摘要:
A thermoelectric radiation detector having a substrate (1) and a film (2) of solid state material having thermal anisotropy and containing YBa.sub.2 Cu.sub.3 O.sub.7, formed on the surface of the substrate, and wherein said film has CuO.sub.2 planes (3) inclined with respect to the substrate plane, the improvement wherein at least a portion of the Y is replaced by another rare earth metal and/or at least a portion of the Ba and/or of the Cu is replaced by at least one other heavy metal at least in partial areas of the film and in a sufficient amount to increase the thermal anisotropy of the detector.
摘要:
Solid state thermioninc refrigerators with elements having at least one barrier segment connected to wire-equivalent segments. The barrier segment has solid state regions that establish a potential energy barrier to electric carriers. This barrier is such that the circulation of a negative electrical charge from one of such regions to another region experiences an increasing potential energy. Elements can be superconducting or nonsuperconducting. Elements can also include an inverse barrier.
摘要:
Solid state thermioninc refrigerators with elements having at least one barrier segment connected to wire-equivalent segments. The barrier segment has solid state regions that establish a potential energy barrier to electric carriers. This barrier is such that the circulation of a negative electrical charge from one of such regions to another region experiences an increasing potential energy. Elements can be superconducting or nonsuperconducting. Elements can also include an inverse barrier.
摘要:
Improved Hg-containing superconducting films and thermoelectric materials are provided. The films are fabricated by annealing starting T1-containing films (e.g., T1-1212 or T1-2212) in an Hg-vapor environment so as to cause a substitution of T1 by Hg without substantial alteration of the crystalline structure of the starting films. Preferably, a body comprising a substrate having an epitaxial T1-containing film thereon is annealed under vacuum conditions with a Hg-based bulk; typical annealing conditions are 600-900null C. for a period of from about 1-20 hours. The final Hg-containing film products have a Jc of at least about 106 A/cm2 (100 K, OT) and a Xmin of up to about 50%. The thermoelectric materials are prepared by perturbing a crystalline precursor having a structure similar to the final material so as to cause a first molecule to be released from the precursor. A vapor is introduced into the reaction system simultaneous to or shortly after the perturbation step so as to cause molecules which are within the vapor and are different than the first molecules to replace the first molecules in the precursor.
摘要:
A composition is disclosed having the formula: (RBa2Cu3O7−&dgr;)x+(PrBa2Cu3O7−&dgr;)1−x wherein: R comprises Y, Ce, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and/or Lu; 0
摘要:
Improved Hg-containing superconducting films and thermoelectric materials are provided. The films are fabricated by annealing starting Tl-containing films (e.g., Tl-1212 or Tl-2212) in an Hg-vapor environment so as to cause a substitution of Tl by Hg without substantial alteration of the crystalline structure of the starting films. Preferably, a body comprising a substrate having an epitaxial Tl-containing film thereon is annealed under vacuum conditions with a Hg-based bulk; typical annealing conditions are 600-900° C. for a period of from about 1-20 hours. The final Hg-containing film products have a Jc of at least about 106 A/cm2 (100 K, OT) and a Xmin of up to about 50%. The thermoelectric materials are prepared by perturbing a crystalline precursor having a structure similar to the final material so as to cause a first molecule to be released from the precursor. A vapor is introduced into the reaction system simultaneous to or shortly after the perturbation step so as to cause molecules which are within the vapor and are different than the first molecules to replace the first molecules in the precursor.
摘要:
An apparatus and method for producing electricity from heat. The present invention is a thermoelectric generator that uses materials with substantially no electrical resistance, often called superconductors, to efficiently convert heat into electrical energy without resistive losses. Preferably, an array of superconducting elements is encased within a second material with a high thermal conductivity. The second material is preferably a semiconductor. Alternatively, the superconducting material can be doped on a base semiconducting material, or the superconducting material and the semiconducting material can exist as alternating, interleaved layers of waferlike materials. A temperature gradient imposed across the boundary of the two materials establishes an electrical potential related to the magnitude of the temperature gradient. The superconducting material carries the resulting electrical current at zero resistivity, thereby eliminating resistive losses. The elimination of resistive losses significantly increases the conversion efficiency of the thermoelectric device.
摘要:
A practical cryogenic Peltier cooler is devised by replacing one of the semiconducting elements in a conventional peltier cooler with an element comprised of bulk, or thin film superconducting material. In the preferred embodiment, a rare-earth, a barium copper oxide superconductor of the form Yb.sub.a Cu.sub.3 O.sub.x is utilized. The superconducing elements are placed in an alternating series with semiconducting elements comprised of bismuth telluride of the form Bi.sub.2 Te.sub.3 (n-type). Performance may be improved in an alternative embodiment by utilizing instead a bismuth antimony semiconductor of the form Bi.sub.85 Sb.sub.15 (n-type). As a result, cryogenic Peltier coolers can be devised with useful refrigeration capacities and stable cold temperatures of 65-80 degrees Kelvin and below, while heat sinked to a higher temperature.
摘要:
A superconductor junction includes a normal metal layer having a first side and a second side, an insulating layer overlying the second side of the normal metal layer, and a first superconductor layer formed of a first superconductor material that overlies a side of the insulating layer opposite the side that overlies the normal metal layer. The superconductor junction further includes a second superconductor layer formed of a second superconductor material with a first side overlying a side of the first superconductor material opposite the side that overlies the insulating layer. The second superconductor material has a higher diffusion coefficent than the first superconductor material and/or the second superconductor material has a lower recombination coefficent than the first superconductor metal layer. A normal metal layer quasiparticle trap is coupled to a second side of the second superconductor layer.
摘要:
Flexible thermoelectric generators and methods of manufacturing are disclosed. In one embodiment, a flexible thermoelectric generator includes a plurality of pillars, a first and a second plurality of flexible interconnects, and a flexible material. The plurality of pillars having a first side and a second side. The first plurality of flexible interconnects electrically connecting pairs of the plurality of pillars on the first side. The second plurality of flexible interconnects electrically connecting the pairs of plurality of pillars on the second side. The first and the second plurality of flexible interconnects alternate among the pairs of plurality of pillars to form an electrical circuit having a first end and a second end. The flexible material covering the first and second plurality of flexible interconnects and having an external surface. The flexible material is configured to conduct thermal energy from the external surface to the plurality of pillars.