公开(公告)号：US20060199357A1

公开(公告)日：2006-09-07

申请号：US11370228

申请日：2006-03-06

申请人： Yuet Wan ,  Rene de Blank ,  Jan Maes

发明人： Yuet Wan ,  Rene de Blank ,  Jan Maes

IPC分类号： H01L21/00 ,  H01L21/31

CPC分类号： H01L21/02321 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/02115 ,  H01L21/0217 ,  H01L21/02205 ,  H01L21/3115 ,  H01L21/3185 ,  H01L21/67017 ,  H01L21/67115 ,  H01L29/7833 ,  H01L29/7843

摘要： A silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses. A carbon precursor gas is also flowed into the chamber during introduction of the trisilane and/or during introduction of the reactive nitrogen species, or in pulses separate from the trisilane and reactive nitrogen species pulses. The carbon is used as a dopant in the silicon nitride film and advantageously allows a high stress silicon nitride film to be formed.

公开(公告)号：US07829457B2

公开(公告)日：2010-11-09

申请号：US12390145

申请日：2009-02-20

申请人： Tatsuya Yoshimi ,  Rene de Blank ,  Jerome Noiray

发明人： Tatsuya Yoshimi ,  Rene de Blank ,  Jerome Noiray

IPC分类号： H01L21/00

CPC分类号： H01L21/28556 ,  C23C16/34 ,  C23C16/56 ,  H01L21/76841

摘要： In some embodiments, after depositing conductive material on substrates in a deposition chamber, a reducing gas is introduced into as the chamber in preparation for unloading the substrates. The deposition chamber can be a batch CVD chamber and the deposited material can be a metal nitride, e.g., a transition metal nitride such as titanium metal nitride. As part of the preparation for unloading substrates from the chamber, the substrates may be cooled and the chamber is backfilled with a reducing gas to increase the chamber pressure. It has been found that oxidants can be introduced into the chamber during this time. The introduction of a reducing gas has been found to protect exposed metal-containing films from oxidation during the backfill and/or cooling process. The reducing gas is formed of a reducing agent and a carrier gas, with the reducing agent being a minority component of the reducing gas. By providing a reducing agent, the effects of oxidation on exposed metal-containing films is reduced, therefore enhancing the conductive properties of the metal films.

摘要翻译： 在一些实施例中，在沉积室中的基板上沉积导电材料之后，将还原气体引入到室中以准备卸载基板。 沉积室可以是分批CVD室，并且沉积材料可以是金属氮化物，例如过渡金属氮化物，例如钛金属氮化物。 作为用于从腔室卸载衬底的准备的一部分，衬底可以被冷却，并且用还原气体回填腔室以增加腔室压力。 已经发现，在此期间可以将氧化剂引入室中。 已经发现引入还原气体可以保护暴露的含金属膜在回填和/或冷却过程中免于氧化。 还原气体由还原剂和载气形成，还原剂是还原气体的少数成分。 通过提供还原剂，氧化对暴露的含金属膜的影响降低，因此提高金属膜的导电性能。

公开(公告)号：US5922624A

公开(公告)日：1999-07-13

申请号：US772338

申请日：1996-12-23

申请人： Steven Verhaverbeke ,  Mark Heyns ,  Menso Hendriks ,  Rene de Blank

发明人： Steven Verhaverbeke ,  Mark Heyns ,  Menso Hendriks ,  Rene de Blank

IPC分类号： H01L21/306 ,  H01L21/311 ,  C03C15/00 ,  B44C1/22

CPC分类号： H01L21/02049 ,  H01L21/31116

摘要： Method for semiconductor processing comprising etching of oxide layers, especially etching thick SiO.sub.2 layers and/or last step in the cleaning process wherein the oxide layers are etched in the gas phase with a mixture of hydrogen fluoride and one or more carboxylic acids, eventually in admixture with water.

