公开(公告)号：US07374941B2

公开(公告)日：2008-05-20

申请号：US11444169

申请日：2006-05-31

Applicant: Niklas Bondestam ,  Menso Hendriks

Inventor： Niklas Bondestam ,  Menso Hendriks

IPC: G01N33/00 ,  C23C16/455

CPC classification number: G01F1/72 ,  C23C16/4402 ,  C23C16/45525 ,  C30B25/14 ,  C30B25/165 ,  Y10T436/12

Abstract: A method and apparatus for determining changes in a supply system, designed to supply repeated pulses of a vapor phase reactant to a reaction chamber is disclosed. One embodiment involves providing the reactant source, and a gas conduit to connect the reactant source to the reaction chamber, a valve positioned in communication with the reactant source such that switching of the valve induces vapor phase reactant pulses from the reactant source to the reaction chamber and a sensor positioned in communication with the reactant source and configured to provide a signal indicative of a characteristic parameter of the reactant pulse as a function of time. A curve is derived from the signal and the shape of the curve is monitored to determine changes in the curve shape over time during subsequent pulses.

Abstract translation: 公开了一种用于确定供应系统的变化的方法和装置，其被设计成向反应室提供反应气相反应物的重复脉冲。 一个实施方案涉及提供反应物源和将反应物源连接到反应室的气体导管，与反应物源连通的阀，使得阀的切换将反应物源的气相反应物脉冲引入反应室 以及传感器，其定位成与反应物源连通并且被配置为提供表示作为时间的函数的反应物脉冲的特征参数的信号。 从信号导出曲线，并且监视曲线的形状以确定随后脉冲期间随着时间的曲线形状的变化。

公开(公告)号：US20080317972A1

公开(公告)日：2008-12-25

申请号：US11766625

申请日：2007-06-21

Applicant: Menso Hendriks ,  Martin Knapp ,  Suvi Haukka

Inventor： Menso Hendriks ,  Martin Knapp ,  Suvi Haukka

IPC: H05H1/24

CPC classification number: C23C16/308 ,  C23C16/18 ,  C23C16/30 ,  C23C16/34 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45523

Abstract: Films are deposited on a substrate by a process in which atomic layer deposition (ALD) is used to deposit one layer of the film and pulsed chemical vapor deposition (CVD) is used to deposit another layer of the film. During the ALD part of the process, a layer is formed by flowing sequential and alternating pulses of mutually reactive reactants that deposit self-limitingly on a substrate. During the pulsed CVD part of the process, another layer is deposited by flowing two CVD reactants into a reaction chamber, with at least a first of the CVD reactants flowed into the reaction chamber in pulses, with those pulses overlapping at least partially with the flow of a second of the CVD reactants. The ALD and CVD parts of the process ca be used to deposit layers with different compositions, thereby forming, e.g., nanolaminate films. Preferably, high quality layers are formed by flowing the second CVD reactant into the reaction chamber for a longer total duration than the first CVD reactant. In some embodiments, the pulses of the third reactant at separated by a duration at least about 1.75 times the length of the pulse. Preferably, less than about 8 monolayers of material are deposited per pulse of the first CVD reactant.

Abstract translation: 通过使用原子层沉积（ALD）沉积一层膜并使用脉冲化学气相沉积（CVD）沉积另一层膜的方法将膜沉积在衬底上。 在该过程的ALD部分期间，通过使在衬底上自发沉积的相互反应的反应物的顺序和交替脉冲流动形成层。 在该过程的脉冲CVD部分期间，通过使两个CVD反应物流入反应室来沉积另一层，其中至少一个CVD反应物以脉冲流入反应室，这些脉冲至少部分地与流动重叠 的二分之一的CVD反应物。 该方法的ALD和CVD部分可用于沉积具有不同组成的层，从而形成例如Nanolaminate膜。 优选地，通过使第二CVD反应物流入反应室中比第一CVD反应物更长的总持续时间形成高质量的层。 在一些实施方案中，第三反应物的脉冲以脉冲长度的至少约1.75倍的持续时间隔开。 优选地，每个脉冲的第一CVD反应物沉积少于约8个单层的材料。

