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1.
公开(公告)号:US08134125B2
公开(公告)日:2012-03-13
申请号:US12211343
申请日:2008-09-16
申请人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
发明人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
IPC分类号: H01J37/28
CPC分类号: H01J37/28 , G01N23/20 , G01N23/2251 , G03F7/7065 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01J37/04 , H01J37/20 , H01J37/265 , H01J2237/04756 , H01J2237/20221 , H01J2237/2444 , H01J2237/24592 , H01J2237/2817 , H01J2237/31766
摘要: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
摘要翻译: 通过提供新颖的检查方法和采用这种新方法的检测装置,本发明通过使用电子束的本发明解决了常规检查方法中遇到的问题和采用该方法的传统装置,该方法能够提高扫描样本的速度 作为半导体晶片。 本发明提供的检验新颖方法包括以下步骤:产生电子束; 通过使用物镜将生成的电子束会聚在样品上; 使用会聚电子束扫描样品; 扫描期间连续移动样品; 检测在样本和物镜之间的位置处从样本发出的带电粒子,并将检测到的带电粒子转换成电信号; 存储由电信号传送的图像信息; 通过使用所存储的图像信息将图像与另一图像进行比较; 并检测样本的缺陷。
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公开(公告)号:US20080302964A1
公开(公告)日:2008-12-11
申请号:US12190388
申请日:2008-08-12
申请人: Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
发明人: Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
IPC分类号: G01N23/00 , G01R31/305
CPC分类号: G01R31/305 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要翻译: 电路图案检查方法及其装置,其中待检查的样品的待检查部分的整体部分处于预定的改变状态,被检查的部分用成像高分辨率照射, 在扫描电子束时,在从电子束照射的时刻起经过规定的时间后,在照射电子束的部分检测到二次带电粒子,根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号,并检查待检查的部分。
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公开(公告)号:US20070215803A1
公开(公告)日:2007-09-20
申请号:US11798239
申请日:2007-05-11
申请人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
发明人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
IPC分类号: G01N23/00
CPC分类号: H01J37/28 , G01N23/20 , G01N23/2251 , G03F7/7065 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01J37/04 , H01J37/20 , H01J37/265 , H01J2237/04756 , H01J2237/20221 , H01J2237/2444 , H01J2237/24592 , H01J2237/2817 , H01J2237/31766
摘要: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
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公开(公告)号:US20060151699A1
公开(公告)日:2006-07-13
申请号:US11319279
申请日:2005-12-29
申请人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
发明人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
IPC分类号: G21K7/00
CPC分类号: H01J37/28 , G01N23/20 , G01N23/2251 , G03F7/7065 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01J37/04 , H01J37/20 , H01J37/265 , H01J2237/04756 , H01J2237/20221 , H01J2237/2444 , H01J2237/24592 , H01J2237/2817 , H01J2237/31766
摘要: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
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5.
公开(公告)号:US20050205782A1
公开(公告)日:2005-09-22
申请号:US11108877
申请日:2005-04-19
申请人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
发明人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
IPC分类号: G01Q30/02 , G01N23/00 , G01N23/20 , G01N23/225 , G21K1/08 , G21K7/00 , H01J37/22 , H01J37/244 , H01J37/256 , H01J37/28 , H01L21/66
CPC分类号: H01J37/28 , G01N23/20 , G01N23/2251 , G03F7/7065 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01J37/04 , H01J37/20 , H01J37/265 , H01J2237/04756 , H01J2237/20221 , H01J2237/2444 , H01J2237/24592 , H01J2237/2817 , H01J2237/31766
摘要: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
摘要翻译: 通过提供新颖的检查方法和采用这种新方法的检测装置,本发明通过使用电子束的本发明解决了常规检查方法中遇到的问题和采用该方法的传统装置,该方法能够提高扫描样本的速度 作为半导体晶片。 本发明提供的检验新颖方法包括以下步骤:产生电子束; 通过使用物镜将生成的电子束会聚在样品上; 使用会聚电子束扫描样品; 扫描期间连续移动样品; 检测在样本和物镜之间的位置处从样本发出的带电粒子,并将检测到的带电粒子转换成电信号; 存储由电信号传送的图像信息; 通过使用所存储的图像信息将图像与另一图像进行比较; 并检测样本的缺陷。
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公开(公告)号:US06797954B2
公开(公告)日:2004-09-28
申请号:US10400588
申请日:2003-03-28
申请人: Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人: Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号: H01J37244
CPC分类号: H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要: An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
摘要翻译: 具有固定面积的电子束(区域光束)被照射到半导体样品的表面上,并且通过成像透镜对来自样品表面的反射电子进行成像,并且半导体样品的表面的多个区域的图像是 获取并存储在图像存储单元中,并且将多个区域的存储图像相互比较,并且测量区域和缺陷位置中的缺陷的存在。 通过这样做,在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷,异物和晶片上的残留物的装置可以实现测试的加速。
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7.
公开(公告)号:US06452178B2
公开(公告)日:2002-09-17
申请号:US09883184
申请日:2001-06-19
申请人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
发明人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
IPC分类号: H01J3728
CPC分类号: H01J37/28 , G01N23/20 , G01N23/2251 , G03F7/7065 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01J37/04 , H01J37/20 , H01J37/265 , H01J2237/04756 , H01J2237/20221 , H01J2237/2444 , H01J2237/24592 , H01J2237/2817 , H01J2237/31766
摘要: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
摘要翻译: 通过提供新颖的检查方法和采用这种新方法的检测装置,本发明通过使用电子束的本发明解决了常规检查方法中遇到的问题和采用该方法的传统装置,该方法能够提高扫描样本的速度 作为半导体晶片。本发明提供的检测新颖方法包括以下步骤:产生电子束; 通过使用物镜将生成的电子束会聚在样品上; 使用会聚电子束扫描样品; 扫描期间连续移动样品; 检测在样本和物镜之间的位置处从样本发出的带电粒子,并将检测到的带电粒子转换成电信号; 存储由电信号传送的图像信息; 通过使用所存储的图像信息将图像与另一图像进行比较; 并检测样本的缺陷。
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8.
