Solid-state thermionic refrigeration
    2.
    发明授权
    Solid-state thermionic refrigeration 有权
    固态热离子制冷

    公开(公告)号:US06779347B2

    公开(公告)日:2004-08-24

    申请号:US10145460

    申请日:2002-05-13

    IPC分类号: F25B2100

    摘要: Solid state thermioninc refrigerators with elements having at least one barrier segment connected to wire-equivalent segments. The barrier segment has solid state regions that establish a potential energy barrier to electric carriers. This barrier is such that the circulation of a negative electrical charge from one of such regions to another region experiences an increasing potential energy. Elements can be superconducting or nonsuperconducting. Elements can also include an inverse barrier.

    摘要翻译: 具有元件的固态热电偶制冷器具有至少一个阻挡段连接到电线等效段。 阻挡段具有固态区域,为电载体建立势垒。 这种障碍使得负电荷从这些区域之一循环到另一区域经历增加的势能。 元素可以是超导或非超导。 元素还可以包括反向屏障。

    Solid-state thermionic refrigeration
    3.
    发明申请
    Solid-state thermionic refrigeration 有权
    固态热离子制冷

    公开(公告)号:US20030033818A1

    公开(公告)日:2003-02-20

    申请号:US10145460

    申请日:2002-05-13

    摘要: Solid state thermioninc refrigerators with elements having at least one barrier segment connected to wire-equivalent segments. The barrier segment has solid state regions that establish a potential energy barrier to electric carriers. This barrier is such that the circulation of a negative electrical charge from one of such regions to another region experiences an increasing potential energy. Elements can be superconducting or nonsuperconducting. Elements can also include an inverse barrier.

    摘要翻译: 具有元件的固态热电偶制冷器具有至少一个阻挡段连接到电线等效段。 阻挡段具有固态区域,为电载体建立势垒。 这种障碍使得负电荷从这些区域之一循环到另一区域经历增加的势能。 元素可以是超导或非超导。 元素还可以包括反向屏障。

    Thin film Hg-based superconductors, thermoelectric materials and methods of fabrication thereof
    4.
    发明申请
    Thin film Hg-based superconductors, thermoelectric materials and methods of fabrication thereof 审中-公开
    薄膜Hg基超导体,热电材料及其制造方法

    公开(公告)号:US20030022795A1

    公开(公告)日:2003-01-30

    申请号:US10022011

    申请日:2002-06-06

    IPC分类号: H01B001/00

    摘要: Improved Hg-containing superconducting films and thermoelectric materials are provided. The films are fabricated by annealing starting T1-containing films (e.g., T1-1212 or T1-2212) in an Hg-vapor environment so as to cause a substitution of T1 by Hg without substantial alteration of the crystalline structure of the starting films. Preferably, a body comprising a substrate having an epitaxial T1-containing film thereon is annealed under vacuum conditions with a Hg-based bulk; typical annealing conditions are 600-900null C. for a period of from about 1-20 hours. The final Hg-containing film products have a Jc of at least about 106 A/cm2 (100 K, OT) and a Xmin of up to about 50%. The thermoelectric materials are prepared by perturbing a crystalline precursor having a structure similar to the final material so as to cause a first molecule to be released from the precursor. A vapor is introduced into the reaction system simultaneous to or shortly after the perturbation step so as to cause molecules which are within the vapor and are different than the first molecules to replace the first molecules in the precursor.

