公开(公告)号：US09753335B2

公开(公告)日：2017-09-05

申请号：US13380989

申请日：2011-04-22

申请人： Zhenyu Xie ,  Xu Chen ,  Chunping Long ,  Shaoying Xu

发明人： Zhenyu Xie ,  Xu Chen ,  Chunping Long ,  Shaoying Xu

IPC分类号： G02F1/1343 ,  G02F1/1362

CPC分类号： G02F1/1343 ,  G02F1/136213 ,  G02F1/136286

摘要： Embodiments of the invention disclose an array substrate and a manufacturing method thereof and a liquid crystal display. In the array substrate, an additional electrode is formed above a gate line, the additional electrode and the gate line are spaced from each other by a gate insulation layer, and the additional electrode is connected electrically with the common electrode line; pixel electrode extends to over the additional electrode and is overlapped with the additional electrode, the overlapped portion of the pixel electrode and both the additional electrode and the common electrode line forms a storage capacitor. The liquid crystal display according to the embodiment of the invention comprises the above array substrate.

公开(公告)号：US20120099041A1

公开(公告)日：2012-04-26

申请号：US13380989

申请日：2011-04-22

申请人： Zhenyu Xie ,  Xu Chen ,  Chunping Long ,  Shaoying Xu

发明人： Zhenyu Xie ,  Xu Chen ,  Chunping Long ,  Shaoying Xu

IPC分类号： G02F1/136 ,  H01L21/336 ,  H01L29/786

CPC分类号： G02F1/1343 ,  G02F1/136213 ,  G02F1/136286

摘要： Embodiments of the invention disclose an array substrate and a manufacturing method thereof and a liquid crystal display. In the array substrate, an additional electrode is formed above a gate line, the additional electrode and the gate line are spaced from each other by a gate insulation layer, and the additional electrode is connected electrically with the common electrode line; pixel electrode extends to over the additional electrode and is overlapped with the additional electrode, the overlapped portion of the pixel electrode and both the additional electrode and the common electrode line forms a storage capacitor. The liquid crystal display according to the embodiment of the invention comprises the above array substrate.

摘要翻译： 本发明的实施例公开了阵列基板及其制造方法和液晶显示器。 在阵列基板中，在栅极线之上形成附加电极，附加电极和栅极线通过栅极绝缘层彼此间隔开，并且附加电极与公共电极线电连接; 像素电极延伸到附加电极的上方并与附加电极重叠，像素电极的重叠部分以及附加电极和公共电极线两者形成存储电容器。 根据本发明实施例的液晶显示器包括上述阵列基板。

公开(公告)号：US20130143350A1

公开(公告)日：2013-06-06

申请号：US13704769

申请日：2012-11-08

申请人： Shaoying Xu ,  Zhenyu Xie ,  Xu Chen

发明人： Shaoying Xu ,  Zhenyu Xie ,  Xu Chen

IPC分类号： H01L31/18

CPC分类号： H01L31/18 ,  H01L27/14658 ,  H01L27/14692

摘要： An embodiment of the invention discloses a manufacture method of a sensor comprising: preparing gate scanning lines on a substrate; depositing a gate insulating layer on the gate scanning lines; sequentially depositing a gate insulation thin film, an active layer thin film, an ohmic contact layer thin film, a first conducting layer thin film and a photoelectric conversion layer thin film, and after the depositing, processing a lamination structure of the thin films with a gray-tone mask plate to obtain switch devices and photoelectric sensing devices; and then sequentially preparing a first passivation layer, bias lines and a second passivation layer.

摘要翻译： 本发明的实施例公开了一种传感器的制造方法，包括：在基板上准备栅极扫描线; 在栅极扫描线上沉积栅极绝缘层; 依次沉积栅极绝缘薄膜，有源层薄膜，欧姆接触层薄膜，第一导电层薄膜和光电转换层薄膜，并且在沉积之后，将薄膜的层叠结构用 灰色蒙版板获得开关器件和光电传感器件; 然后顺序地制备第一钝化层，偏置线和第二钝化层。

公开(公告)号：US20140077212A1

公开(公告)日：2014-03-20

申请号：US13984626

申请日：2012-11-15

申请人： Tiansheng Li ,  Changjiang Yan ,  Shaoying Xu ,  Zhenyu Xie

发明人： Tiansheng Li ,  Changjiang Yan ,  Shaoying Xu ,  Zhenyu Xie

IPC分类号： H01L27/146

CPC分类号： H01L27/14643 ,  H01L27/14632 ,  H01L27/14658 ,  H01L27/14687 ,  H01L27/14689

摘要： Embodiments of the present invention disclose a sensor and a method for manufacturing the same, the sensor comprising a plurality of sensing units arranged in array, each of which comprises a thin film transistor device and a photodiode sensor device and the photodiode sensor device comprising: a receiving electrode connected with a drain of the thin film transistor device, a photodiode located on the receiving electrode and covering the thin film transistor device, a transparent electrode on the photodiode and a biasing line connected with the transparent electrode.

摘要翻译： 本发明的实施例公开了一种传感器及其制造方法，该传感器包括排列成阵列的多个检测单元，每个检测单元包括薄膜晶体管器件和光电二极管传感器器件，光电二极管传感器器件包括： 与该薄膜晶体管器件的漏极连接的接收电极，位于接收电极上并覆盖薄膜晶体管器件的光电二极管上的透明电极和与透明电极连接的偏置线。

公开(公告)号：US20140103334A1

公开(公告)日：2014-04-17

申请号：US13983868

申请日：2013-02-27

申请人： Zhenyu Xie ,  Shaoying Xu ,  Changjiang Yan ,  Tiansheng Li

发明人： Zhenyu Xie ,  Shaoying Xu ,  Changjiang Yan ,  Tiansheng Li

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L23/00 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L23/564 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

摘要： An oxide semiconductor thin film transistor, a manufacturing method and a display device thereof are disclosed. An oxide semiconductor thin film transistor comprises a gate insulating layer (22), an oxide semiconductor layer (24) and a blocking layer (25), wherein a first transition layer (23) is formed between the gate insulating layer (22) and the oxide semiconductor layer (24), the oxygen content of the first transition layer (23) is higher than the oxygen content of the oxide semiconductor layer (24). The oxide semiconductor thin film transistor enhances the interface characteristic and the lattice matching between the oxide semiconductor layer (24) and the blocking layer (25) to improve the stability of the thin film transistor better.

摘要翻译： 公开了一种氧化物半导体薄膜晶体管，其制造方法和显示装置。 一种氧化物半导体薄膜晶体管，包括栅极绝缘层（22），氧化物半导体层（24）和阻挡层（25），其中第一过渡层（23）形成在栅极绝缘层（22）和 氧化物半导体层（24）中，第一过渡层（23）的氧含量高于氧化物半导体层（24）的氧含量。 氧化物半导体薄膜晶体管增强了氧化物半导体层（24）和阻挡层（25）之间的界面特性和晶格匹配，以更好地提高薄膜晶体管的稳定性。