公开(公告)号：US07063981B2

公开(公告)日：2006-06-20

申请号：US10066169

申请日：2002-01-30

Applicant: Niklas Bondestram ,  Menso Hendriks

Inventor： Niklas Bondestram ,  Menso Hendriks

IPC: G01N33/00 ,  C23C16/455

CPC classification number: G01F1/72 ,  C23C16/4402 ,  C23C16/45525 ,  C30B25/14 ,  C30B25/165 ,  Y10T436/12

Abstract: A method and apparatus for determining changes in a supply system, designed to supply repeated pulses of a vapor phase reactant to a reaction chamber is disclosed. One embodiment involves providing the reactant source, and a gas conduit to connect the reactant source to the reaction chamber, a valve positioned in communication with the reactant source such that switching of the valve induces vapor phase reactant pulses from the reactant source to the reaction chamber and a sensor positioned in communication with the reactant source and configured to provide a signal indicative of a characteristic parameter of the reactant pulse as a function of time. A curve is derived from the signal and the shape of the curve is monitored to determine changes in the curve shape over time during subsequent pulses.

公开(公告)号：US20080008975A1

公开(公告)日：2008-01-10

申请号：US11843530

申请日：2007-08-22

Applicant: Theodorus Oosterlaken ,  Frank Huussen ,  Menso Hendriks

Inventor： Theodorus Oosterlaken ,  Frank Huussen ,  Menso Hendriks

IPC: F27B9/10 ,  F27D7/02 ,  H01L21/02

CPC classification number: C23C16/44 ,  H01L21/28556 ,  H01L21/31658

Abstract: Substrates in a reaction chamber are sequentially exposed to at least three gas atmospheres: a first atmosphere of a first purge gas, a second atmosphere of a process gas and a third atmosphere of a second purge gas. The gases are introduced into the reaction chamber from one end of the chamber and exit from the opposite end. Successive gases entering the chamber are selected so that a stable interface with the immediately preceding gas can be maintained. For example, when the gases are fed into the chamber at the chamber's top end and are exhausted at the bottom end, the gases are chosen with successively lower molecular weights. In effect, each gas atmosphere stays on top of and pushes the previous gas atmosphere out of the chamber from the top down. Advantageously, the gases can be more effectively and completely removed from the chamber.

Abstract translation: 反应室中的底物依次暴露于至少三个气体环境：第一吹扫气体的第一气氛，处理气体的第二气氛和第二吹扫气体的第三气氛。 气体从腔室的一端引入反应室并从相对端排出。 选择进入腔室的连续气体，使得能够保持与前一个气体的稳定界面。 例如，当气体在室的顶端进料到室中并在底端被排出时，气体以连续较低的分子量被选择。 实际上，每个气体气体保持在顶部并将先前的气体气体从顶部向下推出室外。 有利地，气体可以更有效地并且完全从腔室移除。

公开(公告)号：US20060281184A1

公开(公告)日：2006-12-14

申请号：US11444169

申请日：2006-05-31

Applicant: Niklas Bondestam ,  Menso Hendriks

Inventor： Niklas Bondestam ,  Menso Hendriks

IPC: G05D21/00

CPC classification number: G01F1/72 ,  C23C16/4402 ,  C23C16/45525 ,  C30B25/14 ,  C30B25/165 ,  Y10T436/12

Abstract: A method and apparatus for determining changes in a supply system, designed to supply repeated pulses of a vapor phase reactant to a reaction chamber is disclosed. One embodiment involves providing the reactant source, and a gas conduit to connect the reactant source to the reaction chamber, a valve positioned in communication with the reactant source such that switching of the valve induces vapor phase reactant pulses from the reactant source to the reaction chamber and a sensor positioned in communication with the reactant source and configured to provide a signal indicative of a characteristic parameter of the reactant pulse as a function of time. A curve is derived from the signal and the shape of the curve is monitored to determine changes in the curve shape over time during subsequent pulses.

