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1.发明申请Magnetic random access memory with tape read line, fabricating method and circuit thereof 审中-公开具有磁带读取线的磁性随机存取存储器，其制造方法和电路公开(公告)号：US20060039189A1
公开(公告)日：2006-02-23
申请号：US11033169
申请日：2005-01-12
CPC分类号： G11C11/16
摘要： A magnetic random access memory with tape read line, fabricating method and circuit thereof is provided. The memory is composed of a top write line, a bottom write line which is vertical to the top write line, a MTJ formed on the bottom write line, a spacer formed around the MTJ, and a tape read line formed on the MTJ. The fabricating steps involves forming a bottom write line, forming a MTJ on the bottom write, and forming a tape read line on the MTJ sequentially. In the circuit, the tape read line is either parallel to or vertical to the top write line.
摘要翻译： 提供具有磁带读取线的磁性随机存取存储器，其制造方法和电路。 存储器由顶部写入线，垂直于顶部写入线的底部写入线，形成在底部写入线上的MTJ，形成在MTJ周围的间隔件和形成在MTJ上的磁带读取线组成。 制造步骤包括形成底部写入线，在底部写入上形成MTJ，并且依次在MTJ上形成带读取线。 在电路中，磁带读取线与顶部写入线并行或垂直。
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公开(公告)号：US20070171703A1
公开(公告)日：2007-07-26
申请号：US11558297
申请日：2006-11-09
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A current source for magnetic random access memory (MRAM) is provided, including a band-gap reference circuit, a first stage buffer, and a plurality of second stage buffers. The band-gap reference circuit provides an output reference voltage which is locked by the first stage buffer. The plurality of second stage buffers generate a stable voltage in response to the locked voltage, so as to provide a current for the conducting wire after being converted, such that magnetic memory cell changes its memory state in response to the current. The current source may reduce the discharge time under the operation of biphase current, so as to raise the operating speed. Further, the circuit area of the current source for the MRAM is also reduced. The operation of multiple write wires may be provided simultaneously to achieve parallel write.
摘要翻译： 提供了一种用于磁随机存取存储器（MRAM）的电流源，包括带隙参考电路，第一级缓冲器和多个第二级缓冲器。 带隙基准电路提供由第一级缓冲器锁定的输出参考电压。 多个第二级缓冲器响应于锁定电压产生稳定的电压，以便在转换之后为导线提供电流，使得磁存储单元响应于电流来改变其存储状态。 电流源可以减少双相电流运行时的放电时间，从而提高运行速度。 此外，MRAM的电流源的电路面积也减小。 可以同时提供多条写入线的操作以实现并行写入。
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3.发明申请Method for switching magnetic moment in magnetoresistive random access memory with low current 有权低电流磁阻随机存取存储器中磁矩切换的方法公开(公告)号：US20090003043A1
公开(公告)日：2009-01-01
申请号：US12219247
申请日：2008-07-18
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译： 用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场， 第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。 用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。 一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。
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4.发明授权Method for switching magnetic moment in magnetoresistive random access memory with low current 有权低电流磁阻随机存取存储器中磁矩切换的方法公开(公告)号：US07420837B2
公开(公告)日：2008-09-02
申请号：US11338653
申请日：2006-01-25
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译： 用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场， 第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。 用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。 一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。
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5.发明授权Method for switching magnetic moment in magnetoresistive random access memory with low current 有权低电流磁阻随机存取存储器中磁矩切换的方法公开(公告)号：US07800937B2
公开(公告)日：2010-09-21
申请号：US12219247
申请日：2008-07-18
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译： 用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场， 第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。 用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。 一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。
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6.发明申请Magnetic random access memory with reference magnetic resistance and reading method thereof 审中-公开具有参考磁阻的磁性随机存取存储器及其读取方法公开(公告)号：US20060113619A1
公开(公告)日：2006-06-01
申请号：US11224082
申请日：2005-09-13
申请人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
发明人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , G11C11/15 , H01L27/228
摘要： A magnetic random access memory having reference magnetic resistance is provided. The memory includes at least one magnetic memory cell having an antiferromagnet layer, a pinned layer formed thereon, a tunnel barrier layer formed thereon, and a free layer formed thereon. The pinned layer and free layer are arranged orthogonally to form a reference magnetic resistance state. Through the provided MRAM structure, the access accuracy is greatly increased and the access speed is accelerated.
