Yoke type magnetoresistance head and manufacturing method of the same
    1.
    发明授权
    Yoke type magnetoresistance head and manufacturing method of the same 失效
    轭型磁阻头及其制造方法

    公开(公告)号:US06256863B1

    公开(公告)日:2001-07-10

    申请号:US08815179

    申请日:1997-03-11

    IPC分类号: G11B542

    摘要: A magnetic yoke having a magnetic gap provided in the side of the surface facing the medium is disposed on the surface of a substrate. An MR film is disposed on the surface of the magnetic yoke substantially parallel to the substrate with a predetermined separation from the surface S facing the medium. At least both end portions of the MR film are magnetically coupled to the magnetic yoke. A pair of leads for supplying sensing current to the MR film have magnetic lead portions formed from the same magnetic layers as the magnetic yoke. The magnetic lead portions curb deterioration of MR head properties and yield reduction during formation of the leads. Furthermore, a bias magnetic field is applied to the magnetic yoke and the MR film at least during operation of the head. This bias magnetic field is for instance provided by a magnetic field induced by the electric current. Alternatively, a magnetic field induced by the electric current is applied while heat-processing the magnetic yoke. Magnetic anisotropy is induced to the magnetic yoke in a direction differing according to the position. This magnetic anisotropy curbs Barkhausen noise caused by the magnetic yoke.

    摘要翻译: 在基板的表面上设置具有设置在面向介质的表面侧的磁隙的磁轭。 以与面向介质的表面S预定间隔的方式将磁性薄膜基本上平行于基板平行设置在磁轭的表面上。 MR膜的至少两个端部磁耦合到磁轭。 用于向MR膜提供感测电流的一对引线具有由与磁轭相同的磁性层形成的磁性引线部分。 磁性引线部分在引线形成期间抑制MR磁头特性的劣化和屈服减少。 此外,至少在头部的操作期间,向磁轭和MR膜施加偏置磁场。 该偏置磁场例如由电流引起的磁场提供。 或者,在对磁轭进行加热处理的同时施加由电流引起的磁场。 磁性各向异性在根据位置不同的方向上被引到磁轭上。 这种磁各向异性限制了由磁轭引起的Barkhausen噪声。

    Magnetoresistance effect element
    5.
    发明授权
    Magnetoresistance effect element 有权
    磁阻效应元件

    公开(公告)号:US6111729A

    公开(公告)日:2000-08-29

    申请号:US313767

    申请日:1999-05-18

    摘要: A magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer formed on a metallic buffer layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the metallic buffer layer and the first magnetic layer. Or a magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer composed of a laminated film of a magnetic undercoat layer and a ferromagnetic layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the middle non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the magnetic undercoat layer and the ferromagnetic layer.

    摘要翻译: 设置有由形成在金属缓冲层上的第一磁性层,形成在第一磁性层上的中间非磁性层和形成在非磁性层上的第二磁性层构成的自旋阀膜的磁阻效应元件具有 在金属缓冲层和第一磁性层之间的界面形成平均厚度为2nm以下的原子扩散阻挡层。 或设置有由由磁性底涂层和铁磁层的层叠膜构成的第一磁性层,形成在第一磁性层上的中间非磁性层和第二磁性层构成的自旋阀膜的磁阻效应元件 在中间非磁性层上形成的平均厚度为2nm以下的原子扩散阻挡层形成在磁性底涂层和铁磁层之间的界面中。

    Magneto-resistance effect element and magnetic head
    6.
    发明授权
    Magneto-resistance effect element and magnetic head 失效
    磁阻效应元件和磁头

    公开(公告)号:US6052262A

    公开(公告)日:2000-04-18

    申请号:US38848

    申请日:1998-03-12

    IPC分类号: G11B5/012 G11B5/39 H01L43/08

    摘要: A magneto-resistance effect element comprising a spin valve film including a first magnetic layer, a second magnetic layer and a non-magnetic layer interposed between the first magnetic layer and the second magnetic layer. Among the first and the second magnetic layers, in at least one of the magnetic layers, close-packed faces of crystal grains which constitute the magnetic layer are isotropically dispersed. Such a magnetic layer, by setting a film thickness of an under layer having an identical crystal structure with the magnetic layer at 2.0 nm or less and by dispersing isotropically close-packed faces of crystal grains constituting the under layer, can be obtained with reproducibility. According to a magneto-resistance effect element comprising such a spin valve film, while maintaining a large MR change rate, for example, magnetostriction constant can satisfy such a low magnetostriction as 1.times.10.sup.-6 or less. Further, excellent soft magnetic property can be provided.

