Patterning of organic semiconductor materials
    4.
    发明授权
    Patterning of organic semiconductor materials 有权
    有机半导体材料图案化

    公开(公告)号:US09520563B2

    公开(公告)日:2016-12-13

    申请号:US12743772

    申请日:2008-11-20

    IPC分类号: H01L29/08 H01L51/00 H01L51/05

    摘要: Organic semiconductor material can be patterned from a solution onto a substrate by selectively wetting the substrate with the solution while applying a mechanical disturbance (such as stirring the solution while the substrate is immersed, or wiping the solution on the substrate). The organic semiconductor material can then be precipitated out of the solution, for example to bridge gaps between source and drain electrodes to form transistor devices. In some embodiments, the solution containing the organic semiconductor material can be mixed in an immiscible host liquid. This can allow the use of higher concentration solutions while also using less of the organic semiconductor material.

    摘要翻译: 通过在施加机械扰动(例如在浸渍基材时搅拌溶液或将基板上的溶液擦拭)的机械干扰(例如搅拌溶液),通过在溶液中选择性地润湿基材,可以将有机半导体材料从溶液图案化。 然后可以将有机半导体材料从溶液中沉淀出来,例如以桥接源极和漏极之间的间隙以形成晶体管器件。 在一些实施方案中,含有有机半导体材料的溶液可以混合在不混溶的主体液体中。 这可以允许使用更高浓度的溶液,同时也使用少量的有机半导体材料。

    PATTERNING OF ORGANIC SEMICONDUCTOR MATERIALS
    5.
    发明申请
    PATTERNING OF ORGANIC SEMICONDUCTOR MATERIALS 有权
    有机半导体材料的构图

    公开(公告)号:US20100308309A1

    公开(公告)日:2010-12-09

    申请号:US12743772

    申请日:2008-11-20

    IPC分类号: H01L51/00 H01L51/40 G03F7/20

    摘要: Organic semiconductor material can be patterned from a solution onto a substrate by selectively wetting the substrate with the solution while applying a mechanical disturbance (such as stirring the solution while the substrate is immersed, or wiping the solution on the substrate). The organic semiconductor material can then be precipitated out of the solution, for example to bridge gaps between source and drain electrodes to form transistor devices. In some embodiments, the solution containing the organic semiconductor material can be mixed in an immiscible host liquid. This can allow the use of higher concentration solutions while also using less of the organic semiconductor material.

    摘要翻译: 通过在施加机械扰动(例如在浸渍基材时搅拌溶液或将基板上的溶液擦拭)的机械干扰(例如搅拌溶液),通过在溶液中选择性地润湿基材,可以将有机半导体材料从溶液图案化。 然后可以将有机半导体材料从溶液中沉淀出来,例如以桥接源极和漏极之间的间隙以形成晶体管器件。 在一些实施方案中,含有有机半导体材料的溶液可以混合在不混溶的主体液体中。 这可以允许使用更高浓度的溶液,同时也使用少量的有机半导体材料。

    ORGANIC SEMICONDUCTORS AND GROWTH APPROACHES THEREFOR
    6.
    发明申请
    ORGANIC SEMICONDUCTORS AND GROWTH APPROACHES THEREFOR 有权
    有机半导体及其增长方法

    公开(公告)号:US20090294760A1

    公开(公告)日:2009-12-03

    申请号:US12127323

    申请日:2008-05-27

    IPC分类号: H01L51/40 H01L51/10

    摘要: Organic semiconductor devices exhibit desirable mobility characteristics. In connection with various example embodiments, a monolayer of methyl-terminated molecules exhibits density characteristics that are sufficient to promote two-dimensional growth of organic semiconductor material formed thereupon. In some applications, the methyl-terminated molecules are sufficiently dense to dominate inter-layer interactions between layers of the organic semiconductor material.

    摘要翻译: 有机半导体器件具有理想的移动特性。 关于各种示例性实施方案,甲基封端的分子的单层表现出足以促进在其上形成的有机半导体材料的二维生长的密度特性。 在一些应用中,甲基封端的分子足够致密以支配有机半导体材料的层之间的层间相互作用。

    Organic semiconductors and growth approaches therefor
    7.
    发明授权
    Organic semiconductors and growth approaches therefor 有权
    有机半导体及其生长方法

    公开(公告)号:US08119445B2

    公开(公告)日:2012-02-21

    申请号:US12127323

    申请日:2008-05-27

    IPC分类号: H01L21/44

    摘要: Organic semiconductor devices exhibit desirable mobility characteristics. In connection with various example embodiments, a monolayer of methyl-terminated molecules exhibits density characteristics that are sufficient to promote two-dimensional growth of organic semiconductor material formed thereupon. In some applications, the methyl-terminated molecules are sufficiently dense to dominate inter-layer interactions between layers of the organic semiconductor material.

    摘要翻译: 有机半导体器件具有理想的移动特性。 关于各种示例性实施方案,甲基封端的分子的单层表现出足以促进在其上形成的有机半导体材料的二维生长的密度特性。 在一些应用中,甲基封端的分子足够致密以支配有机半导体材料的层之间的层间相互作用。