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151 条记录 (耗时 0.026 秒)

    Self-pinned GMR structure by annealing
    1.
    发明授权
    Self-pinned GMR structure by annealing 失效
    通过退火自固定GMR结构

    公开(公告)号：US07320169B2

    公开(公告)日：2008-01-22

    申请号：US10846406

    申请日：2004-05-14

    申请人： Yun-Fei Li ,  Hui-Chuan Wang ,  Tong Zhao ,  Chyu-Jiuh Torng

    发明人： Yun-Fei Li ,  Hui-Chuan Wang ,  Tong Zhao ,  Chyu-Jiuh Torng

    IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/147

    CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F41/304 ,  Y10T29/49044

    摘要： In a conventional spin valve the shunt resistance of the pinning layer reduces the overall efficiency of the device. This problem has been overcome by using IrMn for the pinning layer at a thickness of about 20 Angstroms or less. For the IrMn to be fully effective it must be subjected to a two-step anneal, first in the presence of a high field (about 10 kOe) for several hours and then in a low field (about 500 Oe) while it cools. The result, in addition to improved pinning, is the ability to do testing at the full film and full wafer levels.

    摘要翻译： 在传统的自旋阀中，钉扎层的分流电阻降低了器件的整体效率。 通过使用IrMn作为钉扎层的约20埃或更小的厚度已经克服了这个问题。 为了使IrMn完全有效，必须先进行两步退火，首先在高场（约10kOe）存在数小时，然后在低场（约500Oe）的温度下冷却。 结果，除了改进钉扎之外，还可以在整个薄膜和全晶圆级别进行测试。

    Double layer spacer for antiparallel pinned layer in CIP/CPP GMR and MTJ devices
    2.
    发明授权
    Double layer spacer for antiparallel pinned layer in CIP/CPP GMR and MTJ devices 失效
    在CIP / CPP GMR和MTJ器件中用于反平行钉扎层的双层间隔物

    公开(公告)号：US06870711B1

    公开(公告)日：2005-03-22

    申请号：US10863406

    申请日：2004-06-08

    申请人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

    发明人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

    IPC分类号： G11B5/39 ,  G11B5/127

    CPC分类号： G11B5/39 ,  Y10T29/49044

    摘要： A pinned/pinning layer configuration of the form: AP1/coupling bilayer/AP2/AFM, suitable for use in a CIP or CPP GMR sensor, a TMR sensor or an MRAM element, is found to have improved magnetic stability, yield good values of dR/R and have high values of saturation magnetization that can be adjusted to meet the requirements of magnetic field annealing. The coupling bilayer is a layer of Ru/Rh or their alloys, which provides a wide range of coupling strengths by varying either the thickness of the Ru layer or the Rh layer.

    摘要翻译： 发现适用于CIP或CPP GMR传感器，TMR传感器或MRAM元件的AP1 /耦合双层/ AP2 / AFM的钉扎/钉扎层配置具有改善的磁稳定性，产生良好的值 dR / R，并且具有高的饱和磁化值，可以调节以满足磁场退火的要求。 耦合双层是Ru / Rh或其合金层，其通过改变Ru层或Rh层的厚度来提供宽范围的耦合强度。

    Self-pinned GMR structure by annealing
    3.
    发明申请
    Self-pinned GMR structure by annealing 失效
    通过退火自固定GMR结构

    公开(公告)号：US20050252576A1

    公开(公告)日：2005-11-17

    申请号：US10846406

    申请日：2004-05-14

    申请人： Yun-Fei Li ,  Hui-Chuan Wang ,  Tong Zhao ,  Chyu-Jiuh Torng

    发明人： Yun-Fei Li ,  Hui-Chuan Wang ,  Tong Zhao ,  Chyu-Jiuh Torng

    IPC分类号： H01F10/12 ,  H01F10/32 ,  H01F41/30

    CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F41/304 ,  Y10T29/49044

    摘要： In a conventional spin valve the shunt resistance of the pinning layer reduces the overall efficiency of the device. This problem has been overcome by using IrMn for the pinning layer at a thickness of about 20 Angstroms or less. For the IrMn to be fully effective it must be subjected to a two-step anneal, first in the presence of a high field (about 10 kOe) for several hours and then in a low field (about 500 Oe) while it cools. The result, in addition to improved pinning, is the ability to do testing at the full film and full wafer levels.

    摘要翻译： 在传统的自旋阀中，钉扎层的分流电阻降低了器件的整体效率。 通过使用IrMn作为钉扎层的约20埃或更小的厚度已经克服了这个问题。 为了使IrMn完全有效，必须先进行两步退火，首先在高场（约10kOe）存在数小时，然后在低场（约500Oe）的温度下冷却。 结果，除了改进钉扎之外，还可以在整个薄膜和全晶圆级别进行测试。

    Composite free layer for CIP GMR device
    4.
    发明申请
    Composite free layer for CIP GMR device 失效
    CIP GMR器件的复合自由层

    公开(公告)号：US20060126231A1

    公开(公告)日：2006-06-15

    申请号：US11010105

    申请日：2004-12-10

    申请人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

    发明人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/3903 ,  H01L43/10

    摘要： In this invention, we replace low resistivity NiFe with high-resistivity FeNi for the FL2 portion of a composite free layer in a CIP GMR sensor in order to minimize current shunting effects while still retaining both magnetic softness and low magnetostriction. A process for manufacturing the device is also described.

    摘要翻译： 在本发明中，为了最小化电流分流效应同时保持磁性柔软性和低磁致伸缩性，我们用CIP GMR传感器中的复合自由层的FL2部分代替具有高电阻率FeNi的低电阻率NiFe。 还描述了用于制造该装置的方法。

    Composite free layer for CIP GMR device
    5.
    发明授权
    Composite free layer for CIP GMR device 失效
    CIP GMR器件的复合自由层

    公开(公告)号：US07431961B2

    公开(公告)日：2008-10-07

    申请号：US11010105

    申请日：2004-12-10

    申请人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

    发明人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

    IPC分类号： B05D5/12

    CPC分类号： G11B5/3903 ,  H01L43/10

    摘要： In this invention, we replace low resistivity NiFe with high-resistivity FeNi for the FL2 portion of a composite free layer in a CIP GMR sensor in order to minimize current shunting effects while still retaining both magnetic softness and low magnetostriction. A process for manufacturing the device is also described.

    摘要翻译： 在本发明中，为了最小化电流分流效应，同时保持磁性柔软性和低磁致伸缩性，我们用CIP GMR传感器中的复合自由层的FL 2部分代替具有高电阻率FeNi的低电阻率NiFe。 还描述了用于制造该装置的方法。