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1.发明授权Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权磁阻效应元件，其制造方法，磁再现元件和磁存储器公开(公告)号：US07494724B2
公开(公告)日：2009-02-24
申请号：US11773294
申请日：2007-07-03
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle an be interrupted when the current reaches a predetermined value.
摘要翻译： 一种制造磁阻效应元件的方法包括：在第一铁磁层上形成绝缘层，通过从绝缘层的顶表面推出针而形成到达第一铁磁层的孔，以及沉积铁磁材料以形成第二铁磁体 覆盖掩埋孔的绝缘层的层。 孔径可以具有不大于20nm的开口宽度。 可以监测在第一铁磁层和针之间流动的电流，并且当电流达到预定值时针头的推压被中断。
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2.发明授权Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权磁阻效应元件，其制造方法，磁再现元件和磁存储器公开(公告)号：US07355883B2
公开(公告)日：2008-04-08
申请号：US11006594
申请日：2004-12-08
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译： 磁阻效应元件包括第一铁磁层（1），覆盖第一铁磁层的绝缘层（3）和覆盖绝缘层的第二铁磁层（2）。 绝缘层形成了具有不大于20nm的开口宽度的通孔（A），并且第一和第二铁磁层经由通孔相互连接。
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3.发明申请Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权磁阻效应元件，其制造方法，磁再现元件和磁存储器公开(公告)号：US20050094327A1
公开(公告)日：2005-05-05
申请号：US11006594
申请日：2004-12-08
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译： 磁阻效应元件包括第一铁磁层（1），覆盖第一铁磁层的绝缘层（3）和覆盖绝缘层的第二铁磁层（2）。 绝缘层形成了具有不大于20nm的开口宽度的通孔（A），并且第一和第二铁磁层经由通孔相互连接。
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4.发明申请公开(公告)号：US20080013222A1
公开(公告)日：2008-01-17
申请号：US11773294
申请日：2007-07-03
申请人： Shiho OKUNO , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho OKUNO , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle an be interrupted when the current reaches a predetermined value.
摘要翻译： 一种制造磁阻效应元件的方法包括：在第一铁磁层上形成绝缘层，通过从绝缘层的顶表面推出针而形成到达第一铁磁层的孔，以及沉积铁磁材料以形成第二铁磁体 覆盖掩埋孔的绝缘层的层。 孔径可以具有不大于20nm的开口宽度。 可以监测在第一铁磁层和针之间流动的电流，并且当电流达到预定值时针头的推压被中断。
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5.发明授权Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权磁阻效应元件，其制造方法，磁再现元件和磁存储器公开(公告)号：US07265950B2
公开(公告)日：2007-09-04
申请号：US10935578
申请日：2004-09-08
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译： 磁阻效应元件包括第一铁磁层（1），覆盖第一铁磁层的绝缘层（3）和覆盖绝缘层的第二铁磁层（2）。 绝缘层形成了具有不大于20nm的开口宽度的通孔（A），并且第一和第二铁磁层经由通孔相互连接。
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6.发明申请Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权磁阻效应元件，其制造方法，磁再现元件和磁存储器公开(公告)号：US20050042478A1
公开(公告)日：2005-02-24
申请号：US10935578
申请日：2004-09-08
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译： 磁阻效应元件包括第一铁磁层（1），覆盖第一铁磁层的绝缘层（3）和覆盖绝缘层的第二铁磁层（2）。 绝缘层形成了具有不大于20nm的开口宽度的通孔（A），并且第一和第二铁磁层经由通孔相互连接。
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公开(公告)号：US07240419B2
公开(公告)日：2007-07-10
申请号：US10796086
申请日：2004-03-10
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： G11B5/133
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle can be interrupted when the current reaches a predetermined value.
摘要翻译： 一种制造磁阻效应元件的方法包括：在第一铁磁层上形成绝缘层，通过从绝缘层的顶表面推出针而形成到达第一铁磁层的孔，以及沉积铁磁材料以形成第二铁磁体 覆盖掩埋孔的绝缘层的层。 孔径可以具有不大于20nm的开口宽度。 可以监测在第一铁磁层和针之间流动的电流，并且当电流达到预定值时可以中断针的推压。
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8.发明授权Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 失效磁阻效应元件，其制造方法，磁再现元件和磁存储器公开(公告)号：US06937447B2
公开(公告)日：2005-08-30
申请号：US10244550
申请日：2002-09-17
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer, insulating layer overlying the first ferromagnetic layer, and second ferromagnetic layer overlying the insulating layer. The insulating layer has formed a through hole having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译： 磁阻效应元件包括第一铁磁层，覆盖第一铁磁层的绝缘层和覆盖绝缘层的第二铁磁层。 绝缘层形成了具有不大于20nm的开口宽度的通孔，并且第一和第二铁磁层经由通孔相互连接。
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公开(公告)号：US08716818B2
公开(公告)日：2014-05-06
申请号：US13428465
申请日：2012-03-23
申请人： Masatoshi Yoshikawa , Satoshi Seto , Hideaki Harakawa , Jyunichi Ozeki , Tatsuya Kishi , Keiji Hosotani
发明人： Masatoshi Yoshikawa , Satoshi Seto , Hideaki Harakawa , Jyunichi Ozeki , Tatsuya Kishi , Keiji Hosotani
CPC分类号： H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall spacer layer on sidewalls of the reference layer and the hard mask layer. An in-plane size of the reference layer is smaller than an in-plane size of the storage layer. A difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less. The sidewall spacer layer includes a material selected from a group of a diamond, DLC, BN, SiC, B4C, Al2O3 and AlN.
摘要翻译： 根据一个实施例，磁阻元件包括具有可变和垂直磁化的存储层，存储层上的隧道势垒层，在隧道势垒层上具有不变和垂直磁化的参考层，参考上的硬掩模层 层和在参考层和硬掩模层的侧壁上的侧壁间隔层。 参考层的面内尺寸小于存储层的面内尺寸。 存储层和参考层的面内尺寸之差为2nm以下。 侧壁间隔层包括选自金刚石，DLC，BN，SiC，B4C，Al2O3和AlN的材料。
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公开(公告)号：US20130001652A1
公开(公告)日：2013-01-03
申请号：US13428465
申请日：2012-03-23
申请人： Masatoshi Yoshikawa , Satoshi Seto , Hideaki Harakawa , Jyunichi Ozeki , Tatsuya Kishi , Keiji Hosotani
发明人： Masatoshi Yoshikawa , Satoshi Seto , Hideaki Harakawa , Jyunichi Ozeki , Tatsuya Kishi , Keiji Hosotani
CPC分类号： H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall spacer layer on sidewalls of the reference layer and the hard mask layer. An in-plane size of the reference layer is smaller than an in-plane size of the storage layer. A difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less. The sidewall spacer layer includes a material selected from a group of a diamond, DLC, BN, SiC, B4C, Al2O3 and AlN.
摘要翻译： 根据一个实施例，磁阻元件包括具有可变和垂直磁化的存储层，存储层上的隧道势垒层，在隧道势垒层上具有不变和垂直磁化的参考层，参考上的硬掩模层 层和在参考层和硬掩模层的侧壁上的侧壁间隔层。 参考层的面内尺寸小于存储层的面内尺寸。 存储层和参考层的面内尺寸之差为2nm以下。 侧壁间隔层包括选自金刚石，DLC，BN，SiC，B4C，Al2O3和AlN的材料。
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