-
公开(公告)号:US20140264695A1
公开(公告)日:2014-09-18
申请号:US14212045
申请日:2014-03-14
申请人: Yun-Ki Lee , Chang-Rok Moon , Duck-Hyung Lee
发明人: Yun-Ki Lee , Chang-Rok Moon , Duck-Hyung Lee
IPC分类号: H01L27/146
CPC分类号: H01L27/1462 , H01L27/14601 , H01L27/1463 , H01L27/1464 , H01L27/14685 , H01L27/14687 , H01L27/14689
摘要: An image sensor includes a semiconductor layer having a first surface and a second surface opposite to each other and including a photodiode and a hydrogen containing region adjacent the first surface. A crystalline anti-reflective layer is on the first surface of the semiconductor layer, and is configured to allow hydrogen atoms to penetrate into the first surface of the semiconductor layer. Driving transistors and wires are on the second surface of the semiconductor layer, and a color filter and a micro lens are on the anti-reflective layer. The hydrogen containing region contains hydrogen atoms that combine with defects at the first surface.
摘要翻译: 图像传感器包括具有彼此相对的第一表面和第二表面的半导体层,并且包括光电二极管和与第一表面相邻的含氢区域。 晶体抗反射层位于半导体层的第一表面上,并且被配置为允许氢原子穿透到半导体层的第一表面。 驱动晶体管和导线位于半导体层的第二表面上,滤色器和微透镜位于抗反射层上。 含氢区含有与第一表面的缺陷结合的氢原子。
-
公开(公告)号:US07750280B2
公开(公告)日:2010-07-06
申请号:US11987607
申请日:2007-12-03
申请人: Sung-Ho Hwang , Duck-Hyung Lee , Chang-Rok Moon , Doo-Won Kwon
发明人: Sung-Ho Hwang , Duck-Hyung Lee , Chang-Rok Moon , Doo-Won Kwon
IPC分类号: B05D5/12
CPC分类号: H01L27/14627 , H01L27/14621 , H01L27/1464 , H01L27/14685 , H01L31/02165
摘要: A back-illuminated image sensor may include a substrate in which photodiodes are disposed; an insulating layer on a first surface of the substrate; an interconnection layer in the insulating layer; an anti-reflection layer between the substrate and the insulating layer; a plurality of color filters on a second surface of the substrate opposite to the first surface; and a microlens on the color filters. Because the anti-reflection layer may be between the substrate and an interlayer dielectric layer, the reflection rate of light that passes through the substrate and arrives at an interface between the substrate and the interlayer insulating layer may be reduced.
摘要翻译: 背照式图像传感器可以包括其中设置有光电二极管的基板; 在所述基板的第一表面上的绝缘层; 绝缘层中的互连层; 在所述基板和所述绝缘层之间的抗反射层; 在所述基板的与所述第一表面相对的第二表面上的多个滤色器; 和滤色片上的微透镜。 因为防反射层可以在基板和层间电介质层之间,所以可以减少穿过基板并到达基板与层间绝缘层之间的界面的光的反射率。
-
公开(公告)号:US07675099B2
公开(公告)日:2010-03-09
申请号:US11999227
申请日:2007-12-04
申请人: Sung-Ho Hwang , Duck-Hyung Lee , Chang-Rok Moon
发明人: Sung-Ho Hwang , Duck-Hyung Lee , Chang-Rok Moon
IPC分类号: H01L31/113
CPC分类号: H01L27/14625 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L27/14687 , H01L31/02165 , H01L31/02327
摘要: Provided are an image sensor and a method of forming the image sensor. The image sensor has a base multi-layered reflection layer interposed between a photodiode and an interlayer insulating layer. The photodiode has a first surface adjacent to the interlayer insulating layer and a second surface opposite the first surface. Here, external light is incident on the second surface of the photodiode. Also, the image sensor includes a sidewall multi-layered reflection layer that encloses the photodiode.
