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    Interconnect structure and method of fabricating the same
    1.
    发明授权
    Interconnect structure and method of fabricating the same 有权
    互连结构及其制造方法

    公开(公告)号：US07858147B2

    公开(公告)日：2010-12-28

    申请号：US12229233

    申请日：2008-08-20

    申请人： Yu-Tsung Wu ,  Jen-Hong Huang ,  Chung-Min Tsai ,  Huan-Chieh Su ,  Tri-Rung Yew

    发明人： Yu-Tsung Wu ,  Jen-Hong Huang ,  Chung-Min Tsai ,  Huan-Chieh Su ,  Tri-Rung Yew

    IPC分类号： B05D5/12 ,  C23C16/00 ,  B05D3/00 ,  C23C14/00

    CPC分类号： H01L21/76823 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10T428/12625 ,  Y10T428/24851 ,  H01L2924/00

    摘要： A method of fabricating an interconnect structure is described. A substrate is provided. A patterned interfacial metallic layer is formed on the substrate. An amorphous carbon insulating layer or a carbon-based insulating layer is formed covering the substrate and the interfacial metallic layer. A conductive carbon line or plug is formed in the amorphous carbon or carbon-based insulating layer electrically connected with the interfacial metallic layer. An interconnect structure is also described, including a substrate, a patterned interfacial metallic layer on the substrate, an amorphous carbon insulating layer or a carbon-based insulating layer on the substrate, and a conductive carbon line or plug disposed in the amorphous carbon or carbon-based insulating layer and electrically connected with the interfacial metallic layer.

    摘要翻译： 描述制造互连结构的方法。 提供基板。 在基板上形成有图案的界面金属层。 形成覆盖基板和界面金属层的无定形碳绝缘层或碳基绝缘层。 在与界面金属层电连接的无定形碳或碳基绝缘层中形成导电碳线或插塞。 还描述了一种互连结构，包括衬底，衬底上的图案化界面金属层，衬底上的无定形碳绝缘层或碳基绝缘层，以及设置在无定形碳或碳中的导电碳线或插塞 的绝缘层，并与界面金属层电连接。

    Interconnect structure and method of fabricating the same
    2.
    发明申请
    Interconnect structure and method of fabricating the same 有权
    互连结构及其制造方法

    公开(公告)号：US20090197113A1

    公开(公告)日：2009-08-06

    申请号：US12229233

    申请日：2008-08-20

    申请人： Yu-Tsung Wu ,  Jen-Hong Huang ,  Chung-Min Tsai ,  Huan-Chieh Su ,  Tri-Rung Yew

    发明人： Yu-Tsung Wu ,  Jen-Hong Huang ,  Chung-Min Tsai ,  Huan-Chieh Su ,  Tri-Rung Yew

    IPC分类号： H01L21/70

    CPC分类号： H01L21/76823 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10T428/12625 ,  Y10T428/24851 ,  H01L2924/00

    摘要： A method of fabricating an interconnect structure is described. A substrate is provided. A patterned interfacial metallic layer is formed on the substrate. An amorphous carbon insulating layer or a carbon-based insulating layer is formed covering the substrate and the interfacial metallic layer. A conductive carbon line or plug is formed in the amorphous carbon or carbon-based insulating layer electrically connected with the interfacial metallic layer. An interconnect structure is also described, including a substrate, a patterned interfacial metallic layer on the substrate, an amorphous carbon insulating layer or a carbon-based insulating layer on the substrate, and a conductive carbon line or plug disposed in the amorphous carbon or carbon-based insulating layer and electrically connected with the interfacial metallic layer.

    摘要翻译： 描述制造互连结构的方法。 提供基板。 在基板上形成有图案的界面金属层。 形成覆盖基板和界面金属层的无定形碳绝缘层或碳基绝缘层。 在与界面金属层电连接的无定形碳或碳基绝缘层中形成导电碳线或插塞。 还描述了一种互连结构，包括衬底，衬底上的图案化界面金属层，衬底上的无定形碳绝缘层或碳基绝缘层，以及设置在无定形碳或碳中的导电碳线或插塞 的绝缘层，并与界面金属层电连接。

    P-TYPE TRANSPARENT CONDUCTIVE OXIDES AND SOLAR CELLS WITH P-TYPE TRANSPARENT CONDUCTIVE OXIDES
    3.
    发明申请
    P-TYPE TRANSPARENT CONDUCTIVE OXIDES AND SOLAR CELLS WITH P-TYPE TRANSPARENT CONDUCTIVE OXIDES 有权
    P型透明导电氧化物和具有P型透明导电氧化物的太阳能电池

    公开(公告)号：US20120118386A1

    公开(公告)日：2012-05-17

    申请号：US13104744

    申请日：2011-05-10

    申请人： Han-Yi CHEN ,  Chia-Hsiang Chen ,  Huan-Chieh Su ,  Kuo-Liang Liu ,  Tri-Rung Yew

    发明人： Han-Yi CHEN ,  Chia-Hsiang Chen ,  Huan-Chieh Su ,  Kuo-Liang Liu ,  Tri-Rung Yew

