MANUFACTURE METHOD OF SENSOR
    1.
    发明申请
    MANUFACTURE METHOD OF SENSOR 有权
    传感器的制造方法

    公开(公告)号:US20130143350A1

    公开(公告)日:2013-06-06

    申请号:US13704769

    申请日:2012-11-08

    IPC分类号: H01L31/18

    摘要: An embodiment of the invention discloses a manufacture method of a sensor comprising: preparing gate scanning lines on a substrate; depositing a gate insulating layer on the gate scanning lines; sequentially depositing a gate insulation thin film, an active layer thin film, an ohmic contact layer thin film, a first conducting layer thin film and a photoelectric conversion layer thin film, and after the depositing, processing a lamination structure of the thin films with a gray-tone mask plate to obtain switch devices and photoelectric sensing devices; and then sequentially preparing a first passivation layer, bias lines and a second passivation layer.

    摘要翻译: 本发明的实施例公开了一种传感器的制造方法,包括:在基板上准备栅极扫描线; 在栅极扫描线上沉积栅极绝缘层; 依次沉积栅极绝缘薄膜,有源层薄膜,欧姆接触层薄膜,第一导电层薄膜和光电转换层薄膜,并且在沉积之后,将薄膜的层叠结构用 灰色蒙版板获得开关器件和光电传感器件; 然后顺序地制备第一钝化层,偏置线和第二钝化层。

    ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND LIQUID CRYSTAL DISPLAY
    3.
    发明申请
    ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND LIQUID CRYSTAL DISPLAY 有权
    阵列基板,其制造方法和液晶显示

    公开(公告)号:US20120099041A1

    公开(公告)日:2012-04-26

    申请号:US13380989

    申请日:2011-04-22

    摘要: Embodiments of the invention disclose an array substrate and a manufacturing method thereof and a liquid crystal display. In the array substrate, an additional electrode is formed above a gate line, the additional electrode and the gate line are spaced from each other by a gate insulation layer, and the additional electrode is connected electrically with the common electrode line; pixel electrode extends to over the additional electrode and is overlapped with the additional electrode, the overlapped portion of the pixel electrode and both the additional electrode and the common electrode line forms a storage capacitor. The liquid crystal display according to the embodiment of the invention comprises the above array substrate.

    摘要翻译: 本发明的实施例公开了阵列基板及其制造方法和液晶显示器。 在阵列基板中,在栅极线之上形成附加电极,附加电极和栅极线通过栅极绝缘层彼此间隔开,并且附加电极与公共电极线电连接; 像素电极延伸到附加电极的上方并与附加电极重叠,像素电极的重叠部分以及附加电极和公共电极线两者形成存储电容器。 根据本发明实施例的液晶显示器包括上述阵列基板。

    SENSOR AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    SENSOR AND METHOD FOR MANUFACTURING THE SAME 有权
    传感器及其制造方法

    公开(公告)号:US20140077212A1

    公开(公告)日:2014-03-20

    申请号:US13984626

    申请日:2012-11-15

    IPC分类号: H01L27/146

    摘要: Embodiments of the present invention disclose a sensor and a method for manufacturing the same, the sensor comprising a plurality of sensing units arranged in array, each of which comprises a thin film transistor device and a photodiode sensor device and the photodiode sensor device comprising: a receiving electrode connected with a drain of the thin film transistor device, a photodiode located on the receiving electrode and covering the thin film transistor device, a transparent electrode on the photodiode and a biasing line connected with the transparent electrode.

    摘要翻译: 本发明的实施例公开了一种传感器及其制造方法,该传感器包括排列成阵列的多个检测单元,每个检测单元包括薄膜晶体管器件和光电二极管传感器器件,光电二极管传感器器件包括: 与该薄膜晶体管器件的漏极连接的接收电极,位于接收电极上并覆盖薄膜晶体管器件的光电二极管上的透明电极和与透明电极连接的偏置线。

    Oxide Semiconductor Thin Film Transistor, Manufacturing Method, And Display Device Thereof
    5.
    发明申请
    Oxide Semiconductor Thin Film Transistor, Manufacturing Method, And Display Device Thereof 有权
    氧化物半导体薄膜晶体管,制造方法及其显示装置