摘要翻译: 提供了一种图像传感器和形成图像传感器的方法。 图像传感器具有介于光电二极管和层间绝缘层之间的基底多层反射层。 光电二极管具有与层间绝缘层相邻的第一表面和与第一表面相对的第二表面。 这里,外部光入射到光电二极管的第二表面上。 此外,图像传感器包括围绕光电二极管的侧壁多层反射层。
-
公开(公告)号:US08614113B2
公开(公告)日:2013-12-24
申请号:US13239457
申请日:2011-09-22
申请人: Yu-Jin Ahn , Duck-Hyung Lee , Jong-Cheol Shin , Chang-Rok Moon , Sang-Jun Choi , Eun-Kyung Park
发明人: Yu-Jin Ahn , Duck-Hyung Lee , Jong-Cheol Shin , Chang-Rok Moon , Sang-Jun Choi , Eun-Kyung Park
IPC分类号: H01L21/00 , H01L27/146
CPC分类号: H01L27/14689 , H01L27/14609 , H01L27/1463
摘要: An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.
摘要翻译: 提供了一种用于制造图像传感器的图像传感器和方法。 制造图像传感器的方法包括在具有多个像素区域的半导体外延层上形成第一绝缘层; 在像素区域之间的边界区域中构图半导体外延层和第一绝缘层的一部分以形成沟槽; 在所述第一绝缘层上形成掩埋绝缘层,填充所述沟槽,所述掩埋绝缘层具有平坦的顶表面; 在所述掩埋绝缘层上形成第二绝缘层; 在所述第二绝缘层上形成第一掩模图案,所述第一掩模图案限定与所述沟槽重叠的开口; 以及使用所述第一掩模图案作为离子注入掩模进行离子注入处理,以在所述沟槽的底部形成第一类型的势垒区域。
-
公开(公告)号:US20080131588A1
公开(公告)日:2008-06-05
申请号:US11987607
申请日:2007-12-03
申请人: Sung-Ho Hwang , Duck-Hyung Lee , Chang-Rok Moon , Doo-Won Kwon
发明人: Sung-Ho Hwang , Duck-Hyung Lee , Chang-Rok Moon , Doo-Won Kwon
IPC分类号: B05D5/12
CPC分类号: H01L27/14627 , H01L27/14621 , H01L27/1464 , H01L27/14685 , H01L31/02165
摘要: A back-illuminated image sensor may include a substrate in which photodiodes are disposed; an insulating layer on a first surface of the substrate; an interconnection layer in the insulating layer; an anti-reflection layer between the substrate and the insulating layer; a plurality of color filters on a second surface of the substrate opposite to the first surface; and a microlens on the color filters. Because the anti-reflection layer may be between the substrate and an interlayer dielectric layer, the reflection rate of light that passes through the substrate and arrives at an interface between the substrate and the interlayer insulating layer may be reduced.
摘要翻译: 背照式图像传感器可以包括其中设置有光电二极管的基板; 在所述基板的第一表面上的绝缘层; 绝缘层中的互连层; 在所述基板和所述绝缘层之间的抗反射层; 在所述基板的与所述第一表面相对的第二表面上的多个滤色器; 和滤色片上的微透镜。 因为防反射层可以在基板和层间电介质层之间,所以可以减少穿过基板并到达基板与层间绝缘层之间的界面的光的反射率。
-
公开(公告)号:US20120077301A1
公开(公告)日:2012-03-29
申请号:US13239457
申请日:2011-09-22
申请人: Yu-Jin Ahn , Duck-Hyung Lee , Jong-Cheol Shin , Chang-Rok Moon , Sang-Jun Choi , Eun-Kyung Park
发明人: Yu-Jin Ahn , Duck-Hyung Lee , Jong-Cheol Shin , Chang-Rok Moon , Sang-Jun Choi , Eun-Kyung Park
IPC分类号: H01L31/18
CPC分类号: H01L27/14689 , H01L27/14609 , H01L27/1463
摘要: An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.