    IPC分类号： H01L31/02 ,  H01B1/08 ,  B82Y99/00

    CPC分类号： H01B1/08 ,  B82Y30/00 ,  C01G39/02 ,  C01P2002/54 ,  C01P2004/16 ,  C01P2004/17 ,  C01P2006/40 ,  H01G9/2031 ,  H01G9/2059 ,  H01L31/022466 ,  H01L31/035227 ,  H01L31/03529 ,  H01L31/072 ,  H01L31/1884 ,  H01L51/442 ,  Y02E10/50

    摘要： A p-type transparent conductive oxide and a solar cell containing the p-type transparent conducting oxide, wherein the p-type transparent conductive oxide includes a molybdenum trioxide doped with an element having less than six valence electrons, the element is selected from the group consisting of alkali metals, alkaline earth metals, group III elements, group IV, group V, transition elements and their combinations. Doping an element having less than six valence electron results in hole number increase, and thus increasing the hole drift velocity, and making Fermi level closer to the range of p-type materials. Hence, a p-type transparent conductive material is generated. This p-type transparent conducting oxide not only has high electron hole drift velocity, low resistivity, but also reaches a transmittance of 88% in the visible wavelength range, and therefore it is very suitable to be used in solar cells.

    摘要翻译： p型透明导电氧化物和含有p型透明导电氧化物的太阳能电池，其中p型透明导电氧化物包括掺杂有少于6价电子的元素的三氧化钼，该元素选自 由碱金属，碱土金属，III族元素，IV族，V族，过渡元素及其组合组成。 掺杂具有小于6价电子的元素导致孔数增加，从而增加空穴漂移速度，并使费米能级更接近p型材料的范围。 因此，产生p型透明导电材料。 该p型透明导电氧化物不仅具有高的电子空穴漂移速度，低电阻率，而且在可见光波长范围内也达到88％的透射率，因此非常适用于太阳能电池。

    MICROELECTRODE ARRAY AND METHOD FOR MODIFYING CARBON NANOTUBE ELECTRODE INTERFACE OF THE SAME ARRAY
    4.
    发明申请
    MICROELECTRODE ARRAY AND METHOD FOR MODIFYING CARBON NANOTUBE ELECTRODE INTERFACE OF THE SAME ARRAY 有权
    微电极阵列和修改同一阵列碳纳米管电极接口的方法

    公开(公告)号：US20130307520A1

    公开(公告)日：2013-11-21

    申请号：US12638429

    申请日：2009-12-15

    申请人： Shiang-Jie YEN ,  Huan-Chieh Su ,  Tri-Rung Yew ,  Yen-Chung Chang ,  Wei-Lun Hsu ,  Shih-Rung Yeh

    发明人： Shiang-Jie YEN ,  Huan-Chieh Su ,  Tri-Rung Yew ,  Yen-Chung Chang ,  Wei-Lun Hsu ,  Shih-Rung Yeh

    IPC分类号： C01B31/02 ,  A61N1/05

    CPC分类号： C01B31/0273 ,  A61N1/0502 ,  A61N1/0551 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174

    摘要： The present invention discloses a method for modifying a carbon nanotube electrode interface, which modifies carbon nanotubes used as a neuron-electrode interface by performing three stages of modifications and comprises the steps of: carboxylating carbon nanotubes to provide carboxyl functional groups and improve the hydrophilicity of the carbon nanotubes; acyl-chlorinating the carboxylated carbon nanotubes to replace the hydroxyl functional groups of the carboxyl functional groups with chlorine atoms; and aminating the acyl-chlorinated carbon nanotubes to replace the chlorine atoms with a derivative having amine functional groups at the terminal thereof. The modified carbon nanotubes used as the neuron-electrode interface has lower impedance and higher adherence to nerve cells. Thus is improved the quality of neural signal measurement. The present invention also discloses a microelectrode array, wherein the neuron-electrode interface uses carbon nanotubes modified according to the method of the present invention.

    摘要翻译： 本发明公开了一种修饰碳纳米管电极界面的方法，其通过进行三个阶段的修饰来改变用作神经元 - 电极界面的碳纳米管，并且包括以下步骤：使碳纳米管羧化以提供羧基官能团并提高其亲水性 碳纳米管; 酰化氯化羧化碳纳米管以用氯原子代替羧基官能团的羟基官能团; 并将酰基氯化碳纳米管胺化以在其末端具有胺官能团的衍生物代替氯原子。 用作神经元 - 电极界面的改性碳纳米管具有较低的阻抗和较高的对神经细胞的依从性。 因此提高了神经信号测量的质量。 本发明还公开了一种微电极阵列，其中神经电极界面使用根据本发明的方法改性的碳纳米管。

    Microelectrode array and method for modifying carbon nanotube electrode interface of the same array
    5.
    发明授权
    Microelectrode array and method for modifying carbon nanotube electrode interface of the same array 有权
    微电极阵列和相同阵列碳纳米管电极界面的修饰方法