公开(公告)号：US07273819B2

公开(公告)日：2007-09-25

申请号：US11049048

申请日：2005-02-01

Applicant: Theodorus G. M. Oosterlaken ,  Frank Huussen ,  Menso Hendriks

Inventor： Theodorus G. M. Oosterlaken ,  Frank Huussen ,  Menso Hendriks

IPC: H01L21/31 ,  H01L21/469

CPC classification number: C23C16/44 ,  H01L21/28556 ,  H01L21/31658

Abstract: Substrates in a reaction chamber are sequentially exposed to at least three gas atmospheres: a first atmosphere of a first purge gas, a second atmosphere of a process gas and a third atmosphere of a second purge gas. The gases are introduced into the reaction chamber from one end of the chamber and exit from the opposite end. Successive gases entering the chamber are selected so that a stable interface with the immediately preceding gas can be maintained. For example, when the gases are fed into the chamber at the chamber's top end and are exhausted at the bottom end, the gases are chosen with successively lower molecular weights. In effect, each gas atmosphere stays on top of and pushes the previous gas atmosphere out of the chamber from the top down. Advantageously, the gases can be more effectively and completely removed from the chamber.

Abstract translation: 反应室中的底物依次暴露于至少三个气体环境：第一吹扫气体的第一气氛，处理气体的第二气氛和第二吹扫气体的第三气氛。 气体从腔室的一端引入反应室并从相对端排出。 选择进入腔室的连续气体，使得能够保持与前一个气体的稳定界面。 例如，当气体在室的顶端进料到室中并在底端被排出时，气体以连续较低的分子量被选择。 实际上，每个气体气体保持在顶部并将先前的气体气体从顶部向下推出室外。 有利地，气体可以更有效地并且完全从腔室移除。

公开(公告)号：US06759325B2

公开(公告)日：2004-07-06

申请号：US10303293

申请日：2002-11-22

Applicant: Ivo Raaijmakers ,  Pekka T. Soininen ,  Ernst Granneman ,  Suvi Haukka ,  Kai-Erik Elers ,  Marko Tuominen ,  Hessel Sprey ,  Herbert Terhorst ,  Menso Hendriks

Inventor： Ivo Raaijmakers ,  Pekka T. Soininen ,  Ernst Granneman ,  Suvi Haukka ,  Kai-Erik Elers ,  Marko Tuominen ,  Hessel Sprey ,  Herbert Terhorst ,  Menso Hendriks

IPC: H01L214763

CPC classification number: H01L21/76843 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Method and structures are provided for conformal lining of dual damascene structures in integrated circuits, and particularly of openings formed in porous materials. Trenches and contact vias are formed in insulating layers. The pores on the sidewalls of the trenches and vias are blocked, and then the structure is exposed to alternating chemistries to form monolayers of a desired lining material. In exemplary process flows chemical or physical vapor deposition (CVD or PVD) of a sealing layer blocks the pores due to imperfect conformality. An alternating process can also be arranged by selection of pulse separation and/or pulse duration to achieve reduced conformality relative to a self-saturating, self-limiting atomic layer deposition (ALD) process. In still another arrangement, layers with anisotropic pore structures can be sealed by selectively melting upper surfaces. Blocking is followed by a self-limiting, self-saturating atomic layer deposition (ALD) reactions without significantly filling the pores.

Abstract translation: 提供了用于集成电路中的双镶嵌结构的保形衬里的方法和结构，特别是在多孔材料中形成的开口。 沟槽和接触通孔形成在绝缘层中。 沟槽和通孔的侧壁上的孔堵塞，然后将结构暴露于交替的化学物质以形成所需衬里材料的单层。 在示例性工艺流程中，密封层的化学或物理气相沉积（CVD或PVD）由于不完美的共形性而堵塞孔。 也可以通过选择脉冲分离和/或脉冲持续时间来布置交替过程，以相对于自饱和的自限制性原子层沉积（ALD）工艺实现降低的共形。 在另一种布置中，可以通过选择性地熔化上表面来密封具有各向异性孔结构的层。 之后是自限制的，自饱和的原子层沉积（ALD）反应而没有显着填充孔隙。

公开(公告)号：US06740602B1

公开(公告)日：2004-05-25

申请号：US10391030

申请日：2003-03-17

Applicant: Menso Hendriks ,  Naoto Tsuji ,  Satoshi Takahashi

Inventor： Menso Hendriks ,  Naoto Tsuji ,  Satoshi Takahashi

IPC: H01L2131

CPC classification number: H01L21/02126 ,  B05D1/62 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633

Abstract: A method for forming a film having a low dielectric constant and high mechanical hardness on a semiconductor substrate by plasma reaction includes the steps of: (i) introducing a silicon-containing hydrocarbon gas as a source gas into a reaction space for plasma CVD processing wherein a semiconductor substrate is placed; and (ii) applying radio-frequency (RF) power of 1,000 W or higher to the reaction space while maintaining a pressure of the reaction space at 100 Pa or higher to activate plasma polymerization reaction in the reaction space, thereby forming a thin film on the semiconductor substrate.

