公开(公告)号：US20070247634A1

公开(公告)日：2007-10-25

申请号：US11407339

申请日：2006-04-20

申请人： Zhen-Long Chen ,  Peter Weidner ,  Pierre-Yves Guittet ,  Alexander Kasic ,  Barbara Schmidt ,  Anita Klee

发明人： Zhen-Long Chen ,  Peter Weidner ,  Pierre-Yves Guittet ,  Alexander Kasic ,  Barbara Schmidt ,  Anita Klee

IPC分类号： G01B9/02

CPC分类号： G01B11/0625

摘要： An apparatus for monitoring a trench profile of a substrate includes a radiation-emitting unit for irradiating the substrate with infrared radiation. The intensity and/or polarization state of the infrared radiation reflected from the substrate is measured at a multitude of measuring frequencies. An analyzing unit determines the respective reflectance and relative phase change and/or relative amplitude change in relation to the respective measuring frequency. In addition, a reflectance spectrum, a relative phase change spectrum and/or a relative amplitude change spectrum may be obtained. By performing a Fourier transformation of the respective spectrum, a secondary Fourier spectrum is obtained. The secondary Fourier spectrum plots a virtual amplitude against corresponding values of a frequency periodicity that correspond to a substrate depth. Peaks of the virtual amplitude may indicate reflective planes within the substrate at respective depths. Thus, rough sections in the trench profile may be identified without modeling.

摘要翻译： 用于监测衬底的沟槽轮廓的装置包括用于用红外辐射照射衬底的辐射发射单元。 在多个测量频率下测量从衬底反射的红外辐射的强度和/或极化状态。 分析单元确定相应于相应测量频率的相应反射率和相对相位变化和/或相对幅度变化。 此外，可以获得反射光谱，相对相变光谱和/或相对振幅变化光谱。 通过对相应的光谱进行傅立叶变换，获得次傅里叶光谱。 次傅立叶光谱绘制对应于对应于衬底深度的频率周期的相应值的虚拟振幅。 虚拟振幅的峰值可以指示在相应深度处的衬底内的反射平面。 因此，可以在没有建模的情况下识别沟槽轮廓中的粗糙部分。

公开(公告)号：US07372579B2

公开(公告)日：2008-05-13

申请号：US11407339

申请日：2006-04-20

申请人： Zhen-Long Chen ,  Peter Weidner ,  Pierre-Yves Guittet ,  Alexander Kasic ,  Barbara Schmidt ,  Anita Klee

发明人： Zhen-Long Chen ,  Peter Weidner ,  Pierre-Yves Guittet ,  Alexander Kasic ,  Barbara Schmidt ,  Anita Klee

IPC分类号： G01B9/02

CPC分类号： G01B11/0625

摘要： An apparatus for monitoring a trench profile of a substrate includes a radiation-emitting unit for irradiating the substrate with infrared radiation. The intensity and/or polarization state of the infrared radiation reflected from the substrate is measured at a multitude of measuring frequencies. An analyzing unit determines the respective reflectance and relative phase change and/or relative amplitude change in relation to the respective measuring frequency. In addition, a reflectance spectrum, a relative phase change spectrum and/or a relative amplitude change spectrum may be obtained. By performing a Fourier transformation of the respective spectrum, a secondary Fourier spectrum is obtained. The secondary Fourier spectrum plots a virtual amplitude against corresponding values of a frequency periodicity that correspond to a substrate depth. Peaks of the virtual amplitude may indicate reflective planes within the substrate at respective depths. Thus, rough sections in the trench profile may be identified without modeling.

摘要翻译： 用于监测衬底的沟槽轮廓的装置包括用于用红外辐射照射衬底的辐射发射单元。 在多个测量频率下测量从衬底反射的红外辐射的强度和/或极化状态。 分析单元确定相应于相应测量频率的相应反射率和相对相位变化和/或相对幅度变化。 此外，可以获得反射光谱，相对相变光谱和/或相对振幅变化光谱。 通过对相应的光谱进行傅立叶变换，获得次傅里叶光谱。 次傅立叶光谱绘制对应于对应于衬底深度的频率周期的相应值的虚拟振幅。 虚拟振幅的峰值可以指示在相应深度处的衬底内的反射平面。 因此，可以在没有建模的情况下识别沟槽轮廓中的粗糙部分。

公开(公告)号：US20050258365A1

公开(公告)日：2005-11-24

申请号：US11096174

申请日：2005-03-31

申请人： Harald Bloess ,  Uwe Wellhausen ,  Peter Reinig ,  Peter Weidner ,  Pierre-Yves Guittet ,  Ulrich Mantz

发明人： Harald Bloess ,  Uwe Wellhausen ,  Peter Reinig ,  Peter Weidner ,  Pierre-Yves Guittet ,  Ulrich Mantz

IPC分类号： G01B21/16 ,  G01B21/20 ,  G01B21/30 ,  G21K7/00 ,  H01L21/66

CPC分类号： H01L22/12 ,  H01L22/24

摘要： In order to measure a surface profile of a sample, an imprint of the surface profile to be examined is produced in a transfer material. The sample contains processed semiconductor material and is in particular a patterned semiconductor wafer or part of a patterned semiconductor wafer. The transfer material is deformable and curable under suitable ambient conditions. The transfer material may be a thermoplastic material or a material which is deformable as desired after application on a substrate and cures in one case by means of irradiation with photons having a suitable wavelength or alternatively heating. The transfer material may be configured in such a way that the imprint produced is the same size as or alternatively of smaller size than the surface profile. The imprint produced is subsequently measured by known methods.