摘要翻译： 用于半导体处理的方法包括蚀刻氧化物层，特别是蚀刻厚的SiO 2层和/或在清洁过程中的最后步骤，其中氧化物层在气相中用氟化氢和一种或多种羧酸的混合物进行蚀刻，最终以混合物 与水。

公开(公告)号：US08507388B2

公开(公告)日：2013-08-13

申请号：US12767657

申请日：2010-04-26

申请人： Steven R. A. Van Aerde ,  Rene de Blank

发明人： Steven R. A. Van Aerde ,  Rene de Blank

IPC分类号： H01L21/31

CPC分类号： H01L21/28556 ,  H01L21/28194 ,  H01L29/4966

摘要： In some embodiments, a reducing gas ambient containing a reducing agent is established in a batch process chamber before substrates are subjected to a deposition. The reducing atmosphere is established before and/or during loading of the substrates into the process chamber, and can include flowing reducing gas into the process chamber while the chamber is open. The reducing gas can be a mixture of a reducing agent and an inert gas, with the reducing agent being a minority component of the reducing gas. Using the reducing gas ambient, oxidation of substrate surfaces is reduced.

摘要翻译： 在一些实施方案中，在衬底经历沉积之前，在分批处理室中建立含有还原剂的还原气体环境。 还原气氛在将基材装载到处理室中之前和/或期间建立，并且可以包括在室打开时将还原气体流入处理室。 还原气体可以是还原剂和惰性气体的混合物，还原剂是还原气体的少数成分。 使用还原气体环境，基板表面的氧化降低。

公开(公告)号：US20100216306A1

公开(公告)日：2010-08-26

申请号：US12390145

申请日：2009-02-20

申请人： Tatsuya Yoshimi ,  Rene de Blank ,  Jerome Noiray

发明人： Tatsuya Yoshimi ,  Rene de Blank ,  Jerome Noiray

IPC分类号： H01L21/285

CPC分类号： H01L21/28556 ,  C23C16/34 ,  C23C16/56 ,  H01L21/76841

摘要： In some embodiments, after depositing conductive material on substrates in a deposition chamber, a reducing gas is introduced into as the chamber in preparation for unloading the substrates. The deposition chamber can be a batch CVD chamber and the deposited material can be a metal nitride, e.g., a transition metal nitride such as titanium metal nitride. As part of the preparation for unloading substrates from the chamber, the substrates may be cooled and the chamber is backfilled with a reducing gas to increase the chamber pressure. It has been found that oxidants can be introduced into the chamber during this time. The introduction of a reducing gas has been found to protect exposed metal-containing films from oxidation during the backfill and/or cooling process. The reducing gas is formed of a reducing agent and a carrier gas, with the reducing agent being a minority component of the reducing gas. By providing a reducing agent, the effects of oxidation on exposed metal-containing films is reduced, therefore enhancing the conductive properties of the metal films.

摘要翻译： 在一些实施例中，在沉积室中的基板上沉积导电材料之后，将还原气体引入到室中以准备卸载基板。 沉积室可以是分批CVD室，并且沉积材料可以是金属氮化物，例如过渡金属氮化物，例如钛金属氮化物。 作为用于从腔室卸载衬底的准备的一部分，衬底可以被冷却，并且用还原气体回填腔室以增加腔室压力。 已经发现，在此期间可以将氧化剂引入室中。 已经发现引入还原气体可以保护暴露的含金属膜在回填和/或冷却过程中免于氧化。 还原气体由还原剂和载气形成，还原剂是还原气体的少数成分。 通过提供还原剂，氧化对暴露的含金属膜的影响降低，因此提高金属膜的导电性能。

公开(公告)号：US20110263134A1

公开(公告)日：2011-10-27

申请号：US12767657

申请日：2010-04-26

申请人： Steven R.A. Van Aerde ,  Rene de Blank

发明人： Steven R.A. Van Aerde ,  Rene de Blank

IPC分类号： H01L21/318 ,  H01L21/302

CPC分类号： H01L21/28556 ,  H01L21/28194 ,  H01L29/4966

摘要： In some embodiments, a reducing gas ambient containing a reducing agent is established in a batch process chamber before substrates are subjected to a deposition. The reducing atmosphere is established before and/or during loading of the substrates into the process chamber, and can include flowing reducing gas into the process chamber while the chamber is open. The reducing gas can be a mixture of a reducing agent and an inert gas, with the reducing agent being a minority component of the reducing gas. Using the reducing gas ambient, oxidation of substrate surfaces is reduced.

摘要翻译： 在一些实施方案中，在衬底经历沉积之前，在分批处理室中建立含有还原剂的还原气体环境。 还原气氛在将基材装载到处理室中之前和/或期间建立，并且可以包括在室打开时将还原气体流入处理室。 还原气体可以是还原剂和惰性气体的混合物，还原剂是还原气体的少数成分。 使用还原气体环境，基板表面的氧化降低。