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公开(公告)号：US20240210243A1
公开(公告)日：2024-06-27
申请号：US18596597
申请日：2024-03-05
Applicant: InnoLux Corporation
Inventor： Yu-Tsung LIU , Wei-Ju LIAO , Wei-Lin WAN , Cheng-Hsueh HSIEH , Po-Hsin LIN , Te-Yu LEE
IPC: G01J1/44 , G01J1/04 , G06V40/13 , H01L27/146
CPC classification number: G01J1/44 , G01J1/0411 , G01J1/0437 , H01L27/14623 , H01L27/14627 , G01J2001/446 , G01J2001/4473 , G06V40/1318
Abstract: An electronic device having a sensing region and a non-sensing region includes a sensing element, a first light shielding layer and a second light shielding layer. The sensing element is disposed corresponding to the sensing region. The first light shielding layer includes at least one first opening corresponding to the sensing element. The second light shielding layer includes at least one second opening overlapped with the first opening. In a cross-section view, a boundary between the sensing region and the non-sensing region is at an outer side of an edge of a portion of the first light shielding layer, and a horizontal distance between an edge of a portion of the second light shielding layer and the sensing element is greater than or equal to a vertical distance between the portion of the second light shielding layer and the sensing element in a top-view direction of the electronic device.
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公开(公告)号：US11965970B2
公开(公告)日：2024-04-23
申请号：US17250672
申请日：2019-08-16
Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor： Tatsuki Nishino
IPC: G01S7/4863 , G01J1/44 , G01S17/931 , H01L31/107
CPC classification number: G01S17/931 , G01J1/44 , G01S7/4863 , H01L31/107 , G01J2001/442 , G01J2001/4466 , G01J2001/4473
Abstract: A light receiving element and a ranging system is provided which achieve improvement of pixel characteristics while allowing variation in a breakdown voltage of an SPAD. The light receiving element includes a pixel array in which a plurality of pixels is arranged in a matrix, and a pixel driving unit configured to control respective pixels of the pixel array to be active pixels or non-active pixels. The pixel includes an SPAD, a transistor connected to the SPAD in series, an inverter configured to output a detection signal indicating incidence of a photon on the SPAD, a first transistor which is switched on or off in accordance with control of the pixels to be the active pixels or the non-active pixels, and a second transistor connected to the first transistor in series.
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公开(公告)号：US11860029B2
公开(公告)日：2024-01-02
申请号：US17418260
申请日：2020-12-29
Inventor： Kunjing Chung , Dexi Kong
CPC classification number: G01J1/18 , G01J1/46 , G01J2001/446 , G01J2001/4473
Abstract: Provided are a light intensity detection circuit, a light intensity detection method and an light intensity detection apparatus. The light intensity detection circuit includes a photoelectric conversion sub-circuit, a source follower sub-circuit, a reset sub-circuit, a read sub-circuit and a sense sub-circuit. The photoelectric conversion sub-circuit generates a corresponding electrical signal according to an incident light signal, and outputs it to a first node; the source follower sub-circuit generates a corresponding voltage signal or current signal according to the electrical signal of the first node and outputs it to a second node; the read sub-circuit reads the voltage signal or current signal of the second node to determine an incident light intensity; the reset sub-circuit provides a voltage at a offset voltage terminal to the first node.
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公开(公告)号：US20230282435A1
公开(公告)日：2023-09-07
申请号：US18013571
申请日：2021-06-17
Applicant: UR FOG S.R.L.
Inventor： Mauro LOMBARDO , Giovanni BALESTRINI , Marco ZANGIROLAMI
CPC classification number: H01H85/06 , G01K7/22 , G01J1/44 , H10N10/17 , G01J2001/446 , G01J2001/4473 , A63J5/025
Abstract: A safety system for a battery-powered fog generator is described, designed to operate on a vaporization coil (2) of a fogging fluid; the safety system includes: a fuse wire (1), each placed at one end of the coil (2), suitable for heating both due to a Joule effect and through heat coming from the coil (2) by thermal conduction, the fusible wire (1) being therefore designed to melt when its temperature exceeds a melting threshold value, interrupting the power supply from the battery to the coil (2); a sensor (6) designed to detect the temperature of the coil (2) when current flows in it; and a control unit (7) operatively connected to the sensor (6).
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公开(公告)号：US10018506B2
公开(公告)日：2018-07-10
申请号：US15475087
申请日：2017-03-30
Applicant: Peel Technologies, Inc.
Inventor： Samyeer Suresh Metrani
CPC classification number: G01J1/44 , A61B5/02433 , A61B5/14552 , G01J1/0295 , G01J1/4204 , G01J2001/446 , G01J2001/4473 , G01S7/484 , G01S7/4861 , G01S17/026 , G01S17/08
Abstract: A multifunctional infrared (IR) module is configured for multiple IR applications without an additional microcontroller to be integrated into a computing device and is able to utilize voltage control instead of current control. The multifunctional IR module includes an IR light emitting diode (LED), and an IR receiver (e.g., photodiode or phototransistor). In one embodiment, the multifunctional IR module includes a resistor that is connected to the cathode of the IR LED and the drain of a transistor, with the source of the transistor grounded. In some embodiments, the multifunctional IR module additionally includes a red LED. Various configurations of the multifunctional IR module are able to perform one or more of the following functions: IR in (receiving IR signals), IR out (generating IR signals), heart rate sensing, SpO2 (oxygen saturation) sensing, distance/proximity detection, gesture detection, LED control, and ambient light detection.
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Patent Agency Ranking
公开(公告)号：US09709439B2
公开(公告)日：2017-07-18
申请号：US14286286
申请日：2014-05-23
Applicant: Samsung Display Co., LTD.