摘要翻译： 为了测量样品的表面轮廓，在转印材料中产生待检查的表面轮廓的压印。 样品包含经处理的半导体材料，特别是图案化的半导体晶片或图案化的半导体晶片的一部分。 转印材料可在适当的环境条件下变形和固化。 转印材料可以是热塑性材料或在施加到基底上之后根据需要可变形的材料，并且在一种情况下通过用具有合适波长的光子或替代地加热的光子照射来固化。 转印材料可以以这样的方式构造，使得产生的印记与表面轮廓尺寸相同或更小。 随后通过已知方法测量产生的印迹。

公开(公告)号：US07405089B2

公开(公告)日：2008-07-29

申请号：US11096174

申请日：2005-03-31

申请人： Harald Bloess ,  Uwe Wellhausen ,  Peter Reinig ,  Peter Weidner ,  Pierre-Yves Guittet ,  Ulrich Mantz

发明人： Harald Bloess ,  Uwe Wellhausen ,  Peter Reinig ,  Peter Weidner ,  Pierre-Yves Guittet ,  Ulrich Mantz

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： H01L22/12 ,  H01L22/24

摘要： In order to measure a surface profile of a sample, an imprint of the surface profile to be examined is produced in a transfer material. The sample contains processed semiconductor material and is in particular a patterned semiconductor wafer or part of a patterned semiconductor wafer. The transfer material is deformable and curable under suitable ambient conditions. The transfer material may be a thermoplastic material or a material which is deformable as desired after application on a substrate and cures in one case by means of irradiation with photons having a suitable wavelength or alternatively heating. The transfer material may be configured in such a way that the imprint produced is the same size as or alternatively of smaller size than the surface profile. The imprint produced is subsequently measured by known methods.

摘要翻译： 为了测量样品的表面轮廓，在转印材料中产生待检查的表面轮廓的压印。 样品包含经处理的半导体材料，特别是图案化的半导体晶片或图案化的半导体晶片的一部分。 转印材料可在适当的环境条件下变形和固化。 转印材料可以是热塑性材料或在施加到基底上之后根据需要可变形的材料，并且在一种情况下通过用具有合适波长的光子或替代地加热的光子照射来固化。 转印材料可以以这样的方式构造，使得产生的印记与表面轮廓尺寸相同或更小。 随后通过已知方法测量产生的印迹。

公开(公告)号：US20050118735A1

公开(公告)日：2005-06-02

申请号：US10960327

申请日：2004-10-07

申请人： Ulrich Mantz ,  Peter Weidner ,  Ralph Wienhold ,  Pierre-Yves Guittet

发明人： Ulrich Mantz ,  Peter Weidner ,  Ralph Wienhold ,  Pierre-Yves Guittet

IPC分类号： G01B11/22 ,  G01B11/30 ,  G01N21/84 ,  H01L21/00 ,  H01L21/76

CPC分类号： G01N21/8422 ,  G01B11/22 ,  G01B11/30

摘要： One embodiment of the invention provides a method for determining or inspecting a lateral dimension or a volume of a recess in a layer at a surface of a substrate or a property of a material arranged in the recess. The layer having the recess is irradiated with an electromagnetic scanning radiation having a wavelength that is greater than a lateral dimension of the recess, and an electromagnetic response radiation that emerges from an interaction of the scanning radiation with the layer having the recess is received. Characterization data, which characterize the interaction between the layer having the recess and the scanning radiation, are ascertained from the received electromagnetic response radiation, the characterization data mapping the lateral dimension or the volume of the recess or the property of the material arranged in the recess. The lateral dimension or the volume of the recess or the property of the material arranged in the recess is determined or inspected on the basis of the characterization data.

摘要翻译： 本发明的一个实施例提供了一种用于确定或检查衬底表面中的凹部的横向尺寸或体积或布置在凹部中的材料的性质的方法。 具有凹部的层被具有大于凹部的横向尺寸的波长的电磁扫描辐射照射，并且接收从扫描辐射与具有凹部的层的相互作用而出现的电磁响应辐射。 表征具有凹陷的层与扫描辐射之间的相互作用的表征数据是从接收到的电磁响应辐射确定的，表征凹槽的横向尺寸或体积或者设置在凹槽中的材料的性质的特征数据 。 基于表征数据确定或检查凹槽的横向尺寸或体积或布置在凹部中的材料的性质。

公开(公告)号：US20080297765A1

公开(公告)日：2008-12-04

申请号：US11755063

申请日：2007-05-30

申请人： Peter Weidner ,  Alexander Kasic ,  Elke Gehring

发明人： Peter Weidner ,  Alexander Kasic ,  Elke Gehring

IPC分类号： G01J3/00

CPC分类号： G01N21/956 ,  G01N21/21 ,  G01N21/274 ,  G01N21/41 ,  G01N21/55

摘要： An apparatus includes an evaluating unit and a peak detection unit. The peak detection unit may be configured to determine at least one peak parameter of a peak in a Fourier transformed reflection spectrum of infrared radiation reflected off a sample that may comprise trench structures. The evaluation unit may be configured to determine from the at least one peak parameter and from a correction value containing information about an effective refractive index of the sample, a trench parameter of the trench structures.

