公开(公告)号：US06677189B2

公开(公告)日：2004-01-13

申请号：US10008848

申请日：2001-11-30

申请人： Yuan-Tung Dai ,  Tsung-Neng Liao ,  Chih-Chiang Chen

发明人： Yuan-Tung Dai ,  Tsung-Neng Liao ,  Chih-Chiang Chen

IPC分类号： H01L2100

CPC分类号： H01L29/66757 ,  H01L29/78621

摘要： A polysilicon thin film transistor with a self-aligned LDD structure has a polysilicon layer formed on a transparent insulating substrate. The polysilicon layer consists of a channel region, an LDD structure on two sides of the channel region, and a source/drain region on two sides of the LDD structure. A gate insulating layer is formed on the polysilicon layer, a first metal layer is patterned on the gate insulating layer to cover the channel region, and a second metal layer is patterned on the first metal layer to cover the channel region.

摘要翻译： 具有自对准LDD结构的多晶硅薄膜晶体管具有形成在透明绝缘基板上的多晶硅层。 多晶硅层由沟道区，沟道区两侧的LDD结构以及LDD结构两侧的源/漏区构成。 在多晶硅层上形成栅极绝缘层，在栅极绝缘层上形成第一金属层以覆盖沟道区，在第一金属层上形成第二金属层以覆盖沟道区。

公开(公告)号：US06777309B1

公开(公告)日：2004-08-17

申请号：US10353180

申请日：2003-01-28

申请人： Tsung-Neng Liao ,  Yuan-Tung Dai ,  Chun-Chi Lee

发明人： Tsung-Neng Liao ,  Yuan-Tung Dai ,  Chun-Chi Lee

IPC分类号： H01L2130

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/78603 ,  H01L2221/68363

摘要： The present invention makes it possible to transfer thin film devices such as integrated semiconductor and optical components from a first substrate onto a second substrate through a thermal process at high temperature, without degradation of device performance. Other devices can be fabricated thereafter on the other side of the second substrate. Since the semiconductor and optical components can be transferred onto the second substrate in a single-step thermal process, in comparison with prior art the number of transfer substrates needed in the fabrication process can be effectively reduced, thus simplifying the fabrication process and realizing cost reduction.

摘要翻译： 本发明使得可以通过热过程在高温下将诸如集成半导体和光学部件的薄膜器件从第一衬底转移到第二衬底上，而不会降低器件性能。 此后可以在第二基板的另一侧上制造其它装置。 由于半导体和光学部件可以在单步热处理中转移到第二基板上，与现有技术相比，可以有效地减少制造工艺中所需的转印基板的数量，从而简化制造工艺并实现成本降低 。

公开(公告)号：US06989299B2

公开(公告)日：2006-01-24

申请号：US10373623

申请日：2003-02-25

申请人： Yuan-Tung Dai ,  Tsung-Neng Liao ,  Chun-Chi Lee

发明人： Yuan-Tung Dai ,  Tsung-Neng Liao ,  Chun-Chi Lee

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/14658

摘要： A method for fabricating on-chip spacers for a TFT panel exposes a photoresist layer on top of the TFT panel using two exposure processes, one through the bottom of the TFT and the other through a mask over the TFT panel. The exposure process through the bottom exposes all photoresist covering windows on the TFT panel and leaves all photoresist corresponding to an opaque grid corresponding a TFT driving circuit. A second exposure process through a mask above the photoresist leaves part of the photoresist in the opaque grid unexposed. The exposed photoresist is removed leaving on-chip spacers only on the opaque grid. Therefore, the on-chip spacers can not affect the display quality and can be easily formed on a high dpi TFT panel.

摘要翻译： 用于制造用于TFT面板的片上间隔物的方法使用两个曝光工艺在TFT面板的顶部上暴露光致抗蚀剂层，一个通过TFT的底部，另一个通过TFT面板上的掩模曝光。 通过底部的曝光过程暴露了TFT面板上的所有光致抗蚀剂覆盖窗口，并留下了对应于TFT驱动电路的不透明栅格的所有光刻胶。 通过光致抗蚀剂上方的掩模的第二曝光处理使得未曝光的不透明栅格中的光致抗蚀剂的部分。 去除暴露的光致抗蚀剂，留下仅在不透明网格上的片上间隔物。 因此，片上间隔物不会影响显示质量，并且可以容易地在高dpi TFT面板上形成。

公开(公告)号：US06730937B2

公开(公告)日：2004-05-04

申请号：US09748834

申请日：2000-12-26

申请人： Yuan-Tung Dai ,  Yuan-Ching Peng ,  Chien-Chih Chen

发明人： Yuan-Tung Dai ,  Yuan-Ching Peng ,  Chien-Chih Chen

IPC分类号： H01L3300

CPC分类号： H01L27/156 ,  H01L25/0753 ,  H01L2924/0002 ,  H01L2924/00

摘要： A full-color LED display includes red, green and blue LED elements. A first substrate is used to form red and green LED elements which are then covered by a first passivation layer. A second substrate is bonded to the passviation layer and polished as a thin substrate layer. A blue LED element is fabricated on the thin substrate layer. The three LED elements are then covered by a second passivation layer to construct a full-color LED device. A full-color, high resolution and high brightness LED display is formed by a plurality of full-color LED devices arranged in rows and columns in a matrix form.

