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    POLYSILICON PHOTODETECTOR, METHODS AND APPLICATIONS
    1.
    发明申请
    POLYSILICON PHOTODETECTOR, METHODS AND APPLICATIONS 有权
    多晶硅光电转换器，方法与应用

    公开(公告)号：US20120213468A1

    公开(公告)日：2012-08-23

    申请号：US13398132

    申请日：2012-02-16

    申请人： Michal Lipson ,  Kyle Preston

    发明人： Michal Lipson ,  Kyle Preston

    IPC分类号： G02B6/42 ,  H01L31/0368

    CPC分类号： H01L31/02327 ,  G01J1/42 ,  G02B6/12004 ,  G02B6/29341 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/09 ,  H01L31/105 ,  H01L31/182 ,  Y02E10/546

    摘要： A silicon photonic photodetector structure, a method for fabricating the silicon photonic photodetector structure and a method for operating a silicon photonic photodetector device that results from the photonic photodetector structure each use a strip waveguide optically coupled with a polysilicon material photodetector layer that may be contiguous with a semiconductor material slab to which is located and formed a pair of electrical contacts separated by the polysilicon material photodetector layer. Within the foregoing silicon photonic photodetector structure and related methods the polysilicon material photodetector layer includes defect states suitable for absorbing an optical signal from the strip waveguide and generating an electrical output signal using at least one of the electrical contacts when the optical signal includes a photon energy less than a band gap energy of a polysilicon material from which is comprised the polysilicon material photodetector layer.

    摘要翻译： 硅光子检测器结构，用于制造硅光子检测器结构的方法和用于操作由光子光电检测器结构产生的硅光子检测器器件的方法各自使用与多晶硅材料光电检测器层光学耦合的带状波导，所述多晶硅材料光电检测器层可以与 半导体材料板，其被定位并形成由多晶硅材料光电检测器层隔开的一对电触头。 在上述硅光子检测器结构和相关方法中，多晶硅材料光电检测器层包括适于吸收来自带状波导的光信号的缺陷状态，并且当光信号包括光子能量时，使用至少一个电触点产生电输出信号 小于多晶硅材料的带隙能量，其中由多晶硅材料构成多晶硅材料光电检测器层。

    Polysilicon photodetector, methods and applications
    4.
    发明授权
    Polysilicon photodetector, methods and applications 有权
    多晶硅光电探测器，方法和应用

    公开(公告)号：US08861909B2

    公开(公告)日：2014-10-14

    申请号：US13398132

    申请日：2012-02-16

    申请人： Michal Lipson ,  Kyle Preston

    发明人： Michal Lipson ,  Kyle Preston

    IPC分类号： G02B6/26 ,  G02B6/42 ,  H01L31/0368 ,  H01L31/105 ,  H01L31/0352 ,  G02B6/12 ,  H01L31/102 ,  H01L31/00

    CPC分类号： H01L31/02327 ,  G01J1/42 ,  G02B6/12004 ,  G02B6/29341 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/09 ,  H01L31/105 ,  H01L31/182 ,  Y02E10/546

    摘要： A silicon photonic photodetector structure, a method for fabricating the silicon photonic photodetector structure and a method for operating a silicon photonic photodetector device that results from the photonic photodetector structure each use a strip waveguide optically coupled with a polysilicon material photodetector layer that may be contiguous with a semiconductor material slab to which is located and formed a pair of electrical contacts separated by the polysilicon material photodetector layer. Within the foregoing silicon photonic photodetector structure and related methods the polysilicon material photodetector layer includes defect states suitable for absorbing an optical signal from the strip waveguide and generating an electrical output signal using at least one of the electrical contacts when the optical signal includes a photon energy less than a band gap energy of a polysilicon material from which is comprised the polysilicon material photodetector layer.