    摘要翻译: 提供了改进的含Hg超导膜和热电材料。 通过在Hg-蒸气环境中退火起始含T1的膜(例如,T1-1212或T1-2212)来制造膜,以便引起T 1被Hg取代,而基本上不改变起始膜的晶体结构。 优选地,包括其上具有外延含Ti膜的基体的主体在真空条件下以Hg-基体积退火; 典型的退火条件为600-900℃,时间为约1-20小时。 最终的含汞膜产品的Jc为至少约106A / cm2(100K,OT),Xmin高达约50%。 通过扰乱具有与最终材料相似的结构的结晶前体来制备热电材料,以使第一分子从前体释放。 在扰动步骤之后或不久之后,将蒸汽引入反应体系中,以使得在蒸气中并且不同于第一分子的分子代替前体中的第一分子。

    Thermoelectric compositions
    5.
    发明授权
    Thermoelectric compositions 失效
    热电组合物

    公开(公告)号:US06459031B1

    公开(公告)日:2002-10-01

    申请号:US09500659

    申请日:2000-02-08

    IPC分类号: H01L3512

    CPC分类号: H01L35/225

    摘要: A composition is disclosed having the formula: (RBa2Cu3O7−&dgr;)x+(PrBa2Cu3O7−&dgr;)1−x wherein: R comprises Y, Ce, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and/or Lu; 0

    摘要翻译: 公开了具有下式的组成:(RBa2Cu3O7-δ)x +(PrBa2Cu3O7-δ)1-x其中:R包括Y,Ce,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er, Yb,和/或Lu; 0

    Thin film Hg-based superconductors, thermoelectric materials and methods of fabrication thereof
    6.
    发明授权
    Thin film Hg-based superconductors, thermoelectric materials and methods of fabrication thereof 失效
    薄膜Hg基超导体,热电材料及其制造方法

    公开(公告)号:US06395685B1

    公开(公告)日:2002-05-28

    申请号:US09843964

    申请日:2001-04-27

    IPC分类号: C04B35622

    摘要: Improved Hg-containing superconducting films and thermoelectric materials are provided. The films are fabricated by annealing starting Tl-containing films (e.g., Tl-1212 or Tl-2212) in an Hg-vapor environment so as to cause a substitution of Tl by Hg without substantial alteration of the crystalline structure of the starting films. Preferably, a body comprising a substrate having an epitaxial Tl-containing film thereon is annealed under vacuum conditions with a Hg-based bulk; typical annealing conditions are 600-900° C. for a period of from about 1-20 hours. The final Hg-containing film products have a Jc of at least about 106 A/cm2 (100 K, OT) and a Xmin of up to about 50%. The thermoelectric materials are prepared by perturbing a crystalline precursor having a structure similar to the final material so as to cause a first molecule to be released from the precursor. A vapor is introduced into the reaction system simultaneous to or shortly after the perturbation step so as to cause molecules which are within the vapor and are different than the first molecules to replace the first molecules in the precursor.

    摘要翻译: 提供了改进的含Hg超导膜和热电材料。 通过在Hg-蒸气环境中退火起始含T1的膜(例如,T1-1212或T1-1222)来制造膜,以便通过Hg代替Tl,而基本上不改变起始膜的结晶结构。 优选地,包括其上具有含外延层的膜的基体的主体在真空条件下与Hg基体积退火; 典型的退火条件为600-900℃,时间为约1-20小时。 最终的含汞膜产品的Jc为至少约106A / cm2(100K,OT),Xmin高达约50%。 通过扰乱具有与最终材料相似的结构的结晶前体来制备热电材料,以使第一分子从前体释放。 在扰动步骤之后或不久之后,将蒸汽引入反应体系中,以使得在蒸气中并且不同于第一分子的分子代替前体中的第一分子。

    Superconducting thermoelectric generator
    7.
    发明授权
    Superconducting thermoelectric generator 失效
    超导热电发电机

    公开(公告)号:US5747418A

    公开(公告)日:1998-05-05

    申请号:US732945

    申请日:1996-10-17

    摘要: An apparatus and method for producing electricity from heat. The present invention is a thermoelectric generator that uses materials with substantially no electrical resistance, often called superconductors, to efficiently convert heat into electrical energy without resistive losses. Preferably, an array of superconducting elements is encased within a second material with a high thermal conductivity. The second material is preferably a semiconductor. Alternatively, the superconducting material can be doped on a base semiconducting material, or the superconducting material and the semiconducting material can exist as alternating, interleaved layers of waferlike materials. A temperature gradient imposed across the boundary of the two materials establishes an electrical potential related to the magnitude of the temperature gradient. The superconducting material carries the resulting electrical current at zero resistivity, thereby eliminating resistive losses. The elimination of resistive losses significantly increases the conversion efficiency of the thermoelectric device.