公开(公告)号:US06348690B1
公开(公告)日:2002-02-19
申请号:US09131383
申请日:1998-08-07
申请人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
发明人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
IPC分类号: H01J37256
CPC分类号: H01J37/28 , G01N23/20 , G01N23/2251 , G03F7/7065 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01J37/04 , H01J37/20 , H01J37/265 , H01J2237/04756 , H01J2237/20221 , H01J2237/2444 , H01J2237/24592 , H01J2237/2817 , H01J2237/31766
摘要: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The novel inspection method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
摘要翻译: 通过提供新颖的检查方法和采用这种新方法的检测装置,本发明通过使用电子束的本发明解决了常规检查方法中遇到的问题和采用该方法的传统装置,该方法能够提高扫描样本的速度 作为半导体晶片。 本发明提供的新型检验方法包括以下步骤:产生电子束; 通过使用物镜将生成的电子束会聚在样品上; 使用会聚电子束扫描样品; 扫描期间连续移动样品; 检测在样本和物镜之间的位置处从样本发出的带电粒子,并将检测到的带电粒子转换成电信号; 存储由电信号传送的图像信息; 通过使用所存储的图像信息将图像与另一图像进行比较; 并检测样本的缺陷。
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公开(公告)号:US5561697A
公开(公告)日:1996-10-01
申请号:US372124
申请日:1995-01-13
申请人: Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Keiji Koyanagi , Ichiro Miura , Masatoshi Nishimura
发明人: Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Keiji Koyanagi , Ichiro Miura , Masatoshi Nishimura
CPC分类号: H05H13/10
摘要: Disclosed is a microtron electron accelerator having an accelerating cavity accepting microwave electric power for generating a high-frequency accelerating electric field E disposed within a uniform magnetic field B and adapted such that electrons are accelerated and caused to move in a circular trajectory under action of the magnetic field B and the electric field E, comprising an electron source formed of a cathode and an anode, which has a minute slit allowing an electron beam extracted from the cathode to pass therethrough, disposed on the outer side of the wall of the accelerating cavity, a first electron beam through-hole and a second electron beam through-hole formed in the wall of the accelerating cavity in two positions, with the electron source therebetween, along the decreasing or increasing direction of the strength of the electric field E in the accelerating cavity, and a third electron beam through-hole formed in the wall of the accelerating cavity in a position in confrontation with the first electron beam through-hole across the inner space of the accelerating cavity. By adopting the above described structure, it has been made possible to have the energy gain within the accelerating cavity at each time of acceleration increased and to have contamination of the inner surface of the accelerating cavity by evaporated cathode material decreased, and as a result, it is made possible to obtain a microtron electron accelerator smaller in size and capable of stably providing a high-energy electron beam.
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公开(公告)号:US5399873A
公开(公告)日:1995-03-21
申请号:US165919
申请日:1993-12-14
申请人: Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Keiji Koyanagi , Ichiro Miura , Masatoshi Nishimura
发明人: Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Keiji Koyanagi , Ichiro Miura , Masatoshi Nishimura
CPC分类号: H05H13/10
摘要: Disclosed is a microtron electron accelerator having an accelerating cavity accepting microwave electric power for generating a high-frequency accelerating electric field E disposed within a uniform magnetic field B and adapted such that electrons are accelerated and caused to move in a circular trajectory under action of the magnetic field B and the electric field E, comprising an electron source formed of a cathode and an anode, which has a minute slit allowing an electron beam extracted from the cathode to pass therethrough, disposed on the outer side of the wall of the accelerating cavity, a first electron beam through-hole and a second electron beam through-hole formed in the wall of the accelerating cavity in two positions, with the electron source therebetween, along the decreasing or increasing direction of the strength of the electric field E in the accelerating cavity, and a third electron beam through-hole formed in the wall of the accelerating cavity in a position in confrontation with the first electron beam through-hole across the inner space of the accelerating cavity. By adopting the above described structure, it has been made possible to have the energy gain within the accelerating cavity at each time of acceleration increased and to have contamination of the inner surface of the accelerating cavity by evaporated cathode material decreased, and as a result, it is made possible to obtain a microtron electron accelerator smaller in size and capable of stably providing a high-energy electron beam.
摘要翻译: 公开了一种微电子电子加速器,其具有接受微波功率的加速腔,用于产生设置在均匀磁场B内的高频加速电场E,并适于使电子加速并使其在圆周轨迹中移动, 磁场B和电场E,包括由阴极和阳极形成的电子源,其具有允许从阴极抽出的电子束通过的微小狭缝,其设置在加速腔的壁的外侧 形成在加速腔的壁中的两个位置的第一电子束通孔和第二电子束通孔,其中电子源沿着电场E的强度的减小或增加的方向 加速腔和形成在加速腔的壁中的第三电子束通孔 第一个电子束通孔穿过加速腔的内部空间。 通过采用上述结构,可以在每个加速时间内使加速腔内的能量增益增加,并且通过蒸发的正极材料使加速腔内表面的污染减小,结果, 可以获得尺寸较小并能够稳定地提供高能电子束的微电子电子加速器。
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