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公开(公告)号:US11588517B2
公开(公告)日:2023-02-21
申请号:US17248446
申请日:2021-01-25
申请人: Diodes Incorporated
发明人: ZhangQi Jason Guo , Xin Mao , Michael Y. Zhang
摘要: Signal correction circuitry is described that improves the integrity of data transmitted over a serial data interface without interrupting the communication between the connected devices. The signal correction circuitry includes edge correction circuitry that speeds up the rising and falling edges of the data signal(s). The signal correction circuitry also includes DC compensation circuitry that boosts the level(s) of the data signal(s).
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公开(公告)号:USD969763S1
公开(公告)日:2022-11-15
申请号:US29813450
申请日:2021-10-28
申请人: Diodes Incorporated
设计人: Li-Ju Huang , Michael Yimin Zhang
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公开(公告)号:US11281272B2
公开(公告)日:2022-03-22
申请号:US16809467
申请日:2020-03-04
申请人: Diodes Incorporated
发明人: Ko-Yen Lee , Adrian Wang , Clive Huang
摘要: In a power supply having a control circuit for regulating the power supply output and a load switch for connecting the output to a load device, a method for reducing standby power includes determining if a load device is connected to the power supply. If no load device is connected, the load switch is turned off, and the power supply enters a standby mode, which includes alternating first time period of power-saving mode and second time period of regulating mode. In the power-saving mode, the control circuit stops regulating the output of the power supply and turns off one or more functional blocks to allow the output to drop, until the output reaches a pre-set low output limit. In the regulating mode, the control circuit turns on the functional blocks and regulates the power supply to allow the output to increase, until the output reaches a pre-set high output limit.
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公开(公告)号:US20220037311A1
公开(公告)日:2022-02-03
申请号:US17391114
申请日:2021-08-02
申请人: Diodes Incorporated
发明人: Peter Hugh Blair
IPC分类号: H01L27/06 , H01L21/8249
摘要: The invention solves the problem of depressed SOA of a bipolar junction transistor (BJT) when operated in an open base configuration by integrating in the same semiconductor chip a switchable short between the base and the emitter of the BJT. The switchable short switches between a high resistive value when the collector voltage of the BJT is lower than the base voltage. and a lower resistive value when the collector voltage is higher than the voltage base to effectively lower the BJT current gain (hFE). The switchable short in one implementation of the invention is in the form of a MOSFET with its gate connected to the BJT collector. The invention further teaches disposing in the integrated circuit chip a junction diode with a breakdown voltage lower than the BVCBO of the BJT. The addition of the junction diode provides a measure of maintaining the effectiveness of the MOSFET as switchable short at a reduced size.
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公开(公告)号:USD939458S1
公开(公告)日:2021-12-28
申请号:US29692906
申请日:2019-05-29
申请人: Diodes Incorporated
设计人: Li-Ju Huang , Michael Yimin Zhang
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公开(公告)号:US20210336618A1
公开(公告)日:2021-10-28
申请号:US17370054
申请日:2021-07-08
申请人: Diodes Incorporated
发明人: CHIAO-SHUN CHUANG , TA-CHUAN KUO , KE-HORNG CHEN
IPC分类号: H03K17/693
摘要: An apparatus includes a capacitive device configured to provide bias power for a high-side switch, a gate drive path having variable resistance connected between the capacitive device and a gate of the high-side switch, wherein the gate drive path having variable resistance is of a first resistance value in response to a turn-on of the high-side switch, and the gate drive path having variable resistance is of a second resistance value in response to a turn-off of the high-side switch, and wherein the second resistance value is greater than the first resistance value, and a control switch connected between the gate of the high-side switch and ground.
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公开(公告)号:US20150206985A1
公开(公告)日:2015-07-23
申请号:US14672867
申请日:2015-03-30
申请人: John Earnshaw , Wolfgang Kemper , Yen-Yi Lin , Steve Badcock , Mark French
发明人: John Earnshaw , Wolfgang Kemper , Yen-Yi Lin , Steve Badcock , Mark French
IPC分类号: H01L29/861 , H01L29/66 , H01L29/36
CPC分类号: H01L29/8613 , H01L27/0255 , H01L29/0607 , H01L29/36 , H01L29/66136 , H01L29/861
摘要: TSV devices with p-n junctions that are planar have superior performance in breakdown and current handling. Junction diode assembly formed in enclosed trenches occupies less chip area compared with junction-isolation diode assembly in the known art. Diode assembly fabricated with trenches formed after the junction formation reduces fabrication cost and masking steps increase process flexibility and enable asymmetrical TSV and uni-directional TSV functions.
