公开(公告)号：US08889561B2

公开(公告)日：2014-11-18

申请号：US13709541

申请日：2012-12-10

申请人： Youngtag Woo ,  Jongwook Kye ,  Dinesh Somasekhar

发明人： Youngtag Woo ,  Jongwook Kye ,  Dinesh Somasekhar

IPC分类号： H01L21/308 ,  H01L21/8238 ,  H01L27/11 ,  H01L27/088

CPC分类号： H01L27/1108 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/11

摘要： Methodology enabling a generation of fins having a variable fin pitch less than 40 nm, and the resulting device are disclosed. Embodiments include: forming a hardmask on a substrate; providing first and second mandrels on the hardmask; providing a first spacer on each side of each of the first and second mandrels; removing the first and second mandrels; providing, after removal of the first and second mandrels, a second spacer on each side of each of the first spacers; and removing the first spacers.

摘要翻译： 公开了能够产生具有可变翅片间距小于40nm的翅片的方法，并且所得到的装置被公开。 实施例包括：在基板上形成硬掩模; 在硬掩模上提供第一和第二心轴; 在每个第一和第二心轴的每一侧上提供第一间隔件; 去除第一和第二心轴; 在移除所述第一和第二心轴之后，在每个所述第一间隔件的每一侧上提供第二间隔件; 并移除第一间隔物。

公开(公告)号：US09268897B2

公开(公告)日：2016-02-23

申请号：US13465909

申请日：2012-05-07

申请人： Lei Yuan ,  Hidekazu Yoshida ,  Youngtag Woo ,  Jongwook Kye

发明人： Lei Yuan ,  Hidekazu Yoshida ,  Youngtag Woo ,  Jongwook Kye

IPC分类号： G06F17/50

CPC分类号： G06F17/5077 ,  G06F2217/12 ,  Y02P90/265

摘要： A process for manufacturing integrated circuit devices includes providing a set of original color rules defining an original color rule space and defining a design space. The improvement involves applying a perturbed color rule space to the router processing engine to expose double pattern routing odd cycle decomposition errors, and reconfiguring the router processing engine in accordance with the exposed decomposition errors.

摘要翻译： 一种用于制造集成电路器件的方法包括提供定义原始颜色规则空间并定义设计空间的一组原始颜色规则。 改进之处在于将扰动的颜色规则空间应用于路由器处理引擎以暴露双模式路由奇数周期分解误差，并根据暴露的分解误差重新配置路由器处理引擎。

公开(公告)号：US20130298089A1

公开(公告)日：2013-11-07

申请号：US13465909

申请日：2012-05-07

申请人： Lei Yuan ,  Hidekazu Yoshida ,  Youngtag Woo ,  Jongwook Kye

发明人： Lei Yuan ,  Hidekazu Yoshida ,  Youngtag Woo ,  Jongwook Kye

IPC分类号： G06F17/50

CPC分类号： G06F17/5077 ,  G06F2217/12 ,  Y02P90/265

摘要： A method for increasing the robustness of a double patterning router used in the manufacture of integrated circuit devices that includes providing a set of original color rules defining an original color rule space, providing a set of integrated circuit designs defining a design space, providing a router processing engine, perturbing the original color rules to define a perturbed color rule space, applying the perturbed color rule space and the design space to the router processing engine to expose double pattern routing odd cycle decomposition errors, and feeding back the exposed decomposition errors to enhance router processing engine development by reconfiguring the router processing engine in accordance with the exposed decomposition errors.

摘要翻译： 一种用于增加用于制造集成电路器件的双重图案化路由器的鲁棒性的方法，其包括提供定义原始颜色规则空间的一组原始颜色规则，提供定义设计空间的一组集成电路设计，提供路由器 处理引擎，扰乱原始颜色规则以定义扰动的颜色规则空间，将扰动的颜色规则空间和设计空间应用于路由器处理引擎以暴露双模式路由奇数周期分解错误，并反馈暴露的分解错误以增强 通过根据暴露的分解错误重新配置路由器处理引擎来开发路由器处理引擎。

公开(公告)号：US07388262B2

公开(公告)日：2008-06-17

申请号：US10991043

申请日：2004-11-16

申请人： Jae-Gyung Ahn ,  Youngtag Woo

发明人： Jae-Gyung Ahn ,  Youngtag Woo

IPC分类号： H01L29/76

CPC分类号： H01L21/02247 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/823412 ,  H01L21/823462 ,  H01L21/823807 ,  H01L21/823857 ,  H01L29/518

摘要： A rapid thermal nitridation (RTN) process produces a nitrogen concentration gradient in an oxynitride layer to compensate for transistor threshold voltage effects from a thickness gradient in the oxynitride layer. The nitrogen concentration gradient is selected to allow greater dopant penetration through thicker gate dielectrics in PMOS transistors formed using the oxynitride layer. Any increases in threshold voltage due to thicker gate dielectrics are counteracted by corresponding decreases in threshold voltage due to dopant penetration, allowing consistent threshold voltage values to be maintained for all PMOS transistors on a single wafer. The nitrogen concentration gradient can be introduced by regulating the flow of nitrous oxide during RTN processing to cause an accumulation of atomic oxygen to develop within the process chamber. The atomic oxygen forms a concentration distribution that increases in the direction of nitrous oxide flow, and therefore removes incorporated nitrogen from the oxynitride layer in corresponding proportions.

摘要翻译： 快速热氮化（RTN）工艺在氮氧化物层中产生氮浓度梯度，以补偿来自氧氮化物层中的厚度梯度的晶体管阈值电压效应。 选择氮浓度梯度以允许更大的掺杂剂穿透通过使用氮氧化物层形成的PMOS晶体管中较厚的栅极电介质。 由于较厚的栅极电介质导致的阈值电压的任何增加都由于掺杂剂渗透引起的阈值电压的相应降低而抵消，从而允许为单个晶片上的所有PMOS晶体管维持一致的阈值电压值。 可以通过在RTN处理期间调节一氧化二氮的流量来引入氮浓度梯度，从而在处理室内引起原子氧的积累。 原子氧形成在一氧化二氮流动方向上增加的浓度分布，因此以相应比例从氮氧化物层除去掺入的氮。