公开(公告)号：US06621139B2

公开(公告)日：2003-09-16

申请号：US10037084

申请日：2001-12-31

申请人： Kaihsiang Yen ,  Jing-Hung Chiou ,  Ran-Jin Lin ,  Jih-Wen Wang ,  Nai-Hao Kuo

发明人： Kaihsiang Yen ,  Jing-Hung Chiou ,  Ran-Jin Lin ,  Jih-Wen Wang ,  Nai-Hao Kuo

IPC分类号： A01F2706

CPC分类号： H01L27/08

摘要： A method for fabricating a tunable, 3-dimensional solenoid utilizing CMOS fabrication technology and a back end process without using photomasks are described. In the method, two curved arms each formed of a bi-layered metal structure from metals that have different coefficients of thermal expansion for residual stress are utilized for connecting to two ends of an inductor coil formed of AlCu between the two arms. When the insulating layer of silicon dioxide is removed from the curved arms, the free ends of the arms curve up and thus, raise the inductor coil away from the surface of the semiconductor substrate into a 3-dimensional structure. When electrical voltage is applied between lower electrodes formed on the substrate and the curved arms, electrostatic force is generated to further control the length of the inductor coil by pulling down or raising the curved arms.

摘要翻译： 描述了一种使用CMOS制造技术制造可调谐的三维螺线管的方法和不使用光掩模的后端工艺。 在该方法中，利用由具有不同的残余应力热膨胀系数的金属形成的双层金属结构的两个弯曲臂连接到由两个臂之间的AlCu形成的电感线圈的两端。 当从弯曲臂去除二氧化硅的绝缘层时，臂的自由端向上弯曲，从而将电感线圈从半导体衬底的表面放置成3维结构。 当在形成在基板上的下电极和弯曲臂之间施加电压时，产生静电力，以通过拉下或升高弯曲臂来进一步控制电感线圈的长度。

公开(公告)号：US20050064650A1

公开(公告)日：2005-03-24

申请号：US10992709

申请日：2004-11-22

申请人： Nai-Hao Kuo ,  Kai-Hsiang Yen ,  Jing-Hung Chiou ,  Po-Hao Tsai ,  Yuh-Wen Lee

发明人： Nai-Hao Kuo ,  Kai-Hsiang Yen ,  Jing-Hung Chiou ,  Po-Hao Tsai ,  Yuh-Wen Lee

IPC分类号： B81C99/00 ,  G01P15/08 ,  H01L21/8238

CPC分类号： B81C1/00619 ,  G01P15/0802

摘要： A fabrication method for microstructures with high aspect ratios uses a CMOS process to form a desired microstructure on a silicon substrate. The steps of forming a contact plug and a via plug of the process are used to form etching channels in insulation layers, polysilicon layers and metal layers, penetrating to the silicon substrate. An etching process is then performed through the etching channel to form the desired microstructure with high aspect ratio.

摘要翻译： 具有高纵横比的微结构的制造方法使用CMOS工艺在硅衬底上形成期望的微结构。 形成该工艺的接触塞和通孔的步骤用于在绝缘层，多晶硅层和金属层中形成穿透到硅衬底的蚀刻通道。 然后通过蚀刻通道进行蚀刻工艺以形成具有高纵横比的所需微结构。

公开(公告)号：US07125795B2

公开(公告)日：2006-10-24

申请号：US10992709

申请日：2004-11-22

申请人： Nai-Hao Kuo ,  Kai-Hsiang Yen ,  Jing-Hung Chiou ,  Po-Hao Tsai ,  Yuh-Wen Lee

发明人： Nai-Hao Kuo ,  Kai-Hsiang Yen ,  Jing-Hung Chiou ,  Po-Hao Tsai ,  Yuh-Wen Lee

IPC分类号： H01L21/4763

CPC分类号： B81C1/00619 ,  G01P15/0802

摘要： A fabrication method for microstructures with high aspect ratios uses a CMOS process to form a desired microstructure on a silicon substrate. The steps of forming a contact plug and a via plug of the process are used to form etching channels in insulation layers, polysilicon layers and metal layers, penetrating to the silicon substrate. An etching process is then performed through the etching channel to form the desired microstructure with high aspect ratio.