    摘要翻译： 硅光子检测器结构，用于制造硅光子检测器结构的方法和用于操作由光子光电检测器结构产生的硅光子检测器器件的方法各自使用与多晶硅材料光电检测器层光学耦合的带状波导，所述多晶硅材料光电检测器层可以与 半导体材料板，其被定位并形成由多晶硅材料光电检测器层隔开的一对电触头。 在上述硅光子检测器结构和相关方法中，多晶硅材料光电检测器层包括适于吸收来自带状波导的光信号的缺陷状态，并且当光信号包括光子能量时，使用至少一个电触点产生电输出信号 小于多晶硅材料的带隙能量，其中由多晶硅材料构成多晶硅材料光电检测器层。

    Pixel-Shifting Spectrometer on Chip
    5.
    发明申请
    Pixel-Shifting Spectrometer on Chip 审中-公开
    像素位移光谱仪芯片

    公开(公告)号：US20140085632A1

    公开(公告)日：2014-03-27

    申请号：US14035288

    申请日：2013-09-24

    申请人： Kyle Preston ,  Arthur Nitkowski

    发明人： Kyle Preston ,  Arthur Nitkowski

    IPC分类号： G01J3/28

    CPC分类号： G01J3/2823 ,  G01J3/0205 ,  G01J3/0218 ,  G01J3/18 ,  G01J3/28 ,  G01J2003/064 ,  G01J2003/2866 ,  G01J2003/2873

    摘要： Various embodiments of apparatuses, systems and methods are described herein for implementing pixel-shifting or an interpixel shift to increase the effective dispersion and effective spectral resolution of a spectrometer in a manner which is faster, less complicated and more robust compared to conventional techniques that employ mechanical motion to implement pixel-shifting in a spectrometer that uses free space optical components.

    摘要翻译： 本文描述了装置，系统和方法的各种实施例，用于实现像素移位或像素间位移，以与使用的传统技术相比，以更快，更不复杂和更强大的方式增加光谱仪的有效色散和有效光谱分辨率 在使用自由空间光学元件的光谱仪中实现像素移位的机械运动。

    Electro-optic modulator structures, related methods and applications
    6.
    发明授权
    Electro-optic modulator structures, related methods and applications 有权
    电光调制器结构，相关方法和应用

    公开(公告)号：US09217830B2

    公开(公告)日：2015-12-22

    申请号：US13697866

    申请日：2011-05-13

    申请人： Michal Lipson ,  Sasikanth Manipatruni ,  Long Chen ,  Kyle Preston

    发明人： Michal Lipson ,  Sasikanth Manipatruni ,  Long Chen ,  Kyle Preston

    IPC分类号： G02F1/035 ,  G02B6/26 ,  G02B6/42 ,  G02B6/293 ,  G02B6/136 ,  G02B6/12 ,  G02F1/313

    CPC分类号： G02B6/29338 ,  G02B6/12007 ,  G02B6/136 ,  G02B6/29341 ,  G02B2006/12142 ,  G02F1/3133 ,  Y02P70/521

    摘要： An electro-optic modulator structure, a method for fabricating the electro-optic modulator structure, a method for operating an electro-optic modulator device that derives from the electro-optic modulator structure and a related communications apparatus that includes the electro-optic modulator structure all are directed towards effecting a comparatively low voltage operation of the electro-optic modulator device predicated upon consideration of optimal charge carrier injection efficiency characteristics of a PIN diode charge carrier injection based micro-ring electro-optic modulator structure as a function of applied bias voltage. To realize the foregoing result, at least in part, the PIN diode charge carrier injection based electro-optic modulator structure includes at least one of a p-doped region and an n-doped region that has a relatively high volume dopant concentration at a surface thereof.

    摘要翻译： 电光调制器结构，用于制造电光调制器结构的方法，用于操作从电光调制器结构导出的电光调制器装置的方法和包括电光调制器结构的相关通信装置 所有这些都旨在实现电光调制器装置的相当低的电压操作，其基于考虑作为施加的偏置电压的基于PIN二极管电荷载流子注入的微环电光调制器结构的最佳电荷载流子注入效率特性 。 为了实现上述结果，至少部分地基于PIN二极管电荷载流子注入的电光调制器结构包括在表面上具有相对高的体积掺杂剂浓度的p掺杂区域和n掺杂区域中的至少一个 其中。

