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    Method of fabricating semiconductor light-emitting devices with isolation trenches
    4.
    发明授权
    Method of fabricating semiconductor light-emitting devices with isolation trenches 失效
    制造具有隔离沟槽的半导体发光器件的方法

    公开(公告)号：US07754512B2

    公开(公告)日：2010-07-13

    申请号：US11119805

    申请日：2005-05-03

    申请人： Masumi Taninaka ,  Hiroyuki Fujiwara ,  Susumu Ozawa ,  Masaharu Nobori

    发明人： Masumi Taninaka ,  Hiroyuki Fujiwara ,  Susumu Ozawa ,  Masaharu Nobori

    IPC分类号： H01L33/00 ,  H01L21/00 ,  H01L33/08

    CPC分类号： B41J2/45 ,  H01L27/153

    摘要： According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a single band-shaped diffusion region, then forming trenches that divide the diffusion region into multiple regions, or by forming individual diffusion regions and then forming trenches between them. The trenches prevent overlap between adjacent light-emitting elements, regardless of their junction depth, enabling a high-density array to be fabricated while maintaining adequate junction depth.

    摘要翻译： 根据本发明，发光半导体器件具有通过隔离沟槽分离的发光元件，优选在每个发光元件的两侧。 该器件可以通过形成单个带状扩散区域，然后形成将扩散区域分成多个区域的沟槽，或者通过形成各个扩散区域，然后在它们之间形成沟槽来制造。 沟槽防止相邻发光元件之间的重叠，而不管它们的结深度如何，使得能够制造高密度阵列同时保持足够的结深度。

    Array of semiconductor elements with paired driving scheme
    5.
    发明授权
    Array of semiconductor elements with paired driving scheme 有权
    具有配对驱动方案的半导体元件阵列

    公开(公告)号：US06765235B2

    公开(公告)日：2004-07-20

    申请号：US10373404

    申请日：2003-02-25

    申请人： Masumi Taninaka ,  Hiroyuki Fujiwara ,  Hiroshi Hamano ,  Masaharu Nobori

    发明人： Masumi Taninaka ,  Hiroyuki Fujiwara ,  Hiroshi Hamano ,  Masaharu Nobori

    IPC分类号： H01L3300

    CPC分类号： H01L27/153 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device has a substantially linear array of semiconductor blocks of one conductive type, each includes a diffusion region of the opposite conductive type and a electrode. The array is paralleled by an array of electrode pads, each connected to two semiconductor blocks, being connected to the diffusion region in one of the two semiconductor blocks and to the electrode in the other one of the two semiconductor blocks. The electrode pad can thus activate both semiconductor blocks, activating one semiconductor block when placed at one potential, and activating the other semiconductor block when placed at another potential. Efficient driving with a comparatively small number of electrode pads thus becomes possible.

    摘要翻译： 半导体器件具有一个导电类型的半导体块的基本线性阵列，每个包括相反导电类型的扩散区域和电极。 该阵列由一组电极焊盘并联，每个电极焊盘连接到两个半导体块，连接到两个半导体块之一中的扩散区域和两个半导体块中的另一个中的电极。 因此，电极焊盘可以激活两个半导体块，当放置在一个电位时激活一个半导体块，并且当放置在另一个电位时激活另一个半导体块。 因此，可以用相对较少数量的电极垫进行有效驱动。

    Semiconductor light-emitting device with isolation trenches, and method of fabricating same
    7.
    发明授权
    Semiconductor light-emitting device with isolation trenches, and method of fabricating same 有权
    具有隔离沟槽的半导体发光器件及其制造方法

    公开(公告)号：US06909122B2

    公开(公告)日：2005-06-21

    申请号：US10374081

    申请日：2003-02-27

    申请人： Masumi Taninaka ,  Hiroyuki Fujiwara ,  Susumu Ozawa ,  Masaharu Nobori

    发明人： Masumi Taninaka ,  Hiroyuki Fujiwara ,  Susumu Ozawa ,  Masaharu Nobori

    IPC分类号： H01L21/764 ,  H01L21/76 ,  H01L27/15 ,  H01L33/08 ,  H01L33/30 ,  H01L29/207

    CPC分类号： B41J2/45 ,  H01L27/153

    摘要： According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a single band-shaped diffusion region, then forming trenches that divide the diffusion region into multiple regions, or by forming individual diffusion regions and then forming trenches between them. The trenches prevent overlap between adjacent light-emitting elements, regardless of their junction depth, enabling a high-density array to be fabricated while maintaining adequate junction depth.

