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    Surface treatment process used in growing a carbon film
    3.
    发明授权
    Surface treatment process used in growing a carbon film 失效
    用于生长碳膜的表面处理工艺

    公开(公告)号：US06630023B2

    公开(公告)日：2003-10-07

    申请号：US09754558

    申请日：2001-01-04

    申请人： Zhidan Li Tolt ,  Zvi Yaniv ,  Richard Lee Fink

    发明人： Zhidan Li Tolt ,  Zvi Yaniv ,  Richard Lee Fink

    IPC分类号： C30B2504

    CPC分类号： B82Y10/00 ,  H01J1/304 ,  H01J9/025

    摘要： A film (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing treatment of a substrate and then depositing the film. The treatment step creates nucleation and growth sites on the substrate for the film deposition process and promotes election emission of the deposited film. With this process, a patterned emission can be achieved without post-deposition processing of the film. A field emitter device can be manufactured with such a film.

    摘要翻译： 可以在计算机显示器内使用的用于场致发射器件的膜（碳和/或金刚石）通过利用处理衬底然后沉积膜的方法产生。 处理步骤在用于膜沉积工艺的衬底上产生成核和生长位点并促进沉积膜的选择发射。 通过该工艺，可以实现图案化的发射，而不需要对膜进行后期沉积处理。 可以制造具有这种膜的场发射器装置。

    Process for growing a carbon film
    5.
    发明授权
    Process for growing a carbon film 失效
    生长碳膜的工艺

    公开(公告)号：US07070651B1

    公开(公告)日：2006-07-04

    申请号：US08859960

    申请日：1997-05-21

    申请人： Zhidan Li Tolt ,  Zvi Yaniv ,  Richard Lee Fink

    发明人： Zhidan Li Tolt ,  Zvi Yaniv ,  Richard Lee Fink

    IPC分类号： C30B29/04

    CPC分类号： B82Y10/00 ,  H01J9/025

    摘要： A film (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing etching of a substrate and then depositing the film. The etching step creates nucleation sites on the substrate for the film deposition process. With this process patterning of the emitting film is avoided. A field emitter device can be manufactured with such a film.

    摘要翻译： 可以在计算机显示器内使用的用于场致发射器件的膜（碳和/或金刚石）通过利用蚀刻基底然后沉积膜的方法产生。 蚀刻步骤在用于薄膜沉积工艺的基底上产生成核位点。 通过该过程避免了发光膜的图案化。 可以制造具有这种膜的场发射器装置。

    Cold cathode
    6.
    发明授权
    Cold cathode 失效
    冷阴极

    公开(公告)号：US06819035B2

    公开(公告)日：2004-11-16

    申请号：US10733714

    申请日：2003-12-11

    申请人： Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt

    发明人： Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt

    IPC分类号： H01J1304

    CPC分类号： H01J1/304 ,  B82Y10/00 ,  B82Y15/00 ,  H01J2201/30457

    摘要： A carbon film having an area of insulating material surrounded by an area of conducing material, and an area of material between the area of insulating material and the area of conducting material having a graded dielectric constant which varies from high to low from the area of insulating material to the area of conducting material.

    摘要翻译： 具有由导电材料区域包围的绝缘材料区域的碳膜，以及绝缘材料区域和导电材料区域之间的材料区域，其具有从绝缘区域的高低变化的梯度介电常数 材料到导电材料区域。

    Field emission material
    7.
    发明授权
    Field emission material 失效
    场发射材料

    公开(公告)号：US06664722B1

    公开(公告)日：2003-12-16

    申请号：US09594874

    申请日：2000-06-15

    申请人： Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt ,  Leif Thuesen

    发明人： Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt ,  Leif Thuesen

    IPC分类号： H01J113

    CPC分类号： B82Y15/00 ,  B82Y10/00 ,  H01J1/304

    摘要： A carbon film having an area of insulating material surrounded by an area of conducing material, and an area of material between the area of insulating material and the area of conducting material having a graded dielectric constant which varies from high to low from the area of insulating material to the area of conducting material. An emission site on the carbon film will emit electrons as a function of time, and as a function of distance across an emission site area.

    摘要翻译： 具有由导电材料区域包围的绝缘材料区域的碳膜，以及绝缘材料区域和导电材料区域之间的材料区域，其具有从绝缘区域的高低变化的梯度介电常数 材料到导电材料区域。 碳膜上的发射部位将作为时间的函数发射电子，并且作为发射场地区域的距离的函数。

    Cold cathode carbon film
    8.
    发明授权
    Cold cathode carbon film 有权
    冷阴极碳膜

    公开(公告)号：US06181056B2

    公开(公告)日：2001-01-30

    申请号：US09174500

    申请日：1998-10-16

    申请人： Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt

    发明人： Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt

    IPC分类号： H01J102

    CPC分类号： H01J1/304 ,  B82Y10/00 ,  H01J2201/30457 ,  H01J2201/3165

    摘要： A carbon film having an area of insulating material surrounded by an area of conducting material, and an area of material between the area of insulating material and the area of conducting material having a graded dielectric constant which varies from high to low from the area of insulating material to the area of conducting material.

    摘要翻译： 具有被导电材料区域包围的绝缘材料区域的碳膜以及绝缘材料区域与导电材料区域之间的材料区域具有梯度介电常数，从绝缘区域的高到低变化 材料到导电材料区域。

    Printable thin-film transistor for flexible electronics
    10.
    发明授权
    Printable thin-film transistor for flexible electronics 有权
    用于柔性电子元件的可印刷薄膜晶体管

    公开(公告)号：US07960718B2

    公开(公告)日：2011-06-14

    申请号：US11772711

    申请日：2007-07-02

    申请人： Richard Lee Fink ,  Zvi Yaniv

    发明人： Richard Lee Fink ,  Zvi Yaniv

    IPC分类号： H01L29/08

    CPC分类号： H01L51/0541 ,  B82Y10/00 ,  H01L51/0005 ,  H01L51/0045 ,  H01L51/102

    摘要： Fabrication of thin-film transistor devices on polymer substrate films that is low-temperature and fully compatible with polymer substrate materials. The process produces micron-sized gate length structures that can be fabricated using inkjet and other standard printing techniques. The process is based on microcrack technology developed for surface conduction emitter configurations for field emission devices.

    摘要翻译： 在聚合物基材薄膜上制造薄膜晶体管器件，该薄膜晶体管器件与低分子材料是低温的并且完全相容。 该工艺生产可使用喷墨和其他标准印刷技术制造的微米尺寸的栅极长度结构。 该过程基于为场发射器件的表面传导发射器配置开发的微裂纹技术。