摘要翻译： 全彩LED显示屏包括红色，绿色和蓝色LED元件。 第一衬底用于形成红色和绿色LED元件，然后被第一钝化层覆盖。 第二衬底被结合到钝化层并被抛光为薄的衬底层。 在薄的衬底层上制造蓝色LED元件。 然后，三个LED元件被第二钝化层覆盖以构成全色LED装置。 全彩色，高分辨率和高亮度LED显示器由以矩阵形式排列成行和列的多个全色LED装置形成。

公开(公告)号：US06475835B1

公开(公告)日：2002-11-05

申请号：US10084329

申请日：2002-02-28

申请人： Guo-Ren Hu ,  Ying-Chia Chen ,  Chi-Wei Chao ,  Yew-Chung Wu ,  Yao-Lun Hsu ,  Yuan-Tung Dai ,  Wen-Tung Wang

发明人： Guo-Ren Hu ,  Ying-Chia Chen ,  Chi-Wei Chao ,  Yew-Chung Wu ,  Yao-Lun Hsu ,  Yuan-Tung Dai ,  Wen-Tung Wang

IPC分类号： H01L2184

CPC分类号： H01L21/02672 ,  H01L21/2022 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： A method for forming a thin film transistor (TFT) is disclosed. The invention uses metal electroless plating or chemical displacement processes to form metal clusters adjacent the sidewall of amorphous silicon active region pattern so as to crystallize the amorphous silicon amid the subsequently performed metal induced lateral crystallization (MILC) process. The amorphous silicon is crystallized to form polysilicon having parallel grains. Since the amorphous silicon will crystallize with a specific angle which is measured between the grain orientation and the side wall of the amorphous silicon, a tilt channel connecting the source and drain region of the TFT is utilized to upgrade the electron mobility across the tilt channel, wherein the grain orientation of polysilicon in the tilt channel perpendicular to a gate electrode which is subsequently formed above the tilt channel.

摘要翻译： 公开了一种用于形成薄膜晶体管（TFT）的方法。 本发明使用金属化学镀或化学位移法在非晶硅有源区图案的侧壁附近形成金属簇，以便在随后进行的金属诱导横向结晶（MILC）工艺中使非晶硅结晶。 非晶硅结晶以形成具有平行晶粒的多晶硅。 由于非晶硅将以在非晶硅的晶粒取向和侧壁之间测量的特定角度结晶，所以利用连接TFT的源极和漏极区域的倾斜通道来提高跨越倾斜通道的电子迁移率， 其中所述倾斜通道中的多晶硅的晶粒取向垂直于随后形成在所述倾斜通道上方的栅电极。

公开(公告)号：US06713328B2

公开(公告)日：2004-03-30

申请号：US09918511

申请日：2001-08-01

申请人： Yuan-Tung Dai ,  Chi-Shen Lee ,  Jiun-Jye Chang

发明人： Yuan-Tung Dai ,  Chi-Shen Lee ,  Jiun-Jye Chang

IPC分类号： H01L2100

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L29/66757

摘要： A method for manufacturing thin film transistor panels in order to obviate the lowstability of conventional laser annealing processes, and the resultant low quality of the produced polycrystal silicon thin film. According to the method of the invention, form a transparent insulator on the front surface of a silicon substrate. Form a thin film transistor structure and transparent electrode on the upper surface of the transparent insulator. Bond a transparent substrate onto the front surface of the silicon substrate. After that, remove a portion of the silicon substrate by polishing or etching the back of the silicon substrate to obtained a transparent thin film transistor panel. The transparent electrode can also be formed on the bottom surface of the transparent insulator. Also, the transparent substrate can be bonded onto the back of the silicon substrate. Then reduce the thickness of the silicon substrate to generate a crystal silicon thin film. Form a thin film transistor structure layer and the transparent electrode required by the thin film transistor panel on the crystal silicon thin film.

摘要翻译： 制造薄膜晶体管板的方法是为了消除常规激光退火工艺的低稳定性，并且所得到的低质量的多晶硅薄膜。 根据本发明的方法，在硅衬底的前表面上形成透明绝缘体。 在透明绝缘子的上表面上形成薄膜晶体管结构和透明电极。 将透明衬底粘合到硅衬底的前表面上。 之后，通过抛光或蚀刻硅衬底的背面去除硅衬底的一部分，以获得透明薄膜晶体管面板。 透明电极也可以形成在透明绝缘体的底表面上。 此外，透明基板可以结合到硅基板的背面上。 然后减小硅衬底的厚度以产生晶体硅薄膜。 在晶体硅薄膜上形成薄膜晶体管结构层和薄膜晶体管面板所需的透明电极。

公开(公告)号：US06861302B2

公开(公告)日：2005-03-01

申请号：US10845102

申请日：2004-05-14

申请人： Yuan-Tung Dai

发明人： Yuan-Tung Dai

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1266 ,  H01L21/26506 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78603

摘要： A method of forming a thin film transistor on a transparent plate. A silicon layer having an active area is provided. A first ion implantation is performed to form a deeper doped region in the silicon layer. A second ion implantation is performed to form a shallower doped region in part of the silicon layer. A transistor structure is formed on the silicon layer located at the active area. A glass plate is formed on the transistor structure. An annealing process whose temperature is about 200° C.˜600° C. is performed to peel the silicon layer from the deeper doped region and the shallower doped region, and to form a silicon thin film adhered to the transistor structure. Thus, the silicon thin film transistor can be formed on the glass plate without a high temperature process.