摘要翻译: 提供了一种用于制造图像传感器的图像传感器和方法。 制造图像传感器的方法包括在具有多个像素区域的半导体外延层上形成第一绝缘层; 在像素区域之间的边界区域中构图半导体外延层和第一绝缘层的一部分以形成沟槽; 在所述第一绝缘层上形成掩埋绝缘层,填充所述沟槽,所述掩埋绝缘层具有平坦的顶表面; 在所述掩埋绝缘层上形成第二绝缘层; 在所述第二绝缘层上形成第一掩模图案,所述第一掩模图案限定与所述沟槽重叠的开口; 以及使用所述第一掩模图案作为离子注入掩模进行离子注入处理,以在所述沟槽的底部形成第一类型的势垒区域。
-
公开(公告)号:US20080128845A1
公开(公告)日:2008-06-05
申请号:US11999227
申请日:2007-12-04
申请人: Sung-Ho Hwang , Duck-Hyung Lee , Chang-Rok Moon
发明人: Sung-Ho Hwang , Duck-Hyung Lee , Chang-Rok Moon
IPC分类号: H01L31/0232
CPC分类号: H01L27/14625 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L27/14687 , H01L31/02165 , H01L31/02327
摘要: Provided are an image sensor and a method of forming the image sensor. The image sensor has a base multi-layered reflection layer interposed between a photodiode and an interlayer insulating layer. The photodiode has a first surface adjacent to the interlayer insulating layer and a second surface opposite the first surface. Here, external light is incident on the second surface of the photodiode. Also, the image sensor includes a sidewall multi-layered reflection layer that encloses the photodiode.
摘要翻译: 提供了一种图像传感器和形成图像传感器的方法。 图像传感器具有介于光电二极管和层间绝缘层之间的基底多层反射层。 光电二极管具有与层间绝缘层相邻的第一表面和与第一表面相对的第二表面。 这里,外部光入射到光电二极管的第二表面上。 此外,图像传感器包括围绕光电二极管的侧壁多层反射层。
-
公开(公告)号:US07531790B2
公开(公告)日:2009-05-12
申请号:US11889252
申请日:2007-08-10
申请人: Yun-Ki Lee , Duck-Hyung Lee
发明人: Yun-Ki Lee , Duck-Hyung Lee
CPC分类号: H01L27/14627 , H01L27/14621 , H01L27/14685
摘要: An image sensor includes at least one photoelectric conversion area on a semiconductor substrate, a color filter over the photoelectric conversion area, and an apochromatic microlens over the color filter.
摘要翻译: 图像传感器包括半导体衬底上的至少一个光电转换区域,光电转换区域上的滤色器以及滤色器上的复消色差微透镜。
-
公开(公告)号:US08576318B2
公开(公告)日:2013-11-05
申请号:US12899273
申请日:2010-10-06
申请人: Yun-Ki Lee , Duck-Hyung Lee
发明人: Yun-Ki Lee , Duck-Hyung Lee
IPC分类号: H04N5/217 , H04N3/14 , H04N5/335 , H01L27/00 , H01L31/062 , H01L31/113
CPC分类号: H01L27/14689 , H01L27/14609 , H01L27/1462 , H01L27/14632 , H01L27/1464 , H01L27/14687
摘要: An image sensor and a method of fabricating the same are provided. The image sensor includes a substrate having a pixel region including a plurality of unit pixels and a non-pixel region, at least one first well in the non-pixel region, an interconnect structure on a first side of the substrate, and a base well in the non-pixel region and between the first well and a second side of the substrate.
摘要翻译: 提供了图像传感器及其制造方法。 图像传感器包括具有包括多个单位像素和非像素区域的像素区域的基板,非像素区域中的至少一个第一阱,基板的第一侧上的互连结构,以及基底阱 在非像素区域以及衬底的第一阱和第二侧之间。
-
公开(公告)号:US20080035836A1
公开(公告)日:2008-02-14
申请号:US11889252
申请日:2007-08-10
申请人: Yun-Ki Lee , Duck-Hyung Lee
发明人: Yun-Ki Lee , Duck-Hyung Lee
IPC分类号: H01L31/0232
CPC分类号: H01L27/14627 , H01L27/14621 , H01L27/14685
摘要: An image sensor includes at least one photoelectric conversion area on a semiconductor substrate, a color filter over the photoelectric conversion area, and an apochromatic microlens over the color filter.
摘要翻译: 图像传感器包括半导体衬底上的至少一个光电转换区域,光电转换区域上的滤色器以及滤色器上的复消色差微透镜。
-
-
-
-
-
-
-
-
-