Inventor： Joon-Chul Goh , Jae-Keun Lim
CPC classification number: G01J1/46 , G01J2001/444 , G01J2001/4473 , G06F3/0412 , H01L27/3227 , H01L27/3234
Abstract: A light sensitive circuit includes a light sensing capacitor and a driving transistor. The light sensing capacitor is configured to sense light of a predetermined one or more wavelengths. The driving transistor includes a gate electrode electrically connected to the light sensing capacitor and is configured to generate a light sensing current according to a voltage of the gate electrode in the driving transistor. A light sensing accuracy and a light sensing signal to noise ratio (SNR) of the display apparatus including a plurality of such light sensing capacitors may be improved relative to ones that do not include such light sensing capacitors.
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公开(公告)号：US20140284630A1
公开(公告)日：2014-09-25
申请号：US14016006
申请日：2013-08-30
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Taihei YAMAGUCHI , Masanori YAMADA
IPC: G02B6/42
CPC classification number: G02B6/4295 , G01J1/44 , G01J2001/4473 , H01L27/14625 , H01L31/02019 , H01L31/173
Abstract: According to one embodiment, an optical coupling device includes a light emitting element configured to convert an electric signal into an optical signal, a photo transistor circuit configured to convert the optical signal into a current, the photo transistor circuit including a first transistor having a collector connected to a power source and an emitter through which the current is output, and a current mirror circuit including a second transistor having a collector connected to the emitter of the first transistor, a base connected to the emitter of the first transistor, and an emitter connected to a ground, and a third transistor having a collector connected to an output terminal, a base connected to the base of the second transistor, and a emitter connected to the ground.
Abstract translation: 根据一个实施例，光耦合装置包括被配置为将电信号转换成光信号的发光元件，被配置为将光信号转换成电流的光电晶体管电路，光电晶体管电路包括具有集电极的第一晶体管 连接到电源和通过其输出电流的发射极，以及电流镜电路，包括具有连接到第一晶体管的发射极的集电极的第二晶体管，连接到第一晶体管的发射极的基极和发射极 连接到地，以及第三晶体管，其具有连接到输出端子的集电极，连接到第二晶体管的基极的基极和连接到地的发射极。
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公开(公告)号：US20240230403A1
公开(公告)日：2024-07-11
申请号：US17925214
申请日：2021-12-27
Inventor： Yifan SONG , Wenchao HAN , Zhaohui MENG , Wei SUN
IPC: G01J1/44 , G01R31/265 , G01J1/42
CPC classification number: G01J1/44 , G01R31/2656 , G01J2001/4247 , G01J2001/4473
Abstract: The present disclosure provides a luminous flux test circuitry, a test method and a display panel. The luminous flux test circuitry includes two test sub-circuitries, a control sub-circuitry and a light-shielding pattern. Each test sub-circuitry includes N photosensitive transistors; an output end of each photosensitive transistor in a first test sub-circuitry is coupled to a first input end of the control sub-circuitry; an output end of each photosensitive transistor in a second test sub-circuitry is coupled to a second input end of the control sub-circuitry; the light-shielding pattern covers the photosensitive transistors in the second test sub-circuitry; at a sampling stage, the photosensitive transistors in each test sub-circuitry are in a reverse bias state; and the control sub-circuitry is configured to determine a luminous flux detected by the photosensitive transistors in the first test sub-circuitry in accordance with a leakage current generated by the photosensitive transistors in each test sub-circuitry.
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公开(公告)号：US11885674B2
公开(公告)日：2024-01-30
申请号：US17217670
申请日：2021-03-30
Applicant: Honeywell International Inc.
IPC: G01J1/44
CPC classification number: G01J1/44 , G01J2001/4473
Abstract: A phototransistor apparatus and a method of operating the phototransistor apparatus. The phototransistor apparatus can include a phototransistor, a light source, and a supply voltage associated with the phototransistor. After switching on the supply voltage, the phototransistor can generate a phototransistor signal that is scanned, wherein the supply voltage associated with the phototransistor is switched on later than the light source, and wherein charge carriers in a base area of the phototransistor are reactive to a light pulse from the light source in a currentless state, and continue to react after the light source is switched off. Alternatively, the power supply of the phototransistor can be switched on before the light source is switched off. By delaying the switching on of the power supply of the phototransistor compared to the switching on of the light source, a significant current saving can be achieved.
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公开(公告)号：US11805709B2
公开(公告)日：2023-10-31
申请号：US16813628
申请日：2020-03-09
Applicant: PsiQuantum Corp.
Inventor： Faraz Najafi
IPC: H10N60/84 , G01J1/44 , H01L29/43 , H01L29/786 , H01L31/00 , H01L31/0224 , H01L31/113 , H10N60/10 , H10N60/20 , H10N60/30 , H10N60/35 , G01J1/42
CPC classification number: H10N60/84 , G01J1/44 , H01L29/437 , H01L29/78645 , H01L31/00 , H01L31/022408 , H01L31/1136 , H10N60/128 , H10N60/207 , H10N60/30 , H10N60/35 , G01J1/42 , G01J2001/442 , G01J2001/446 , G01J2001/4473
Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and operating transistors. In one aspect, a transistor includes: (1) a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature; and (2) a superconducting component configured to operate in a superconducting state while: (a) a temperature of the superconducting component is below a superconducting threshold temperature; and (b) a first current supplied to the superconducting component is below a current threshold; where: (i) the semiconducting component is located adjacent to the superconducting component; and (ii) in response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first current exceeds the lowered current threshold, thereby transitioning the superconducting component to a non-superconducting state.
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