摘要翻译： 具有高纵横比的微结构的制造方法使用CMOS工艺在硅衬底上形成期望的微结构。 形成该工艺的接触塞和通孔的步骤用于在绝缘层，多晶硅层和金属层中形成穿透到硅衬底的蚀刻通道。 然后通过蚀刻通道进行蚀刻工艺以形成具有高纵横比的所需微结构。

公开(公告)号：US08501101B2

公开(公告)日：2013-08-06

申请号：US12979310

申请日：2010-12-27

申请人： I-Cherng Chen ,  Nai-Hao Kuo ,  Arthur Lin

发明人： I-Cherng Chen ,  Nai-Hao Kuo ,  Arthur Lin

IPC分类号： G01N15/06 ,  G01N33/00 ,  G01N33/48

CPC分类号： G01N27/127

摘要： A gas sensor is provided. The substrate of the gas sensor has a first surface, a second surface and a cavity. The cavity has an opening at the first surface. An insulating film is disposed on the first surface and covers the opening. A heating unit is embedded in the insulating film and located above the opening. An electrode pair is disposed on the insulating film and electrically separated from the heating unit. A buffer layer is disposed on the insulating film and located above the heating unit. The buffer layer is electrically connected to the electrode pair, and at least part of an orthogonal projection of the buffer layer on the first surface is located on the substrate next to the opening. The gas sensing layer is disposed on the buffer layer and has a nano-catalyst therein.

摘要翻译： 提供气体传感器。 气体传感器的基板具有第一表面，第二表面和空腔。 空腔在第一表面具有开口。 绝缘膜设置在第一表面上并覆盖开口。 加热单元嵌入绝缘膜并位于开口上方。 电极对设置在绝缘膜上并与加热单元电隔离。 缓冲层设置在绝缘膜上并位于加热单元上方。 缓冲层电连接到电极对，并且第一表面上的缓冲层的正交投影的至少一部分位于与开口相邻的基板上。 气体感测层设置在缓冲层上并在其中具有纳米催化剂。

公开(公告)号：US20120138459A1

公开(公告)日：2012-06-07

申请号：US12979310

申请日：2010-12-27

申请人： I-Cherng Chen ,  Nai-Hao Kuo ,  Arthur Lin

发明人： I-Cherng Chen ,  Nai-Hao Kuo ,  Arthur Lin

IPC分类号： G01N27/407

CPC分类号： G01N27/127

摘要： A gas sensor is provided. The substrate of the gas sensor has a first surface, a second surface and a cavity. The cavity has an opening at the first surface. An insulating film is disposed on the first surface and covers the opening. A heating unit is embedded in the insulating film and located above the opening. An electrode pair is disposed on the insulating film and electrically separated from the heating unit. A buffer layer is disposed on the insulating film and located above the heating unit. The buffer layer is electrically connected to the electrode pair, and at least part of an orthogonal projection of the buffer layer on the first surface is located on the substrate next to the opening. The gas sensing layer is disposed on the buffer layer and has a nano-catalyst therein.

摘要翻译： 提供气体传感器。 气体传感器的基板具有第一表面，第二表面和空腔。 空腔在第一表面具有开口。 绝缘膜设置在第一表面上并覆盖开口。 加热单元嵌入绝缘膜并位于开口上方。 电极对设置在绝缘膜上并与加热单元电隔离。 缓冲层设置在绝缘膜上并位于加热单元上方。 缓冲层电连接到电极对，并且第一表面上的缓冲层的正交投影的至少一部分位于与开口相邻的基板上。 气体感测层设置在缓冲层上并在其中具有纳米催化剂。