    公开(公告)号:US20140103334A1

    公开(公告)日:2014-04-17

    申请号:US13983868

    申请日:2013-02-27

    摘要: An oxide semiconductor thin film transistor, a manufacturing method and a display device thereof are disclosed. An oxide semiconductor thin film transistor comprises a gate insulating layer (22), an oxide semiconductor layer (24) and a blocking layer (25), wherein a first transition layer (23) is formed between the gate insulating layer (22) and the oxide semiconductor layer (24), the oxygen content of the first transition layer (23) is higher than the oxygen content of the oxide semiconductor layer (24). The oxide semiconductor thin film transistor enhances the interface characteristic and the lattice matching between the oxide semiconductor layer (24) and the blocking layer (25) to improve the stability of the thin film transistor better.

    摘要翻译: 公开了一种氧化物半导体薄膜晶体管,其制造方法和显示装置。 一种氧化物半导体薄膜晶体管,包括栅极绝缘层(22),氧化物半导体层(24)和阻挡层(25),其中第一过渡层(23)形成在栅极绝缘层(22)和 氧化物半导体层(24)中,第一过渡层(23)的氧含量高于氧化物半导体层(24)的氧含量。 氧化物半导体薄膜晶体管增强了氧化物半导体层(24)和阻挡层(25)之间的界面特性和晶格匹配,以更好地提高薄膜晶体管的稳定性。

    Array substrate and manufacturing method
    7.
    发明授权
    Array substrate and manufacturing method 有权
    阵列基板及制造方法

    公开(公告)号:US08236628B2

    公开(公告)日:2012-08-07

    申请号:US12888171

    申请日:2010-09-22

    IPC分类号: H01L21/00 H01L21/84

    CPC分类号: H01L33/08 H01L27/124

    摘要: A method of manufacturing an array substrate comprising: forming a data line and a gate line which are crossed with each other and a gate electrode on a base substrate, and the data line is discontinuously disposed so as to be separated from the gate line or the gate line is discontinuously disposed so as to be separated from the data line; forming an active layer and a gate insulating layer including bridge via holes and a source electrode via hole on the base substrate, and the bridge via holes are located at positions respectively corresponding to adjacent discontinuous sections of the data line or adjacent discontinuous sections of the gate line, and the source electrode via hole is located at a position corresponding to the data line; and forming a pixel electrode, a source electrode, a drain electrode and a bridge line on the base substrate, and the pixel electrode and the drain electrode are formed integrally, and the source electrode is connected to the data line through the source electrode via hole, and the bridge line connects the adjacent discontinuous sections of the data line or the adjacent discontinuous sections of the gate line through the bridge via holes.

    摘要翻译: 一种制造阵列基板的方法,包括:形成彼此交叉的数据线和栅极线以及在基底基板上的栅电极,并且数据线被不连续地设置成与栅极线或 栅极线不连续地设置成与数据线分离; 形成有源层和栅极绝缘层,栅极绝缘层包括基底基板上的桥接通孔和源极电极通孔,桥接通孔分别位于数据线的相邻不连续部分或栅极的相邻不连续部分 源极电极通孔位于与数据线对应的位置; 并且在基底基板上形成像素电极,源电极,漏电极和桥接线,并且像素电极和漏电极一体地形成,源电极通过源电极通孔连接到数据线 并且桥接线通过桥式通孔连接数据线的相邻不连续部分或栅极线的相邻不连续部分。

    TFT-LCD array substrate and method of manufacturing the same
    8.
    发明授权
    TFT-LCD array substrate and method of manufacturing the same 有权
    TFT-LCD阵列基板及其制造方法

    公开(公告)号:US08199270B2

    公开(公告)日:2012-06-12

    申请号:US12648480

    申请日:2009-12-29

    IPC分类号: G02F1/136

    摘要: The present invention relates to a method of manufacturing an array substrate of TFT-LCD. The method includes the following steps. In step 1, a gate metal thin film is deposited on a substrate and patterned into gate electrodes and gate lines by a first patterning process. In step 2, a gate insulation layer, a semiconductor layer and a barrier layer are subsequently deposited on the resultant structure of step 1 and are patterned into gate insulation layer pattern, semiconductor layer pattern and barrier layer pattern by a second patterning process, wherein the barrier layer is used for preventing the semiconductor layer at the TFT channel from being etched. In step 3, an ohmic contact layer, a transparent conductive layer, a source drain metal layer and a passivation layer are subsequently deposited on the resultant structure of step 2, and are patterned into ohmic contact layer pattern, pixel electrodes, data lines, source electrodes, drain electrodes and passivation layer pattern in a patterning process.