Abstract translation: 通过等离子体反应在半导体衬底上形成具有低介电常数和高机械硬度的膜的方法包括以下步骤：（i）将含硅烃气体作为源气体引入用于等离子体CVD处理的反应空间中，其中 放置半导体衬底; 和（ii）将1000W以上的射频（RF）功率施加到反应空间，同时将反应空间的压力保持在100Pa以上，以激活反应空间中的等离子体聚合反应，从而在 半导体衬底。

公开(公告)号：US08017182B2

公开(公告)日：2011-09-13

申请号：US11766625

申请日：2007-06-21

Applicant: Menso Hendriks ,  Martin Knapp ,  Suvi Haukka

Inventor： Menso Hendriks ,  Martin Knapp ,  Suvi Haukka

IPC: C23C16/22

CPC classification number: C23C16/308 ,  C23C16/18 ,  C23C16/30 ,  C23C16/34 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45523

Abstract: Films are deposited on a substrate by a process in which atomic layer deposition (ALD) is used to deposit one layer of the film and pulsed chemical vapor deposition (CVD) is used to deposit another layer of the film. During the ALD part of the process, a layer is formed by flowing sequential and alternating pulses of mutually reactive reactants that deposit self-limitingly on a substrate. During the pulsed CVD part of the process, another layer is deposited by flowing two CVD reactants into a reaction chamber, with at least a first of the CVD reactants flowed into the reaction chamber in pulses, with those pulses overlapping at least partially with the flow of a second of the CVD reactants. The ALD and CVD parts of the process ca be used to deposit layers with different compositions, thereby forming, e.g., nanolaminate films. Preferably, high quality layers are formed by flowing the second CVD reactant into the reaction chamber for a longer total duration than the first CVD reactant. In some embodiments, the pulses of the third reactant at separated by a duration at least about 1.75 times the length of the pulse. Preferably, less than about 8 monolayers of material are deposited per pulse of the first CVD reactant.

Abstract translation: 通过使用原子层沉积（ALD）沉积一层膜并使用脉冲化学气相沉积（CVD）沉积另一层膜的方法将膜沉积在衬底上。 在该过程的ALD部分期间，通过使在衬底上自发沉积的相互反应的反应物的顺序和交替脉冲流动形成层。 在该过程的脉冲CVD部分期间，通过使两个CVD反应物流入反应室来沉积另一层，其中至少一个CVD反应物以脉冲流入反应室，这些脉冲至少部分地与流动重叠 的二分之一的CVD反应物。 该方法的ALD和CVD部分可用于沉积具有不同组成的层，从而形成例如Nanolaminate膜。 优选地，通过使第二CVD反应物流入反应室中比第一CVD反应物更长的总持续时间形成高质量的层。 在一些实施方案中，第三反应物的脉冲以脉冲长度的至少约1.75倍的持续时间隔开。 优选地，每个脉冲的第一CVD反应物沉积少于约8个单层的材料。

公开(公告)号：US07077614B1

公开(公告)日：2006-07-18

申请号：US09807580

申请日：1999-09-21

Applicant: Albert Hasper ,  Sebastiaan Eliza Nooten ,  Menso Hendriks

Inventor： Albert Hasper ,  Sebastiaan Eliza Nooten ,  Menso Hendriks

IPC: H01L21/677 ,  B65H1/00

CPC classification number: H01L21/67271 ,  H01L21/67769

Abstract: Sorting/storage device for wafers. A sorting device is provided in which at least two cassettes containing wafers may be present and the wafers are moved from one cassette to the other cassette or vice versa. If appropriate, a measuring station may be present in the sorting device. In the immediate vicinity of the sorting device, the cassettes are stored in a magazine which is designed for this purpose and the cassettes are moved using a handling device for cassettes.

Abstract translation: 晶圆分选/存放装置 提供一种分选装置，其中可以存在至少两个含有晶片的盒，并且晶片从一个盒移动到另一盒，反之亦然。 如果适当，测量站可能存在于分拣装置中。 在分拣装置的紧邻附近，将盒子存储在为此目的而设计的盒中，并且使用盒的处理装置移动盒。