公开(公告)号：US20070000327A1

公开(公告)日：2007-01-04

申请号：US11326388

申请日：2006-01-06

申请人： Po-Hsun Sung ,  Wen-Wang Ke ,  Nai-Hao Kuo ,  Yu-Sheng Hsieh

发明人： Po-Hsun Sung ,  Wen-Wang Ke ,  Nai-Hao Kuo ,  Yu-Sheng Hsieh

IPC分类号： G01N29/04

CPC分类号： G01N29/022 ,  B01L3/5027 ,  G01N29/036 ,  G01N29/222 ,  G01N2291/012 ,  G01N2291/0255 ,  G01N2291/0426 ,  G01N2291/0427

摘要： An acoustic wave sensing device integrated with micro-channels and a method for the same are described. The present invention uses a piezoelectric substrate with a thinner portion serving as a sensing area and formed via a micromaching or chemical process. An inter-digital transducer (IDT) is located on the thinner portion to produce flexural plate waves (FPW). The micro-channels can be formed together with the thinner portion via the same manufacturing process, or integrated into the piezoelectric substrate via linkage. In the present invention, a novel manufacturing process and design are proposed for fabrication of the acoustic wave sensing devices with a good piezoelectric characteristic, a stable temperature compensation property, and a robust structure. Thereby, the techniques of flexural plate waves can be applied for liquid sensors. In this way, the drawbacks of the conventional acoustic wave sensing devices, such as poor piezoelectric properties and fragile film structures, are removed.

摘要翻译： 描述了与微通道集成的声波感测装置及其方法。 本发明使用具有较薄部分作为感测区域的压电基片，并通过微加工或化学工艺形成。 数字间换能器（IDT）位于较薄的部分，以产生弯曲板波（FPW）。 微通道可以通过相同的制造工艺与较薄部分一起形成，或者通过连接件集成到压电基板中。 在本发明中，提出了具有良好的压电特性，稳定的温度补偿特性和坚固的结构的用于制造声波检测装置的新型制造方法和设计。 因此，弯曲板波的技术可以应用于液体传感器。 以这种方式，消除了常规的声波检测装置的缺点，例如差的压电性能和脆弱的膜结构。

公开(公告)号：US20050051511A1

公开(公告)日：2005-03-10

申请号：US10745594

申请日：2003-12-29

申请人： Wen-Wang Ke ,  Wen-Yang Chang ,  Yu-Sheng Hsieh ,  Nai-Hao Kuo ,  Cheng-Hong Lee

发明人： Wen-Wang Ke ,  Wen-Yang Chang ,  Yu-Sheng Hsieh ,  Nai-Hao Kuo ,  Cheng-Hong Lee

IPC分类号： C40B60/14 ,  G01N27/12 ,  H01B13/00 ,  B05D3/12

CPC分类号： G01N27/12 ,  B01J2219/0036 ,  B01J2219/0043 ,  B01J2219/00659 ,  B01J2219/00662 ,  C40B60/14

摘要： A method for manufacturing chemical sensors is provided for the process of the wafer level chemical sensor. The method is to form a frame around a certain area on the chemical sensor for locating sensing material, and then to fill the Sol-Gel sensing material into the frame. Besides, the present invention further provides a method for dividing the chemical sensor chips employed in such wafer level chemical sensor. The character of such method is to stick an adhesion object such as blue tape on the backside of the substrate, and then to cut in advance a scribe line around the rim of the chemical sensor before filling the sensing material into the sensor. Finally, the plurality of the chemical sensors will be divided into individual ones after the process of calcining or furnacing.

