摘要:
The invention relates to a method for compensating at least one defect of an optical system which includes introducing an arrangement of local persistent modifications in at least one optical element of the optical system, which does not have pattern elements on one of its optical surfaces, so that the at least one defect is at least partially compensated.
摘要:
A mirror serves for use for guiding illumination and imaging light in EUV projection lithography. The mirror has a reflective surface, the reflective surface forming a magnetic field in such a way that at least one polarization property of the illumination and imaging light is influenced via the magnetic field upon reflection. A mirror system has, besides the mirror, additionally a magnetization predefining device for predefining a magnetization of the reflective surface of the mirror. An illumination optical unit has at least one mirror of this type or at least one facet mirror device comprising at least one individual mirror constructed in this way. In the case of a mirror of this type, the illumination and/or imaging properties of illumination and/or imaging light guided via the mirror are improved.
摘要:
The invention relates to an optical system for a microlithographic projection exposure apparatus, and to a microlithographic exposure method. An optical system for a microlithographic projection exposure apparatus comprises at least one mirror arrangement having a plurality of mirror elements, wherein these mirror elements can be adjusted independently of one another for changing an angular distribution of the light reflected by the mirror arrangement, and a polarization-influencing optical arrangement which is arranged downstream of the mirror arrangement in the light propagation direction, wherein the polarization-influencing optical arrangement reflects a light beam incident on the arrangement in at least two reflections, which do not occur in a common plane, for at least one angular distribution of the light reflected by the mirror arrangement.
摘要:
An illumination system for microlithography serves to illuminate an illumination field with illumination light of a primary light source. A first raster arrangement has bundle-forming first raster elements which are arranged in a first plane of the illumination system or adjacent to the plane. The first raster arrangement serves to generate a raster arrangement of secondary light sources. A transmission optics serves for superimposed transmission of the illumination light of the secondary light sources into the illumination field. The transmission optics has a second raster arrangement with bundle-forming second raster elements. In each case one of the raster elements of the first raster arrangement is allocated to one of the raster elements of the second raster arrangement for guiding a partial bundle of an entire bundle of illumination light. The first raster arrangement for example has at least two types (I, II, III) of the first raster elements which have different bundle-influencing effects. The raster elements of the two raster arrangements are arranged relative to one another in such a way that to each raster element type (I to III) is allocated at least one individual distance (ΔI, ΔII, ΔIII) between the first raster element of this type (I to III) and the allocated second raster element of the second raster arrangement. As a result, an illumination system is obtained which allows particular illumination parameters to be influenced in such a way that undesirable influences on other illumination parameters are avoided to the greatest extent possible.
摘要:
The invention relates to an optical system for a microlithographic projection exposure apparatus, and to a microlithographic exposure method. An optical system for a microlithographic projection exposure apparatus comprises at least one mirror arrangement having a plurality of mirror elements, wherein these mirror elements can be adjusted independently of one another for changing an angular distribution of the light reflected by the mirror arrangement, and a polarization-influencing optical arrangement which is arranged downstream of the mirror arrangement in the light propagation direction, wherein the polarization-influencing optical arrangement reflects a light beam incident on the arrangement in at least two reflections, which do not occur in a common plane, for at least one angular distribution of the light reflected by the mirror arrangement.
摘要:
A raster arrangement includes first and second types of raster elements which have different bundle-influencing effects. There is a distance step between a first raster area and a second raster area. The first raster area comprises a raster element of the first raster element type. The second raster area includes a raster element of the second raster element type. The raster arrangement is configured to be used in a microlithography illumination system.
摘要:
A mirror serves for use for guiding illumination and imaging light in EUV projection lithography. The mirror has a reflective surface, the reflective surface forming a magnetic field in such a way that at least one polarization property of the illumination and imaging light is influenced via the magnetic field upon reflection. A mirror system has, besides the mirror, additionally a magnetization predefining device for predefining a magnetization of the reflective surface of the mirror. An illumination optical unit has at least one mirror of this type or at least one facet mirror device comprising at least one individual mirror constructed in this way. In the case of a mirror of this type, the illumination and/or imaging properties of illumination and/or imaging light guided via the mirror are improved.
摘要:
A collector for a projection exposure apparatus for microlithography comprises a plurality of reflective sections which are embodied and arranged in such a way that they can be impinged upon during the focusing of radiation from a first focus into a second focus with angles of impingement in a predefined angular spectrum.
摘要:
A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimisation criterion. These control commands are applied to the optical elements, before the mask is illuminated.
摘要:
An illumination system of a microlithographic projection apparatus includes a spatial light modulator having a modulation surface including a plurality of micromirrors. Each micromirror includes a mirror surface having an orientation that can be changed individually for each micromirror. For at least one of the micromirrors, at least one parameter that is related to the mirror surface is measured. The orientation of the mirror surfaces is controlled depending on the at least one measured parameter. A light pattern is produced on the modulation surface, and an image of the light pattern is formed on an optical integrator that has a plurality of light entrance facets. Images of the light entrance facets are superimposed on a mask.