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公开(公告)号：US07440239B2
公开(公告)日：2008-10-21
申请号：US10671586
申请日：2003-09-29
IPC分类号： G11B5/127
CPC分类号： G11B5/3903 , G01R33/09 , G11B5/39 , G11B2005/0002 , H01L43/08
摘要： It is possible to obtain sensitivity which can achieve an excellent error rate with a high recording density. There are provided a magnetization free layer which has two opposed main surfaces, one of which is set to be generally parallel to an air bearing surface; an intermediate layer which is formed on an opposite side face of the magnetization free layer from a medium to come in contact with the magnetization free layer; and a pair of magnetization pinned layers which are formed on an opposite side face of the intermediate layer from the magnetization free layer to come in contact with the intermediate layer and extend outwardly. A sense current flows from one magnetization pinned layer to the other magnetization pinned layer through the magnetization free layer.
摘要翻译： 可以获得可以以高记录密度实现出色错误率的灵敏度。 提供了一个磁化自由层，它具有两个相对的主表面，其中一个主表面大致平行于空气轴承表面; 在与磁化自由层接触的介质上形成在磁化自由层的相对侧面上的中间层; 以及一对磁化固定层，其形成在中间层的与磁化自由层相对的侧面上以与中间层接触并向外延伸。 感测电流通过无磁化层从一个磁化固定层流向另一个磁化固定层。
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2.发明授权公开(公告)号：US07027273B2
公开(公告)日：2006-04-11
申请号：US10968983
申请日：2004-10-21
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. The intermediate layer includes a stacked film of a metal layer/an oxide layer, a stacked film of a metal layer/a nitride layer, a sandwich film of a metal layer/an oxide layer/a metal layer, or a sandwich film of a metal layer/a nitride layer/a metal layer.
摘要翻译： 磁阻头具有包括第一和第二磁化自由层的磁阻膜，夹在第一和第二磁化自由层之间的中间层，下层和保护层，其以下层的顺序层叠，第一磁化自由层 中间层，第二磁化自由层和保护层，并且布置成基本上垂直于空气轴承表面，并且与底层连接的第一电极和与保护层连接的第二电极，电极允许电流 以基本垂直于该平面的方向流动。 中间层包括金属层/氧化物层的叠层膜，金属层/氮化物层的叠层膜，金属层/氧化物层/金属层的夹层膜，或者是 金属层/氮化物层/金属层。
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公开(公告)号：US20050052794A1
公开(公告)日：2005-03-10
申请号：US10968979
申请日：2004-10-21
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.
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公开(公告)号：US07061732B2
公开(公告)日：2006-06-13
申请号：US10968979
申请日：2004-10-21
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.
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5.发明申请Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus 审中-公开磁阻头和垂直磁记录再现装置公开(公告)号：US20060126228A1
公开(公告)日：2006-06-15
申请号：US11352372
申请日：2006-02-13
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer-sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.
摘要翻译： 磁阻磁头具有包括第一和第二磁化自由层的磁阻膜，夹在第一和第二磁化自由层之间的中间层，底层和保护层，其以下层的顺序堆叠，第一磁化自由度 层，中间层，第二磁化自由层和保护层，并且布置成基本上垂直于空气轴承表面，以及与底层连接的第一电极和与保护层连接的第二电极，电极允许 电流在基本垂直于该平面的方向上流动。 允许第一和第二磁化自由层的每个磁化方向响应于来自介质的信号磁通而独立地变化。 第一和第二磁化自由层根据其磁化方向产生磁阻效应。
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公开(公告)号：US20050052795A1
公开(公告)日：2005-03-10
申请号：US10968983
申请日：2004-10-21
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.
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7.发明授权公开(公告)号：US07016169B2
公开(公告)日：2006-03-21
申请号：US10968958
申请日：2004-10-21
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, a first electrode, a second electrode, a pair of first antiferromagnetic films, and a pair of second antiferromagnetic films. The first electrode is connected with the underlayer and the second electrode is connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane of the magnetoresistive film. The pair of first antiferromagnetic films imparts a magnetic bias to the first magnetization free layer in a predetermined direction, and the pair of second antiferromagnetic films imparts a magnetic bias to the second magnetization free layer in a predetermined direction.
摘要翻译： 磁阻头具有包括第一和第二磁化自由层的磁阻膜，夹在第一和第二磁化自由层之间的中间层，底层和保护层，第一电极，第二电极，一对第一反铁磁膜， 和一对第二反铁磁膜。 第一电极与底层连接，第二电极与保护层连接，电极允许电流在基本垂直于磁阻膜的平面的方向上流动。 一对第一反铁磁膜在预定方向上向第一磁化自由层施加磁偏压，并且该对第二反铁磁膜在预定方向上给予第二磁化自由层的磁偏置。
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8.发明授权公开(公告)号：US06847509B2
公开(公告)日：2005-01-25
申请号：US10059153
申请日：2002-01-31
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.
摘要翻译： 磁阻头具有包括第一和第二磁化自由层的磁阻膜，夹在第一和第二磁化自由层之间的中间层，下层和保护层，其以下层的顺序层叠，第一磁化自由层 中间层，第二磁化自由层和保护层，并且布置成基本上垂直于空气轴承表面，并且与底层连接的第一电极和与保护层连接的第二电极，电极允许电流 以基本垂直于该平面的方向流动。 允许第一和第二磁化自由层的每个磁化方向响应于来自介质的信号磁通而独立地变化。 第一和第二磁化自由层根据其磁化方向产生磁阻效应。
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9.发明授权Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权磁阻效应元件，其制造方法，磁再现元件和磁存储器公开(公告)号：US07494724B2
公开(公告)日：2009-02-24
申请号：US11773294
申请日：2007-07-03
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle an be interrupted when the current reaches a predetermined value.
摘要翻译： 一种制造磁阻效应元件的方法包括：在第一铁磁层上形成绝缘层，通过从绝缘层的顶表面推出针而形成到达第一铁磁层的孔，以及沉积铁磁材料以形成第二铁磁体 覆盖掩埋孔的绝缘层的层。 孔径可以具有不大于20nm的开口宽度。 可以监测在第一铁磁层和针之间流动的电流，并且当电流达到预定值时针头的推压被中断。
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10.发明授权Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权磁阻效应元件，其制造方法，磁再现元件和磁存储器公开(公告)号：US07355883B2
公开(公告)日：2008-04-08
申请号：US11006594
申请日：2004-12-08
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译： 磁阻效应元件包括第一铁磁层（1），覆盖第一铁磁层的绝缘层（3）和覆盖绝缘层的第二铁磁层（2）。 绝缘层形成了具有不大于20nm的开口宽度的通孔（A），并且第一和第二铁磁层经由通孔相互连接。
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