公开(公告)号：US20120132801A1

公开(公告)日：2012-05-31

申请号：US13366874

申请日：2012-02-06

申请人： Yuko IWABUCHI ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

发明人： Yuko IWABUCHI ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

IPC分类号： H01J37/28

CPC分类号： H01J37/28 ,  G01N23/20 ,  G01N23/2251 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/04 ,  H01J37/20 ,  H01J37/265 ,  H01J2237/04756 ,  H01J2237/20221 ,  H01J2237/2444 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/31766

摘要： Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

摘要翻译： 通过提供新颖的检查方法和采用这种新方法的检测装置，本发明通过使用电子束的本发明解决了常规检查方法中遇到的问题和采用该方法的传统装置，该方法能够提高扫描样本的速度 作为半导体晶片。 本发明提供的检验新颖方法包括以下步骤：产生电子束; 通过使用物镜将生成的电子束会聚在样品上; 使用会聚电子束扫描样品; 扫描期间连续移动样品; 检测在样本和物镜之间的位置处从样本发出的带电粒子，并将检测到的带电粒子转换成电信号; 存储由电信号传送的图像信息; 通过使用所存储的图像信息将图像与另一图像进行比较; 并检测样本的缺陷。

公开(公告)号：US07439506B2

公开(公告)日：2008-10-21

申请号：US11798239

申请日：2007-05-11

申请人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

发明人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

IPC分类号： H01J37/256 ,  H01J37/244

CPC分类号： H01J37/28 ,  G01N23/20 ,  G01N23/2251 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/04 ,  H01J37/20 ,  H01J37/265 ,  H01J2237/04756 ,  H01J2237/20221 ,  H01J2237/2444 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/31766

摘要： Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

摘要翻译： 通过提供新颖的检查方法和采用这种新方法的检测装置，本发明通过使用电子束的本发明解决了常规检查方法中遇到的问题和采用该方法的传统装置，该方法能够提高扫描样本的速度 作为半导体晶片。 本发明提供的检验新颖方法包括以下步骤：产生电子束; 通过使用物镜将生成的电子束会聚在样品上; 使用会聚电子束扫描样品; 扫描期间连续移动样品; 检测在样本和物镜之间的位置处从样本发出的带电粒子，并将检测到的带电粒子转换成电信号; 存储由电信号传送的图像信息; 通过使用所存储的图像信息将图像与另一图像进行比较; 并检测样本的缺陷。

公开(公告)号：US20090057556A1

公开(公告)日：2009-03-05

申请号：US12211343

申请日：2008-09-16

申请人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

发明人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

IPC分类号： G01N23/00

CPC分类号： H01J37/28 ,  G01N23/20 ,  G01N23/2251 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/04 ,  H01J37/20 ,  H01J37/265 ,  H01J2237/04756 ,  H01J2237/20221 ,  H01J2237/2444 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/31766

摘要： Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

摘要翻译： 通过提供新颖的检查方法和采用这种新方法的检测装置，本发明通过使用电子束的本发明解决了常规检查方法中遇到的问题和采用该方法的传统装置，该方法能够提高扫描样本的速度 作为半导体晶片。 本发明提供的检验新颖方法包括以下步骤：产生电子束; 通过使用物镜将生成的电子束会聚在样品上; 使用会聚电子束扫描样品; 扫描期间连续移动样品; 检测在样本和物镜之间的位置处从样本发出的带电粒子，并将检测到的带电粒子转换成电信号; 存储由电信号传送的图像信息; 通过使用存储的图像信息将图像与另一图像进行比较; 并检测样本的缺陷。

公开(公告)号：US06987265B2

公开(公告)日：2006-01-17

申请号：US10083481

申请日：2002-02-27

申请人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

发明人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

IPC分类号： H01J37/28

CPC分类号： H01J37/28 ,  G01N23/20 ,  G01N23/2251 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/04 ,  H01J37/20 ,  H01J37/265 ,  H01J2237/04756 ,  H01J2237/20221 ,  H01J2237/2444 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/31766

摘要： Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

公开(公告)号：US06512227B2

公开(公告)日：2003-01-28

申请号：US09982965

申请日：2001-10-22

申请人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Atsuko Takafuji ,  Hiroshi Toyama ,  Katsuya Sugiyama

发明人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Atsuko Takafuji ,  Hiroshi Toyama ,  Katsuya Sugiyama

IPC分类号： G01N2300

CPC分类号： H01J37/28 ,  G01N23/04 ,  H01J2237/2817

摘要： An object of the present invention is to provide an inspection method using an electron beam and an inspection apparatus therefor, which are capable of enhancing the resolution, improving the inspection speed and reliability, and realizing miniaturization the apparatus. To achieve the above object, according to the present invention, there is provided an inspection method using an electron beam, including the steps of; applying a voltage on a sample via a sample stage; converging an electron beam on the sample; scanning the sample with the converged electron beam and simultaneously, continuously moving the sample stage; detecting charged particles generated from the sample; and detecting a defect on the sample on the basis of the detected charged particles; wherein a distance between the sample and the shield frame is determined on the basis of a critical discharge between the sample stage and the shield frame; coils of at least hexapoles for correcting the shape of an electron beam are provided; the electron beam is deflected for blanking during movement of the sample with the crossover of the electron beam taken as a fulcrum of blanking; or the magnitude of the voltage applied to the sample may be determined depending on the kind of sample.

