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公开(公告)号：US11798658B2
公开(公告)日：2023-10-24
申请号：US16980370
申请日：2019-10-16
发明人： Xiaoyan Song , Hao Lu , Yanan Li , Fawei Tang
IPC分类号： G06F30/23 , G16C60/00 , G16C10/00 , G16C20/80 , G06F111/14 , G06F113/26 , G06F111/10
CPC分类号： G16C60/00 , G06F30/23 , G16C10/00 , G16C20/80 , G06F2111/10 , G06F2111/14 , G06F2113/26
摘要： A computer simulation analysis method suitable for describing the mechanical behavior of multiphase composites based on the real microstructure of materials relates to a multidisciplinary field such as computational material science, simulation and high throughput calculation. Through the first-principles calculation under nano scale, the molecular dynamics simulation under micro scale, and the thermodynamic calculation under mesoscopic scale, various physical parameters needed for the finite element simulation under macro scale can be obtained, including the elastic and plastic physical parameters of each phase in the composite at different temperature and different grain sizes. Focused ion beam experiment and image processing are adopted to obtain real material microstructure. Through the parameter coupling and parameter transfer among the calculated results of various scales, combining the microstructure of the material, stress-strain relationship, stress distribution and its evolution law, plastic deformation and other mechanical behaviors of the multiphase composites under complex stress and different temperature can be simulated.
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公开(公告)号：US12079557B2
公开(公告)日：2024-09-03
申请号：US17273713
申请日：2019-09-06
IPC分类号： G06F30/39 , H01L21/67 , H01L21/683 , H01L25/00 , H01L25/065 , G06F111/14 , G06F113/18
CPC分类号： G06F30/39 , H01L21/67144 , H01L21/6835 , H01L25/0657 , H01L25/50 , G06F2111/14 , G06F2113/18 , H01L2221/68327 , H01L2221/68363 , H01L2221/68381 , H01L2225/06544
摘要： Various embodiments of the present technology provide for the ultra-high density heterogenous integration, enabled by nano-precise pick-and-place assembly. For example, some embodiments provide for the integration of modular assembly techniques with the use of prefabricated blocks (PFBs). These PFBs can be created on one or more sources wafers. Then using pick-and-place technologies, the PFBs can be selectively arranged on a destination wafer thereby allowing Nanoscale-aligned 3D Stacked Integrated Circuit (N3-SI) and the Microscale Modular Assembled ASIC (M2A2) to be efficiently created. Some embodiments include systems and techniques for the construction of construct semiconductor devices which are arbitrarily larger than the standard photolithography field size of 26×33 mm, using pick-and-place assembly.
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3.发明公开公开(公告)号：US20240086604A1
公开(公告)日：2024-03-14
申请号：US17966449
申请日：2022-10-14
申请人： XEROX CORPORATION
IPC分类号： G06F30/3308
CPC分类号： G06F30/3308 , G06F2101/14 , G06F2111/14
摘要： System and method that allow to control density distributions of multiple particles (micro-or-nano-sized objects) to desired positions are described. A kernel density estimation (KDE) is used as a proxy for the initial particle density distribution and an optimal control problem is defined and solved using this approximation. A sequence of electrode electric potentials is computed so that the initial particle distribution is shaped into a target distribution after applying this sequence over time. The optimal control cost function is defined in terms of an L2 metric, with the L2 function that is used to compute the error between the particle density at the end of a time horizon and a target density. The KDE depends on the predicted trajectories of a set of particles, where the trajectory of a single particle is determined by a lumped, 2D, capacitive-based, nonlinear model describing the particle's motion.
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4.发明公开公开(公告)号：US20240005064A1
公开(公告)日：2024-01-04
申请号：US18255045
申请日：2021-11-01
发明人： Lihong Liu , Yayi Wei , Huwen Ding
CPC分类号： G06F30/23 , G03F7/70433 , G06F17/16 , G06F2111/14
摘要： Provided is a method for optimizing a lithography quality, including: determining a wave function stray term introduced by a surface roughness of a metal film layer based on Eigen matrix method and Bloch theorem; inputting the wave function stray term into a lithography quality deviation mathematical model for calculation and simulation to obtain an influence analysis curve of a roughness of the metal film layer on a lithography quality, the influence analysis curve characterizes an influence result of the roughness of the metal film layer on the lithography quality; reducing the surface roughness of the metal film layer and/or providing a metal-dielectric multilayer film structure between a mask above a metal-dielectric unit and air according to the influence result, so as to optimize the lithography quality of the metal-dielectric unit. Provided is an apparatus for optimizing a lithography quality, an electronic device, a computer-readable storage medium and computer program product.
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公开(公告)号：US20230419010A1
公开(公告)日：2023-12-28
申请号：US18081522
申请日：2022-12-14
IPC分类号： G06F30/39 , H01L21/67 , H01L21/683 , H01L25/065 , H01L25/00
CPC分类号： G06F30/39 , H01L21/67144 , G06F2111/14 , H01L25/0657 , H01L25/50 , H01L21/6835
摘要： Various embodiments of the present technology provide for the ultra-high density heterogenous integration, enabled by nano-precise pick-and-place assembly. For example, some embodiments provide for the integration of modular assembly techniques with the use of prefabricated blocks (PFBs). These PFBs can be created on one or more sources wafers. Then using pick-and-place technologies, the PFBs can be selectively arranged on a destination wafer thereby allowing Nanoscale-aligned 3D Stacked Integrated Circuit (N3-SI) and the Microscale Modular Assembled ASIC (M2A2) to be efficiently created. Some embodiments include systems and techniques for the construction of construct semiconductor devices which are arbitrarily larger than the standard photolithography field size of 26×33 mm, using pick-and-place assembly.
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