摘要翻译： 一种装置包括评估单元和峰值检测单元。 峰值检测单元可以被配置为确定从可能包括沟槽结构的样品反射的红外辐射的傅立叶变换反射光谱中的峰值的至少一个峰值参数。 评估单元可以被配置为根据至少一个峰值参数和从包含关于样品的有效折射率的信息的修正值确定沟槽结构的沟槽参数。

公开(公告)号：US07773232B2

公开(公告)日：2010-08-10

申请号：US11755063

申请日：2007-05-30

申请人： Peter Weidner ,  Alexander Kasic ,  Elke Gehring

发明人： Peter Weidner ,  Alexander Kasic ,  Elke Gehring

IPC分类号： G01B11/02

CPC分类号： G01N21/956 ,  G01N21/21 ,  G01N21/274 ,  G01N21/41 ,  G01N21/55

摘要： An apparatus includes an evaluating unit and a peak detection unit. The peak detection unit is configured to determine at least one peak parameter of a peak in a Fourier transformed reflection spectrum of infrared radiation reflected off a sample that may comprise trench structures. The evaluation unit is configured to determine from the at least one peak parameter and from a correction value containing information about an effective refractive index of the sample, a trench parameter of the trench structures.

摘要翻译： 一种装置包括评估单元和峰值检测单元。 峰值检测单元被配置为确定从可能包括沟槽结构的样品反射的红外辐射的傅立叶变换反射光谱中的峰值的至少一个峰值参数。 评估单元被配置为根据至少一个峰值参数和从包含样本的有效折射率的信息的修正值确定沟槽结构的沟槽参数。

公开(公告)号：US07152461B2

公开(公告)日：2006-12-26

申请号：US11060571

申请日：2005-02-17

申请人： Dietmar Temmler ,  Peter Weidner

发明人： Dietmar Temmler ,  Peter Weidner

IPC分类号： G01B5/28

CPC分类号： G01B21/18 ,  G01G19/00 ,  G01N5/04

摘要： The invention relates to a method for determination of the depth of depressions which are formed in a mount substrate. According to the invention, an essentially uniform layer of a wetting agent is applied, which contains depressions, on a surface of the mount substrate, a time profile of the decrease in weight of the mount substrate is recorded, and the recorded time profile of the decrease in weight of the mount substrate is evaluated. The invention also relates to a measurement apparatus.

摘要翻译： 本发明涉及一种用于确定在安装基板中形成的凹陷深度的方法。 根据本发明，在安装基板的表面上施加基本上均匀的润湿剂层，其含有凹陷，记录安装基板的重量减小的时间曲线，记录时间曲线 评估安装基板的重量的减小。 本发明还涉及一种测量装置。

公开(公告)号：US4417518A

公开(公告)日：1983-11-29

申请号：US24428

申请日：1979-03-08

申请人： Rainer Siebert ,  Dietmar Stutzle ,  Peter Weidner

发明人： Rainer Siebert ,  Dietmar Stutzle ,  Peter Weidner

IPC分类号： F42C9/14 ,  F42C11/02 ,  F42C13/08

CPC分类号： F42C9/148 ,  F42C11/02 ,  F42C13/08

摘要： A detonating arrangement for missiles in which, as a result of a change of the magnetic field of a permanent magnet at an approach to a ferromagnetic object, a voltage will be induced in an induction element, which is transmissible to the control input of electronic evaluating circuit powering a detonating medium.

摘要翻译： 一种用于导弹的引爆装置，其中由于在接近铁磁物体时永久磁铁的磁场发生变化的结果，感应元件中将产生电压，该感应元件可传输到电子评估的控制输入 电路为引爆介质供电。

公开(公告)号：US4368670A

公开(公告)日：1983-01-18

申请号：US173335

申请日：1980-07-29

申请人： Peter Weidner

发明人： Peter Weidner

IPC分类号： F42C11/02 ,  F42C19/12

CPC分类号： F42C19/12 ,  F42C11/02

摘要： A detonator for the electrical ignition or detonation of detonating materials, such as explosives. The detonator incorporates at least one piezo element which is at least partially encompassed by a secondary explosive. The piezo element is subjected to a steeply rising voltage impulse and thereby rapidly expanded so as to generate a shock wave which will detonate the secondary explosive.

摘要翻译： 用于引爆爆炸物等引爆材料的雷管。 雷管包括至少一个至少部分被二次炸药包围的压电元件。 压电元件经受急剧上升的电压脉冲，从而迅速膨胀，以产生将引爆二次爆炸物的冲击波。