    摘要翻译: 本发明涉及TFT-LCD阵列基板的制造方法。 该方法包括以下步骤。 在步骤1中,栅极金属薄膜沉积在衬底上并通过第一图案化工艺图案化成栅电极和栅极线。 在步骤2中,随后将栅极绝缘层,半导体层和阻挡层沉积在步骤1的结果上,并通过第二图案化工艺图案化为栅极绝缘层图案,半导体层图案和势垒层图案,其中 阻挡层用于防止TFT沟道处的半导体层被蚀刻。 在步骤3中,随后在步骤2的合成结构上沉积欧姆接触层,透明导电层,源极漏极金属层和钝化层,并将其图案化为欧姆接触层图案,像素电极,数据线,源极 电极,漏电极和钝化层图案。

    Touch screen, color filter substrate and manufacturing methods thereof
    9.
    发明授权
    Touch screen, color filter substrate and manufacturing methods thereof 有权
    触摸屏,滤色器基板及其制造方法

    公开(公告)号:US08941596B2

    公开(公告)日:2015-01-27

    申请号:US12782218

    申请日:2010-05-18

    IPC分类号: G06F3/041 G06F3/045

    CPC分类号: G06F3/045 G06F3/0414

    摘要: A touch screen and a manufacturing method thereof, and a color filter substrate and a manufacturing method thereof are provided in the invention. The touch screen comprises a substrate, a plurality of touch regions defined by a plurality of first signal lines and a plurality of second signal lines are provided on the substrate. In each touch region, the first signal line is connected with a first piezoelectric switch, the second signal line is connected with a second piezoelectric switch, when the touch region is touched by a force the first piezoelectric switch and the second piezoelectric switch are turned on and transfer voltage signals respectively via the first signal line and the second signal line to determine the coordinate of the touched touch region.

    摘要翻译: 本发明提供了触摸屏及其制造方法以及滤色器基板及其制造方法。 触摸屏包括基板,在基板上设置由多条第一信号线和多条第二信号线限定的多个触摸区域。 在每个触摸区域中,第一信号线与第一压电开关连接,第二信号线与第二压电开关连接,当触摸区域被第一压电开关和第二压电开关导通的力接触时 并且分别经由第一信号线和第二信号线传送电压信号,以确定触摸的触摸区域的坐标。

    TFT-LCD array substrate
    10.
    发明授权
    TFT-LCD array substrate 有权
    TFT-LCD阵列基板

    公开(公告)号:US08497964B2

    公开(公告)日:2013-07-30

    申请号:US12703315

    申请日:2010-02-10

    IPC分类号: G02F1/141 G02F1/1343

    摘要: A thin film transistor liquid crystal display (TFT-LCD) array substrate and a method for forming the same. The thin film transistor liquid crystal display (TFT-LCD) device, comprising gate lines and data lines that intersecting with each other to define pixel regions, wherein a pixel electrode and a thin film transistor are formed in each of the pixel regions, and wherein the data lines each have a mirror-symmetry structure so that coupling capacitance between one data line and the pixel electrodes in an upper adjacent pixel region and a lower pixel region that are adjacent changes oppositely.

    摘要翻译: 薄膜晶体管液晶显示器(TFT-LCD)阵列基板及其形成方法。 薄膜晶体管液晶显示器(TFT-LCD)器件,包括彼此相交以限定像素区域的栅极线和数据线,其中像素电极和薄膜晶体管形成在每个像素区域中,并且其中 数据线各自具有镜像对称结构,使得一个数据线与相邻的上邻近像素区域和下部像素区域中的像素电极之间的耦合电容相反地变化。