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    Production methods of pattern thin film, semiconductor element, and circuit substrate, and resist material, semiconductor element, and circuit substrate
    1.
    发明授权
    Production methods of pattern thin film, semiconductor element, and circuit substrate, and resist material, semiconductor element, and circuit substrate 有权
    图案薄膜，半导体元件和电路基板以及抗蚀剂材料，半导体元件和电路基板的制造方法

    公开(公告)号：US07858415B2

    公开(公告)日：2010-12-28

    申请号：US11918398

    申请日：2006-01-31

    申请人： Yuichi Saito ,  Takeshi Hara

    发明人： Yuichi Saito ,  Takeshi Hara

    IPC分类号： H01L21/84

    CPC分类号： H01L27/1285 ,  H01L27/1288 ,  H01L27/1292

    摘要： The present invention provides production methods of a pattern thin film, a semiconductor element and a circuit substrate, capable of eliminating the number of photolithography processes needed for patterning; and a semiconductor element, a circuit substrate, and an electron device obtained by the production methods. The production method of the pattern thin film of the present invention is a production method of a pattern thin film, comprising the steps of: forming a first resist pattern film on a thin film formed on a substrate; forming a second resist pattern film; patterning the thin film using at least the second resist pattern film, wherein in the step of forming the second resist pattern film, a fluid resist material or an organic solvent is applied on a groove of a bank pattern formed using the first resist pattern film.

    摘要翻译： 本发明提供了能够消除图案化所需的光刻处理次数的图案薄膜，半导体元件和电路基板的制造方法; 以及通过制造方法得到的半导体元件，电路基板和电子元件。 本发明的图案薄膜的制造方法是图案薄膜的制造方法，包括以下工序：在形成于基板上的薄膜上形成第一抗蚀剂图案膜; 形成第二抗蚀剂图案膜; 使用至少第二抗蚀剂图案膜对薄膜进行图案化，其中在形成第二抗蚀剂图案膜的步骤中，将流体抗蚀剂材料或有机溶剂施加到使用第一抗蚀剂图案膜形成的堤形图案的凹槽上。

    Production methods of a patterned thin film, semiconductor element, and circuit substrate using fluid resist material
    2.
    发明授权
    Production methods of a patterned thin film, semiconductor element, and circuit substrate using fluid resist material 有权
    使用流体抗蚀剂材料的图案化薄膜，半导体元件和电路基板的制造方法

    公开(公告)号：US08283218B2

    公开(公告)日：2012-10-09

    申请号：US12917078

    申请日：2010-11-01

    申请人： Yuichi Saito ,  Takeshi Hara

    发明人： Yuichi Saito ,  Takeshi Hara

    IPC分类号： H01L21/77 ,  H01L21/8234

    CPC分类号： H01L27/1285 ,  H01L27/1288 ,  H01L27/1292

    摘要： A production method of a semiconductor element having a channel includes forming a resist pattern film on a thin film formed on a substrate, and pattering the thin film by etching. The production method also includes forming a second resist pattern film by applying a fluid resist material inside a channel groove after channel etching or inside a resist groove formed above a channel region before channel etching. The production method may also include forming a gate electrode, a gate insulating film, a semiconductor film, and a conductive film on an insulating substrate. The method may include applying the fluid resist material inside the channel groove, thereby forming the second resist pattern film, and patterning the semiconductor film using at least the second resist pattern film.

    摘要翻译： 具有通道的半导体元件的制造方法包括在形成于基板上的薄膜上形成抗蚀剂图案膜，并通过蚀刻对薄膜进行图案化。 该制造方法还包括通过在沟道蚀刻之后在沟道槽内部施加流动抗蚀剂材料或在通道蚀刻之前形成在通道区域上方的抗蚀剂槽内部形成第二抗蚀剂图案膜。 制造方法还可以包括在绝缘基板上形成栅电极，栅绝缘膜，半导体膜和导电膜。 该方法可以包括将流体抗蚀剂材料施加在沟道槽内，从而形成第二抗蚀剂图案膜，并使用至少第二抗蚀剂图案膜来图案化半导体膜。

    PRODUCTION METHODS OF PATTERN THIN FILMS, SEMICONDUCTOR ELEMENT, AND CIRCUIT SUBSTRATE, AND RESIST MATERIAL, SEMICONDUCTOR ELEMENT, AND CIRCUIT SUBSTRATE
    3.
    发明申请
    PRODUCTION METHODS OF PATTERN THIN FILMS, SEMICONDUCTOR ELEMENT, AND CIRCUIT SUBSTRATE, AND RESIST MATERIAL, SEMICONDUCTOR ELEMENT, AND CIRCUIT SUBSTRATE 有权
    图案薄膜，半导体元件和电路基板，耐电极材料，半导体元件和电路基板的生产方法

