-
1.发明申请公开(公告)号：US20180204702A1
公开(公告)日：2018-07-19
申请号：US15921225
申请日：2018-03-14
Inventor： Franz A. M. Koeck , Robert J. Nemanich
IPC: H01J19/30 , C30B29/04 , C30B25/16 , C30B25/18 , C30B25/20 , H01J9/04 , H01J9/14 , H01J19/06 , H01J45/00
CPC classification number: H01J19/30 , C30B25/16 , C30B25/186 , C30B25/20 , C30B29/04 , H01J9/04 , H01J9/14 , H01J19/06 , H01J45/00
Abstract: An apparatus includes an emitter electrode including a phosphorus doped diamond layer with low work function. The apparatus further includes a collector electrode and a vacuum gap disposed between the emitter and the collector. The collector has a work function of 0.84 eV or less.
-
公开(公告)号：US09922791B2
公开(公告)日：2018-03-20
申请号：US15588362
申请日：2017-05-05
Inventor： Franz A. M. Koeck , Robert J. Nemanich
IPC: H01J45/00 , H01J19/30 , H01J9/04 , H01J9/14 , H01J19/06 , C30B25/18 , C30B25/20 , C30B25/16 , C30B29/04
CPC classification number: H01J19/30 , C30B25/16 , C30B25/186 , C30B25/20 , C30B29/04 , H01J9/04 , H01J9/14 , H01J19/06 , H01J45/00
Abstract: An apparatus includes an emitter electrode including a phosphorus doped diamond layer with low work function. The apparatus further includes a collector electrode and a vacuum gap disposed between the emitter and the collector. The collector has a work function of 0.84 eV or less.
-
3.发明申请Thermionic Electron Emitters/Collectors Have a Doped Diamond Layer with Variable Doping Concentrations 失效热电子发射器/收集器具有可掺杂浓度的掺杂金刚石层公开(公告)号：US20110221328A1
公开(公告)日：2011-09-15
申请号：US12029602
申请日：2008-02-12
Applicant: Robert J. Nemanich , Franz A. M. Koeck
Inventor： Robert J. Nemanich , Franz A. M. Koeck
CPC classification number: H01J1/14 , H01J1/38 , H01J9/04 , H01J9/14 , H01J19/06 , H01J19/30 , H01J45/00
Abstract: A thermionic electron emitter/collector includes a substrate and a doped diamond electron emitter/collector layer on the substrate. The doped diamond electron emitter/collector layer has at least a first and a second doping concentration as a function of depth such that the first doping concentration is different from the second doping concentration.
Abstract translation: 热电子发射器/集电极包括衬底和衬底上的掺杂金刚石电子发射极/集电极层。 掺杂金刚石电子发射体/集电极层至少具有作为深度的函数的第一和第二掺杂浓度，使得第一掺杂浓度不同于第二掺杂浓度。
-
Patent Agency Ranking
4.发明授权Vacuum electron device electrodes and components manufactured from highly oriented pyrolytic graphite (HOPG) 有权由高取向热解石墨（HOPG）制造的真空电子器件电极和部件公开(公告)号：US08610343B2
公开(公告)日：2013-12-17
申请号：US13492645
申请日：2012-06-08
Applicant: John Charles Cipolla
Inventor： John Charles Cipolla
CPC classification number: B23K1/19 , B23K2103/08 , B23K2103/12 , B23K2103/16 , B23K2103/172 , H01J19/06 , H01J23/02 , H01J25/50
Abstract: Components for use in vacuum electron devices are fabricated from highly oriented pyrolytic graphite (HOPG) and exhibit excellent thermal conductivity, low sputtering rates, and low ion erosion rates as compared to conventional components made from copper or molybdenum. HOPG can be reliably brazed by carefully controlling tolerances, calculating braze joint material volume, and applying appropriate compression during furnace operations. The resulting components exhibit superior thermal performance and enhanced resistance to ion erosion and pitting.