    摘要翻译: 一种磁电阻效应元件,包括自旋阀膜,该自旋阀膜包括介于第一磁性层和第二磁性层之间的第一磁性层,第二磁性层和非磁性层。 在第一和第二磁性层中,在至少一个磁性层中,构成磁性层的晶粒的紧密堆积面各向同性地分散。 通过将具有与磁性层相同的晶体结构的下层的膜厚设定为2.0nm以下,通过使构成下层的晶粒的各向同性紧密堆积面分散,可以得到这样的磁性层。 根据包含这种自旋阀膜的磁阻效应元件,在保持大的MR变化率的同时,例如,磁致伸缩常数可满足1×10 -6以下的低磁致伸缩性。 此外,可以提供优异的软磁性。

    Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same
    7.
    发明授权
    Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same 失效
    交换耦合膜的叠层磁致伸缩元件,反铁磁膜和铁磁膜以及使用它的磁盘驱动器

    公开(公告)号:US06313973B1

    公开(公告)日:2001-11-06

    申请号:US09343270

    申请日:1999-06-30

    IPC分类号: G11B530

    摘要: A magnetoresistive element comprises an exchange coupling film having a under layer, an antiferromagnetic film and a ferromagnetic film, which are laminated in that order, the under layer including a metal having a face centered cubic crystal structure or hexagonal closest packing crystal structure which have a longer nearest neighbor atomic distance than that of the antiferromagnetic film. With this construction, it is possible to improve the exchange coupling field and to satisfy a stable output over a long period of time. A magnetoresistive element having a dual spin valve structure has a magnetization adjusting layer, which is antiferromagnetically connected to a pinned layer via an anti-parallel connection layer, to adjust the value of the product of the saturation magnetization of each of the magnetization adjusting layer and the pinned layer by the thickness thereof. Moreover, a magnetoresistance head use a giant magnetoresistance effect, and has at least one pair of pinned layer and free layer arranged via a non-magnetic spacer layer. The pinned layer has a pair of ferromagnetic layers which have different compositions and different coercive forces and which are antiferromagnetically connected to each other via a connection layer, so that the effective exchange coupling field of the pinned layer is 200 Oe or more.

    摘要翻译: 磁阻元件包括具有下层,反铁磁膜和铁磁膜的交换耦合膜,其按顺序层压,下层包括具有面心立方晶体结构的金属或具有六面体最密堆积晶体结构的金属,其具有 比反铁磁膜的最近邻原子距离更长。 利用这种结构,可以改善交换耦合场并且能够长时间地满足稳定的输出。 具有双自旋阀结构的磁阻元件具有磁化调节层,其通过反并联连接层反铁磁连接到被钉扎层,以调节每个磁化调节层的饱和磁化强度和 被钉扎层的厚度。 此外,磁阻头使用巨磁电阻效应,并且具有通过非磁性间隔层布置的至少一对被钉扎层和自由层。 钉扎层具有一对铁磁层,其具有不同的组成和不同的矫顽力,并且经由连接层彼此反铁磁连接,使得钉扎层的有效交换耦合场为200Oe以上。

    Permanent magnet
    8.
    发明授权
    Permanent magnet 失效
    永久磁铁

    公开(公告)号:US06475302B2

    公开(公告)日:2002-11-05

    申请号:US09749803

    申请日:2000-12-28

    IPC分类号: H01F1055

    摘要: Disclosed is a permanent magnet which comprises an alloy containing a hard magnetic phase having a ThMn12 type tetragonal structure and a nonmagnetic phase. The alloy is represented by a general formula given below: [R1-a(M1)a][T1-b-c(M2)b(M3)c]dx&agr; where R is at least one rare earth element (including Y), Ml is at least one element selected from the group consisting of Zr and Hf, T is at least one element selected from the group consisting of Fe, Co and Ni, M2 is at least one element selected from the group consisting of Cu, Bi, Sn, Mg, In and Pb, M3 is at least one element selected from the group consisting of Al, Ga, Ge, Zn, B, P and S, X is at least one element selected from the group consisting of Si, Ti, V, Cr, Mn, Nb, Mo, Ta and W, and the atomic ratios of a, b, c, d and &agr; fall within the ranges of 0≦a≦0.6, 0.01≦b≦0.20, 0≦c≦0.05, 6≦d≦11, and 0.5≦&agr;≦2.0.

