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261 条记录 (耗时 0.031 秒)

    Thin film head
    1.
    发明授权
    Thin film head 有权
    薄膜头

    公开(公告)号：US06172858B2

    公开(公告)日：2001-01-09

    申请号：US09479651

    申请日：2000-01-07

    申请人： Hiroaki Yoda ,  Yuichi Ohsawa ,  Kohichi Tateyama ,  Reiko Kondoh ,  Toshihiko Ohta ,  Junichi Akiyama ,  Hitoshi Iwasaki

    发明人： Hiroaki Yoda ,  Yuichi Ohsawa ,  Kohichi Tateyama ,  Reiko Kondoh ,  Toshihiko Ohta ,  Junichi Akiyama ,  Hitoshi Iwasaki

    IPC分类号： G11B5127

    CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3912 ,  G11B5/3919 ,  G11B5/3932 ,  G11B5/3967 ,  G11B5/399 ,  G11B2005/0016 ,  G11B2005/0018 ,  G11B2005/3996 ,  Y10T29/49025

    摘要： The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films, a nonmagnetic film sandwiched between the magnetic films, and leads connected to the magnetoresistance effect element wherein the width of one of the magnetic films, which essentially responds to a signal magnetic field, is not more than a distance between leads. The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films and a nonmagnetic film sandwiched between the magnetic films, which makes use of a change in magnetic resistance caused by spin-dependent scattering, wherein at least a portion of one magnetic films, which essentially respond to a signal magnetic field extends in a direction same as that of the signal magnetic field.

    摘要翻译： 本发明提供了一种具有磁阻效应元件的薄膜头，该磁阻效应元件包括至少两个磁性膜，夹在磁性膜之间的非磁性膜和连接到磁阻效应元件的引线，其中一个磁性膜的宽度基本上 响应信号磁场，不超过引线之间的距离。 本发明提供了具有磁阻效应元件的薄膜头，该磁阻效应元件包括至少两个磁性膜和夹在磁性膜之间的非磁性膜，其利用由自旋依赖性散射引起的磁阻的变化，其中至少一个 基本上响应于信号磁场的一个磁性膜的部分在与信号磁场的方向相同的方向上延伸。

    Magnetic head
    2.
    发明授权
    Magnetic head 失效
    磁头

    公开(公告)号：US6157525A

    公开(公告)日：2000-12-05

    申请号：US340717

    申请日：1999-06-29

    申请人： Hitoshi Iwasaki ,  Reiko Kondoh ,  Hiroaki Yoda ,  Yuichi Ohsawa ,  Yuzo Kamiguchi ,  Susumu Hashimoto

    发明人： Hitoshi Iwasaki ,  Reiko Kondoh ,  Hiroaki Yoda ,  Yuichi Ohsawa ,  Yuzo Kamiguchi ,  Susumu Hashimoto

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

    摘要： A magnetoresistive head includes a magnetoresistive effect element including a magnetoresistive film, which has a first ferromagnetic layer and a second ferromagnetic layer separated by a nonmagnetic layer. A magnetization direction of the first ferromagnetic layer is perpendicular to a magnetization direction of the second ferromagnetic layer when a signal magnetic field is zero. A pair of bias layers provide magnetic bias, and a top surface of each of the pair of bias layers faces a lower surface of each edge region of the magnetoresistive film. A pair of lead electrodes produce a current flow through the magnetoresistive film, and each of the pair of lead electrodes is disposed on or above the magnetoresistive film.

    摘要翻译： 磁阻头包括具有磁阻膜的磁阻效应元件，该磁阻效应元件具有由非磁性层分离的第一铁磁层和第二铁磁层。 当信号磁场为零时，第一铁磁层的磁化方向垂直于第二铁磁层的磁化方向。 一对偏置层提供磁偏置，并且该对偏压层中的每一个的顶表面面对磁阻膜的每个边缘区域的下表面。 一对引线电极产生通过磁阻膜的电流，并且一对引线电极中的每一个设置在磁阻膜上或上方。

    Magnetoresistance effect head with conductor film pair and magnetic field proving film pair disposed between substrate and magnetoresistance effect film
    3.
    发明授权
    Magnetoresistance effect head with conductor film pair and magnetic field proving film pair disposed between substrate and magnetoresistance effect film 失效
    具有导体膜对的磁阻效应头和设置在衬底和磁阻效应膜之间的磁场证明膜对