摘要翻译: 具有p-n结平面的TSV器件在击穿和当前处理方面具有优异的性能。 形成在封闭沟槽中的结二极管组件与已知技术中的结隔离二极管组件相比占据较少的芯片面积。 在结形成之后形成的沟槽制造的二极管组件降低了制造成本,并且掩蔽步骤增加了工艺灵活性并且使得不对称TSV和单向TSV功能成为可能。
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公开(公告)号:US20130147029A1
公开(公告)日:2013-06-13
申请号:US13647180
申请日:2012-10-08
申请人: Diodes Incorporated
发明人: Hongtao Gao , Jiang Yuan Zhang
IPC分类号: H01L23/498
CPC分类号: H01L23/492 , H01L23/3107 , H01L23/49562 , H01L24/29 , H01L24/33 , H01L2224/291 , H01L2224/2929 , H01L2224/33181 , H01L2224/48091 , H01L2224/48247 , H01L2924/1815 , H01L2924/00015 , H01L2924/014 , H01L2924/00014 , H01L2924/07802
摘要: Some embodiments of the present disclosure provide the design and manufacture of an ultra-small chip assembly. The ultra-small chip assembly comprises a die, a plate-like back electrode disposed on the back-side of the die, and one or more plate-like positive electrodes disposed on the front-side of the die. The ultra-small chip assembly is configured such that one end of the plate-like back electrode extends beyond a first side of the die, and each of the one or more plate-like positive electrodes includes an end which extends beyond a second side of the die. By attaching both the plate-like back electrode and the plate-like positive electrodes on the surfaces of the die, and directly using the exposed ends of the plate-like electrodes as the lead-out electrodes for the chip assembly, the electrical connections outside of the die only occupy a very small volume.
摘要翻译: 本公开的一些实施例提供了超小型芯片组件的设计和制造。 超小型芯片组件包括模具,设置在模具背面的板状背电极和设置在模具前侧的一个或多个板状正电极。 超小型芯片组件被构造成使得板状背面电极的一端延伸超过模具的第一侧,并且一个或多个板状正电极中的每一个包括延伸超过第二侧的端部 死了 通过将板状背电极和板状正极两者连接在芯片的表面上,并且直接使用板状电极的露出端作为用于芯片组件的引出电极,电连接外 的死亡只占据非常小的数量。
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公开(公告)号:US20130076333A1
公开(公告)日:2013-03-28
申请号:US13684138
申请日:2012-11-21
申请人: DIODES INCORPORATED
发明人: Jin Wang
IPC分类号: G05F3/02
摘要: In one embodiment, the present invention includes a charge pump circuit. The charge pump circuit comprises a plurality of terminals, a plurality of switches for selectively coupling the plurality of terminals, and a control circuit. A first input terminal receives a first reference voltage and a second input terminal receives a second reference voltage. First, second, third, and fourth flying capacitor terminals and the first and second input terminals are selectively coupled together in different configurations. The control circuit selects the switches to actuate according to a cycling of at least three phases of configuration. The cycling shifts the first and second reference voltages to provide dual power supply rails.
摘要翻译: 在一个实施例中,本发明包括电荷泵电路。 电荷泵电路包括多个端子,用于选择性地耦合多个端子的多个开关和控制电路。 第一输入端接收第一参考电压,第二输入端接收第二参考电压。 第一,第二,第三和第四快速电容器端子以及第一和第二输入端子以不同的配置选择性地耦合在一起。 控制电路根据至少三个配置阶段的循环选择开关来启动。 循环移动第一和第二参考电压以提供双电源轨。
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公开(公告)号:US20120169261A1
公开(公告)日:2012-07-05
申请号:US13341192
申请日:2011-12-30
申请人: Ching-Yuh Tsay , Chuan Hung Chi
发明人: Ching-Yuh Tsay , Chuan Hung Chi
IPC分类号: H02P6/00
摘要: Some embodiments provide a system that generates a coil switching signal for a brushless DC motor. During operation, the system determines a magnetic field of the brushless DC motor at a first time and a magnetic field of the brushless DC motor at a second time. Then, the coil switching signal is generated based on a relationship between the magnetic field determined at the first time and a first predetermined threshold, and the magnetic field determined at the second time and a second predetermined threshold.
摘要翻译: 一些实施例提供一种为无刷直流电动机产生线圈切换信号的系统。 在运转中,系统第一次确定无刷直流电动机的磁场,第二次确定无刷直流电动机的磁场。 然后,基于在第一时间确定的磁场与第一预定阈值之间的关系和在第二时间确定的磁场和第二预定阈值之间的关系来生成线圈切换信号。
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