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1.发明授权公开(公告)号：US07016169B2
公开(公告)日：2006-03-21
申请号：US10968958
申请日：2004-10-21
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, a first electrode, a second electrode, a pair of first antiferromagnetic films, and a pair of second antiferromagnetic films. The first electrode is connected with the underlayer and the second electrode is connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane of the magnetoresistive film. The pair of first antiferromagnetic films imparts a magnetic bias to the first magnetization free layer in a predetermined direction, and the pair of second antiferromagnetic films imparts a magnetic bias to the second magnetization free layer in a predetermined direction.
摘要翻译： 磁阻头具有包括第一和第二磁化自由层的磁阻膜，夹在第一和第二磁化自由层之间的中间层，底层和保护层，第一电极，第二电极，一对第一反铁磁膜， 和一对第二反铁磁膜。 第一电极与底层连接，第二电极与保护层连接，电极允许电流在基本垂直于磁阻膜的平面的方向上流动。 一对第一反铁磁膜在预定方向上向第一磁化自由层施加磁偏压，并且该对第二反铁磁膜在预定方向上给予第二磁化自由层的磁偏置。
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2.发明授权公开(公告)号：US06847509B2
公开(公告)日：2005-01-25
申请号：US10059153
申请日：2002-01-31
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.
摘要翻译： 磁阻头具有包括第一和第二磁化自由层的磁阻膜，夹在第一和第二磁化自由层之间的中间层，下层和保护层，其以下层的顺序层叠，第一磁化自由层 中间层，第二磁化自由层和保护层，并且布置成基本上垂直于空气轴承表面，并且与底层连接的第一电极和与保护层连接的第二电极，电极允许电流 以基本垂直于该平面的方向流动。 允许第一和第二磁化自由层的每个磁化方向响应于来自介质的信号磁通而独立地变化。 第一和第二磁化自由层根据其磁化方向产生磁阻效应。
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公开(公告)号：US07061732B2
公开(公告)日：2006-06-13
申请号：US10968979
申请日：2004-10-21
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.
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4.发明授权公开(公告)号：US07027273B2
公开(公告)日：2006-04-11
申请号：US10968983
申请日：2004-10-21
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. The intermediate layer includes a stacked film of a metal layer/an oxide layer, a stacked film of a metal layer/a nitride layer, a sandwich film of a metal layer/an oxide layer/a metal layer, or a sandwich film of a metal layer/a nitride layer/a metal layer.
摘要翻译： 磁阻头具有包括第一和第二磁化自由层的磁阻膜，夹在第一和第二磁化自由层之间的中间层，下层和保护层，其以下层的顺序层叠，第一磁化自由层 中间层，第二磁化自由层和保护层，并且布置成基本上垂直于空气轴承表面，并且与底层连接的第一电极和与保护层连接的第二电极，电极允许电流 以基本垂直于该平面的方向流动。 中间层包括金属层/氧化物层的叠层膜，金属层/氮化物层的叠层膜，金属层/氧化物层/金属层的夹层膜，或者是 金属层/氮化物层/金属层。
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公开(公告)号：US20050052794A1
公开(公告)日：2005-03-10
申请号：US10968979
申请日：2004-10-21
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.
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6.发明申请Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus 审中-公开磁阻头和垂直磁记录再现装置公开(公告)号：US20060126228A1
公开(公告)日：2006-06-15
申请号：US11352372
申请日：2006-02-13
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer-sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.
摘要翻译： 磁阻磁头具有包括第一和第二磁化自由层的磁阻膜，夹在第一和第二磁化自由层之间的中间层，底层和保护层，其以下层的顺序堆叠，第一磁化自由度 层，中间层，第二磁化自由层和保护层，并且布置成基本上垂直于空气轴承表面，以及与底层连接的第一电极和与保护层连接的第二电极，电极允许 电流在基本垂直于该平面的方向上流动。 允许第一和第二磁化自由层的每个磁化方向响应于来自介质的信号磁通而独立地变化。 第一和第二磁化自由层根据其磁化方向产生磁阻效应。
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公开(公告)号：US20050052795A1
公开(公告)日：2005-03-10
申请号：US10968983
申请日：2004-10-21
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.
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8.发明授权公开(公告)号：US07443004B2
公开(公告)日：2008-10-28
申请号：US11283873
申请日：2005-11-22
申请人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
发明人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
IPC分类号： H01L29/82
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3903 , G11B2005/3996 , H01F10/30 , H01F10/3227 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.
摘要翻译： 在自旋阀型元件中，将表现出大的自旋相关界面散射的材料的界面插入层（32,34）插入到更靠近磁性固定层（16）或磁性层（20）的位置 非磁性中间层（18）。 可以另外插入非磁性背层（36）作为不与非磁性中间层接触的界面，以通过利用沿被钉扎层和非磁性背层之间的界面处的自旋相关界面散射来增加输出， 自由层和非磁背层。
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9.发明申请公开(公告)号：US20070154740A1
公开(公告)日：2007-07-05
申请号：US11685490
申请日：2007-03-13
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3906 , G11C11/16 , H01F10/324 , H01F10/3268 , H01L43/10 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12465 , Y10T428/12868 , Y10T428/12917 , Y10T428/12951 , Y10T428/265 , Y10T428/32
摘要： A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeaCobNic (where a+b+c=100 at %, and a≦75 at %, b≦75 at %, and c≦63 at %), or formed of an alloy having a body-centered cubic crystal structure.
摘要翻译： 磁阻装置包括磁化固定层，磁化自由层，形成在磁化固定层和磁化自由层之间的非磁性中间层，以及允许感测电流在基本垂直于堆叠平面的方向上流动的电极，包括 磁化钉扎层，非磁性中间层和无磁化层。 磁化固定层和无磁化层中的至少一个基本上由二元或三元合金形成，由二元或三元合金表示，其由式Fe / SUB>（其中a + b + c = 100at％，a≤75at％，b <= 75at％，c <= 63at％），或者由具有体心立方 晶体结构。
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公开(公告)号：US07071522B2
公开(公告)日：2006-07-04
申请号：US10887080
申请日：2004-07-09
申请人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
发明人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3903 , G11B2005/3996 , H01F10/30 , H01F10/3227 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.
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