公开(公告)号：US09976215B2

公开(公告)日：2018-05-22

申请号：US13460884

申请日：2012-05-01

申请人： You-Hua Chou ,  Chih-Tsung Lee ,  Shu-Fen Wu ,  Chin-Hsiang Lin

发明人： You-Hua Chou ,  Chih-Tsung Lee ,  Shu-Fen Wu ,  Chin-Hsiang Lin

IPC分类号： C23C16/455 ,  C23C16/509

CPC分类号： C23C16/45565 ,  C23C16/5096

摘要： An apparatus and method are disclosed for forming thin films on a semiconductor substrate. The apparatus in one embodiment includes a process chamber configured for supporting the substrate, a gas excitation power source, and first and second gas distribution showerheads fluidly coupled to a reactive process gas supply containing film precursors. The showerheads dispense the gas into two different zones above the substrate, which is excited to generate an inner plasma field and an outer plasma field over the wafer. The apparatus deposits a material on the substrate in a manner that promotes the formation of a film having a substantially uniform thickness across the substrate. In one embodiment, the substrate is a wafer. Various embodiments include first and second independently controllable power sources connected to the first and second showerheads to vary the power level and plasma intensity in each zone.

公开(公告)号：US09287154B2

公开(公告)日：2016-03-15

申请号：US13486025

申请日：2012-06-01

申请人： Ming Huei Lien ,  Chia-Ho Chen ,  Shu-Fen Wu ,  Chih-Tsung Lee ,  You-Hua Chou

发明人： Ming Huei Lien ,  Chia-Ho Chen ,  Shu-Fen Wu ,  Chih-Tsung Lee ,  You-Hua Chou

IPC分类号： H01L21/677 ,  H01L21/68 ,  H01L21/67 ,  H01L21/3105

CPC分类号： H01L21/6776 ,  H01L21/3105 ,  H01L21/67115

摘要： Embodiments of an ultraviolet (UV) curing system for treating a semiconductor substrate such as a wafer are disclosed. The curing system generally includes a processing chamber, a wafer support for holding a wafer in the chamber, a UV radiation source disposed above the chamber, and a UV transparent window interspersed between the radiation source and wafer support. In one embodiment, the wafer support is provided by a belt conveyor operable to transport wafers through the chamber during UV curing. In another embodiment, the UV radiation source is a movable lamp unit that travels across the top of the chamber for irradiating the wafer. In another embodiment, the UV transparent window includes a UV radiation modifier that reduces the intensity of UV radiation on portions of the wafer positioned below the modifier. Various embodiments enhance wafer curing uniformity by normalizing UV intensity levels on the wafer.

摘要翻译： 公开了用于处理诸如晶片的半导体衬底的紫外（UV）固化系统的实施例。 固化系统通常包括处理室，用于在室中保持晶片的晶片支撑件，设置在室上方的UV辐射源，以及散布在辐射源和晶片支撑件之间的UV透明窗口。 在一个实施例中，晶片支撑件由带式输送机提供，其可操作以在UV固化期间将晶片传送通过室。 在另一个实施例中，UV辐射源是可移动的灯单元，其移动穿过室的顶部以照射晶片。 在另一个实施方案中，UV透明窗口包括UV辐射调节剂，其降低位于调节剂下方的晶片部分上的UV辐射强度。 各种实施例通过使晶片上的UV强度水平归一化来增强晶片固化均匀性。

公开(公告)号：US20130201596A1

公开(公告)日：2013-08-08

申请号：US13364463

申请日：2012-02-02

申请人： Chia-Ho Chen ,  Ming Huei Lien ,  Shu-Fen Wu ,  Chih-Tsung Lee ,  You-Hua Chou

发明人： Chia-Ho Chen ,  Ming Huei Lien ,  Shu-Fen Wu ,  Chih-Tsung Lee ,  You-Hua Chou

IPC分类号： H01L21/683

CPC分类号： H01L21/6833 ,  H01L21/6831 ,  H02N13/00

摘要： An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.

摘要翻译： 用于夹紧翘曲工件的静电卡盘具有包括电介质层的夹紧表面。 电介质层具有由不同介电材料形成的场和一个或多个区域。 一个或多个电极耦合到电源，并且控制器经由电源控制提供给一个或多个电极的钳位电压。 诱发与静电卡盘的电介质层的场和一个或多个区域中的每一个相关联的静电吸引力，其中静电吸引力基于场和一个或多个区域中的每一个的介电材料而变化。 在一个或多个区域中的静电吸引力比现场更大，其中将工件的翘曲区域吸引到夹紧表面，并将经弯曲的工件夹紧到穿过弯曲的工件的表面的夹紧表面。

公开(公告)号：US08902561B2

公开(公告)日：2014-12-02

申请号：US13364463

申请日：2012-02-02

申请人： Chia-Ho Chen ,  Ming Huei Lien ,  Shu-Fen Wu ,  Chih-Tsung Lee ,  You-Hua Chou

发明人： Chia-Ho Chen ,  Ming Huei Lien ,  Shu-Fen Wu ,  Chih-Tsung Lee ,  You-Hua Chou

IPC分类号： H01L21/683

CPC分类号： H01L21/6833 ,  H01L21/6831 ,  H02N13/00

摘要： An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.

摘要翻译： 用于夹紧翘曲工件的静电卡盘具有包括电介质层的夹紧表面。 电介质层具有由不同介电材料形成的场和一个或多个区域。 一个或多个电极耦合到电源，并且控制器经由电源控制提供给一个或多个电极的钳位电压。 诱发与静电卡盘的电介质层的场和一个或多个区域中的每一个相关联的静电吸引力，其中静电吸引力基于场和一个或多个区域中的每一个的介电材料而变化。 在一个或多个区域中的静电吸引力比现场更大，其中将工件的翘曲区域吸引到夹紧表面，并将经弯曲的工件夹紧到穿过弯曲的工件的表面的夹紧表面。