    摘要翻译： 根据本发明，发光半导体器件具有通过隔离沟槽分离的发光元件，优选在每个发光元件的两侧。 该器件可以通过形成单个带状扩散区域，然后形成将扩散区域分成多个区域的沟槽，或者通过形成各个扩散区域，然后在它们之间形成沟槽来制造。 沟槽防止相邻发光元件之间的重叠，而不管它们的结深度如何，使得能够制造高密度阵列同时保持足够的结深度。

    Semiconductor array device with single interconnection layer
    8.
    发明授权
    Semiconductor array device with single interconnection layer 有权

    公开(公告)号：US06781246B2

    公开(公告)日：2004-08-24

    申请号：US10631893

    申请日：2003-08-01

    申请人： Hiroyuki Fujiwara ,  Masumi Taninaka ,  Susumu Ozawa ,  Masumi Koizumi

    发明人： Hiroyuki Fujiwara ,  Masumi Taninaka ,  Susumu Ozawa ,  Masumi Koizumi

    IPC分类号： H01L2348

    CPC分类号： B41J2/45 ,  H01L27/153 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An array of semiconductor circuit elements such as light-emitting elements includes a semiconductor layer partially covered by a dielectric film. A first interconnecting pad such as a wire-bonding pad is electrically coupled by conductive paths passing through the semiconductor layer to electrodes of a first group of semiconductor circuit elements formed in the semiconductor layer. A second interconnecting pad such as a wire-bonding pad, formed on the dielectric film, is electrically coupled to electrodes of a second group of semiconductor circuit elements formed in the semiconductor layer by conductive paths insulated from the semiconductor layer by the dielectric film. The second conductive paths cross the first conductive paths at points at which the first conductive paths pass through the semiconductor layer, so that only a single layer of metal interconnecting lines is needed.

    Opto-electronic device with self-aligned ohmic contact layer
    9.
    发明授权
    Opto-electronic device with self-aligned ohmic contact layer 有权
    具有自对准欧姆接触层的光电器件

    公开(公告)号：US06541796B2

    公开(公告)日：2003-04-01

    申请号：US09933341

    申请日：2001-08-20

    申请人： Masaharu Nobori ,  Hiroyuki Fujiwara ,  Masumi Koizumi

    发明人： Masaharu Nobori ,  Hiroyuki Fujiwara ,  Masumi Koizumi

    IPC分类号： H01L2715

    CPC分类号： H01L33/40 ,  H01L21/2258 ,  H01L21/28575 ,  H01L33/005 ,  H01L33/38

    摘要： An opto-electronic device has a diffusion area of one conductive type formed in a semiconductor substrate of another conductive type, an ohmic contact layer making contact with the diffusion area, and an electrode making contact with the ohmic contact layer. The diffusion area is formed by solid-phase diffusion. The same mask is used to define the patterns of both the diffusion source layer and the ohmic contact layer, so that the ohmic contact layer is self-aligned with the diffusion area.

    摘要翻译： 光电器件具有形成在另一导电类型的半导体衬底中的一种导电类型的扩散区域，与扩散区域接触的欧姆接触层，以及与欧姆接触层接触的电极。 扩散区域由固相扩散形成。 使用相同的掩模来限定扩散源层和欧姆接触层的图案，使得欧姆接触层与扩散区域自对准。

    Opto-electronic device with self-aligned ohmic contact layer
    10.
    发明授权
    Opto-electronic device with self-aligned ohmic contact layer 有权
    具有自对准欧姆接触层的光电器件

    公开(公告)号：US06291328B1

    公开(公告)日：2001-09-18

    申请号：US09562340

    申请日：2000-05-01

    申请人： Masaharu Nobori ,  Hiroyuki Fujiwara ,  Masumi Koizumi

    发明人： Masaharu Nobori ,  Hiroyuki Fujiwara ,  Masumi Koizumi

    IPC分类号： H01L2122

    CPC分类号： H01L33/40 ,  H01L21/2258 ,  H01L21/28575 ,  H01L33/005 ,  H01L33/38

    摘要： An opto-electronic device has a diffusion area of one conductive type formed in a semiconductor substrate of another conductive type, an ohmic contact layer making contact with the diffusion area, and an electrode making contact with the ohmic contact layer. The diffusion area is formed by solid-phase diffusion. The same mask is used to define the patterns of both the diffusion source layer and the ohmic contact layer, so that the ohmic contact layer is self-aligned with the diffusion area.

    摘要翻译： 光电器件具有形成在另一导电类型的半导体衬底中的一种导电类型的扩散区域，与扩散区域接触的欧姆接触层，以及与欧姆接触层接触的电极。 扩散区域由固相扩散形成。 使用相同的掩模来限定扩散源层和欧姆接触层的图案，使得欧姆接触层与扩散区域自对准。