摘要翻译： 为晶片级化学传感器的处理提供了用于制造化学传感器的方法。 该方法是在化学传感器的某一区域周围形成一个框架，用于定位传感材料，然后将溶胶 - 凝胶感应材料填充到框架中。 此外，本发明还提供了一种用于分割在这种晶片级化学传感器中使用的化学传感器芯片的方法。 这种方法的特征是在衬底的背面粘附诸如蓝带的粘合物体，然后在将感测材料填充到传感器中之前，预先切割化学传感器边缘周围的划线。 最后，在煅烧或加热过程之后，将多个化学传感器分为单个化学传感器。

公开(公告)号：US06737307B2

公开(公告)日：2004-05-18

申请号：US10185034

申请日：2002-06-28

申请人： Po-Hao Tsai ,  Nai-Hao Kuo ,  Wen-Jiun Liu ,  Yuh-Wen Lee

发明人： Po-Hao Tsai ,  Nai-Hao Kuo ,  Wen-Jiun Liu ,  Yuh-Wen Lee

IPC分类号： H01L2100

CPC分类号： H01L21/32055 ,  H01L21/28556 ,  H01L21/3205

摘要： A method for forming amorphous silicon films with low defect density on single crystal silicon substrates and structures formed. The method is carried out by first providing a single crystal silicon substrate, then depositing a buffer layer by a material such as silicon oxide, silicon nitride, silicon carbide or a metal on top of the single crystal silicon substrate. An amorphous silicon film of substantial thickness, i.e. of thicker than 1 &mgr;m, is then deposited on top of the buffer layer achieving a smooth top surface.

公开(公告)号：US09201035B2

公开(公告)日：2015-12-01

申请号：US13452675

申请日：2012-04-20

申请人： Chun-Te Chuang ,  Chun-Hsun Chu ,  I-Cherng Chen ,  Nai-Hao Kuo

发明人： Chun-Te Chuang ,  Chun-Hsun Chu ,  I-Cherng Chen ,  Nai-Hao Kuo

IPC分类号： G01N27/12 ,  G01N33/00

CPC分类号： G01N27/12 ,  G01N33/0016 ,  G01N33/004 ,  G01N33/0047 ,  G01N33/0059

摘要： A gas detecting system, device and method use a variable pulse voltage waveform to increase the temperature of a detecting unit of the gas detecting system so it reacts with gas molecules from a particular space, and outputs a sensing signal. A processing unit of the gas detecting system then performs calculations on the sensing signal, such that an analysis unit may determine the presence of a target gas in the particular space, and further the composition and concentration of the target gas within the particular space, thus providing a detection that is accurate, rapid and convenient.

摘要翻译： 气体检测系统，装置和方法使用可变脉冲电压波形来增加气体检测系统的检测单元的温度，使其与来自特定空间的气体分子反应，并输出感测信号。 然后，气体检测系统的处理单元对感测信号进行计算，使得分析单元可以确定特定空间中目标气体的存在，以及特定空间内目标气体的组成和浓度，因此 提供准确，快速，方便的检测。

公开(公告)号：US20130211732A1

公开(公告)日：2013-08-15

申请号：US13452675

申请日：2012-04-20

申请人： Chun-Te CHUANG ,  Chun-Hsun Chu ,  I-Cherng Chen ,  Nai-Hao Kuo

发明人： Chun-Te CHUANG ,  Chun-Hsun Chu ,  I-Cherng Chen ,  Nai-Hao Kuo

IPC分类号： G06F19/00 ,  G01N27/00

CPC分类号： G01N27/12 ,  G01N33/0016 ,  G01N33/004 ,  G01N33/0047 ,  G01N33/0059

摘要： A gas detecting system, device and method use a variable pulse voltage waveform to increase the temperature of a detecting unit of the gas detecting system so it reacts with gas molecules from a particular space, and outputs a sensing signal. A processing unit of the gas detecting system then performs calculations on the sensing signal, such that an analysis unit may determine the presence of a target gas in the particular space, and further the composition and concentration of the target gas within the particular space, thus providing a detection that is accurate, rapid and convenient.

摘要翻译： 气体检测系统，装置和方法使用可变脉冲电压波形来增加气体检测系统的检测单元的温度，使其与来自特定空间的气体分子反应，并输出感测信号。 然后，气体检测系统的处理单元对感测信号进行计算，使得分析单元可以确定特定空间中目标气体的存在，以及特定空间内的目标气体的组成和浓度，因此 提供准确，快速，方便的检测。