公开(公告)号：US20120217547A1

公开(公告)日：2012-08-30

申请号：US13468373

申请日：2012-05-10

申请人： Yuji ANDO ,  Hironobu MIYAMOTO ,  Tatsuo NAKAYAMA ,  Yasuhiro OKAMOTO ,  Takashi INOUE ,  Yasuhiro MURASE ,  Kazuki OTA ,  Akio WAKEJIMA ,  Naotaka KURODA

发明人： Yuji ANDO ,  Hironobu MIYAMOTO ,  Tatsuo NAKAYAMA ,  Yasuhiro OKAMOTO ,  Takashi INOUE ,  Yasuhiro MURASE ,  Kazuki OTA ,  Akio WAKEJIMA ,  Naotaka KURODA

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/2003

摘要： Disclosed is an HJFET 110 which comprises: a channel layer 12 composed of InyGa1-yN (0≦y≦1); a carrier supply layer 13 composed of AlxGa1-xN (0≦x≦1), the carrier supply layer 13 being provided over the channel layer 12 and including at least one p-type layer; and a source electrode 15S, a drain electrode 15D and a gate electrode 17 which are disposed facing the channel layer 12 through the p-type layer, and provided over the carrier supply layer 13. The following relational expression is satisfied: 5.6×1011x

摘要翻译： 公开了一种HJFET 110，其包括：由In y Ga 1-y N（0＆lt; n 1; y＆n 1; 1）构成的沟道层12; 载体供给层13由Al x Ga 1-x N（0＆lt; n 1; x＆n 1; 1）组成，载流子供给层13设置在沟道层12上并且包括至少一个p型层; 以及源极电极15S，漏极电极15D和栅极电极17，其通过p型层面对沟道层12，并且设置在载流子供给层13上。满足以下关系式：5.6×10 11× NA×＆eegr×T [cm-2] <5.6×1013x，其中x表示所述载体供给层的Al组成比，t表示所述p型层的厚度，NA表示杂质浓度，＆eegr; 表示活化比。

公开(公告)号：US20130113028A2

公开(公告)日：2013-05-09

申请号：US13393002

申请日：2010-06-23

申请人： Hironobu MIYAMOTO ,  Yasuhiro OKAMOTO ,  Yuji ANDO ,  Tatsuo NAKAYAMA ,  Takashi INOUE ,  Kazuki OTA ,  Kazuomi ENDO

发明人： Hironobu MIYAMOTO ,  Yasuhiro OKAMOTO ,  Yuji ANDO ,  Tatsuo NAKAYAMA ,  Takashi INOUE ,  Kazuki OTA ,  Kazuomi ENDO

IPC分类号： H01L29/78

CPC分类号： H01L29/8122 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/7809 ,  H01L29/7812 ,  H01L29/7813 ,  H01L29/8128

摘要： A semiconductor device comprises a substrate 1, a first n-type semiconductor layer 21′, a second n-type semiconductor layer 23, a p-type semiconductor layer 24, and a third n-type semiconductor layer 25′, wherein the first n-type semiconductor layer 21′, the second n-type semiconductor layer 23, the p-type semiconductor layer 24, and the third n-type semiconductor layer 25′ are laminated at the upper side of the substrate 1 in this order. The drain electrode 13 is in ohmic-contact with the first n-type semiconductor layer 21′ and the source electrode 12 is in ohmic-contact with the third n-type semiconductor layer 25′. A gate electrode 14 is arranged so as to fill an opening portion to be filled that extends from the third n-type semiconductor layer 25′ to the second n-type semiconductor layer 23, and the gate electrode 14 is in contact with the upper surface of the second n-type semiconductor layer 23, the side surfaces of the p-type semiconductor layer 24, and the side surfaces of the third n-type semiconductor layer 25′. The second n-type semiconductor layer 23 has composition that changes from the drain electrode 13 side toward the source electrode 12 side in the direction perpendicular to the plane of the substrate 1 and contains donor impurity.

