摘要:
A processing machine has a main spindle apparatus and a tool holder which clamps a working tool. The main spindle apparatus detachably supports the tool holder and rotates. Oil mist is transported to the working tool through a lubricant supplying pipe in the main spindle apparatus. A coolant hose is formed in the tool holder. A supporting member is composed mainly of a sleeve and a draw bar. The supporting member air-tightly supports the coolant hose of the tool holder. A ring-shaped packing is placed between the lubricant supplying pipe and the supporting member in order to prevent any leakage of the oil mist. The periphery of the packing has two divided sub-parts of a character “Y” shape. The leaking oil mist expands one sub-part of the packing to air-tightly seal the gap formed between the lubricant supplying pipe and the draw bar.
摘要:
A cutting tool for processing a nonferrous metal member by rotation has a body portion and a cutting edge arranged at the body portion. The body portion has a coolant supply hole through which a coolant is supplied for the nonferrous metal member in processing, and a chip evacuation groove which has a substantially helical shape and through which chip of the nonferrous metal member generated in the processing is expelled. The cutting edge is made of diamond grains and a binder material. An opening of the coolant supply hole is arranged at the cutting edge.
摘要:
A cutting tool is provided to process a processed member having an opening portion with a curved inner surface, so that a through hole is formed and a part of the inner surface of the opening portion corresponding to the through hole is processed. The through hole extends from a surface of the processed member to reach the opening portion. The cutting tool includes a shank member, and a processing member having a smaller diameter than the shank member. A groove portion of the processing member has a cutting edge, and a chip evacuation groove through which chip is expelled outward. A self guide portion of the processing member is arranged between the groove portion and the shank member and provided with a substantially cylindrical shape, to guide the cutting edge toward the part of the inner surface of the opening portion corresponding to the through hole in the processing.
摘要:
A cutting tool is provided to process a processed member having an opening portion with a curved inner surface, so that a through hole is formed and a part of the inner surface of the opening portion corresponding to the through hole is processed. The through hole extends from a surface of the processed member to reach the opening portion. The cutting tool includes a shank member, and a processing member having a smaller diameter than the shank member. A groove portion of the processing member has a cutting edge, and a chip evacuation groove through which chip is expelled outward. A self guide portion of the processing member is arranged between the groove portion and the shank member and provided with a substantially cylindrical shape, to guide the cutting edge toward the part of the inner surface of the opening portion corresponding to the through hole in the processing.
摘要:
The present invention is to provide a medical tissue-marker which enables the identification of a location even from the outside of an organ, can remain topical over a long period, and enables the easy identification of a marked location within the whole organ; also to provide a manufacturing method for the medical tissue-marker. The medical tissue-marker as in the present invention includes a vesicle formed by the synthesis of a phospholipid and a near infrared fluorescent dye, and an emulsion formed by the synthesis of the phospholipid and an X-ray contrast medium, and has agglomerated clusters wherein the vesicle and the emulsion are contained in a hydrophilic solvent and a plurality of capsules are formed by means of an emulsifier.
摘要:
First, second, fourth, and fifth impurity regions have a first conductivity type, and a third impurity region has a second conductivity type. The first to third impurity regions reach a first layer having the first conductivity type. The fourth and fifth impurity regions are provided on a second layer. First to fifth electrodes are provided on the first to fifth impurity regions, respectively. Electrical connection is established between the first and fifth electrodes, and between the third and fourth electrodes. A sixth electrode is provided on a gate insulating film covering a portion between the fourth and fifth impurity regions.
摘要:
A semiconductor device is designed to facilitate analyzing a position and a cause of the failure of an integrated circuit adopting a polyphase clock. To this end, the semiconductor device is provided with an error detecting unit that detects that a problem of the operation occurs in the integrated circuit, a clock state holding unit that holds the information of phases in a predetermined term of a two- or more-phase clock and an output unit that outputs the information of the phases in the predetermined term of the two- or more-phase clock when the error detecting unit detects that the problem of the operation occurs in the integrated circuit.
摘要:
A current detection unit detects an electric current caused by superimposing a direct current from a direct-current power source on an alternating current from an alternating-current power source and supplied through a brush to a direct-current motor. An extracting unit extracts an alternating-current component of the detected electric current. An angle detection unit detects a rotation angle of the motor according to the extracted alternating-current component. A direction detection unit detects a rotative direction of the motor according to a change pattern of the extracted alternating-current component. A core of the motor has slots each defined between adjacent two of teeth. The slots respectively accommodate phase coils respectively wound around the teeth. Turns of the phase coils are different from each other.
摘要:
A through portion is formed on a semiconductor substrate. Into the semiconductor substrate, a first ion implantation is performed via the through portion. The through portion is at least partially removed in the thickness direction from a region of at least a portion of the through portion when viewed in a plan view. A second ion implantation is performed into the semiconductor substrate at the region of at least the portion thereof. An implantation energy for the first ion implantation is equal to an implantation energy for the second ion implantation.