利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

19 条记录 (耗时 0.018 秒)

    Process for growing a carbon film
    3.
    发明授权
    Process for growing a carbon film 失效
    生长碳膜的工艺

    公开(公告)号：US07070651B1

    公开(公告)日：2006-07-04

    申请号：US08859960

    申请日：1997-05-21

    申请人： Zhidan Li Tolt ,  Zvi Yaniv ,  Richard Lee Fink

    发明人： Zhidan Li Tolt ,  Zvi Yaniv ,  Richard Lee Fink

    IPC分类号： C30B29/04

    CPC分类号： B82Y10/00 ,  H01J9/025

    摘要： A film (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing etching of a substrate and then depositing the film. The etching step creates nucleation sites on the substrate for the film deposition process. With this process patterning of the emitting film is avoided. A field emitter device can be manufactured with such a film.

    摘要翻译： 可以在计算机显示器内使用的用于场致发射器件的膜（碳和/或金刚石）通过利用蚀刻基底然后沉积膜的方法产生。 蚀刻步骤在用于薄膜沉积工艺的基底上产生成核位点。 通过该过程避免了发光膜的图案化。 可以制造具有这种膜的场发射器装置。

    Cold cathode
    4.
    发明授权
    Cold cathode 失效
    冷阴极

    公开(公告)号：US06819035B2

    公开(公告)日：2004-11-16

    申请号：US10733714

    申请日：2003-12-11

    申请人： Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt

    发明人： Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt

    IPC分类号： H01J1304

    CPC分类号： H01J1/304 ,  B82Y10/00 ,  B82Y15/00 ,  H01J2201/30457

    摘要： A carbon film having an area of insulating material surrounded by an area of conducing material, and an area of material between the area of insulating material and the area of conducting material having a graded dielectric constant which varies from high to low from the area of insulating material to the area of conducting material.

    摘要翻译： 具有由导电材料区域包围的绝缘材料区域的碳膜，以及绝缘材料区域和导电材料区域之间的材料区域，其具有从绝缘区域的高低变化的梯度介电常数 材料到导电材料区域。

    Field emission material
    5.
    发明授权
    Field emission material 失效
    场发射材料

    公开(公告)号：US06664722B1

    公开(公告)日：2003-12-16

    申请号：US09594874

    申请日：2000-06-15

    申请人： Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt ,  Leif Thuesen

    发明人： Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt ,  Leif Thuesen

    IPC分类号： H01J113

    CPC分类号： B82Y15/00 ,  B82Y10/00 ,  H01J1/304

    摘要： A carbon film having an area of insulating material surrounded by an area of conducing material, and an area of material between the area of insulating material and the area of conducting material having a graded dielectric constant which varies from high to low from the area of insulating material to the area of conducting material. An emission site on the carbon film will emit electrons as a function of time, and as a function of distance across an emission site area.

    摘要翻译： 具有由导电材料区域包围的绝缘材料区域的碳膜，以及绝缘材料区域和导电材料区域之间的材料区域，其具有从绝缘区域的高低变化的梯度介电常数 材料到导电材料区域。 碳膜上的发射部位将作为时间的函数发射电子，并且作为发射场地区域的距离的函数。

    Cold cathode carbon film
    6.
    发明授权
    Cold cathode carbon film 有权
    冷阴极碳膜

    公开(公告)号：US06181056B2

    公开(公告)日：2001-01-30

    申请号：US09174500

    申请日：1998-10-16

    申请人： Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt

    发明人： Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt

    IPC分类号： H01J102

    CPC分类号： H01J1/304 ,  B82Y10/00 ,  H01J2201/30457 ,  H01J2201/3165

    摘要： A carbon film having an area of insulating material surrounded by an area of conducting material, and an area of material between the area of insulating material and the area of conducting material having a graded dielectric constant which varies from high to low from the area of insulating material to the area of conducting material.

