摘要:
A thermoelectric conversion module includes a substrate and a plurality of thermoelectric conversion devices arranged on the surface of the substrate. The substrate is provided with a through hole formed to extend through the surface and the back thereof, and the thermoelectric conversion devices are arranged on at least one of the surface and the back of the substrate so as to enclose the through hole. The thermoelectric conversion device includes the thermoelectric conversion module, and a tube arranged to extend through the through hole of the thermoelectric conversion module and to allow a hot medium or a cold medium to flow therethrough. A method for manufacturing a thermoelectric conversion module includes a step of arranging a plurality of thermoelectric conversion devices on at least one of the surface and the back of a substrate having a through hole extending through the surface and the back thereof so as to enclose the through hole.
摘要:
A thermoelectric conversion material includes a complex oxide containing Zn, Al, Ga, and B. The thermoelectric conversion material is one in which a ratio of a molar amount of B to a total molar amount of Zn, Al, Ga, and B is not less than 0.0001 and not more than 0.01. The thermoelectric conversion material is one in which the relative density of the complex oxide is not less than 95% The thermoelectric conversion material is one in which at least a part of a surface of the complex oxide is coated with a film. A thermoelectric conversion module is provided with a plurality of n-type thermoelectric conversion materials, a plurality of p-type thermoelectric conversion materials, and a plurality of electrodes electrically serially connecting the p-type thermoelectric conversion materials and the n-type thermoelectric conversion materials in an alternate arrangement, and at least one material of the plurality of n-type thermoelectric conversion materials is the aforementioned thermoelectric conversion material.
摘要:
A pressing member is prevented from being damaged by heat, heat dissipation through the pressing member on the higher-temperature side and reduction in thermoelectric conversion efficiency due to it are suppressed, and good electrical conduction is achieved even if thermoelectric conversion elements and electrodes are not cemented through a binder. A lower-temperature side electrode 6 is projecting toward a higher-temperature side substrate 8 and the lower-temperature side electrode 6 is formed with slope faces 6a, 6b, and an angle θ of each of the slope face to a surface of a lower-temperature side substrate 7 is an acute angle. A face 3a of a p-type thermoelectric conversion element 3 in contact with the lower-temperature side electrode 6 is along one slope face 6a of the lower-temperature side electrode and a face 4b of an n-type thermoelectric conversion element 4 in contact with the lower-temperature side electrode 6 is along the other slope face 6b of the lower-temperature side electrode 6; the p-type thermoelectric conversion element 3 and the n-type thermoelectric conversion element 4 are in contact with the lower-temperature side electrode 6 through the respective slope faces; a pressing member 5 presses a portion on the lower-temperature side substrate side of an outside thermoelectric conversion element 10, toward the other outside thermoelectric conversion element 10.
摘要:
Provided is a method for manufacturing a thermoelectric conversion element. The method includes a metal layer formation step of comprising spreading a metal compound which decomposes upon heating to generate a metal, on a surface of a thermoelectric conversion element main body heated to the decomposition temperature of the metal compound or higher.
摘要:
A thermoelectric conversion material contains a mixed oxide containing Zn, Ga, and In. The thermoelectric conversion material is one in which the mixed oxide further contains Al. The thermoelectric conversion material is one in which the relative density of the mixed oxide is not less than 80%. The thermoelectric conversion material is one in which at least a part of a surface of the mixed oxide is coated with a film. A thermoelectric conversion module is provided with a plurality of n-type thermoelectric conversion materials, a plurality of p-type thermoelectric conversion materials, and a plurality of electrodes electrically serially connecting the p-type thermoelectric conversion materials with the n-type thermoelectric conversion materials in an alternate arrangement, and at least one material of the plurality of n-type thermoelectric conversion materials is the aforementioned thermoelectric conversion material.
摘要:
There is provided a method for manufacturing a thermoelectric conversion module that allows adhesiveness between a thermoelectric conversion element and an electrode to be further increased. It is a method for manufacturing a thermoelectric conversion module 1 that comprises a step of bonding thermoelectric conversion elements 10 to electrodes 6, 8 by electromagnetic induction heating of the thermoelectric conversion elements 10.
摘要:
Disclosed are a sintered body and a thermoelectric conversion material. The sintered body comprises a manganese-based oxide as a main component, and further comprises an oxide A wherein the oxide A represents one or more members selected from among nickel oxides, copper oxide and zinc oxide, and a metal M wherein the metal M represents one or more members selected from among Pd, Ag, Pt and Au.
摘要:
The present invention provides thermoelectric conversion devices and production methods thereof. The thermoelectric conversion device includes: a thermoelectric conversion device main body having a ridge portion and/or a vertex portion at which a ridge and/or a vertex have/has been subjected to a chamfering process; and a film covering a surface of the thermoelectric conversion device main body, including the ridge portion and/or the vertex portion thereof.
摘要:
A thermoelectric conversion module is provided. The thermoelectric conversion module includes a plurality of thermoelectric devices and an electrode for electrically connecting the thermoelectric devices in series, wherein the electrode has a hole section opened to the outside of the electrode and metal which is in liquid state within the used temperature range is stored in the hole section.
摘要:
A thin-film semiconductor epitaxial substrate comprising a substrate and a sub-collector layer, a collector layer, a base layer and an emitter layer(s) which are formed as thin-film semiconductor epitaxial layers on said substrate, wherein boron (B) added is present in at least a part of a layer portion comprising said sub-collector layer and said collector layer.