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公开(公告)号:US08716034B2
公开(公告)日:2014-05-06
申请号:US13226868
申请日:2011-09-07
申请人: Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
发明人: Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
IPC分类号: H01L21/00
摘要: According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning.
摘要翻译: 根据一个实施例,一种制造磁存储器的方法,该方法包括形成具有可变磁化强度的第一磁性层,在第一磁性层上形成隧道势垒层,在隧道势垒层上形成第二磁性层, 具有不变磁化的磁性层,在第二磁性层上形成硬掩模层作为掩模,通过使用硬掩模层的掩模对第二磁性层进行构图,并使用硬掩模的掩模执行GCIB照射 层,图案后。
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公开(公告)号:US20120244640A1
公开(公告)日:2012-09-27
申请号:US13226960
申请日:2011-09-07
申请人: Yuichi OHSAWA , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
发明人: Yuichi OHSAWA , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
IPC分类号: H01L43/12
摘要: According to one embodiment, a method of manufacturing a multilayer film, the method includes forming a first layer, forming a second layer on the first layer, and transcribing a crystal information of one of the first and second layers to the other one of the first and second layers by executing a GCIB-irradiation to the second layer.
摘要翻译: 根据一个实施例,一种制造多层膜的方法,该方法包括:形成第一层,在第一层上形成第二层,以及将第一层和第二层之一的晶体信息转录到第一层中的另一层 并且通过对第二层执行GCIB照射来产生第二层。
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公开(公告)号:US20120244639A1
公开(公告)日:2012-09-27
申请号:US13226868
申请日:2011-09-07
申请人: Yuichi OHSAWA , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
发明人: Yuichi OHSAWA , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
IPC分类号: H01L43/12
摘要: According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning.
摘要翻译: 根据一个实施例,一种制造磁存储器的方法,该方法包括形成具有可变磁化强度的第一磁性层,在第一磁性层上形成隧道势垒层,在隧道势垒层上形成第二磁性层, 具有不变磁化的磁性层,在第二磁性层上形成硬掩模层作为掩模,通过使用硬掩模层的掩模对第二磁性层进行构图,并使用硬掩模的掩模执行GCIB照射 层,图案后。
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公开(公告)号:US09082961B2
公开(公告)日:2015-07-14
申请号:US13226960
申请日:2011-09-07
申请人: Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
发明人: Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
摘要: According to one embodiment, a method of manufacturing a multilayer film, the method includes forming a first layer, forming a second layer on the first layer, and transcribing a crystal information of one of the first and second layers to the other one of the first and second layers by executing a GCIB-irradiation to the second layer.
摘要翻译: 根据一个实施例,一种制造多层膜的方法,该方法包括:形成第一层,在第一层上形成第二层,以及将第一层和第二层之一的晶体信息转录到第一层中的另一层 并且通过对第二层执行GCIB照射来产生第二层。
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公开(公告)号:US08981507B2
公开(公告)日:2015-03-17
申请号:US13534673
申请日:2012-06-27
申请人: Shigeki Takahashi , Kyoichi Suguro , Junichi Ito , Yuichi Ohsawa , Hiroaki Yoda
发明人: Shigeki Takahashi , Kyoichi Suguro , Junichi Ito , Yuichi Ohsawa , Hiroaki Yoda
IPC分类号: H01L43/12
CPC分类号: H01L43/12
摘要: According to one embodiment, a method for manufacturing a nonvolatile memory device including a plurality of memory cells is disclosed. Each of the plurality of memory cells includes a base layer including a first electrode, a magnetic tunnel junction device provided on the base layer, and a second electrode provided on the magnetic tunnel junction device. The magnetic tunnel junction device includes a first magnetic layer, a tunneling barrier layer provided on the first magnetic layer, and a second magnetic layer provided on the tunneling barrier layer. The method can include etching a portion of the second magnetic layer and a portion of the first magnetic layer by irradiating gas clusters onto a portion of a surface of the second magnetic layer or a portion of a surface of the first magnetic layer.
摘要翻译: 根据一个实施例,公开了一种用于制造包括多个存储单元的非易失性存储器件的方法。 多个存储单元中的每一个包括基底层,其包括第一电极,设置在基底层上的磁性隧道结器件和设置在磁性隧道结装置上的第二电极。 磁隧道结装置包括第一磁性层,设置在第一磁性层上的隧道势垒层,以及设置在隧道势垒层上的第二磁性层。 该方法可以包括通过将气体簇照射到第二磁性层的表面的一部分或第一磁性层的表面的一部分上来蚀刻第二磁性层的一部分和第一磁性层的一部分。
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公开(公告)号:US08878317B2
公开(公告)日:2014-11-04
申请号:US13210678
申请日:2011-08-16
申请人: Tadaomi Daibou , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
发明人: Tadaomi Daibou , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
CPC分类号: H01L43/02 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/10
摘要: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.