    公开(公告)号：US5896251A

    公开(公告)日：1999-04-20

    申请号：US577075

    申请日：1995-12-22

    申请人： Yuichi Ohsawa ,  Hiroaki Yoda ,  Reiko Kondoh

    发明人： Yuichi Ohsawa ,  Hiroaki Yoda ,  Reiko Kondoh

    IPC分类号： G11B5/31 ,  G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3932

    摘要： A magnetoresistance effect head comprises a magnetoresistance effect element portion including a magnetoresistance effect film having a magnetic field response portion, a magnetic field providing film for providing the magnetoresistance effect film with a bias magnetic field, and a conductor film for supplying a current to the magnetoresistance effect film, wherein the magnetoresistance effect element portion has a laminate structure portion being composed of at least the conductor film, the magnetic field providing film, and the magnetoresistance effect film layered in this order at other than the magnetic field response portion. The magnetoresistance effect head is obtained by patterning a laminate film composed of a conductor film and a magnetic field providing film corresponding to a lead shape, forming an MR film, and patterning the MR film corresponding to a lead shape and the shape of a magnetic field response portion. Alternatively, a magnetic field providing film and a conductor film are layered in the order in a passive region other than the magnetic field response portion, forming a laminate film such that the magnetic field providing film is exposed at surface of the edge portion on the magnetic field response portion side. The MR film is formed on almost only the magnetic field response portion so that the MR film overlaps with the exposed portion of the magnetic field providing film.

    摘要翻译： 磁阻效应头包括具有磁场响应部分的磁阻效应膜的磁阻效应元件部分，用于提供具有偏磁场的磁阻效应膜的磁场提供膜，以及用于向磁阻提供电流的导体膜 其中所述磁阻效应元件部分具有至少由所述导体膜，所述磁场提供膜和所述磁阻效应膜构成的层叠结构部分，所述层叠结构部分按所述顺序层叠在所述磁场响应部以外。 磁阻效应头是通过对由导体膜构成的叠层膜和与引线形状相对应的磁场提供膜构成的MR膜进行构图，并且对与引线形状对应的MR膜和磁场的形状 响应部分。 或者，磁场提供膜和导体膜在除磁场响应部以外的无源区域中依次层叠，形成层叠膜，使得磁场提供膜在磁性边缘部分的表面露出 场响应部分侧。 MR膜几乎仅形成在磁场响应部分上，使得MR膜与磁场提供膜的暴露部分重叠。

    Magneto-resistive head
    4.
    发明授权
    Magneto-resistive head 失效
    磁阻头

    公开(公告)号：US5461527A

    公开(公告)日：1995-10-24

    申请号：US340448

    申请日：1994-11-14

    申请人： Junichi Akiyama ,  Yuichi Ohsawa ,  Hitoshi Iwasaki ,  Reiko Kondoh ,  Kohichi Tateyama ,  Toshihiko Ohta ,  Hiroaki Yoda

    发明人： Junichi Akiyama ,  Yuichi Ohsawa ,  Hitoshi Iwasaki ,  Reiko Kondoh ,  Kohichi Tateyama ,  Toshihiko Ohta ,  Hiroaki Yoda

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3932 ,  G11B5/399

    摘要： A member having a first and a second magnetic layer are magnetostatically coupled and laminated and the first magnetic layer formed on a magneto-resistive element, for creating the exchange coupling on the magneto-resistive element and the first magnetic layer. The member is formed by sequentially laminating a first ferromagnetic layer magnetized in a sense along the direction of the longitudinal bias of the magneto-resistive element, non-magnetic layer and second ferromagnetic layer magnetized in a direction opposite to the magnetized direction of the first ferromagnetic layer, for example.