Abstract translation: 用于真空电子器件的组件由高取向热解石墨（HOPG）制成，并且与由铜或钼制成的常规元件相比，显示出优异的导热性，低溅射速率和低离子侵蚀速率。 HOPG可以通过仔细控制公差，计算钎焊接头材料体积以及在炉子操作期间施加适当的压缩来可靠地钎焊。 所得组分表现出优异的热性能和增强的抗离子侵蚀和点蚀性能。
-
公开(公告)号：US1553394A
公开(公告)日：1925-09-15
申请号：US43129020
申请日：1920-12-16
Applicant: WESTINGHOUSE ELECTRIC & MFG CO
Inventor： PILLING NORMAN B
CPC classification number: C22B4/00 , H01J19/06 , Y10T428/13 , Y10T428/2913 , Y10T428/2958
-
公开(公告)号：US20170323756A1
公开(公告)日：2017-11-09
申请号：US15588362
申请日：2017-05-05
Inventor： Franz A.M. Koeck , Robert J. Nemanich
IPC: H01J19/30 , H01J19/06 , H01J9/14 , H01J9/04 , C30B29/04 , C30B25/20 , C30B25/18 , H01J45/00 , C30B25/16
CPC classification number: H01J19/30 , C30B25/16 , C30B25/186 , C30B25/20 , C30B29/04 , H01J9/04 , H01J9/14 , H01J19/06 , H01J45/00
Abstract: An apparatus includes an emitter electrode including a phosphorus doped diamond layer with low work function. The apparatus further includes a collector electrode and a vacuum gap disposed between the emitter and the collector. The collector has a work function of 0.84 eV or less.
-
7.发明申请VACUUM ELECTRON DEVICE ELECTRODES AND COMPONENTS MANUFACTURED FROM HIGHLY ORIENTED PYROLYTIC GRAPHITE (HOPG) 有权真空电子装置电极和由高取向的热塑性石墨（HOPG）制造的组件公开(公告)号：US20120313505A1
公开(公告)日：2012-12-13
申请号：US13492645
申请日：2012-06-08
Applicant: John Charles CIPOLLA
Inventor： John Charles CIPOLLA
CPC classification number: B23K1/19 , B23K2103/08 , B23K2103/12 , B23K2103/16 , B23K2103/172 , H01J19/06 , H01J23/02 , H01J25/50
Abstract: Components for use in vacuum electron devices are fabricated from highly oriented pyrolytic graphite (HOPG) and exhibit excellent thermal conductivity, low sputtering rates, and low ion erosion rates as compared to conventional components made from copper or molybdenum. HOPG can be reliably brazed by carefully controlling tolerances, calculating braze joint material volume, and applying appropriate compression during furnace operations. The resulting components exhibit superior thermal performance and enhanced resistance to ion erosion and pitting.
Abstract translation: 用于真空电子器件的组件由高取向热解石墨（HOPG）制成，并且与由铜或钼制成的常规元件相比，显示出优异的导热性，低溅射速率和低离子侵蚀速率。 HOPG可以通过仔细控制公差，计算钎焊接头材料体积以及在炉子操作期间施加适当的压缩来可靠地钎焊。 所得组分表现出优异的热性能和增强的抗离子侵蚀和点蚀性能。
-
8.发明授权Thermionic electron emitters/collectors have a doped diamond layer with variable doping concentrations 失效热电子发射器/集电极具有可掺杂浓度的掺杂金刚石层公开(公告)号：US08188456B2
公开(公告)日：2012-05-29
申请号：US12029602
申请日：2008-02-12
Applicant: Robert J. Nemanich , Franz A. M. Koeck
Inventor： Robert J. Nemanich , Franz A. M. Koeck
IPC: H01L29/06
CPC classification number: H01J1/14 , H01J1/38 , H01J9/04 , H01J9/14 , H01J19/06 , H01J19/30 , H01J45/00
Abstract: A thermionic electron emitter/collector includes a substrate and a doped diamond electron emitter/collector layer on the substrate. The doped diamond electron emitter/collector layer has at least a first and a second doping concentration as a function of depth such that the first doping concentration is different from the second doping concentration.
Abstract translation: 热电子发射器/集电极包括衬底和衬底上的掺杂金刚石电子发射极/集电极层。 掺杂金刚石电子发射体/集电极层至少具有作为深度的函数的第一和第二掺杂浓度，使得第一掺杂浓度不同于第二掺杂浓度。
-
-
-
-
-
-
-
Search Results
8
records
(took 0.01 seconds)