摘要翻译： 提供具有参考磁阻的磁性随机存取存储器。 存储器包括至少一个具有反铁磁体层，形成在其上的被钉扎层，形成在其上的隧道势垒层和形成在其上的自由层的磁存储单元。 钉扎层和自由层正交布置以形成参考磁阻状态。 通过提供的MRAM结构，访问精度大大提高，访问速度加快。
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7.发明申请Magnetic random access memory with reference magnetic resistance and reading method thereof 审中-公开具有参考磁阻的磁性随机存取存储器及其读取方法公开(公告)号：US20070200188A1
公开(公告)日：2007-08-30
申请号：US11797160
申请日：2007-05-01
申请人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
发明人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , G11C11/15 , H01L27/228
摘要： A magnetic random access memory having reference magnetic resistance is provided. The memory includes at least one magnetic memory cell having an antiferromagnet layer, a pinned layer formed thereon, a tunnel barrier layer formed thereon, and a free layer formed thereon. The pinned layer and free layer are arranged orthogonally to form a reference magnetic resistance state. Through the provided MRAM structure, the access accuracy is greatly increased and the access speed is accelerated.
摘要翻译： 提供具有参考磁阻的磁性随机存取存储器。 存储器包括至少一个具有反铁磁体层，形成在其上的被钉扎层，形成在其上的隧道势垒层和形成在其上的自由层的磁存储单元。 钉扎层和自由层正交布置以形成参考磁阻状态。 通过提供的MRAM结构，访问精度大大提高，访问速度加快。
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8.发明申请Method for switching magnetic moment in magnetoresistive random access memory with low current 有权低电流磁阻随机存取存储器中磁矩切换的方法公开(公告)号：US20070030727A1
公开(公告)日：2007-02-08
申请号：US11338653
申请日：2006-01-25
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/14
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译： 用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场， 第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。 用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。 一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。
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9.发明申请公开(公告)号：US20080003701A1
公开(公告)日：2008-01-03
申请号：US11781163
申请日：2007-07-20
申请人： Young-Shying Chen , Wei-Chuan Chen , Ming-Jer Kao
发明人： Young-Shying Chen , Wei-Chuan Chen , Ming-Jer Kao
IPC分类号： H01L21/4763 , H01L21/00
CPC分类号： H01L43/12
摘要： A non-via method of connecting a magnetoelectric element with a conductive line is provided. A magnetoelectric element is formed on a substrate. Spacers are formed on side walls of the magnetoelectric element. A first dielectric layer is deposited over the substrate and the magnetoelectric element. The first dielectric layer is planarized to a level above the magnetoelectric element. A second dielectric layer is deposited over the first dielectric layer. The first and second dielectric layers are etched to form a trench, exposing an upper surface of the magnetoelectric element. A conductive material layer is filled into the trench to form a conductive line on the magnetoelectric element.
摘要翻译： 提供了一种连接磁电元件与导线的非通孔方法。 在基板上形成有一个磁电元件。 间隔物形成在磁电元件的侧壁上。 第一电介质层沉积在衬底和磁电元件上。 第一介电层被平坦化到高于磁电元件的水平。 在第一介电层上沉积第二介电层。 蚀刻第一和第二电介质层以形成沟槽，暴露磁电元件的上表面。 将导电材料层填充到沟槽中以在磁电元件上形成导电线。
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10.发明申请公开(公告)号：US20060148234A1
公开(公告)日：2006-07-06
申请号：US11154632
申请日：2005-06-17
IPC分类号： H01L21/00 , H01L21/4763
CPC分类号： H01L43/12
摘要： A non-via method of connecting a magnetoelectric element with a conductive line. A magnetoelectric element is formed on a substrate, and spacers are formed on side walls of the magnetoelectric element. A dielectric layer is deposited over the substrate and magnetoelectric element and planarized to a level above the magnetoelectric element. The dielectric layer is etched to expose the upper surface of the magnetoelectric element, and a conductive line is formed on the magnetoelectric element.
摘要翻译： 一种连接磁电元件与导线的非通孔方法。 在基板上形成有磁电元件，在磁电元件的侧壁上形成间隔物。 介电层沉积在衬底和磁电元件上，并平坦化到高于磁电元件的电平。 蚀刻电介质层以暴露磁电元件的上表面，并且在该磁电元件上形成导线。
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