    公开(公告)号：US20090078937A1

    公开(公告)日：2009-03-26

    申请号：US11918398

    申请日：2006-01-31

    申请人： Yuichi Saito ,  Takeshi Hara

    发明人： Yuichi Saito ,  Takeshi Hara

    IPC分类号： H01L29/04 ,  G03F7/20 ,  G03F7/004 ,  H01L21/336

    CPC分类号： H01L27/1285 ,  H01L27/1288 ,  H01L27/1292

    摘要： The present invention provides production methods of a pattern thin film, a semiconductor element and a circuit substrate, capable of eliminating the number of photolithography processes needed for patterning; and a semiconductor element, a circuit substrate, and an electron device obtained by the production methods. The production method of the pattern thin film of the present invention is a production method of a pattern thin film, comprising the steps of: forming a first resist pattern film on a thin film formed on a substrate; forming a second resist pattern film; patterning the thin film using at least the second resist pattern film, wherein in the step of forming the second resist pattern film, a fluid resist material or an organic solvent is applied on a groove of a bank pattern formed using the first resist pattern film.

    摘要翻译： 本发明提供了能够消除图案化所需的光刻处理次数的图案薄膜，半导体元件和电路基板的制造方法; 以及通过制造方法得到的半导体元件，电路基板和电子元件。 本发明的图案薄膜的制造方法是图案薄膜的制造方法，包括以下工序：在形成于基板上的薄膜上形成第一抗蚀剂图案膜; 形成第二抗蚀剂图案膜; 使用至少第二抗蚀剂图案膜对薄膜进行图案化，其中在形成第二抗蚀剂图案膜的步骤中，将流体抗蚀剂材料或有机溶剂施加到使用第一抗蚀剂图案膜形成的堤形图案的凹槽上。

    SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体元件及其制造方法

    公开(公告)号：US20110101354A1

    公开(公告)日：2011-05-05

    申请号：US12864461

    申请日：2009-01-08

    申请人： Yuichi Saito ,  Masao Moriguchi ,  Akihiro Kohno

    发明人： Yuichi Saito ,  Masao Moriguchi ,  Akihiro Kohno

    IPC分类号： H01L33/16 ,  H01L21/336

    CPC分类号： H01L29/78669 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78678

    摘要： A semiconductor device 101 includes: a substrate 1; an active layer 4 provided on the substrate 1, the active layer 4 including a channel region 4c and a first region 4a and a second region 4b that are respectively located on opposite sides of the channel region 4c; a first contact layer 6a and a second contact layer 6b which are respectively in contact with the first region 4a and the second region 4b of the active layer 4; a first electrode 7 electrically coupled to the first region 4a via the first contact layer 6a; a second electrode 8 electrically coupled to the second region 4b via the second contact layer 6b; and a gate electrode 2 which is provided such that a gate insulating layer 3 is interposed between the gate electrode 2 and the active layer 4, the gate electrode 2 being configured to control a conductivity of the channel region 4c. The active layer 4 contains silicon. The semiconductor device further includes an oxygen-containing silicon layer 5 between the active layer 4 and the first and second contact layers 6a, 6b. The oxygen-containing silicon layer 5 contains oxygen at a concentration higher than the active layer 4 and the first and second contact layers 6a, 6b.

    摘要翻译： 半导体器件101包括：衬底1; 设置在基板1上的有源层4，有源层4包括分别位于沟道区域4c的相对侧上的沟道区域4c和第一区域4a和第二区域4b; 分别与有源层4的第一区域4a和第二区域4b接触的第一接触层6a和第二接触层6b; 经由第一接触层6a电耦合到第一区域4a的第一电极7; 经由第二接触层6b电耦合到第二区域4b的第二电极8; 栅极电极2被设置为使得栅极绝缘层3插入在栅极电极2和有源层4之间，栅电极2被配置为控制沟道区域4c的导电性。 有源层4含有硅。 半导体器件还包括有源层4和第一和第二接触层6a，6b之间的含氧硅层5。 含氧硅层5含有浓度高于有源层4和第一和第二接触层6a，6b的氧。

    Connector
    10.
    发明授权
    Connector 有权
    连接器

    公开(公告)号：US07731532B2

    公开(公告)日：2010-06-08

    申请号：US10585544

    申请日：2005-06-17

    申请人： Toshio Masumoto ,  Yuichi Saito

    发明人： Toshio Masumoto ,  Yuichi Saito

    IPC分类号： H01R13/648

    CPC分类号： H01R13/648 ,  H01R12/724 ,  H01R13/658 ,  H01R13/73 ,  H01R13/748

    摘要： A connector, comprising a connector body (11) having a flange (19), a shell (17) forming a contour part, and a reinforcement member (53). The reinforcement member (53) further comprises a reinforcement part (67) in contact with the flange (19) in which screw holes (57) are formed and an engagement part (65) engaged with the shell (17). The reinforcement member (53) is detachably fitted to the connector body (11).

    摘要翻译： 一种连接器，包括具有凸缘（19）的连接器主体（11），形成轮廓部分的壳体（17）和加强构件（53）。 加强构件（53）还包括与其中形成有螺纹孔（57）的凸缘（19）接触的加强部分（67）和与壳体（17）接合的接合部分（65）。 加强构件（53）可拆卸地装配到连接器主体（11）上。