摘要:
The embodiments of methods and structures disclosed herein provide mechanisms of performing doping an inter-level dielectric film, ILD0, surrounding the gate structures with a dopant to reduce its etch rates during the processes of removing dummy gate electrode layer and/or gate dielectric layer for replacement gate technologies. The ILD0 film may be doped with a plasma doping process (PLAD) or an ion beam process. Post doping anneal is optional.
摘要:
A method of detecting oxygen leakage. Firstly, a detection wafer with a first color positioned on the substrate is provided. Then, the detection wafer is loaded into a reaction tube from a loading chamber, and subsequently, the detection wafer is unloaded from the reaction tube. Finally, the detection wafer is observed to obtain a second color, wherein if oxygen leaks into the loading chamber, the second color is different from the first color.
摘要:
A method of detecting oxygen leakage. Firstly, a detection wafer having a substrate and a metallic film with a first color positioned on the substrate is provided. Then, the detection wafer is loaded into a reaction tube from a loading chamber, and subsequently, the detection wafer is unloaded from the reaction tube. Finally, a surface of the detection wafer is observed to obtain a second color of the metallic film, wherein if oxygen leaks into the loading chamber, the second color is different from the first color.