Plasmon generator includes three metal layers for thermally-assisted magnetic recording
    7.
    发明授权
    Plasmon generator includes three metal layers for thermally-assisted magnetic recording 有权
    等离子体发生器包括用于热辅助磁记录的三个金属层

    公开(公告)号:US08711663B1

    公开(公告)日:2014-04-29

    申请号:US13777488

    申请日:2013-02-26

    IPC分类号: G11B11/00

    摘要: A plasmon generator has a front end face located in a medium facing surface of a magnetic head. The plasmon generator includes a first layer formed of a first metal material, a second layer formed of a second metal material, and a third layer formed of a third metal material. Each of the second and third layers has an end portion constituting part of the front end face. The first layer does not have any portion constituting part of the front end face. The first and second metal materials are higher in electrical conductivity than the third metal material. The third metal material is higher in Vickers hardness than the first and second metal materials. The first layer has a plasmon exciting part.

    摘要翻译: 等离子体发生器具有位于磁头的介质面向表面中的前端面。 等离子体发生器包括由第一金属材料形成的第一层,由第二金属材料形成的第二层和由第三金属材料形成的第三层。 第二层和第三层中的每一层具有构成前端面的一部分的端部。 第一层没有构成前端面的一部分的任何部分。 第一和第二金属材料的电导率高于第三金属材料。 第三种金属材料的维氏硬度高于第一和第二种金属材料。 第一层具有等离子体激元部分。

    Method of manufacturing plasmon generator
    9.
    发明授权
    Method of manufacturing plasmon generator 有权
    等离子体发生器的制造方法

    公开(公告)号:US08691102B1

    公开(公告)日:2014-04-08

    申请号:US13731754

    申请日:2012-12-31

    IPC分类号: C03C15/00

    摘要: A method of manufacturing a plasmon generator includes the steps of: forming an etching mask on a dielectric layer; forming an accommodation part by etching the dielectric layer using the etching mask; and forming the plasmon generator to be accommodated in the accommodation part. The step of forming the etching mask includes the steps of: forming a patterned layer on an etching mask material layer, the patterned layer having a first opening that has a sidewall; forming a structure by forming an adhesion film on the sidewall, the structure having a second opening smaller than the first opening; and etching a portion of the etching mask material layer exposed from the second opening.

    摘要翻译: 一种制造等离子体发生器的方法包括以下步骤:在电介质层上形成蚀刻掩模; 通过使用蚀刻掩模蚀刻电介质层来形成容纳部分; 以及形成要容纳在容纳部分中的等离子体发生器。 形成蚀刻掩模的步骤包括以下步骤:在蚀刻掩模材料层上形成图案化层,所述图案化层具有具有侧壁的第一开口; 通过在侧壁上形成粘合膜来形成结构,该结构具有比第一开口小的第二开口; 并蚀刻从第二开口露出的蚀刻掩模材料层的一部分。