Photovoltaic device
    2.
    发明授权
    Photovoltaic device 失效
    光电器件

    公开(公告)号:US5114498A

    公开(公告)日:1992-05-19

    申请号:US502837

    申请日:1990-03-30

    摘要: A photovoltaic device includes a substrate (1, 10) having a conductive electrode (2, 10), and a first semiconductor layer (3.sub.1, 11.sub.1) of a first conductivity type, a substantially intrinsic second semiconductor layer (3.sub.2, 11.sub.2) and a third semiconductor layer (3.sub.3, 11.sub.3) of the opposite conductivity type successively deposited on the conductive electrode. The hydrogen content in at least the first and second semiconductor layer (3.sub.1, 11.sub.1) is 10% or less. At least the second semiconductor layer (3.sub.2, 11.sub.2), is made of an amorphous semiconductor layer.

    摘要翻译: 光电器件包括具有导电电极(2,10)的衬底(1,10)和第一导电类型的第一半导体层(31,111),基本上本征的第二半导体层(32,112)和 连续地沉积在导电电极上的相反导电类型的第三半导体层(33,113)。 至少第一和第二半导体层(31,111)中的氢含量为10%以下。 至少第二半导体层(32,112)由非晶半导体层制成。