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1.发明申请SILICON NITRIDE SUBSTRATE, CIRCUIT SUBSTRATE AND ELECTRONIC DEVICE USING THE SAME 有权硅氮化物衬底，电路衬底和使用该硅衬底的电子器件公开(公告)号：US20120281362A1
公开(公告)日：2012-11-08
申请号：US13522218
申请日：2011-01-13
CPC分类号： H01L23/13 , C04B35/587 , C04B37/026 , C04B2235/3206 , C04B2235/3217 , C04B2235/3224 , C04B2235/3878 , C04B2235/3882 , C04B2235/5276 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/6581 , C04B2235/6582 , C04B2235/6587 , C04B2235/721 , C04B2235/723 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/945 , C04B2235/9607 , C04B2237/125 , C04B2237/368 , C04B2237/407 , C04B2237/74 , H01L23/15 , H01L23/3731 , H01L23/3735 , H01L35/32 , H01L2924/0002 , H05K1/0306 , H05K3/38 , H05K2201/0248 , H05K2201/0266 , H05K2201/0269 , Y10T428/24413 , Y10T428/24421 , Y10T428/25 , Y10T428/259 , H01L2924/00
摘要： A silicon nitride substrate comprises a substrate comprising a silicon nitride sintered body, and a plurality of granular bodies containing silicon and integrated to a principal surface of the substrate, wherein a plurality of needle crystals or column crystals comprising mainly silicon nitride are extended from a portion of the granular bodies. A brazing material is applied to a principal surface of the substrate, and a circuit member and a heat radiation member are arranged on the applied brazing material, and bonded by heating. Because of a plurality of granular bodies integrated to the principal surface of the substrate, and a plurality of the needle crystals or the column crystals extended from a portion of the granular bodies, a high anchor effect is produced so that the circuit member and the heat radiation member are firmly bonded to the silicon nitride substrate.
摘要翻译： 氮化硅衬底包括含有氮化硅烧结体的衬底和多个含有硅的颗粒体并且与衬底的主表面集成在一起，其中主要包含氮化硅的多个针状晶体或柱状晶体从一部分 的颗粒体。 将钎焊材料施加到基板的主表面，并且将电路构件和散热构件布置在所施加的钎焊材料上，并通过加热粘合。 由于集成到基板的主面的多个粒状体以及从一部分粒状体延伸的多个针状晶体或柱状晶体，产生高的锚定效应，使得电路部件和热量 辐射构件牢固地结合到氮化硅衬底上。
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2.发明授权Silicon nitride substrate, circuit substrate and electronic device using the same 有权氮化硅衬底，电路衬底和使用其的电子器件公开(公告)号：US09293384B2
公开(公告)日：2016-03-22
申请号：US13522218
申请日：2011-01-13
IPC分类号： H01L23/15 , H05K7/20 , H05K1/00 , B32B33/00 , H01L23/13 , H01L35/32 , C04B35/587 , C04B37/02 , H05K1/03 , H05K3/38
CPC分类号： H01L23/13 , C04B35/587 , C04B37/026 , C04B2235/3206 , C04B2235/3217 , C04B2235/3224 , C04B2235/3878 , C04B2235/3882 , C04B2235/5276 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/6581 , C04B2235/6582 , C04B2235/6587 , C04B2235/721 , C04B2235/723 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/945 , C04B2235/9607 , C04B2237/125 , C04B2237/368 , C04B2237/407 , C04B2237/74 , H01L23/15 , H01L23/3731 , H01L23/3735 , H01L35/32 , H01L2924/0002 , H05K1/0306 , H05K3/38 , H05K2201/0248 , H05K2201/0266 , H05K2201/0269 , Y10T428/24413 , Y10T428/24421 , Y10T428/25 , Y10T428/259 , H01L2924/00
摘要： A silicon nitride substrate comprises a substrate comprising a silicon nitride sintered body, and a plurality of granular bodies containing silicon and integrated to a principal surface of the substrate, wherein a plurality of needle crystals or column crystals comprising mainly silicon nitride are extended from a portion of the granular bodies. A brazing material is applied to a principal surface of the substrate, and a circuit member and a heat radiation member are arranged on the applied brazing material, and bonded by heating. Because of a plurality of granular bodies integrated to the principal surface of the substrate, and a plurality of the needle crystals or the column crystals extended from a portion of the granular bodies, a high anchor effect is produced so that the circuit member and the heat radiation member are firmly bonded to the silicon nitride substrate.
摘要翻译： 氮化硅衬底包括含有氮化硅烧结体的衬底和多个含有硅的颗粒体并且与衬底的主表面集成在一起，其中主要包含氮化硅的多个针状晶体或柱状晶体从一部分 的颗粒体。 将钎焊材料施加到基板的主表面，并且将电路构件和散热构件布置在所施加的钎焊材料上，并通过加热粘合。 由于集成到基板的主面的多个粒状体以及从一部分粒状体延伸的多个针状晶体或柱状晶体，产生高的锚定效应，使得电路部件和热量 辐射构件牢固地结合到氮化硅衬底上。
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