公开(公告)号：US20160273115A1

公开(公告)日：2016-09-22

申请号：US15071268

申请日：2016-03-16

申请人： ZETIAN MI ,  SHIZHAO FAN ,  BANDAR ALOTAIBI

发明人： ZETIAN MI ,  SHIZHAO FAN ,  BANDAR ALOTAIBI

IPC分类号： C25B9/00 ,  C25B1/00 ,  H01L31/0336 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0352

CPC分类号： C25B9/00 ,  C01B3/042 ,  C25B1/003 ,  Y02E60/364 ,  Y02E60/368

摘要： Important components of direct solar based nanowire enabled chemical processing and electrochemical systems are a high efficiency and highly stable photocathode and 2-photon dual electrodes. The former enables photo-excited electrons that lead to hydrogen generation whereas the later with complementary energy bandgap photoanode and photocathode enables high efficiency, unassisted solar-driven water splitting. Accordingly, it would be beneficial to leverage the high surface areas and self-contained conversion of direct solar illuminated hydrogen generation from such nanowires with multiple junctions for broad solar spectrum absorption by providing monolithically integrated multi-junction photocathodes. It would be further beneficial to provide nanowire based dual-photoelectrode systems that together with a parallel illumination scheme, can fundamentally address these critical challenges. It would be further beneficial for these nanowire based dual-photoelectrode systems to exploit a semiconductor material family that can be tuned across the solar spectrum, can be doped both p-type and n-type and supported large current conduction.

摘要翻译： 直接太阳能纳米线化学处理和电化学系统的重要组成部分是高效率和高度稳定的光电阴极和双光子双电极。 前者能够产生导致氢气产生的光激发电子，而后者具有互补能带隙光电阳极和光电阴极，可以实现高效率，无助太阳能驱动的水分解。 因此，通过提供单片集成的多结光电阴极，利用具有多个连接点的这种纳米线的高表面积和直接太阳能照射氢生成的独立转换是有利的。 提供基于纳米线的双光电子系统将是更有利的，其与平行照明方案一起可以从根本上解决这些关键挑战。 对于这些基于纳米线的双光电子系统来说，利用可以在太阳能光谱上调谐的半导体材料族将是更有益的，可掺杂p型和n型并支持大电流传导。

公开(公告)号：US20160365480A1

公开(公告)日：2016-12-15

申请号：US15177608

申请日：2016-06-09

申请人： ZETIAN MI ,  SONGRUI ZHAO ,  RENJIE WANG

发明人： ZETIAN MI ,  SONGRUI ZHAO ,  RENJIE WANG

IPC分类号： H01L33/06 ,  H01S5/042 ,  H01L33/38 ,  H01L33/00 ,  H01L33/08 ,  H01L33/32

CPC分类号： H01L33/06 ,  H01L33/007 ,  H01L33/08 ,  H01L33/18 ,  H01L33/32 ,  H01S5/021 ,  H01S5/1042 ,  H01S5/32341 ,  H01S5/4006

摘要： GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.

摘要翻译： GaN基纳米线异质结构已经被深入研究用于发光二极管（LED），激光器，太阳能电池和太阳能燃料装置中的应用。 表面电荷特性在器件性能上起主要作用，并且在现有技术中已经通过使用覆盖轴向InGaN纳米线LED异质结构的表面的相对较厚的大带隙AlGaN壳已经被探索并且显示出在减少表面复合引线 以提高载流子注入效率和输出功率。 然而，这些导致设备设计，增长和制造过程的复杂性增加，从而降低产量/性能并增加设备的成本。 因此，已经教导了自组织的InGaN / AlGaN核 - 壳四元纳米线异质结构，其中在生长过程中富含In和Fe的壳自发形成。