公开(公告)号：US5342502A

公开(公告)日：1994-08-30

申请号：US140819

申请日：1993-10-21

申请人： Yu-Min Peng ,  Jih-Wen Wang ,  Chun-Ying Liue ,  Shinn-Horng Yeh

发明人： Yu-Min Peng ,  Jih-Wen Wang ,  Chun-Ying Liue ,  Shinn-Horng Yeh

IPC分类号： C01B31/36 ,  C25D15/00 ,  B05D1/18 ,  C04B35/56

CPC分类号： C25D15/00 ,  C01B31/36 ,  C01P2004/03 ,  C01P2004/80 ,  C01P2006/40 ,  C01P2006/90

摘要： A method for preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals includes the steps of washing the silicon carbide particles with an organic solvent; washing the silicon carbide particles with an inorganic acid; grinding the silicon carbide particles; and heating the silicon carbide particles in a nickel-containing solution at a boiling temperature for a predetermined period of time.

摘要翻译： 分散在用于复合电镀金属的电解槽中的碳化硅颗粒的方法包括以下步骤：用有机溶剂洗涤碳化硅颗粒; 用无机酸洗涤碳化硅颗粒; 研磨碳化硅颗粒; 并在沸腾温度下在含镍溶液中加热碳化硅颗粒一段预定的时间。

公开(公告)号：US06621139B2

公开(公告)日：2003-09-16

申请号：US10037084

申请日：2001-12-31

申请人： Kaihsiang Yen ,  Jing-Hung Chiou ,  Ran-Jin Lin ,  Jih-Wen Wang ,  Nai-Hao Kuo

发明人： Kaihsiang Yen ,  Jing-Hung Chiou ,  Ran-Jin Lin ,  Jih-Wen Wang ,  Nai-Hao Kuo

IPC分类号： A01F2706

CPC分类号： H01L27/08

摘要： A method for fabricating a tunable, 3-dimensional solenoid utilizing CMOS fabrication technology and a back end process without using photomasks are described. In the method, two curved arms each formed of a bi-layered metal structure from metals that have different coefficients of thermal expansion for residual stress are utilized for connecting to two ends of an inductor coil formed of AlCu between the two arms. When the insulating layer of silicon dioxide is removed from the curved arms, the free ends of the arms curve up and thus, raise the inductor coil away from the surface of the semiconductor substrate into a 3-dimensional structure. When electrical voltage is applied between lower electrodes formed on the substrate and the curved arms, electrostatic force is generated to further control the length of the inductor coil by pulling down or raising the curved arms.

摘要翻译： 描述了一种使用CMOS制造技术制造可调谐的三维螺线管的方法和不使用光掩模的后端工艺。 在该方法中，利用由具有不同的残余应力热膨胀系数的金属形成的双层金属结构的两个弯曲臂连接到由两个臂之间的AlCu形成的电感线圈的两端。 当从弯曲臂去除二氧化硅的绝缘层时，臂的自由端向上弯曲，从而将电感线圈从半导体衬底的表面放置成3维结构。 当在形成在基板上的下电极和弯曲臂之间施加电压时，产生静电力，以通过拉下或升高弯曲臂来进一步控制电感线圈的长度。

公开(公告)号：US06511609B2

公开(公告)日：2003-01-28

申请号：US09785170

申请日：2001-02-20

申请人： Ching-Han Jan ,  Fon-Shan Huang ,  Jih-Wen Wang

发明人： Ching-Han Jan ,  Fon-Shan Huang ,  Jih-Wen Wang

IPC分类号： H01L2100

CPC分类号： H01L21/76864 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76873

摘要： A novel method of Cu seed layer deposition for ULSI metalization is disclosed. The method of Cu seed layer deposition for ULSI metalization comprises forming a diffusion barrier on a substrate, forming a poly silicon layer, amorphous silicon layer or TaSix layer on said diffusion barrier, replacing said poly silicon layer with copper to form a copper seed layer, and electroplating a thick copper film on said copper seed layer. In this invention, a chemical replacing solution comprising a replacing reactant and at least one etchant is used to replace the poly silicon layer with copper and to reduce the quantity of byproducts of the reaction.