address generator configured to produce a first internal address for designating the first area of the first memory cell array when receiving the transfer command from the command decoder; and a second address generator configured to produce a second internal address for designating the second area of the second memory cell array when receiving the transfer command from the command decoder.

    摘要翻译: 一种半导体器件,包括第一存储单元阵列,第二存储单元阵列,命令解码器,被配置为产生将存储在第一存储单元阵列的第一区域中的数据传送到第二存储单元的第二区域的传送命令 阵列,当接收到第一存储单元阵列的读取命令并且顺序地向第二单元存储器阵列写入命令时,第一地址生成器被配置为产生用于指定第一存储单元阵列的第一区域的第一内部地址, 命令解码器传输命令; 以及第二地址发生器,被配置为当从命令解码器接收到传送命令时,产生用于指定第二存储单元阵列的第二区域的第二内部地址。

    Semiconductor memory device and data processing system including the semiconductor memory device
    7.
    发明授权
    Semiconductor memory device and data processing system including the semiconductor memory device 有权
    包括半导体存储器件的半导体存储器件和数据处理系统

    公开(公告)号:US07978557B2

    公开(公告)日:2011-07-12

    申请号:US12318731

    申请日:2009-01-07

    申请人: Yoshinori Matsui

    发明人: Yoshinori Matsui

    IPC分类号: G11C7/00

    CPC分类号: G11C7/1075

    摘要: A semiconductor device that includes a plurality of memory cell arrays, a plurality of ports, a plurality of internal address generating circuits, and a controller. The plurality of internal address generating circuits may generate first and second internal addresses of first and second memory cell arrays of the plurality of memory cell arrays. The first internal address may designate a first area of the first memory cell array. The second internal address may designate a second area of the second memory cell array. The controller reads a series of data from the first area sequentially and writes the series of read data into the second area sequentially without transferring the series of read data to the plurality of ports.

    摘要翻译: 一种半导体器件,包括多个存储单元阵列,多个端口,多个内部地址生成电路和控制器。 多个内部地址产生电路可以生成多个存储单元阵列中的第一和第二存储单元阵列的第一和第二内部地址。 第一内部地址可以指定第一存储单元阵列的第一区域。 第二内部地址可以指定第二存储单元阵列的第二区域。 控制器顺序地从第一区域读取一系列数据,并将读取数据序列顺序地写入第二区域,而不将该系列读取数据传送到多个端口。

    Data reproduction device
    8.
    发明申请
    Data reproduction device 有权
    数据再现装置

    公开(公告)号:US20090228283A1

    公开(公告)日:2009-09-10

    申请号:US11578781

    申请日:2006-02-24

    IPC分类号: G10L21/00

    CPC分类号: G10L21/038

    摘要: A data reproduction device is provided that can achieve seamless reproduction of a stream even at the switching positions of the validity of the bandwidth extension function even in the case where the validity of the bandwidth extension function is switched in the stream. A data reproduction device (2000) includes: an input frequency obtainment unit (2001) which analyzes header information Hdr and obtains an input frequency FSin which is the frequency of basic data; an output frequency determination unit (2002) which performs predetermined processing based on the input frequency FSin and determines an output frequency FSout which is the sampling frequency of a decoded frame Fdata; and a decoding unit (2003) which, if the SBR function is valid in a frame to be decoded, decodes sample data at the input frequency FSin and extends the bandwidth of the sampling frequency up to the output frequency FSout through the SBR processing on the decoding result, while if the SBR function is not valid in the frame, upsamples the decoding result obtained at the input frequency FSin to the output frequency FSout.

    摘要翻译: 即使在带宽扩展功能的有效性在流中被切换的情况下,也可以实现即使在带宽扩展功能的有效性的切换位置,也能实现流的无缝再现。 数据再现装置(2000)包括:输入频率获取单元(2001),其分析标题信息Hdr并获得作为基本数据的频率的输入频率FSin; 输出频率确定单元(2002),其基于输入频率FSin执行预定处理,并确定作为解码帧Fdata的采样频率的输出频率FSout; 以及解码单元(2003),如果SBR功能在要解码的帧中有效,则以输入频率FSin解码采样数据,并且通过SBR处理将采样频率的带宽扩展到输出频率FSout 解码结果,而如果SBR功能在帧中无效,则将在输入频率FSin获得的解码结果上采样到输出频率FSout。

    MEMORY MODULE AND MEMORY DEVICE
    9.
    发明申请
    MEMORY MODULE AND MEMORY DEVICE 有权
    存储器模块和存储器件

    公开(公告)号:US20090219745A1

    公开(公告)日:2009-09-03

    申请号:US12435168

    申请日:2009-05-04

    IPC分类号: G11C5/02 G11C5/06

    摘要: In a memory module including a plurality of DRAM chips which transmit/receive a system data signal with a predetermined data width and at a transfer rate and which transmit/receive an internal data signal having a larger data width and a lower transfer rate as compared with the system data signal, the transfer rate of the system data signal is restricted. Current consumption in DRAMs constituting the memory module is large, hindering speed increases. For this memory module, a plurality of DRAM chips are stacked on an IO chip. Each DRAM chip is connected to the IO chip by a through electrode, and includes a constitution for mutually converting the system data signal and the internal data signal in each DRAM chip by the IO chip. Therefore, wiring between the DRAM chips can be shortened, and DLL having a large current consumption may be disposed only on the IO chip.

    摘要翻译: 在包括以预定数据宽度和传送速率发送/接收系统数据信号的多个DRAM芯片的存储器模块中,并且发送/接收具有较大数据宽度和较低传送速率的内部数据信号与 系统数据信号,系统数据信号的传输速率受到限制。 构成存储器模块的DRAM的电流消耗大,阻碍速度增加。 对于该存储器模块,多个DRAM芯片堆叠在IO芯片上。 每个DRAM芯片通过贯通电极连接到IO芯片,并且包括用于通过IO芯片相互转换每个DRAM芯片中的系统数据信号和内部数据信号的结构。 因此,可以缩短DRAM芯片之间的布线,并且可以仅在IO芯片上设置具有大电流消耗的DLL。

    SEMICONDUCTOR MEMORY DEVICE
    10.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权
    半导体存储器件

    公开(公告)号:US20090003026A1

    公开(公告)日:2009-01-01

    申请号:US12137802

    申请日:2008-06-12

    IPC分类号: G11C5/02 G11C8/00

    摘要: A semiconductor memory device includes a plurality of banks, each of which is constituted of a plurality of memory cell arrays that are aligned in series in the longitudinal direction, wherein each memory cell array includes a plurality of memory cells, and wherein memory cell arrays of banks are collectively aggregated into a plurality of blocks, each of which includes memory cell arrays aligned in the perpendicular direction, in connection with a plurality of DQ pads. DQ pads are arranged in proximity to blocks. Substantially the same distance is set between memory cells and DQ pads so as to reduce dispersions in access times with respect to all DQ pads, thus achieving high-speed access in the semiconductor memory device. The wiring region of IO lines is reduced in the center area of the chip.

    摘要翻译: 半导体存储器件包括多个存储体,每个存储体由在纵向方向上串联排列的多个存储单元阵列构成,其中每个存储单元阵列包括多个存储单元,并且其中存储单元阵列 银行被集体地聚集成多个块,每个块包括与多个DQ焊盘相关联的在垂直方向上排列的存储单元阵列。 DQ垫布置在块附近。 在存储单元和DQ垫之间基本上设置相同的距离,以便相对于所有DQ焊盘减少访问时间的分散,从而实现半导体存储器件中的高速访问。 在芯片的中心区域,IO线的布线区域减小。