    摘要翻译: 一种用于从热发电的装置和方法。 本发明是一种热电发电机,其使用基本上没有电阻的材料,通常称为超导体,以有效地将热量转换成电能而没有电阻损耗。 优选地,超导元件的阵列被封装在具有高导热性的第二材料内。 第二材料优选为半导体。 或者,超导材料可以掺杂在基底半导体材料上,或者超导材料和半导体材料可以作为晶片状材料的交替交替层存在。 施加在两种材料的边界上的温度梯度建立了与温度梯度的幅度相关的电位。 超导材料承载所得的电阻为零电阻,从而消除电阻损耗。 消除电阻损耗显着提高了热电装置的转换效率。

    Peltier cooling stage utilizing a superconductor-semiconductor junction
    8.
    发明授权
    Peltier cooling stage utilizing a superconductor-semiconductor junction 失效
    珀尔帖冷却级利用超导体 - 半导体结

    公开(公告)号:US5006505A

    公开(公告)日:1991-04-09

    申请号:US229883

    申请日:1988-08-08

    摘要: A practical cryogenic Peltier cooler is devised by replacing one of the semiconducting elements in a conventional peltier cooler with an element comprised of bulk, or thin film superconducting material. In the preferred embodiment, a rare-earth, a barium copper oxide superconductor of the form Yb.sub.a Cu.sub.3 O.sub.x is utilized. The superconducing elements are placed in an alternating series with semiconducting elements comprised of bismuth telluride of the form Bi.sub.2 Te.sub.3 (n-type). Performance may be improved in an alternative embodiment by utilizing instead a bismuth antimony semiconductor of the form Bi.sub.85 Sb.sub.15 (n-type). As a result, cryogenic Peltier coolers can be devised with useful refrigeration capacities and stable cold temperatures of 65-80 degrees Kelvin and below, while heat sinked to a higher temperature.

    摘要翻译: 通过用常规的珀尔帖冷却器中的一个半导体元件替换由本体或薄膜超导材料构成的元件来设计实用的低温珀耳帖冷却器。 在优选实施例中,使用YbaCu3Ox形式的稀土,钡氧化铜钡超导体。 超导元件与由Bi2Te3(n型)形式的碲化铋构成的半导体元件交替地放置。 在替代实施例中,可以通过利用Bi85Sb15(n型)形式的铋锑半导体来改善性能。 因此,可以设计低温珀耳贴冷却器,具有有用的制冷能力和65-80开氏度以下的稳定的冷温,同时散热到更高的温度。

    FLEXIBLE THERMOELECTRIC GENERATOR AND METHODS OF MANUFACTURING

    公开(公告)号:US20170317261A1

    公开(公告)日:2017-11-02

    申请号:US15584350

    申请日:2017-05-02

    IPC分类号: H01L35/32 H01L35/30 H01L35/22

    摘要: Flexible thermoelectric generators and methods of manufacturing are disclosed. In one embodiment, a flexible thermoelectric generator includes a plurality of pillars, a first and a second plurality of flexible interconnects, and a flexible material. The plurality of pillars having a first side and a second side. The first plurality of flexible interconnects electrically connecting pairs of the plurality of pillars on the first side. The second plurality of flexible interconnects electrically connecting the pairs of plurality of pillars on the second side. The first and the second plurality of flexible interconnects alternate among the pairs of plurality of pillars to form an electrical circuit having a first end and a second end. The flexible material covering the first and second plurality of flexible interconnects and having an external surface. The flexible material is configured to conduct thermal energy from the external surface to the plurality of pillars.