    Multi-Function Spectrometer-On-Chip with a Single Detector Array
    8.
    发明申请
    Multi-Function Spectrometer-On-Chip with a Single Detector Array 有权
    具有单个检测器阵列的片上多功能光谱仪

    公开(公告)号：US20140085634A1

    公开(公告)日：2014-03-27

    申请号：US14035348

    申请日：2013-09-24

    申请人： Kyle Preston ,  Arthur Nitkowski ,  Nicholas Sherwood ,  Arsen Hajian

    发明人： Kyle Preston ,  Arthur Nitkowski ,  Nicholas Sherwood ,  Arsen Hajian

    IPC分类号： G01J3/02

    CPC分类号： G01J3/447 ,  G01J3/0205 ,  G01J3/0218 ,  G01J3/0224 ,  G01J3/0259 ,  G01J3/18 ,  G01J3/1804 ,  G01J3/1895 ,  G01J3/2803 ,  G01J3/36

    摘要： Various embodiments of apparatuses, systems and methods are described herein for a spectrometer comprising at least two dispersive elements configured to receive at least one input optical signal and generate two or more pluralities of spatially separated spectral components, at least a portion of the at least two dispersive elements being implemented on a first substrate; and a single detector array coupled to the at least two dispersive elements and configured to receive and measure two or more pluralities of narrowband optical signals derived from the two or more pluralities of spatially separated spectral components, respectively.

    摘要翻译： 本文描述了用于光谱仪的装置，系统和方法的各种实施例，其包括至少两个分散元件，其被配置为接收至少一个输入光信号并产生两个或更多个空间上分离的光谱分量，至少两个 分散元件被实施在第一基板上; 以及耦合到所述至少两个色散元件并被配置为分别接收和测量从所述两个或更多个空间分离的光谱分量导出的两个或更多个窄带光信号的单个检测器阵列。

    ELECTRO-OPTIC MODULATOR STRUCTURES, RELATED METHODS AND APPLICATIONS
    10.
    发明申请
    ELECTRO-OPTIC MODULATOR STRUCTURES, RELATED METHODS AND APPLICATIONS 有权
    电光调制器结构，相关方法和应用

    公开(公告)号：US20130056623A1

    公开(公告)日：2013-03-07

    申请号：US13697866

    申请日：2011-05-13

    申请人： Michal Lipson ,  Sasikanth Manipatruni ,  Long Chen ,  Kyle Preston

    发明人： Michal Lipson ,  Sasikanth Manipatruni ,  Long Chen ,  Kyle Preston

    IPC分类号： H01L31/105 ,  G01J1/04 ,  H01L31/18

    CPC分类号： G02B6/29338 ,  G02B6/12007 ,  G02B6/136 ,  G02B6/29341 ,  G02B2006/12142 ,  G02F1/3133 ,  Y02P70/521

    摘要： An electro-optic modulator structure, a method for fabricating the electro-optic modulator structure, a method for operating an electro-optic modulator device that derives from the electro-optic modulator structure and a related communications apparatus that includes the electro-optic modulator structure all are directed towards effecting a comparatively low voltage operation of the electro-optic modulator device predicated upon consideration of optimal charge carrier injection efficiency characteristics of a PIN diode charge carrier injection based micro-ring electro-optic modulator structure as a function of applied bias voltage. To realize the foregoing result, at least in part, the PIN diode charge carrier injection based electro-optic modulator structure includes at least one of a p-doped region and an n-doped region that has a relatively high volume dopant concentration at a surface thereof.

    摘要翻译： 电光调制器结构，用于制造电光调制器结构的方法，用于操作从电光调制器结构导出的电光调制器装置的方法和包括电光调制器结构的相关通信装置 所有这些都旨在实现电光调制器装置的相当低的电压操作，其基于考虑作为施加的偏置电压的基于PIN二极管电荷载流子注入的微环电光调制器结构的最佳电荷载流子注入效率特性 。 为了实现上述结果，至少部分地基于PIN二极管电荷载流子注入的电光调制器结构包括在表面上具有相对高的体积掺杂剂浓度的p掺杂区域和n掺杂区域中的至少一个 其中。