公开(公告)号：US06570191B2

公开(公告)日：2003-05-27

申请号：US10026794

申请日：2001-12-27

申请人： Yoshiyuki Mizuno ,  Masumi Hirotani ,  Terence Edward Sale ,  Chuan-Cheng Tu

发明人： Yoshiyuki Mizuno ,  Masumi Hirotani ,  Terence Edward Sale ,  Chuan-Cheng Tu

IPC分类号： H01L3300

CPC分类号： H01L33/105 ,  H01L33/06 ,  H01L33/145 ,  H01L33/30 ,  H01S5/18313 ,  H01S5/18358 ,  H01S5/18383 ,  H01S5/3211

摘要： A surface-light-emitting device including a semiconductor substrate, and a laminar semiconductor structure consisting of a plurality of semiconductor layers formed by epitaxial growth on the semiconductor substrate, the laminar semiconductor structure including a light-generating layer, and two multi-film reflecting layers between which the light-generating layer is interposed and which constitute a light resonator for reflecting a light generated by the light-generating layer, the structure having a light-emitting surface at one of opposite ends thereof remote from the substrate, so that the light generated by the light-generating layer is emitted from the light-emitting surface, wherein the two multi-film reflecting layers consist of a first multi-film reflecting layer formed principally of AlGaInP on the substrate, and a second multi-film reflecting layer formed principally of AlGaAs on one of opposite sides of the light-generating layer which is remote from the substrate.

摘要翻译： 一种表面发光器件，包括半导体衬底和由在半导体衬底上外延生长形成的多个半导体层的层状半导体结构，包括发光层的层状半导体结构和两个多膜反射 其间插入有发光层，并且构成用于反射由发光层产生的光的光谐振器，该结构在其远离基板的相对端的一端具有发光表面，使得 由发光层产生的光从发光面发射，其中两个多层反射层由在基板上的主要由AlGaInP形成的第一多层膜反射层和第二多层反射层 主要由AlGaAs形成在远离基板的发光层的相对两侧。

公开(公告)号：US5260589A

公开(公告)日：1993-11-09

申请号：US786006

申请日：1991-10-31

申请人： Norikatsu Yamauchi ,  Takashi Saka ,  Masumi Hirotani ,  Toshihiro Kato ,  Hiromoto Susawa

发明人： Norikatsu Yamauchi ,  Takashi Saka ,  Masumi Hirotani ,  Toshihiro Kato ,  Hiromoto Susawa

IPC分类号： H01L33/10 ,  H01L33/00

CPC分类号： H01L33/10

摘要： A semiconductor device having a reflecting layer consisting of unit semiconductors each consisting of two or more semiconductor films of different compositions. The thickness of the unit semiconductors varies continuously or in steps in the direction of thickness of the reflecting layer, preferably decreases in the direction toward the light incidence surface of the layer. For example, the reflecting layer has a varying-thickness portion whose unit semiconductors have a continuously varying thickness, and may include an iso-thickness portion whose semiconductors have the same thickness. The composition at the interface of the adjacent films preferably changes to mitigate a lattice mismatch which causes crystal defects of the layer.