-
1.发明授权Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权磁阻效应元件，其制造方法，磁再现元件和磁存储器公开(公告)号：US07494724B2
公开(公告)日：2009-02-24
申请号：US11773294
申请日：2007-07-03
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle an be interrupted when the current reaches a predetermined value.
摘要翻译： 一种制造磁阻效应元件的方法包括：在第一铁磁层上形成绝缘层，通过从绝缘层的顶表面推出针而形成到达第一铁磁层的孔，以及沉积铁磁材料以形成第二铁磁体 覆盖掩埋孔的绝缘层的层。 孔径可以具有不大于20nm的开口宽度。 可以监测在第一铁磁层和针之间流动的电流，并且当电流达到预定值时针头的推压被中断。
-
2.发明授权Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权磁阻效应元件，其制造方法，磁再现元件和磁存储器公开(公告)号：US07355883B2
公开(公告)日：2008-04-08
申请号：US11006594
申请日：2004-12-08
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译： 磁阻效应元件包括第一铁磁层（1），覆盖第一铁磁层的绝缘层（3）和覆盖绝缘层的第二铁磁层（2）。 绝缘层形成了具有不大于20nm的开口宽度的通孔（A），并且第一和第二铁磁层经由通孔相互连接。
-
3.发明申请Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权磁阻效应元件，其制造方法，磁再现元件和磁存储器公开(公告)号：US20050094327A1
公开(公告)日：2005-05-05
申请号：US11006594
申请日：2004-12-08
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译： 磁阻效应元件包括第一铁磁层（1），覆盖第一铁磁层的绝缘层（3）和覆盖绝缘层的第二铁磁层（2）。 绝缘层形成了具有不大于20nm的开口宽度的通孔（A），并且第一和第二铁磁层经由通孔相互连接。
-
4.发明授权Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权磁阻效应元件，其制造方法，磁再现元件和磁存储器公开(公告)号：US07265950B2
公开(公告)日：2007-09-04
申请号：US10935578
申请日：2004-09-08
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译： 磁阻效应元件包括第一铁磁层（1），覆盖第一铁磁层的绝缘层（3）和覆盖绝缘层的第二铁磁层（2）。 绝缘层形成了具有不大于20nm的开口宽度的通孔（A），并且第一和第二铁磁层经由通孔相互连接。
-
5.发明申请Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权磁阻效应元件，其制造方法，磁再现元件和磁存储器公开(公告)号：US20050042478A1
公开(公告)日：2005-02-24
申请号：US10935578
申请日：2004-09-08
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译： 磁阻效应元件包括第一铁磁层（1），覆盖第一铁磁层的绝缘层（3）和覆盖绝缘层的第二铁磁层（2）。 绝缘层形成了具有不大于20nm的开口宽度的通孔（A），并且第一和第二铁磁层经由通孔相互连接。
-
公开(公告)号：US07240419B2
公开(公告)日：2007-07-10
申请号：US10796086
申请日：2004-03-10
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： G11B5/133
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle can be interrupted when the current reaches a predetermined value.
摘要翻译： 一种制造磁阻效应元件的方法包括：在第一铁磁层上形成绝缘层，通过从绝缘层的顶表面推出针而形成到达第一铁磁层的孔，以及沉积铁磁材料以形成第二铁磁体 覆盖掩埋孔的绝缘层的层。 孔径可以具有不大于20nm的开口宽度。 可以监测在第一铁磁层和针之间流动的电流，并且当电流达到预定值时可以中断针的推压。
-
7.发明授权Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 失效磁阻效应元件，其制造方法，磁再现元件和磁存储器公开(公告)号：US06937447B2
公开(公告)日：2005-08-30
申请号：US10244550
申请日：2002-09-17
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer, insulating layer overlying the first ferromagnetic layer, and second ferromagnetic layer overlying the insulating layer. The insulating layer has formed a through hole having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译： 磁阻效应元件包括第一铁磁层，覆盖第一铁磁层的绝缘层和覆盖绝缘层的第二铁磁层。 绝缘层形成了具有不大于20nm的开口宽度的通孔，并且第一和第二铁磁层经由通孔相互连接。
-
公开(公告)号：US5700588A
公开(公告)日：1997-12-23
申请号：US613170
申请日：1996-03-08
申请人： Yoshiaki Saito , Shiho Okuno , Koichiro Inomata
发明人： Yoshiaki Saito , Shiho Okuno , Koichiro Inomata
CPC分类号： B82Y25/00 , G01R33/093 , H01L43/10 , Y10S428/928 , Y10T428/12465 , Y10T428/12632 , Y10T428/12875 , Y10T428/12896 , Y10T428/1291
摘要： A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing three magnetic elements of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto.
摘要翻译： 磁阻效应元件包括通过交替堆叠磁性和非磁性层形成的多层。 含有Fe，Co和Ni三种磁性元素的磁性层。 任何两个彼此相邻的磁性层，其中一个非磁性层插入其间，在基本不施加磁场的条件下进行反铁磁耦合。
-
公开(公告)号：US5578385A
公开(公告)日：1996-11-26
申请号：US364524
申请日：1994-12-27
申请人： Yoshiaki Saito , Shiho Okuno , Koichiro Inomata
发明人： Yoshiaki Saito , Shiho Okuno , Koichiro Inomata
CPC分类号： B82Y25/00 , G01R33/093 , H01L43/10 , Y10S428/928 , Y10T428/12465 , Y10T428/12632 , Y10T428/12875 , Y10T428/12896 , Y10T428/1291
摘要： A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferro-magnetically coupled under a condition where a magnetic field is not substantially applied thereto.
摘要翻译： 磁阻效应元件包括通过交替堆叠磁性和非磁性层形成的多层。 磁性层含有至少两个选自由Fe，Co和Ni组成的一组磁性元素的磁性元素。 彼此相邻的两个磁性层，其间插入非磁性层之一，在基本不施加磁场的条件下进行反铁磁耦合。
-
公开(公告)号：US5500633A
公开(公告)日：1996-03-19
申请号：US323809
申请日：1994-10-17
CPC分类号： H01L43/10
摘要： A magnetoresistance effect element includes a multilayer stack of alternating magnetic and nonmagnetic layers, and having a mixture layer constituted by a mixture of a ferromagnetic element and a non-ferromagnetic element interposed between adjacent stacked magnetic and non-magnetic layers so as to exhibit a magnetoresistance effect. The multilayered stack includes at least two magnetic layers, at least two mixture layers, and at least one non-magnetic layer. 2(X.sub.1 /X.sub.n)/n is larger than 1.1 where n is the number of atomic layers of the mixture layer, X.sub.1 is an atomic concentration (%) of the ferromagnetic element of an atomic layer closest to the magnetic layer, and X.sub.n is an atomic concentration (%) of the ferromagnetic element of the n-th atomic layer closest to the non-magnetic layer.
摘要翻译： 磁阻效应元件包括交替的磁性和非磁性层的多层堆叠，并且具有由介于相邻的堆叠的磁性和非磁性层之间的铁磁性元件和非铁磁性元件的混合物构成的混合层，以便表现出磁阻 影响。 多层堆叠包括至少两个磁性层，至少两个混合层和至少一个非磁性层。 2（X1 / Xn）/ n大于1.1，其中n是混合层的原子层数，X1是最靠近磁层的原子层的铁磁元素的原子浓度（％），Xn是 最接近非磁性层的第n个原子层的铁磁性元素的原子浓度（％）。
-
-
-
-
-
-
-
-
-
搜索结果
17 条记录 (耗时 0.037 秒)
