FET array bypass module
    4.
    发明授权
    FET array bypass module 有权
    FET阵列旁路模块

    公开(公告)号:US09455703B2

    公开(公告)日:2016-09-27

    申请号:US14538196

    申请日:2014-11-11

    摘要: A bypass module including a plurality of P-Channel MOSFETs connected in parallel to form a P-Channel MOSFET array, a plurality of N-Channel MOSFETs connected in parallel to form a N-Channel MOSFET array, and a control module to control switching of the P-Channel MOSFET array and the N-Channel MOSFET array is disclosed. A battery or load management device used to switch higher current and low voltages is disclosed. A battery bypass and bypass method for charge, discharge, and charge limiting control for various types of batteries is disclosed.

    摘要翻译: 一个旁路模块,包括并联连接的多个P沟道MOSFET,以形成P沟道MOSFET阵列,多个并联连接的N沟道MOSFET形成N沟道MOSFET阵列,以及一个控制模块来控制 公开了P沟道MOSFET阵列和N沟道MOSFET阵列。 公开了用于切换较高电流和低电压的电池或负载管理装置。 公开了用于各种类型的电池的充电,放电和充电限制控制的电池旁路和旁路方法。