摘要翻译： 半导体器件包括衬底1，第一n型半导体层21'，第二n型半导体层23，p型半导体层24和第三n型半导体层25'，其中第一n型半导体层 型半导体层21'，第二n型半导体层23，p型半导体层24和第三n型半导体层25'依次层叠在基板1的上侧。 漏电极13与第一n型半导体层21'欧姆接触，源电极12与第三n型半导体层25'欧姆接触。 栅电极14被布置成填充从第三n型半导体层25'延伸到第二n型半导体层23的待填充的开口部分，并且栅电极14与上表面 第二n型半导体层23，p型半导体层24的侧表面和第三n型半导体层25'的侧表面。 第二n型半导体层23具有从垂直于基板1的平面的方向从漏电极13侧向源电极12侧变化的成分，并且含有施主杂质。

公开(公告)号：US20120270985A1

公开(公告)日：2012-10-25

申请号：US13448651

申请日：2012-04-17

申请人： Yuji ANDO ,  Motohiko Hirai

发明人： Yuji ANDO ,  Motohiko Hirai

IPC分类号： C08K5/053 ,  C08L83/06 ,  B82Y30/00

CPC分类号： A61K8/068 ,  A61K8/89 ,  A61Q19/00 ,  C08G77/14 ,  C08G77/46 ,  C08L83/12 ,  C08L83/00

摘要： A silicone microemulsion composition obtained by microemulsifying a carboxy-modified organopolysiloxane, and having a lower surface tension than conventional microemulsions. The composition includes 100 parts by mass of a specific carboxy-modified organopolysiloxane (A), 25 to 75 parts by mass of a specific polyether-modified organopolysiloxane (B), 0.1 to 10 parts by mass of an anionic surfactant, and 20 to 6,000 parts by mass of water, wherein the average particle size of the emulsion particles is not more than 100 nm.

摘要翻译： 通过微乳化羧基改性的有机聚硅氧烷并且具有比常规微乳液更低的表面张力获得的硅氧烷微乳液组合物。 该组合物包含100质量份特定的羧基改性的有机聚硅氧烷（A），25〜75质量份的特定的聚醚改性的有机聚硅氧烷（B），0.1〜10质量份的阴离子表面活性剂和20〜6,000 质量份的水，乳液颗粒的平均粒径不大于100nm。

公开(公告)号：US20120217505A1

公开(公告)日：2012-08-30

申请号：US13360589

申请日：2012-01-27

申请人： Yuji ANDO

发明人： Yuji ANDO

IPC分类号： H01L29/778

CPC分类号： H01L29/7786 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/7783 ,  H01L29/7787

摘要： A semiconductor device including a field effect transistor having a buffer layer subjected to lattice relaxation, a channel layer, and an electron supply layer formed in this order with group-III nitride semiconductors respectively in a growth mode parallel with a [0001] or [000-1] crystallographic axis over a substrate and having a source electrode and a drain electrode, those being coupled electrically to the channel layer, and a gate electrode formed over the electron supply layer, in which, in the buffer layer and the electron supply layer, a layer existing on the group-III atomic plane side of the channel layer has an A-axis length larger than a layer existing on the group-V atomic plane side of the channel layer; and the electron supply layer has a bandgap larger than the channel layer.

摘要翻译： 一种半导体器件，包括具有晶格弛豫缓冲层的场效应晶体管，沟道层以及与III族氮化物半导体分别以与[0001]或[000]平行的生长模式分别形成的电子供给层 -1]晶轴，并且具有源电极和漏电极，电极与沟道层电耦合的栅电极和形成在电子供应层上的栅极，其中在缓冲层和电子供给层中 存在于沟道层的III族原子平面侧的层的A轴长度比沟道层的V族原子面侧存在的层大; 并且电子供给层具有比沟道层大的带隙。