公开(公告)号：US6084257A

公开(公告)日：2000-07-04

申请号：US449140

申请日：1995-05-24

申请人： Kurt E. Petersen ,  Nadim Maluf ,  Wendell McCulley ,  John Logan ,  Erno Klaasen ,  Jan M. Noworolski

发明人： Kurt E. Petersen ,  Nadim Maluf ,  Wendell McCulley ,  John Logan ,  Erno Klaasen ,  Jan M. Noworolski

IPC分类号： G01P15/08 ,  G01P15/125 ,  H01L29/82

CPC分类号： G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  Y10S73/01

摘要： In one aspect, the invention provides semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.

摘要翻译： 一方面，本发明提供了包括第一单晶硅晶片层的半导体传感器。 在第一晶片层中形成单晶硅结构。 该结构包括两个相对布置的基本垂直的主表面和两个相对布置的大体水平的小的表面。 主表面与次表面的纵横比至少为5：1。 包括凹陷区域的载体被固定到第一晶片层，使得所述结构与凹陷区域相对地悬挂。

公开(公告)号：US5461922A

公开(公告)日：1995-10-31

申请号：US98182

申请日：1993-07-27

申请人： Edward F. Koen

发明人： Edward F. Koen

IPC分类号： G01L9/00

CPC分类号： G01L19/143 ,  G01L19/003 ,  G01L19/0038 ,  G01L19/0645

摘要： A pressure transducer is provided for measuring pressure within a measurand environment, the transducer comprising a header which includes a substantially nondeformable molded housing formed from a first thermoplastic material defining a cavity and first and second openings into the cavity and a resilient diaphragm formed from the first thermoplastic material molded to the housing and spanning the first opening; a pressure sensing device disposed within the housing; and a pressure transfer medium disposed within the cavity so as to couple the diaphragm to the pressure sensing device.

摘要翻译： 提供用于测量被测量环境内的压力的压力传感器，换能器包括集管，该集管包括基本上不可变形的模制壳体，其由限定空腔的第一热塑性材料形成，并且第一和第二开口进入空腔，弹性膜由第一 模制到壳体并跨越第一开口的热塑性材料; 设置在所述壳体内的压力感测装置; 以及设置在所述腔内的压力传递介质，以将所述隔膜耦合到所述压力感测装置。

公开(公告)号：US6038928A

公开(公告)日：2000-03-21

申请号：US944733

申请日：1997-10-06

申请人： Nadim I. Maluf ,  John R. Logan ,  Gertjan van Sprakelaar

发明人： Nadim I. Maluf ,  John R. Logan ,  Gertjan van Sprakelaar

IPC分类号： G01L9/00 ,  G01L9/06 ,  G01L9/12

CPC分类号： G01L9/0042

摘要： A gauge or differential pressure sensor has a base portion having walls which define a cavity within the base portion and a diaphragm portion positioned over the cavity. The base portion comprises silicon; the diaphragm portion comprises silicon; the substrate has a passageway from a surface of the substrate into the chamber; the walls of the cavity form an angle with the diaphragm of no more than ninety degrees; and the chamber has a depth of at least about 5 microns. Preferably, the pressure sensor has a lip within the passageway which prevents an adhesive used to glue the sensor to a base from flowing to the diaphragm and fouling it. The pressure sensor is made by forming a cavity in a first wafer, fusion bonding a second wafer over the first wafer in an oxidizing environment, and using the thin oxide formed when fusion bonding the wafers as an etch stop when opening the cavity to the atmosphere. Etch conditions are selected to form the preferred lip in the passageway. The pressure sensor has improved accuracy and reliability as well as small size.