    摘要翻译： 具有第一和第二磁性层的构件被静磁耦合和层叠，并且第一磁性层形成在磁阻元件上，用于在磁阻元件和第一磁性层上产生交换耦合。 该构件通过沿着磁阻元件的方向磁化的第一铁磁层顺序地层叠，非磁性层和第二铁磁层沿与第一铁磁体的磁化方向相反的方向被磁化的方向 层，例如。

    METHOD OF MANUFACTURING MAGNETIC MEMORY
    8.
    发明申请
    METHOD OF MANUFACTURING MAGNETIC MEMORY 失效
    制造磁记忆的方法

    公开(公告)号：US20120244639A1

    公开(公告)日：2012-09-27

    申请号：US13226868

    申请日：2011-09-07

    申请人： Yuichi OHSAWA ,  Shigeki Takahashi ,  Junichi Ito ,  Daisuke Saida ,  Kyoichi Suguro ,  Hiroaki Yoda

    发明人： Yuichi OHSAWA ,  Shigeki Takahashi ,  Junichi Ito ,  Daisuke Saida ,  Kyoichi Suguro ,  Hiroaki Yoda

    IPC分类号： H01L43/12

    CPC分类号： H01L43/12 ,  H01L29/82

    摘要： According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning.

    摘要翻译： 根据一个实施例，一种制造磁存储器的方法，该方法包括形成具有可变磁化强度的第一磁性层，在第一磁性层上形成隧道势垒层，在隧道势垒层上形成第二磁性层， 具有不变磁化的磁性层，在第二磁性层上形成硬掩模层作为掩模，通过使用硬掩模层的掩模对第二磁性层进行构图，并使用硬掩模的掩模执行GCIB照射 层，图案后。

    Yoke type magnetoresistance head and manufacturing method of the same
    10.
    发明授权
    Yoke type magnetoresistance head and manufacturing method of the same 失效
    轭型磁阻头及其制造方法

    公开(公告)号：US06256863B1

    公开(公告)日：2001-07-10

    申请号：US08815179

    申请日：1997-03-11

    申请人： Kazuhiro Saito ,  Akiko Saito ,  Hitoshi Iwasaki ,  Akihiko Tsutai ,  Hiroaki Yoda ,  Tadahiko Kobayashi ,  Yuichi Ohsawa ,  Masahi Sahashi ,  Yuzo Kamiguchi

    发明人： Kazuhiro Saito ,  Akiko Saito ,  Hitoshi Iwasaki ,  Akihiko Tsutai ,  Hiroaki Yoda ,  Tadahiko Kobayashi ,  Yuichi Ohsawa ,  Masahi Sahashi ,  Yuzo Kamiguchi

    IPC分类号： G11B542

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3113 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3916 ,  G11B2005/3996 ,  Y10T29/49034

    摘要： A magnetic yoke having a magnetic gap provided in the side of the surface facing the medium is disposed on the surface of a substrate. An MR film is disposed on the surface of the magnetic yoke substantially parallel to the substrate with a predetermined separation from the surface S facing the medium. At least both end portions of the MR film are magnetically coupled to the magnetic yoke. A pair of leads for supplying sensing current to the MR film have magnetic lead portions formed from the same magnetic layers as the magnetic yoke. The magnetic lead portions curb deterioration of MR head properties and yield reduction during formation of the leads. Furthermore, a bias magnetic field is applied to the magnetic yoke and the MR film at least during operation of the head. This bias magnetic field is for instance provided by a magnetic field induced by the electric current. Alternatively, a magnetic field induced by the electric current is applied while heat-processing the magnetic yoke. Magnetic anisotropy is induced to the magnetic yoke in a direction differing according to the position. This magnetic anisotropy curbs Barkhausen noise caused by the magnetic yoke.

    摘要翻译： 在基板的表面上设置具有设置在面向介质的表面侧的磁隙的磁轭。 以与面向介质的表面S预定间隔的方式将磁性薄膜基本上平行于基板平行设置在磁轭的表面上。 MR膜的至少两个端部磁耦合到磁轭。 用于向MR膜提供感测电流的一对引线具有由与磁轭相同的磁性层形成的磁性引线部分。 磁性引线部分在引线形成期间抑制MR磁头特性的劣化和屈服减少。 此外，至少在头部的操作期间，向磁轭和MR膜施加偏置磁场。 该偏置磁场例如由电流引起的磁场提供。 或者，在对磁轭进行加热处理的同时施加由电流引起的磁场。 磁性各向异性在根据位置不同的方向上被引到磁轭上。 这种磁各向异性限制了由磁轭引起的Barkhausen噪声。