    摘要翻译： 具有被导电材料区域包围的绝缘材料区域的碳膜以及绝缘材料区域与导电材料区域之间的材料区域具有梯度介电常数，从绝缘区域的高到低变化 材料到导电材料区域。

    Surface treatment process used in growing a carbon film
    7.
    发明授权
    Surface treatment process used in growing a carbon film 失效
    用于生长碳膜的表面处理工艺

    公开(公告)号：US06630023B2

    公开(公告)日：2003-10-07

    申请号：US09754558

    申请日：2001-01-04

    申请人： Zhidan Li Tolt ,  Zvi Yaniv ,  Richard Lee Fink

    发明人： Zhidan Li Tolt ,  Zvi Yaniv ,  Richard Lee Fink

    IPC分类号： C30B2504

    CPC分类号： B82Y10/00 ,  H01J1/304 ,  H01J9/025

    摘要： A film (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing treatment of a substrate and then depositing the film. The treatment step creates nucleation and growth sites on the substrate for the film deposition process and promotes election emission of the deposited film. With this process, a patterned emission can be achieved without post-deposition processing of the film. A field emitter device can be manufactured with such a film.

    摘要翻译： 可以在计算机显示器内使用的用于场致发射器件的膜（碳和/或金刚石）通过利用处理衬底然后沉积膜的方法产生。 处理步骤在用于膜沉积工艺的衬底上产生成核和生长位点并促进沉积膜的选择发射。 通过该工艺，可以实现图案化的发射，而不需要对膜进行后期沉积处理。 可以制造具有这种膜的场发射器装置。

    Low voltage electron source with self aligned gate apertures, and luminous display using the electron source
    9.
    发明授权
    Low voltage electron source with self aligned gate apertures, and luminous display using the electron source 失效
    具有自对准栅极孔径的低电压电子源，以及使用电子源的发光显示器

    公开(公告)号：US07459839B2

    公开(公告)日：2008-12-02

    申请号：US10707342

    申请日：2003-12-05

    申请人： Zhidan Li Tolt

    发明人： Zhidan Li Tolt

    IPC分类号： H01J9/02

    CPC分类号： H01J3/022 ,  B82Y10/00 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30469

    摘要： An electron source include a first cathode electrode disposed over a substrate and terminated to provide electrons; an emitter layer disposed over the cathode electrode and formed from one or plurality vertically aligned and mono-dispersed nano-structures that are truncated to the same length, embedded in a solid matrix and protruding above the surface for emitting electrons; an insulator disposed over the emitter layer and having one or plurality of apertures, each is self-aligned with and exposes one nano-structure in the emitter layer; and a second gate electrode disposed over the insulator, having one or plurality of apertures self-aligned with the apertures in the insulator and terminated to extract electrons from the exposed nano-structures through the apertures. The gate aperture is substantially less than one micrometer and the gated nano-structures can have a density on the order of 108/cm2. Such an electron source can be modulated with an extra low voltage, emits electrons with high current density and high uniformity, and operates with high energy-efficiency and long lifetime.

    摘要翻译： 电子源包括设置在衬底上并终止以提供电子的第一阴极电极; 发射极层，设置在阴极上并由一个或多个垂直取向和单分散的纳米结构形成，该纳米结构被截短到相同的长度，嵌入固体基质中并突出在表面上用于发射电子; 设置在发射极层上并具有一个或多个孔的绝缘体，每个孔与发射极层中的一个纳米结构自对准并且暴露出一个纳米结构; 以及设置在所述绝缘体上方的第二栅电极，具有与所述绝缘体中的孔自对准的一个或多个孔，并且终止以从所述暴露的纳米结构通过所述孔提取电子。 栅极孔径基本上小于1微米，并且门控纳米结构可以具有大约108 / cm2的密度。 这样的电子源可以用超低电压进行调制，发射具有高电流密度和高均匀性的电子，并以高能量效率和长寿命运行。