Capacitance position sensor and position controller equipped with the sensor
    1.
    发明授权
    Capacitance position sensor and position controller equipped with the sensor 失效
    电容位置传感器和位置控制器配有传感器

    公开(公告)号:US06861848B2

    公开(公告)日:2005-03-01

    申请号:US10279846

    申请日:2002-10-25

    CPC分类号: G01D5/24 G01D5/2417 H01S3/105

    摘要: A capacitance position sensor includes a pair of opposed tabular electrodes, an LC oscillator circuit having a toroidal core winding and whose oscillating frequency varies with change in capacitance between the pair of electrodes, and an arithmetic processing unit for calculating an absolute value of a distance between the electrodes from the oscillating frequency of the oscillator circuit. A position controller includes a stationary member formed with one electrode of the pair of electrodes of the position sensor, a movable member on which the other electrode of the pair of electrodes is formed, and moving device for moving the movable member relative to the stationary member.

    摘要翻译: 电容位置传感器包括一对相对的平板电极,具有环形铁芯绕组的振荡频率随着一对电极之间的电容变化而变化的LC振荡器电路,以及运算处理单元,用于计算在一对电极之间的距离的绝对值 电极从振荡电路的振荡频率。 位置控制器包括:固定构件,其形成有位置传感器的一对电极的一个电极,形成有该对电极的另一个电极的可动构件;以及用于使可动构件相对于固定构件移动的移动装置 。

    Method for designing mask pattern and method for manufacturing semiconductor device
    2.
    发明申请
    Method for designing mask pattern and method for manufacturing semiconductor device 审中-公开
    设计掩模图案的方法和制造半导体器件的方法

    公开(公告)号:US20080250383A1

    公开(公告)日:2008-10-09

    申请号:US11526820

    申请日:2006-09-26

    IPC分类号: G06F17/50

    摘要: A mask pattern designing method capable of achieving the reduction in the increasing OPC processing time, shortening the manufacture TAT of a semiconductor device, and achieving the cost reduction is provided. An OPC (optical proximity correction) process at the time when a cell is singularly arranged is performed to a cell library pattern which forms a basic structure of a semiconductor circuit pattern in advance, and a semiconductor chip is produced using the cell library pattern to which the OPC process has been performed. At this time, since the cell library pattern which has been OPC-processed in advance is influenced by the cell library patterns around it, the correction process thereof is performed to the end portions of the patterns near the cell boundary. As particularly effective OPC correction means, the genetic algorithm is used.

    摘要翻译: 提供了能够实现OPC处理时间的增加减少,缩短半导体器件的制造TAT以及实现成本降低的掩模图案设计方法。 对单元格单独排列时的OPC(光学邻近校正)处理进行预先对形成半导体电路图案的基本结构的单元库模式,并使用单元库模式生成半导体芯片, 已经执行了OPC过程。 此时,由于预先对其进行了OPC处理的单元库模式受其周围的单元库模式的影响,所以对单元边界附近的图案的端部进行修正处理。 作为特别有效的OPC校正手段,使用遗传算法。

    Region segmented image data creating system and feature extracting system for histopathological images
    3.
    发明授权
    Region segmented image data creating system and feature extracting system for histopathological images 有权
    区域分割图像数据创建系统和组织病理学图像的特征提取系统

    公开(公告)号:US09031294B2

    公开(公告)日:2015-05-12

    申请号:US13807135

    申请日:2011-07-22

    IPC分类号: G06K9/00 G06K9/46 G06T7/00

    摘要: A region segmented image data creating system for histopathological images is provided. The region segmented image data creating system is capable of creating region segmented image data required to generating a region segmented image. A first bi-level image data creating section 12 creates first bi-level image data, in which nucleus regions can be discriminated from other regions, from histopathological image data. A second bi-level image data creating section 14 creates second bi-level image data, in which a background regions can be discriminated from other regions, from the histopathological image data. A three-level image data creating section 15 clarifies cytoplasm regions by computing a negative logical addition of the first bi-level image data and the second bi-level image data, and to create three-level image data as the region segmented image data.

    摘要翻译: 提供了用于组织病理学图像的区域分割图像数据创建系统。 区域分割图像数据创建系统能够创建产生区域分割图像所需的区域分割图像数据。 第一双级图像数据创建部分12从组织病理学图像数据创建其中核区域可以与其他区域区分开的第一双层图像数据。 第二双级图像数据创建部分14从组织病理学图像数据创建其中背景区域可以与其他区域区分开的第二双层图像数据。 三级图像数据创建部分15通过计算第一双电平图像数据和第二双电平图像数据的负逻辑加法来澄清细胞质区域,并且创建三电平图像数据作为区域分割图像数据。

    REGION SEGMENTED IMAGE DATA CREATING SYSTEM AND FEATURE EXTRACTING SYSTEM FOR HISTOPATHOLOGICAL IMAGES
    4.
    发明申请
    REGION SEGMENTED IMAGE DATA CREATING SYSTEM AND FEATURE EXTRACTING SYSTEM FOR HISTOPATHOLOGICAL IMAGES 有权
    区域分割图像数据创建系统和特征提取系统用于组织病理学图像

    公开(公告)号:US20130094733A1

    公开(公告)日:2013-04-18

    申请号:US13807135

    申请日:2011-07-22

    IPC分类号: G06K9/46

    摘要: A region segmented image data creating system for histopathological images is provided. The region segmented image data creating system is capable of creating region segmented image data required to generating a region segmented image. A first bi-level image data creating section 12 creates first bi-level image data, in which nucleus regions can be discriminated from other regions, from histopathological image data. A second bi-level image data creating section 14 creates second bi-level image data, in which a background regions can be discriminated from other regions, from the histopathological image data. A three-level image data creating section 15 clarifies cytoplasm regions by computing a negative logical addition of the first bi-level image data and the second bi-level image data, and to create three-level image data as the region segmented image data.