    摘要翻译: 公开了一种永磁体,其包含含有ThMn 12型四方晶系的硬磁相和非磁性相的合金。 该合金由以下给出的通式表示:其中R是至少一种稀土元素(包括Y),M1是选自Zr和Hf中的至少一种元素,T是至少一种选自 由Fe,Co和Ni构成的组,M2是选自Cu,Bi,Sn,Mg,In和Pb中的至少一种元素,M3是选自Al,Ga,Ge中的至少一种元素 ,Zn,B,P和S中的至少一种,X是选自由Si,Ti,V,Cr,Mn,Nb,Mo,Ta和W组成的组中的至少一种元素,并且a,b,c, d和α落在0 <= a <= 0.6,0.01 <= b <= 0.20,0 <= c <= 0.05,6 <= d <= 11和0.5 <=α<2.0的范围内。

    Regenerating material and refrigerator using the same
    9.
    发明授权
    Regenerating material and refrigerator using the same 失效
    再生材料和冰箱使用相同

    公开(公告)号:US5593517A

    公开(公告)日:1997-01-14

    申请号:US305916

    申请日:1994-09-15

    摘要: The regenerating material according to the present invention comprises two alloy phases which differ in a content of rare earth elements. Of these alloy phases, a dominant phase in the regenerating material is defined as a main phase, and the other phase is defined as a sub-phase. A plurality of particles, each of which consists of a granular main phase and a sub-phase present on the surface of the main phase, gathers to form an aggregate. Otherwise, a sub-phase present in a main phase in the form of fiber. The refrigerator according to the present invention comprises a regenerator charged with above-mentioned regenerating material, a coolant gas and an expansion means for expanding the coolant gas.

    摘要翻译: 根据本发明的再生材料包括稀土元素含量不同的两个合金相。 在这些合金相中,再生材料中的主相被定义为主相,另一相被定义为子相。 多个颗粒,每个颗粒由存在于主相表面上的颗粒状主相和亚相组成,聚集形成聚集体。 否则,以纤维形式存在于主相中的子阶段。 根据本发明的冰箱包括装有上述再生材料的再生器,冷却剂气体和用于膨胀冷却剂气体的膨胀装置。

    Magnetic refrigerating device and magnetic refrigerating system
    10.
    发明授权
    Magnetic refrigerating device and magnetic refrigerating system 有权
    磁性制冷装置及磁性制冷系统

    公开(公告)号:US08935927B2

    公开(公告)日:2015-01-20

    申请号:US13079451

    申请日:2011-04-04

    IPC分类号: F25B21/00

    摘要: The magnetic refrigerating device according to one embodiment includes a fixed container filled with a refrigerant, the fixed container including a magnetic material container that is filled with a magnetic material and that can move in the fixed container and an elastic member provided at the end of the magnetic material container. The magnetic refrigerating device also includes a magnetic-field applying/removing mechanism that is provided at the outside of the fixed container, and that can apply and remove a magnetic field to and from the magnetic material and can generate a magnetic torque to the magnetic material container in moving direction of the magnetic material container.

    摘要翻译: 根据一个实施例的磁性制冷装置包括填充有制冷剂的固定容器,该固定容器包括填充有磁性材料并且可以在固定容器中移动的磁性材料容器和设置在固定容器的末端的弹性构件 磁性材料容器。 磁性制冷装置还包括设置在固定容器的外部的磁场施加/移除机构,并且可以向磁性材料施加磁场和从磁性材料除去磁场,并且可以向磁性材料产生磁力矩 容器在磁性材料容器的移动方向上。