摘要翻译: 根据实施例的磁阻元件包括:第一至第三铁磁层和第一非磁性层,第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴,所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动,旋转磁场由进动运动产生,并且是 施加到第一铁磁层,并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。
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公开(公告)号:US20130069185A1
公开(公告)日:2013-03-21
申请号:US13416724
申请日:2012-03-09
申请人: Daisuke SAIDA , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
发明人: Daisuke SAIDA , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
IPC分类号: H01L29/82
CPC分类号: H01F10/3286 , G11C11/16 , G11C11/161 , G11C11/1659 , H01F10/3236 , H01F10/329 , H01L43/08
摘要: According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction.
摘要翻译: 根据一个实施例,磁存储元件包括堆叠体,其包括彼此堆叠的第一和第二堆叠单元。 第一堆叠单元包括第一和第二铁磁层和设置在它们之间的第一非磁性层。 第二堆叠单元包括第三和第四铁磁层和设置在它们之间的第二非磁性层。 第二和第三铁磁层的磁化是可变的。 第一和第四铁磁层的磁化在垂直于层表面的方向固定。 当沿垂直于堆叠方向的平面切割时,第三铁磁层的横截面面积小于第一堆叠单元的横截面面积。
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公开(公告)号:US08716817B2
公开(公告)日:2014-05-06
申请号:US13416724
申请日:2012-03-09
申请人: Daisuke Saida , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
发明人: Daisuke Saida , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
IPC分类号: H01L29/82
CPC分类号: H01F10/3286 , G11C11/16 , G11C11/161 , G11C11/1659 , H01F10/3236 , H01F10/329 , H01L43/08
摘要: According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction.
摘要翻译: 根据一个实施例,磁存储元件包括堆叠体,其包括彼此堆叠的第一和第二堆叠单元。 第一堆叠单元包括第一和第二铁磁层和设置在它们之间的第一非磁性层。 第二堆叠单元包括第三和第四铁磁层和设置在它们之间的第二非磁性层。 第二和第三铁磁层的磁化是可变的。 第一和第四铁磁层的磁化在垂直于层表面的方向固定。 当沿垂直于堆叠方向的平面切割时,第三铁磁层的横截面面积小于第一堆叠单元的横截面面积。
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公开(公告)号:US20120241827A1
公开(公告)日:2012-09-27
申请号:US13210678
申请日:2011-08-16
申请人: Tadaomi DAIBOU , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
发明人: Tadaomi DAIBOU , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
CPC分类号: H01L43/02 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/10
摘要: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.
摘要翻译: 根据实施例的磁阻元件包括:第一至第三铁磁层和第一非磁性层,第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴,所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动,旋转磁场由进动运动产生,并且是 施加到第一铁磁层,并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。
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公开(公告)号:US08488375B2
公开(公告)日:2013-07-16
申请号:US13037592
申请日:2011-03-01
申请人: Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Shigeki Takahashi
发明人: Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Shigeki Takahashi
IPC分类号: G11C11/14
CPC分类号: H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/228
摘要: According to one embodiment, a magnetic recording element includes a stacked body including a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer and a first nonmagnetic layer. Magnetization of the first ferromagnetic layer is substantially fixed in a first direction being perpendicular to a first ferromagnetic layer surface. The second stacked unit includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second nonmagnetic layer. Magnetization of the fourth ferromagnetic layer is substantially fixed in a second direction being perpendicular to a fourth ferromagnetic layer surface. The first direction is opposite to the second direction.
摘要翻译: 根据一个实施例,磁记录元件包括包括第一堆叠单元和第二堆叠单元的堆叠体。 第一堆叠单元包括第一铁磁层,第二铁磁层和第一非磁性层。 第一铁磁层的磁化在垂直于第一铁磁层表面的第一方向上基本固定。 第二堆叠单元包括第三铁磁层,第四铁磁层和第二非磁性层。 第四铁磁层的磁化在垂直于第四铁磁层表面的第二方向上基本固定。 第一方向与第二方向相反。
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