    摘要翻译: 提供了用于组织病理学图像的区域分割图像数据创建系统。 区域分割图像数据创建系统能够创建产生区域分割图像所需的区域分割图像数据。 第一双级图像数据创建部分12从组织病理学图像数据创建其中核区域可以与其他区域区分开的第一双层图像数据。 第二双级图像数据创建部分14从组织病理学图像数据创建其中背景区域可以与其他区域区分开的第二双层图像数据。 三级图像数据创建部分15通过计算第一双电平图像数据和第二双电平图像数据的负逻辑加法来澄清细胞质区域,并且创建三电平图像数据作为区域分割图像数据。

    Mask Pattern Designing Method Using Optical Proximity Correction in Optical Lithography, Designing Device, and Semiconductor Device Manufacturing Method Using the Same
    5.
    发明申请
    Mask Pattern Designing Method Using Optical Proximity Correction in Optical Lithography, Designing Device, and Semiconductor Device Manufacturing Method Using the Same 审中-公开
    光学平版印刷中的光学接近校正的掩模图案设计方法,设计装置和使用其的半导体器件制造方法

    公开(公告)号:US20080276215A1

    公开(公告)日:2008-11-06

    申请号:US11910049

    申请日:2006-03-28

    IPC分类号: G06F17/50

    摘要: A method for designing a mask pattern realizes shortening the ever-growing time for the OPC treatment, decreases the fabrication TAT of a semiconductor device and cuts cost. A method for fabricating a semiconductor device uses the mask pattern designed. This invention performs the OPC treatment in advance on a cell library constituting the basic configuration of a semiconductor circuit pattern and prepares a semiconductor chip using the cell library that has undergone the OPC treatment. The method for designing a mask pattern includes the steps of designing a cell library pattern by executing for each of the cell libraries a treatment for correcting proximity effect directed to correcting the change of shape taking place during the formation of a pattern by the exposure of a mask pattern, designing a mask pattern by laying out the cell libraries and changing the amount of correction of proximity effect applied to the cell libraries in consideration of the influence of the cell library patterns disposed peripherally. This treatment for correction is executed by the degree of influence exerted by surrounding patterns collected in advance and the genetic algorithm.

    摘要翻译: 用于设计掩模图案的方法实现缩短OPC处理的不断增长的时间,减少半导体器件的制造TAT并降低成本。 半导体器件的制造方法使用设计的掩模图案。 本发明预先在构成半导体电路图案的基本结构的单元库中进行OPC处理,并且使用已经经过OPC处理的单元库来制备半导体芯片。 用于设计掩模图案的方法包括以下步骤:通过针对每个单元库执行用于修正邻近效应的处理的设计单元库模式的步骤,所述处理用于校正在形成模式期间发生的形状变化 掩模图案,考虑到周边设置的细胞库图案的影响,通过铺设细胞库并改变施加到细胞库的邻近效应的校正量来设计掩模图案。 这种校正处理是通过预先收集的周围图案和遗传算法的影响程度来执行的。

    Method for designing mask pattern and method for manufacturing semiconductor device
    6.
    发明申请
    Method for designing mask pattern and method for manufacturing semiconductor device 审中-公开
    设计掩模图案的方法和制造半导体器件的方法

    公开(公告)号:US20070074146A1

    公开(公告)日:2007-03-29

    申请号:US11526783

    申请日:2006-09-26

    IPC分类号: G06F17/50

    CPC分类号: G03F1/36

    摘要: A semiconductor chip is manufactured using a cell library pattern obtained by performing OPC (optical proximity correction) process at the time of a cell single arrangement to a cell library pattern which forms a basic structure of a semiconductor circuit pattern in advance. A plurality of cell libraries are arranged to design a mask pattern and a correction amount of OPC performed to the cell libraries is changed with taking into account the influence of a pattern of cell libraries arranged around a target cell. Further, a cell group with the same arrangement of surrounding cells including the target cell is extracted and is registered as a cell set, and a cell set with the same cell arrangement as that of the registered cell set is produced by copying without re-calculating OPC inside the cell set.

    摘要翻译: 使用通过在单元格单元配置时对预先形成半导体电路图案的基本结构的单元库图案执行OPC(光学邻近校正)处理而获得的单元库模式来制造半导体芯片。 布置多个单元库以设计掩模图案,并且考虑到布置在目标单元周围的单元库的图案的影响,改变对单元库执行的OPC的校正量。 此外,提取具有包括目标单元的周围单元的相同排列的单元组,并将其注册为单元组,并且通过复制产生具有与注册单元组相同单元布置的单元组,而不重新计算 OPC内部的单元格集。