Coating method for continuous preparation of diamond thin film with HFCVD device

    公开(公告)号:US11939669B2

    公开(公告)日:2024-03-26

    申请号:US17627754

    申请日:2019-11-26

    摘要: A coating method for preparing diamond thin film continuously by HFCVD device includes the steps of: (a) carbonizing left and right chamber hot filaments; (b) disposing a substrate on a platform along with a trolley in a sample access chamber under vacuum condition; opening a left chamber gate valve and moving the substrate to left thin film growth chamber; closing the left chamber gate valve to grow diamond thin film on the substrate; (c) repeating step (b) by using a right chamber gate valve and right thin film growth chamber to grow diamond thin film; (d) opening the left chamber gate valve and moving the substrate to the sample access chamber; closing the left chamber gate valve and dropping to room temperature while under vacuum condition; releasing the vacuum condition and taking out the substrate with diamond thin film; (e) repeating step (d) for the right chamber gate valve.

    Method for Transferring Graphene Nondestructively with Low Cost
    5.
    发明申请
    Method for Transferring Graphene Nondestructively with Low Cost 有权
    以低成本非破坏性地转移石墨烯的方法

    公开(公告)号:US20140130972A1

    公开(公告)日:2014-05-15

    申请号:US14124072

    申请日:2012-06-08

    IPC分类号: B32B37/00

    摘要: A method for transferring graphene nondestructively and at a low cost. In the method, a graphene is used whose surface is coated with transferring media and whose original substrate is an electrode, the electrode is placed into an electrolyte, and the graphene is separated from the original substrate by means of the driving force of bubbles and the gas intercalation produced on the graphene electrode surface during electrolysis. Then, the graphene coated with transferring media is nondestructively combined with a target substrate. The transferring media is removed so as to transfer the graphene to the target substrate nondestructively. The transferring method results in no damage or loss with respect to the graphene and the original substrate, and the original substrate can be re-used. Furthermore, the method is easy to perform, works quickly, is easy to control, and is pollution-free.

    摘要翻译: 非破坏性地以低成本转移石墨烯的方法。 在该方法中,使用其表面涂覆有转印介质并且其原始基底为电极的石墨烯,电极被放置在电解质中,并且通过气泡的驱动力将石墨烯与原始基底分离,并且 在电解过程中在石墨烯电极表面产生气体插层。 然后,涂覆有转印介质的石墨烯与靶基材非破坏性地组合。 去除转印介质以将石墨烯非破坏性地转印到目标衬底上。 转印方法不会对石墨烯和原始基底造成损害或损失,并且可以重新使用原始基底。 此外,该方法易于执行,工作快速,易于控制,无污染。

    Liquid-driven nano-porous actuator and the application thereof

    公开(公告)号:US09945399B2

    公开(公告)日:2018-04-17

    申请号:US14764824

    申请日:2014-09-26

    IPC分类号: B81B3/00 F15B15/08

    摘要: The present invention discloses a liquid-driven nano-porous actuator and the application thereof, and belongs to the field of nano material actuators. According to the present invention, by changing the content of the liquid in the nano-porous material, the interface between the surface liquid of the nano-porous material and air is exchanged between flat and curved states, so as to change the compressive stress acting on the nano-porous material from the surface tension of the liquid and change the elastic deformation of the nano-porous material, thus driving the nano-porous material to contract and expand in a reversible manner and further realizing driving performance. The actuator features simple and easy implementation and environmental-friendly effect without the need of external physical excitation signals (light, magnetic field, electricity or heat), complicated external excitation process, conversion of electric, magnetic, and light energy, chemical or electrochemical process, or toxic, harmful or corrosive chemical substances, and it is especially suitable for bio-robot, medical and aerospace fields.

    HOT ISOSTATIC PRESSING PROCESS FOR SUPERALLOY POWDER
    10.
    发明申请
    HOT ISOSTATIC PRESSING PROCESS FOR SUPERALLOY POWDER 审中-公开
    超级粉末热稳定压制工艺

    公开(公告)号:US20160263655A1

    公开(公告)日:2016-09-15

    申请号:US15029900

    申请日:2014-06-13

    摘要: Hot isostatic press (HIP) process for superalloy powder, to form a superalloy member. A first step HIP temperature is higher than an initial melting temperature of low-melting-point alloy powder and more than 15° C. lower than a solidus of completely homogenized alloy. Pressure is ≧90 MPa, and time is 20 minutes≦t≧1 hour. Heating is stopped after the first step to cool material until temperature is below initial melting temperature of low-melting-point phase. There is temperature keeping for ≧2 hours, to ensure low-melting-point phase, formed during cooling after first step, is completely dissolved. Alloy is cooled after second step to room temperature as furnace pressure keeping continues. Formation of an original particle boundary is prevented or there is significantly reduced the number of precipitated phases on the original particle boundary in HIP procedure, to obtain compact alloy with microscopic structures as equiaxed crystals.

    摘要翻译: 热等静压(HIP)工艺为超合金粉末,形成超合金构件。 第一步HIP温度高于低熔点合金粉末的初始熔融温度,比完全均质合金的固相线低15℃以上。 压力≥90MPa,时间为20分钟≤t≥1小时。 在第一步骤之后停止加热以冷却材料,直到低于低熔点相的初始熔融温度。 保温≥2小时,确保第一步冷却后形成的低熔点相完全溶解。 合金在第二步骤冷却至室温后,炉膛压力保持持续。 避免了原始粒子界面的形成,或者在HIP程序中原始粒子边界处的析出相数明显减少,得到具有微观结构的紧密合金作为等轴晶体。