公开(公告)号：US5355712A

公开(公告)日：1994-10-18

申请号：US758836

申请日：1991-09-13

申请人： Kurt Petersen ,  Farzad Pourahmadi ,  Russell Craddock

发明人： Kurt Petersen ,  Farzad Pourahmadi ,  Russell Craddock

IPC分类号： G01P21/00

CPC分类号： G01L9/0042 ,  G01L27/007 ,  G01P21/00

摘要： The present invention discloses a method and apparatus for testing the operational capability of flexure area equipped sensors especially those made of micromachined silicon. A thermal actuator beam is provided to bridge the structures which are joined by the flexure area. During the test, the beam's temperature is changed relative to that of the flexure area so as to provide a differential expansion or contraction. The result is that the flexure area bends and conventional bending sensors for the flexure area can sense the amount of bend. By comparing the actual amount of bend sensed with the amount expected from the temperature change applied to the beam, the operational capability can be determined.

摘要翻译： 本发明公开了一种用于测试装有挠曲区域的传感器，特别是由微加工硅制成的传感器的操作能力的方法和装置。 提供热致动器梁以桥接由弯曲区域连接的结构。 在测试期间，光束的温度相对于弯曲部分的温度改变，以便提供差别的膨胀或收缩。 结果是弯曲区域弯曲，弯曲区域的常规弯曲传感器可以感测弯曲量。 通过将感测到的实际弯曲量与应用于梁的温度变化的预期量进行比较，可以确定操作能力。

公开(公告)号：US6140143A

公开(公告)日：2000-10-31

申请号：US833417

申请日：1992-02-10

申请人： Lee A. Christel ,  Theodore J. Vermeulen

发明人： Lee A. Christel ,  Theodore J. Vermeulen

IPC分类号： H01L29/84 ,  B81B3/00 ,  B81C1/00 ,  G01L9/00 ,  H01L21/00

CPC分类号： G01L9/0042

摘要： A method of micromachining silicon to form relatively thick boss areas and relatively thin flexure areas. The method includes the provision of a deep diffusion of n-type dopant atoms in the vicinity of the desired thick boss structures on a p-type silicon substrate. A layer having a thickness equal to the desired thickness of a flexure area is epitaxially grown of n-type doped silicon over the previously doped p-type substrate. Finally, the p-type doped silicon is etched away by a suitable etchant leaving relatively thick boss areas joined by relatively thin flexure areas.

摘要翻译： 一种微加工硅以形成较厚的凸起区域和较薄的弯曲区域的方法。 该方法包括在p型硅衬底上在期望的厚凸起结构附近提供n型掺杂剂原子的深扩散。 在预先掺杂的p型衬底上，n型掺杂硅的外延生长具有等于弯曲区域所需厚度的厚度的层。 最后，通过合适的蚀刻剂蚀刻p型掺杂的硅，留下相对较薄的凸起区域，其相对薄的弯曲区域连接。

公开(公告)号：US5231301A

公开(公告)日：1993-07-27

申请号：US771301

申请日：1991-10-02

申请人： Kurt E. Peterson ,  Lee A. Christel

发明人： Kurt E. Peterson ,  Lee A. Christel

IPC分类号： G01L9/00

CPC分类号： G01L9/0054

摘要： An electromechanical sensor is provided which comprises an n-type semiconductor region which defines a flexible member surrounded by a thicker base portion; at least one piezoresistor formed in the semiconductor region; an n+ region formed in the thicker base portion; a first insulative layer which overlays the piezoresistor and which extends at least from the piezoresistor to the first n+ doped region; a guard layer which overlays at least a portion of the first insulative layer such that the guard layer overlays the piezoresistor and extends at least from the piezoresistor to a point adjacent to the n+ region; and a first bias contact which electrically interconnects the n+ region and the guard layer.

摘要翻译： 提供了一种机电传感器，其包括限定由较厚基部包围的柔性构件的n型半导体区域; 形成在所述半导体区域中的至少一个压电电阻; 形成在较厚基部的n +区域; 第一绝缘层，其覆盖压电电阻器，并且至少从压电电阻器延伸到第一n +掺杂区域; 保护层，其覆盖所述第一绝缘层的至少一部分，使得所述保护层覆盖所述压电电阻器并且至少从所述压电电阻器延伸到与所述n +区域相邻的点; 以及使n +区和保护层电互连的第一偏置接触。