    公开(公告)号：US08593052B1

    公开(公告)日：2013-11-26

    申请号：US12638429

    申请日：2009-12-15

    申请人： Shiang-Jie Yen ,  Huan-Chieh Su ,  Tri-Rung Yew ,  Yen-Chung Chang ,  Wei-Lun Hsu ,  Shih-Rung Yeh

    发明人： Shiang-Jie Yen ,  Huan-Chieh Su ,  Tri-Rung Yew ,  Yen-Chung Chang ,  Wei-Lun Hsu ,  Shih-Rung Yeh

    IPC分类号： H01J1/63 ,  H01J63/04 ,  H01J17/49

    CPC分类号： C01B31/0273 ,  A61N1/0502 ,  A61N1/0551 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174

    摘要： The present invention discloses a method for modifying a carbon nanotube electrode interface, which modifies carbon nanotubes used as a neuron-electrode interface by performing three stages of modifications and comprises the steps of: carboxylating carbon nanotubes to provide carboxyl functional groups and improve the hydrophilicity of the carbon nanotubes; acyl-chlorinating the carboxylated carbon nanotubes to replace the hydroxyl functional groups of the carboxyl functional groups with chlorine atoms; and aminating the acyl-chlorinated carbon nanotubes to replace the chlorine atoms with a derivative having amine functional groups at the terminal thereof. The modified carbon nanotubes used as the neuron-electrode interface has lower impedance and higher adherence to nerve cells. Thus is improved the quality of neural signal measurement. The present invention also discloses a microelectrode array, wherein the neuron-electrode interface uses carbon nanotubes modified according to the method of the present invention.

    摘要翻译： 本发明公开了一种修饰碳纳米管电极界面的方法，其通过进行三个阶段的修饰来改变用作神经元 - 电极界面的碳纳米管，并且包括以下步骤：使碳纳米管羧化以提供羧基官能团并提高其亲水性 碳纳米管; 酰化氯化羧化碳纳米管以用氯原子代替羧基官能团的羟基官能团; 并将酰基氯化碳纳米管胺化以在其末端具有胺官能团的衍生物代替氯原子。 用作神经元 - 电极界面的改性碳纳米管具有较低的阻抗和较高的对神经细胞的依从性。 因此提高了神经信号测量的质量。 本发明还公开了一种微电极阵列，其中神经电极界面使用根据本发明的方法改性的碳纳米管。

    P-type transparent conductive oxide for solar cell comprising molybdenum trioxide doped with indium
    7.
    发明授权
    P-type transparent conductive oxide for solar cell comprising molybdenum trioxide doped with indium 有权
    用于太阳能电池的P型透明导电氧化物，其包含掺杂有铟的三氧化钼

    公开(公告)号：US08609981B2

    公开(公告)日：2013-12-17

    申请号：US13104744

    申请日：2011-05-10

    申请人： Han-Yi Chen ,  Chia-Hsiang Chen ,  Huan-Chieh Su ,  Kuo-Liang Liu ,  Tri-Rung Yew

    发明人： Han-Yi Chen ,  Chia-Hsiang Chen ,  Huan-Chieh Su ,  Kuo-Liang Liu ,  Tri-Rung Yew

    IPC分类号： H01L31/00 ,  H01B1/02 ,  H01B1/08

    CPC分类号： H01B1/08 ,  B82Y30/00 ,  C01G39/02 ,  C01P2002/54 ,  C01P2004/16 ,  C01P2004/17 ,  C01P2006/40 ,  H01G9/2031 ,  H01G9/2059 ,  H01L31/022466 ,  H01L31/035227 ,  H01L31/03529 ,  H01L31/072 ,  H01L31/1884 ,  H01L51/442 ,  Y02E10/50

    摘要： A p-type transparent conductive oxide and a solar cell containing the p-type transparent conducting oxide, wherein the p-type transparent conductive oxide includes a molybdenum trioxide doped with an element having less than six valence electrons, the element is selected from the group consisting of alkali metals, alkaline earth metals, group III elements, group IV, group V, transition elements and their combinations. Doping an element having less than six valence electron results in hole number increase, and thus increasing the hole drift velocity, and making Fermi level closer to the range of p-type materials. Hence, a p-type transparent conductive material is generated. This p-type transparent conducting oxide not only has high electron hole drift velocity, low resistivity, but also reaches a transmittance of 88% in the visible wavelength range, and therefore it is very suitable to be used in solar cells.

    摘要翻译： p型透明导电氧化物和含有p型透明导电氧化物的太阳能电池，其中p型透明导电氧化物包括掺杂有少于6价电子的元素的三氧化钼，该元素选自 由碱金属，碱土金属，III族元素，IV族，V族，过渡元素及其组合组成。 掺杂具有小于6价电子的元素导致孔数增加，从而增加空穴漂移速度，并使费米能级更接近p型材料的范围。 因此，产生p型透明导电材料。 该p型透明导电氧化物不仅具有高的电子空穴漂移速度，低电阻率，而且在可见光波长范围内也达到88％的透射率，因此非常适用于太阳能电池。