摘要翻译： 在透明板上形成薄膜晶体管的方法。 提供具有有源区的硅层。 执行第一离子注入以在硅层中形成更深的掺杂区域。 执行第二离子注入以在硅层的一部分中形成较浅的掺杂区域。 在位于有源区的硅层上形成晶体管结构。 在晶体管结构上形成玻璃板。 进行温度为约200℃〜600℃的退火处理，以从较深掺杂区域和较浅掺杂区域剥离硅层，并形成粘附到晶体管结构的硅薄膜。 因此，可以在没有高温工艺的玻璃板上形成硅薄膜晶体管。

公开(公告)号：US06861301B2

公开(公告)日：2005-03-01

申请号：US10793916

申请日：2004-03-08

申请人： Yuan-Tung Dai

发明人： Yuan-Tung Dai

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1266 ,  H01L21/26506 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78603

摘要： A method of forming a thin film transistor on a transparent plate. A silicon layer having an active area is provided. A first ion implantation is performed to form a deeper doped region in the silicon layer. A second ion implantation is performed to form a shallower doped region in part of the silicon layer. A transistor structure is formed on the silicon layer located at the active area. A glass plate is formed on the transistor structures. An annealing process whose temperature is about 200° C.˜600° C. is performed to peel the silicon layer from the deeper doped region and the shallower doped region, and to form a silicon thin film adhered to the transistor structure. Thus, the silicon thin film transistor can be formed on the glass plate without a high temperature process.

摘要翻译： 在透明板上形成薄膜晶体管的方法。 提供具有有源区的硅层。 执行第一离子注入以在硅层中形成更深的掺杂区域。 执行第二离子注入以在硅层的一部分中形成较浅的掺杂区域。 在位于有源区的硅层上形成晶体管结构。 在晶体管结构上形成玻璃板。 进行温度为约200℃〜600℃的退火处理，以从较深掺杂区域和较浅掺杂区域剥离硅层，并形成粘附到晶体管结构的硅薄膜。 因此，可以在没有高温工艺的玻璃板上形成硅薄膜晶体管。

公开(公告)号：US06764887B2

公开(公告)日：2004-07-20

申请号：US10152671

申请日：2002-05-23

申请人： Yuan-Tung Dai

发明人： Yuan-Tung Dai

IPC分类号： H01L2184

CPC分类号： H01L27/1266 ,  H01L21/26506 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78603

摘要： A method of forming a thin film transistor on a transparent plate. A silicon layer having an active area is provided. A first ion implantation is performed to form a deeper doped region in the silicon layer. A second ion implantation is performed to form a shallower doped region in part of the silicon layer. A transistor structure is formed on the silicon layer located at the active area. A glass plate is formed on the transistor structure. An annealing process whose temperature is about 200° C.˜600° C. is performed to peel the silicon layer from the deeper doped region and the shallower doped region, and to form a silicon thin film adhered to the transistor structure. Thus, the silicon thin film transistor can be formed on the glass plate without a high temperature process.

公开(公告)号：US06670224B2

公开(公告)日：2003-12-30

申请号：US10033934

申请日：2002-01-03

申请人： Chi-shen Lee ,  Ting-Kuo Chang ,  Pi-Fu Chen ,  Yu-Ming Kang ,  Yuan-Tung Dai

发明人： Chi-shen Lee ,  Ting-Kuo Chang ,  Pi-Fu Chen ,  Yu-Ming Kang ,  Yuan-Tung Dai

IPC分类号： H01L2100

CPC分类号： H01L29/66757 ,  H01L29/458 ,  H01L29/4908

摘要： A manufacturing method of a thin film transistor (TFT) having low serial impedance is described. The method uses a back-side exposure and uses the active area as a hard mask; therefore, photomask usage may be reduced. On the other hand, a Si-Ge layer is used to react with the conductive layer deposited thereon after for forming a Ge-salicide layer. The method may reduce the required temperature of forming a Ge-salicide layer and the serial impedance.

摘要翻译： 描述具有低串联阻抗的薄膜晶体管（TFT）的制造方法。 该方法使用背面曝光，并使用有源区域作为硬掩模; 因此，可以减少光掩模的使用。 另一方面，在形成锗硅化物层之后，使用Si-Ge层与其上沉积的导电层反应。 该方法可以降低形成锗硅化物层所需的温度和串联阻抗。