公开(公告)号：US08604430B2

公开(公告)日：2013-12-10

申请号：US13366874

申请日：2012-02-06

申请人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

发明人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

IPC分类号： H01J37/28

CPC分类号： H01J37/28 ,  G01N23/20 ,  G01N23/2251 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/04 ,  H01J37/20 ,  H01J37/265 ,  H01J2237/04756 ,  H01J2237/20221 ,  H01J2237/2444 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/31766

摘要： The inspection apparatus disclosed generates an electron beam, an acceleration electrode accelerates the electron beam, a convergence lens converges the electron beam, an electron beam deflector scans the beam over a sample, an objective lens converges the electron beam on the sample, a detector located between the sample and the objective lens detects charged particles emitted from the sample, a power supply applies a retarding voltage to the sample for decelerating the electron beam to the sample, an electrode is disposed between the objective lens and the sample, and a voltage is generated between the sample and the electrode by said electrode, the voltage being determined depending on the sample. The apparatus solves problems encountered in conventional inspection systems.

摘要翻译： 所公开的检查装置产生电子束，加速电极加速电子束，会聚透镜会聚电子束，电子束偏转器扫描样品上的光束，物镜会将电子束会聚在样品上，检测器位于 在样品和物镜之间检测从样品发射的带电粒子，电源向样品施加延迟电压以将电子束减速到样品，电极设置在物镜和样品之间，电压为 通过所述电极在样品和电极之间产生，电压根据样品确定。 该装置解决了常规检测系统遇到的问题。

公开(公告)号：US07012252B2

公开(公告)日：2006-03-14

申请号：US11108877

申请日：2005-04-19

申请人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

发明人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

IPC分类号： H01J37/28

CPC分类号： H01J37/28 ,  G01N23/20 ,  G01N23/2251 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/04 ,  H01J37/20 ,  H01J37/265 ,  H01J2237/04756 ,  H01J2237/20221 ,  H01J2237/2444 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/31766

摘要： Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

公开(公告)号：US08134125B2

公开(公告)日：2012-03-13

申请号：US12211343

申请日：2008-09-16

申请人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

发明人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

IPC分类号： H01J37/28

CPC分类号： H01J37/28 ,  G01N23/20 ,  G01N23/2251 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/04 ,  H01J37/20 ,  H01J37/265 ,  H01J2237/04756 ,  H01J2237/20221 ,  H01J2237/2444 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/31766

摘要： Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

摘要翻译： 通过提供新颖的检查方法和采用这种新方法的检测装置，本发明通过使用电子束的本发明解决了常规检查方法中遇到的问题和采用该方法的传统装置，该方法能够提高扫描样本的速度 作为半导体晶片。 本发明提供的检验新颖方法包括以下步骤：产生电子束; 通过使用物镜将生成的电子束会聚在样品上; 使用会聚电子束扫描样品; 扫描期间连续移动样品; 检测在样本和物镜之间的位置处从样本发出的带电粒子，并将检测到的带电粒子转换成电信号; 存储由电信号传送的图像信息; 通过使用所存储的图像信息将图像与另一图像进行比较; 并检测样本的缺陷。

公开(公告)号：US20070215803A1

公开(公告)日：2007-09-20

申请号：US11798239

申请日：2007-05-11

申请人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

发明人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

IPC分类号： G01N23/00

CPC分类号： H01J37/28 ,  G01N23/20 ,  G01N23/2251 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/04 ,  H01J37/20 ,  H01J37/265 ,  H01J2237/04756 ,  H01J2237/20221 ,  H01J2237/2444 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/31766

摘要： Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

公开(公告)号：US20060151699A1

公开(公告)日：2006-07-13

申请号：US11319279

申请日：2005-12-29

申请人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

发明人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

IPC分类号： G21K7/00

CPC分类号： H01J37/28 ,  G01N23/20 ,  G01N23/2251 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/04 ,  H01J37/20 ,  H01J37/265 ,  H01J2237/04756 ,  H01J2237/20221 ,  H01J2237/2444 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/31766

摘要： Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.